Compound Semiconductor Seminar - Oguz Odabasi
Compound Semiconductors: Electronics,
Thursday, October 16, 2025, 12:00PM
Attend in person at the Engineering Sciences Building 1001
Oguz Odabasi, GSR, Ahmadi Group
Recent Developments in N-polar GaN HEMTs
on MBE Grown Epistructures
N-polar GaN HEMTs demonstrate excellent performance for high-frequency power amplification. Recent studies have shown the promise of MBE-grown epitaxy for achieving improved electron mobility and robust N-polar GaN growth. By integrating high-k gate dielectrics and low-damage GaN etching processes, these devices have achieved record enhancement-mode performance, combining high-frequency operation with enhanced reliability and robustness.
This talk will discuss the key process innovations and material developments that enabled these advances, along with final device benchmarks and comparisons to state-of-the-art technologies.
BIO: Oguz Odabasi is currently pursuing a Ph.D. in Electrical and Computer Engineering at UCLA, where his research focuses on the fabrication and characterization of N-polar high-electron-mobility transistors (HEMTs). He joined the Ahmadi Group in Fall 2021.