Lowering threshold currents for m-plane III-nitride VCSELs

29 July 2015

University of California Santa Barbara (UCSB) in the USA has reduced the threshold current density of its non-polar m-plane III-nitride vertical-cavity surface-emitting lasers (VCSELs) by a factor of five [J. T. Leonard et al, Appl. Phys. Lett., vol107, p011102, 2015].

 

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