Events and Seminars for 2017
The material properties of GaN are well suited for fabricating transistors used in mm-wave (30-300 GHz) power amplification. While most efforts have historically focused on HEMTs grown in the Ga-polar orientation, our work uses the N-polar orientation.
“Eureka! (Now what?): Patents and other Intellectual Property Rights”
Abstract: According to the US Department of Energy, solid-state lighting (SSL) technology could
reduce by 75% the US lighting energy consumption by the end of 2035. The last ten years have
Talk title: Unintentional Ga incorporation in AlN films grown by MOCVD
We have special visitors giving technical talks, hosted by Dr. Stacia Keller.
Prof. Axel Hoffmann
Title: Calcium impurity as a source of non-radiative recombination in (In,Ga)N grown by MBE