Publications | Solid State Lighting & Energy Electronics Center

No.	Year	Title and Authors	Publisher	Category
1	1986	"Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee	J. Crystal Growth, 77, 186	Refereed Conference Proceedings
2	1987	"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus	Technical Program of the Electronic Materials Conference, paper N7, 50	Refereed Conference Proceedings
3	1987	"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus	Appl. Phys. Lett. 51, 1530	Journal
4	1987	"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus	Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA	Refereed Conference Proceedings
5	1987	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa	Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December	Refereed Conference Proceedings
6	1987	"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus	Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September	Conference Proceedings
7	1988	"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko	Crystal Growth, 93, 195	Journal
8	1988	"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko	Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89	Refereed Conference Proceedings
9	1989	"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas	J. Electrochem. Soc., 136, No. 7, 2067	Journal
10	1989	"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars	Appl. Phys. Lett., 54, 635	Journal
11	1989	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa	Prog. Crystal Growth and Charact., 19, 137	Journal
12	1989	"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus	J. Crystal Growth, 98, 195	Journal
13	1990	"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,	Acta Polytechnica Scandivica, Ch. 195, 39	Journal
14	1991	"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars	J. Crystal Growth, 107, 73	Journal
15	1992	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren	Electronic Lett. 28, No.20, 1873	Journal
16	1992	"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39	Conference Proceedings
17	1992	"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54	Conference Proceedings
18	1992	"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus	Proceedings of the Integrated Photonics Research Conference, New Orleans, LA, WF-1, pp. 54-55	Conference Proceedings
19	1992	"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	P7, IEDM Tech. Digest, 311	Journal
20	1992	"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,	Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )	Book Chapter
21	1993	"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	IEEE Electron. Device Lett. 14, No. 2., 60	Journal
22	1993	"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Proceedings ofUltrafast electronics and Optoelectronics Conference	Conference Proceedings
23	1993	"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers	Electronics Letters, 29, No. 4, pp.340-341	Journal
24	1993	"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 375-378, IEEE Society, Piscataway, New Jersey	Conference Proceedings
25	1993	"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 239-242, IEEE Society, Piscataway, New Jersey	Conference Proceedings
26	1993	"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars	Mat. Research Soc. Proceedings, San Francisco, April	Refereed Conference Proceedings
27	1993	"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Electronics Lett. 29, No. 4, pp.372-374	Journal
28	1993	"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", S.P. DenBaars, A.L.Holmes, JR., M. E. Heimbuch, and C. M. Reaves	Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June	Conference Proceedings
29	1993	"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars	Appl. Physics Lettters, V63, N25:3417-3419, December	Journal
30	1993	"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars	, V63, N23:3203-3205, December	Journal
33	1993	"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars	Electronics Letters, V29, N4: 340-342	Journal
34	1993	"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	Electronics Letters, V29, N4: 372-373	Journal
35	1993	"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, V14, N2: 60-62	Journal
36	1993	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren	Electronics Letters, V28, N20: 1873-1874	Journal
37	1993	"Photoluminescence Studies of a Quantum Well Modulated by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars	Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)	Conference Proceedings
38	1994	"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren	Journal of Electronic Materials, V23, N2:87-91, February	Journal
39	1994	"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	Journal of Electronic Materials, V23, N2:233-237, February	Journal
40	1994	"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma	Journal of Crystal Growth, V145, N1-4: 721-727	Journal
41	1994	"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra	Applied Surface Science, V82-3, 126-131	Journal
