Lowering threshold currents for m-plane III-nitride VCSELs
July 30, 2015
29 July 2015
University of California Santa Barbara (UCSB) in the USA has reduced the threshold current density of its non-polar m-plane III-nitride vertical-cavity surface-emitting lasers (VCSELs) by a factor of five [J. T. Leonard et al, Appl. Phys. Lett., vol107, p011102, 2015].