Events and Seminars for 2014
Future Development of GaN Vertical Power Device and Introduction of Our Company, Fuji Electric
Basic Ammonothermal Growth of Bulk GaN Crystals
Impurities and intrinsic defects play important role in the optical and
electric properties of any semiconductor, and in special, the nitrides.
Recent progress in high power blue laser diodes on semipolar 20-2-1 GaN
High Performance Self-aligned AlN/GaN MISHEMT with In-situ SiNx
Semipolar AlGaN UV LEDs on Relaxed Buffer Layers
Nonpolar VCSELs: Intra-cavity contacts, Aperture Designs, and Active Region Quality
Spontaneous polarization constants in III-nitrides and the importance of a consistent reference structure
Sang Ho Oh, ECE GSR
White Lighting Based on Semipolar Blue InGaN/GaN Light-Emitting Diodes
Professor Qikun Xue, Department of Physics, Tsinghua University
"From quantized anomalous Hall effect to interface enhanced high temperature superconductivity"
Daniel Steiauf, Postdoc, Materials
First Principles Calculations for Auger Recombination Rates in Semiconductor Materials
"Current Aperture III-N Lasers for High Efficiency Lighting"
Jeff Tsao, Distinguished Member of Technical Staff, Chief Scientist, EFRC for Solid-State-Lightning Science, Sandia National Laboratories
"Solid-State Lightning: Toward Smart & Ultra-Efficient Materials, Devices, Lamps & Systems"
Professor Debdeep Jena, University of Notre Dame
"New results on III-Nitride physics and devices using MBE heterostructures"
Dr. Toufik Sadi and Pyry Kivisaari from Aalto University, Helsinki, Finland
"Emission enhancement and plasmonic losses in InGaN quantum wells coupled to metallic gratings"
"Monte Carlo-drift-diffusion simulation of