42	1994	"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars	Journal of Vacuum Science and Technology B, V12, N6: 3704-3707	Journal
43	1994	"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars	Superlattices and Microstructures, V15, N1: 15-21	Journal
44	1994	"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V65, N17: 2159-2161	Journal
45	1994	"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars	Electronics Letters, V30, N18: 1492-1494.	Journal
46	1994	"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli	Electronics Letters, V30, N12:954-956	Journal
47	1994	"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars	Applied Physics Letters, V64, N20: 2658-2660	Journal
48	1994	"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars	IEEE Proceedings of the 6th Intl. InP and Related Materials Conf	Conference Proceedings
49	1994	"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch	SPIE Proceedings of the Optoelectronics/Laser Conf.	Conference Proceedings
50	1994	"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi	Proceedings of the Conf on Laser and Electro-Optics	Conference Proceedings
51	1994	"GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars	Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152	Conference Proceedings
52	1995	"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars	Surface Science, V326, N3: 209-217	Journal
53	1995	"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman	Journal of the Korean Physical Society, V28, S: S37-S42.	Journal
54	1995	"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars	Electronics Letters, V31, N7: 588-589	Journal
55	1995	"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars	Electronic Letters, V31, N13: 1102-1103	Journal
56	1995	"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra	Solid State Electronics, V38, N4: 905-908	Journal
57	1995	"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck	Applied Physics Letters, v67, N11: 1541-1543	Journal
58	1995	"InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars	Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.	Conference Proceedings
59	1995	"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38	Journal
60	1993	“Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room –Temperature Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars	Phys. Rev. Letters.	Journal
61	1994	“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars	Materials Res. Soc., 1994, 147-152	Conference Proceedings
62	1995	"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars	Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.	Journal
63	1996	"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck	Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645	Journal

64	1995	"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars	Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.	Conference Proceedings
65	1995	"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars	Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609	Journal
66	1995	"Characterization of InP Islands on InGaP/GaAs(001): Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	Surface Science, Nov 1, 1995, V341 N1-2: 29-39	Journal
67	1996	"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars	Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527	Journal
68	1996	"Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.	Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.	Journal
69	1996	"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.	Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.	Journal
70	1995	“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.	Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.	Journal
71	1995	“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.	Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.	Journal
72	1995	“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.	Journal
73	1995	“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.	JOM, Dec. 1995, V47, N12: pp. 25-32.	Journal
74	1996	“Field emission from selectively regrown GaN pyramids,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp.152-153.	Conference Proceedings
75	1996	“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp. 60-61.	Conference Proceedings
76	1996	“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.	IEEE, 1996, pages 107-110.	Conference Proceedings
77	1996	“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	IEEE, 1996, pp. 157-158 Volume 2.	Conference Proceedings
78	1996	“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.	Materials Res. Soc, 1996, pp. 165-170.	Conference Proceedings
79	1996	“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.	Materials Research. Society, 1996, pp. 63-74.	Conference Proceedings
80	1996	“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.	Opt. Soc. America, 1996, p. 472.
81	1996	“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.	Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.	Journal
82	1996	“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 14 March 1996, V32, N6: pp. 593-594.	Journal
