High Flux Plasma-Assisted Molecular Beam Epitaxy (PAMBE) for InGaN Alloys
Nitride plasma-assisted molecular beam epitaxy (PAMBE) is a unique growth technique among not just nitrides but also traditional III-V semiconductors in general. Historically, growth of smooth GaN and InGaN films has been limited to group III-rich and lower temperature regimes due to the relatively low active nitrogen fluxes supplied by traditional RF plasma units. However, modern advances in RF plasma technology have enabled active nitrogen fluxes and growth rates over an order of magnitude higher than previously possible. This enables smooth surface morphologies in the higher temperature and group V-rich regimes that were previously inaccessible. Additionally, these higher active nitrogen fluxes can facilitate higher In incorporation in InGaN films at temperatures higher than traditionally possible. This work aims to determine how much In can be incorporated into InGaN films at 700°C, a temperature close to optimal GaN growth temperature in PAMBE.