Events and Seminars for 2018
Site specific focused ion beam preparation and atom probe tomography investigation of semiconductor n
Na flux grown bulk GaN crystals at UCSB with a focus on impurities and their effect on the crystal transparency
The material properties of III-Nitrides make this platform an excellent choice for power switching applications.
Understanding efficiency loss mechanisms and electron transport in InGaN/GaN LEDs by electron emission spectroscopy
In this presentation, I will first talk about development of MOCVD-grown TJ contacts on LED test structures. Effects of doping concentration and surface treatments will be discussed based on electrical characteristics and secondary ion mass spectrometry (SIMS) data.
Solid-state lighting (SSL) utilizes a semiconductor-based emitter instead of plasma or a filament and is more energy efficient than traditional sources.
You are cordially invited to a lecture and reception honoring the recipient of the Fred and Linda R.
Deep UV LEDs in the range of 260-280 nm are needed to develop new disinfection and biotechnology applications. UV LEDs are expected to replace Mercury-vapor lamps.
UCSB Materials Department and Materials Research Laboratory Seminar
Morgan Pattison, Ph.D. (UCSB 2006)
Founder, SSLS, Inc.
Consulting Senior Technical Advisor, US DOE SSL Program
Anchal Agarwal, Graduate Student Researcher, Mishra Group
Electrical & Computer Engineering Department
In the first part of this talk, we report our progress towards improved light extraction engineering in freestanding semipolar LEDs using Langmuir-Blodgett lithography to create micro-roughened scattering interfaces.