83	1996	“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.	Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.	Journal
84 (a)	1996	“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.	Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.	Journal
84 (b)	1996	“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149	Journal
85	1996	“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.	Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.	Journal
86	1996	“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.	Journal
87	1996	“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.	Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.	Journal
88	1996	“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.	Journal
89	1996	“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.	Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.	Journal
90	1996	“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.	Journal
91	1996	“Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.	Journal
92	1996	“Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.	Journal
93	1996	“Radiative recombination lifetime measurements of InGaN single quantum well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.	Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.	Journal
94	1996	“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.	Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.	Journal
95	1996	“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.	Journal
96	1996	“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.	Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.	Journal
97	1996	“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.	Journal
98	1996	“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651	Journal
99	1996	“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.	Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.	Journal
100	1996	“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.	Materials Res. Soc, 1996. pp. 133-138.	Conference Proceedings
101	1997	“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.	Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.	Journal
102	1997	“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.	Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp. 340-343.	Journal
103	1997	“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.	Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.	Journal
104	1997	“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.	Journal
105	1997	“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.	Journal
106	1997	“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.	Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.	Journal
107	1997	“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.	Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.	Journal
108	1997	“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.	Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.	Journal
109	1997	“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.	Solid State Communications, April 1997, V102, N4: pp. 297-300.	Journal
110	1997	“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.	Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.	Journal
111	1997	“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P.	Applied Physics Letters, 12 May 1997, V70, N19: pp. 2580-2582.	Journal
112	1997	”Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” Wu, Y.-F.; Keller, S.; Kozodoy, P.; Keller, B.P.; Keller, and DenBaars, S.P.	IEEE Electron Device Letters, June 1997, V18, N6: pp. 290-292.	Conference Proceedings
113	1997	“Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions,” Yu-Heng Jan; Fish, G.A.; Coldren, L.A.; DenBaars, S.P.	IEEE Photonics Technology Letters, July 1997, V9, N7: pp. 994-996.	Journal
114	1997	“Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications,” San-Liang Lee; Heimbuch, M.E.; Cohen, D.A.; Coldren, L.A.; and DenBaars, S.P.	IEEE Journal of Selected Topics in Quantum Electronics, April 1997, V3, N2: pp. 615-27.	Journal
115	1997	“Substrate engineering of 1.55 mu m lasers,” Abraham, P.; Black, A.K.; Margalit, N.M.; Hawkins, A.R.; and DenBaars, S.P.	IEEE, 1997. pp. 455-458.	Conference Proceedings
116	1997	“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature,” Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M.; Bowrs, J.E.and DenBaars, S.P.	Applied Physics Letters, 28 July 1997, V71, N4: pp. 425-427.	Journal
117	1997	“Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 Ghz,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Nguyen, N.X.; Mishra, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, Sept. 1997, V18, N9: pp. 438-440.	Journal
118	1997	"MOCVD of Group III-Nitrides," S. DenBaars and S. Keller, Chapter 2, Gallium Nitride Materials and Devices, J. Pankove and T. Moustakas,	Academic Press, 1197, V50, pp. 11-37.	Journal
119	1997	"Reconfigurable Optical Properties in InGaN/GaN quantum wells,” I. Shmagi, J. Muth, R. Kolbas, M.P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars.	Appl. Physics Lett. V71 N1: pp. 1455.	Journal
