Nitrides Seminar - Charles Forman

1/25/2018 12PM ESB 1001

In this talk, I will present the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had ion implanted apertures for current confinement, III-nitride tunnel junction (TJ) intracavity contacts grown by molecular-beam epitaxy (MBE), and a dual-dielectric distributed Bragg reflector (DBR) design.

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