Nitrides Seminar - Philip Chan, Graduate Student Researcher, ECE

Nitrides Seminar

Thursday, October 28, 2021, 12:00PM

Attend in person at ESB 1001!

Zoom option also available
https://ucsb.zoom.us/j/81668261284?pwd=Y1o2bnJUL0R3d1crVTN5S1RjdktrZz09

Meeting ID: 816 6826 1284                        Passcode: 672573

Philip Chan
Graduate Student Researcher, Nakamura Group

University of California, Santa Barbara

Red InGaN-based LEDs with high active region growth temperature

Long wavelength InGaN micro-LEDs are challenging to grow but critical for next generation displays. The low growth temperatures required to produce high indium composition films and large lattice mismatch between the active region and template degrade crystal quality and reduce radiative efficiency. Highly relaxed InGaN buffer layers were grown by MOCVD across 2-inch c-plane sapphire substrates. The buffer layers were relaxed by the in-situ thermal decomposition of an InGaN underlayer during growth. A 75 nm redshift was demonstrated by room temperature photoluminescence of quantum wells regrown on a buffer relaxed by this technique. Full LEDs grown on these buffers with an active region growth temperature of 870 °C have achieved red emission longer than 630 nm and voltage under 2.6 V at 25 Acm^-2.