120	1997	"Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD," M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars.	MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41.	Journal
121	1997	"Electron Beam Pumped MQW InGaN/GaN Laser," V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, S, DenBaars, M.D. Tiberi , T. George.	MRS Internet Journal of Nitride Research, Volume 2, Article Number 38.	Journal
122	1997	"Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices," S. DenBaars.	IEEE Special Issue on Optoelectronics, 1997.	Conference Proceedings
123.	1997	"MOCVD Growth and Properties of InGaN/Gan MQW," S. Keller, A. Abare, M. S. Minsky, D. H. Wu, M. P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U.K. Mishra, and S. DenBaars.	Proceeding of the International Conference on SiC and Group III - Nitrides, 1997	Conference Proceedings
124.	1997	“Role of defect diffusion in the InP damage profile” D.G. Yu, C.H. Chen, A.L. Holmes Jr., S.P. DenBaars, E.L. Hu.	J. Vac. Sci. Technol. B V15, N6	Journal
125.	1997	“Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics” S.P. DenBaars	Intl. J. of High Speen Electronics and Systems, V8, N2: pp. 265-282	Journal
126.	1997	“Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy” E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck.	J. Appl. Phys. , V82, N11: pp. 5472-5479	Journal
127.	1997	“InP islands on InGaP/GaAs (001): island separation distributions” S. Varma, C.M. Reaves, V. Bressler-Hill, S.P. DenBaars, W.H. Weinberg	Science Surface, V393, N1-3: pp. 24-33	Journal
128.	1997	“Well-width dependent dtudies of InGaN-GaN single –quantum wells using time-resolved photoluminescence techniques” Chi-Kuang Sun, S. Keller, Tien-Lung Chiu, G. Wang, M.S. Minsky, J.E. Bowers, S.P. DenBaars	IEEE Journal of Selected Topics in Quantum Electronics, V3, N3: pp. 731-738	Journal
129.	1997	“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature” C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M.S. Minsky, S.P. DenBaars, J.E. Bowers	Applied Physics Letters, V71, N4: pp. 425-427	Journal
130.	1997	“Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures” Z. Dziuba, J. antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra	J. Appl. Phys. , V82, N6: pp. 2996-3002	Journal
131.	1997	“Short-channel Al/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz.” Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. DenBaars, U.K. Mishra	Electronics Letters, V33, N20: pp. 1742-1743	Journal
132.	1997	“Compact InGaAsP/InP 1x2 optical switch based on carrier induced supression of modal interference” G.A. Fish, L.A. Coldren, S.P. DenBaars	Electronics Letters, V33, N22: pp. 1898-1900	Journal
133.	1997	“Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements” J.F. Muth, A.J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V71, N18: pp. 2572-2574	Journal
134.	1997	“In/sub x/Ga/sub 1-x/N/Al/sub y/Ga/sub 1-y/N violet light emitting dioded with reflective p-contacts for high single sided light extraction” P.M. Menz, P. Kellawon, R. Van Roijen, P. Kozodoy, S. DenBaars	Electronics Letters, V33, N24: pp. 2066-2068	Journal
135.	1998	“High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells” S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V72, N13: pp. 1623-1625	Journal
136.	1998	“Spiral Growth of InGaN Nanoscale Islands on GaN” S. Keller, U.K. Mishra, S.P. DenBaars, W. Seifert.	Japanese J. Appl. Phys. V37 Part 2, No. 4B: pp. 431-434	Journal
137.	1998	“Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition” P.J. Hansen, Y.E. Strausser, A.N. Erickson, E.J. Tarsa, P. Kozodoy, E.G. Brazel, J.P. Ibbetson, U. Mishra, V. Narayanamurti, S.P. DenBaars, J.S. Speck	Applied Physics Letters V72, N 18: pp. 2247-2249	Journal
138.	1998	“Growth and properties of InGaN nanoscale islands on GaN” S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U. K. Mishra, S.P. DenBaars, W. Seifert	Journal of Crystal Growth V189, N190: pp. 29-32	Journal
139.	1998	“Dislocation generation in GaN heteroepitaxy” X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck	Journal of Crystal Growth V189, N190: pp. 231-243	Journal
140.	1998	“MOVPE growth and characterization of Mg-doped GaN” P.Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra	Journal of Crystal Growth V195: pp. 265-269	Journal
141.	1998	“Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” H. Marchand, J.P. Ibbetson, P.T. Fini, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	Journal of Crystal Growth V195: pp. 328-332	Journal
142.	1998	“Cleaved and Etched Facet Nitride Laser Diodes” A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller, J.S. Speck, J.E. Bowers, U.K. Mishra, L.A. Coldren, S.P. DenBaars	IEEE Journal of Selected Topics in Quantum Electronics V4, N3: pp. 505-509	Journal
143.	1998	“Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays” R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N3: pp. 405-407	Journal
