Special Nitrides Seminar - Farsane Tabataba-Vakili
4/30/2019 10AM MRL 2053
III-Nitride Microdisk Photonic Circuits on Silicon: Lasing, Critical Coupling, and Electrical Injection
Bio: Farsane Tabataba-Vakili got her B.Sc. and M.Sc. degrees in physics at TU Berlin in 2013 and 2016, respectively. Her B.Sc. thesis was on the morphological characterization of MOCVD grown GaN/AlN QDs. During her M.Sc. degree she did a 17-month internship at PARC, a Xerox Company in California where she worked on InGaN UVA laser diodes and on e-beam pumped AlGaN UVC emitters, writing her master's thesis on the latter topic. Since 2016 Farsane is a Ph.D. student at C2N-CNRS near Paris and CEA-INAC in Grenoble working on III-nitride microcavities under optical pumping and electrical injection for a nanophotonic platform on silicon.
Farsane Tabataba-Vakili1,2, Laetitia Doyennette3, Christelle Brimont3, Thierry Guillet3, Stéphanie Rennesson4, Eric Frayssinet4, Julien Brault4, Benjamin Damilano4, Jean-Yves Duboz4, Fabrice Semond4, Iannis Roland1, Moustafa El Kurdi1, Xavier Checoury1, Sebastien Sauvage1, Bruno Gayral2, Philippe Boucaud4
1Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, F-91120 Palaiseau, France
2Univ. Grenoble Alpes, CEA, INAC-Pheliqs, 38000 Grenoble, France
3Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France
4Université Côte d’Azur, CRHEA-CNRS, F-06560 Valbonne, France
Abstract: Active and passive photonic circuits in the blue-UV spectral range have important potential applications in quantum technologies and lab-on-chip bio-sensing. III-nitride opto-electronic microcavities can be monolithically integrated on a silicon platform by epitaxial growth. We are investigating III-nitride microdisks under electrical injection and microdisk photonic circuits under optical pumping. We have demonstrated the first blue microlaser integrated into a photonic circuit using small microdisks and evanescently coupled bus waveguides with gaps in the 40 to 120 nm range, showing lasing for a wide range of device parameters. We have also demonstrated critical coupling in such active photonic circuits in the spontaneous emission regime, achieving the shortest wavelength and smallest gap size reported for critical coupling. Finally, we have investigated an electrical injection scheme compatible with III-nitride nanophotonics using a microbridge p-contact and an n-contact that bypasses the insulating buffer layers.