N-polar gallium nitride gives record power density and efficiency at 94GHz

3 February 2017

Semiconductor Today

University of California Santa Barbara (UCSB) in the USA claims record power density (6.7mW/mm) and power-added efficiency (16.9% PAE) at the 'W-band' frequency of 94GHz for metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) based on N-polar gallium nitride (GaN) [Steven Wienecke et al, IEEE Electron Device Letters, published online 16 January 2017].

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