The material properties of III-Nitrides make this platform an excellent choice for power switching applications. Numerous reports of GaN power switching devices operating at high voltages have been published in recent years. III-Nitride devices are typically fabricated using the Ga-polar (0001) orientation. Due to their inverted polarity, N-polar (000-1) HEMTs possess a number of advantages over their Ga-face counterparts. Exploiting these advantages, researchers have reported record performances with N-polar GaN HEMTs in the mm-wave regime.