144.	1998	“Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes” S. Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U.K. Mishra, L.A. Coldren, D.R. Clarke, S.P. DenBaars	Applied Physics Letters V73, N4: pp. 496-498	Journal
145.	1998	“Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells” T.J. Schmidt, Y-H Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N5: pp. 560-562	Journal
146.	1998	“Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N8: pp. 1128-1130	Journal
147.	1998	“The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor depostion” P. Fini, X. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, J.S. Speck	Japanese J. Appl. Phys. V37, N8: pp. 4460-4466	Journal
148.	1998	“Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” H. Marchand, X.H. Wu, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N6: pp. 747-749	Journal
149.	1998	“Electrical characterization of GaN p-n junctions with and without threading dislocations” P. Kozodoy, J.P. Ibbetson, H. Marchand, P.T. Fini, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N7: pp. 975-977	Journal
150.	1998	“Ridge Waveguide Sampled Grating DBR Lasers with 22-nm Quasi-Continuous Tuning Range” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters V10, N9: pp. 1211-1213	Journal
151.	1998	“ ‘S-shaped’temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells” Y-H Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N10: pp. 1370-1372	Journal
152.	1998	“Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures” S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars	Applied Physics Letters V73, N14: pp. 2006-2008	Journal
153.	1998	“High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts” C-H Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E.L. Hu, S.P. DenBaars, U.K. Mishra, Y. Wu	Applied Physics Letters V73, N21: pp. 3147-3149	Journal
154.	1998	“Excitation energy-dependent optical characteristics of InGaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N22: pp. 3181-3183	Journal
155.	1998	“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper	Applied Physics Letters V73, N26: pp.3887-3889	Journal
156.	1998	“Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile” G.A. Fish, B. Mason, S.P. DenBaars, L.A. Coldren	J. Crystal Growth, V186, N1-2: pp. 1-7	Journal
157.	1998	“Optical properies of GaAs confined in the pores of MCM-41” V. I. Srdanov, I. Alxneit, G.D. Stucky, C.M. Reaves, S.P. DenBaars	J. Physical Chemistry, V102, N18: pp. 3341-3344	Journal
158.	1998	“Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells” X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V72, N6: pp. 692-694	Journal
159.	1998	“High Al-content AlGaN/GaN MODFET’s for ultrahigh performance” Y.-F Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, V19, N2: pp. 50-53	Journal
160.	1998	“Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects” G.A. Fish, L.A. Coldren, S.P. DenBaars	IEEE Photonics Technology Letters, V10, N2: pp. 230-232	Journal
161.	1998	“Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence” M.S. Minsky, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S.P. DenBaars	Applied Physics Letters, V72, N9: pp. 1066-1068	Journal
162.	1998	“Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal of Nitride Semiconductor Research, V3	Journal
163.	1998	“Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering” A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B.Stephanson, P. Fini, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V72, N23: pp. 2972-2974	Journal
164.	1998	“Catastrophic optical damage in GaInN multiple quantum wells” D.A. Cohen, T. Magalith, A.C. Abare, M.P. Mack, L.A. Coldren, S.P. DenBaars, D.R. Clarke	Applied Physics Letters, V72, N25: pp. 3267-3269	Journal
165.	1998	“Improvement of GaN-based laser diode facets by FIB polishing” M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars	Electronics Letters, V34, N13: pp. 1315-1316	Journal
166.	1998	“Tunable sample-grating DBR lasers with integrated wavelength monitors” B. Mason, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters, V10, N8: pp. 1085-1087	Journal
167	1998	“Compact, 4x4 InGaAsP-InP optical crossconnect with a scaleable architecture” G.A. Fish, B. Mason, L.A. Coldren, S.P. DenBaars	IEEE Photonics Technology Letters, V10, N9: pages 1256-1258	Journal
168.	1998	“Pump-probe spectoscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN” T.J. Schmidt, Y.-H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V73, N13: pp. 1892-1894	Journal
169.	1998	“Substrate reactivity and ‘controlled contamination’in metalorganic chemical vapor deposition of GaN on sapphire” Y. Golan, P. Fini, S.P. DenBaars, J.S. Speck	Japanese Journal of Applied Physics, V37, Pt.1, N9A: pp. 57-65	Journal
170.	1998	“A first look at AlGaN/GaN HBTs” L. McCarthy, P. Kozodoy, M. Rodwell, S.P. DenBaars, U.K. Mishra	Compound Semiconductor Magazine, V4, N8	Magazine
171.	1998	“Optical properties of InGaN/GaN quantum wells with Si-doped barriers” M. Minsky, S. Chichibu, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, S.P. DenBaars	Japanese Journal of Applied Physics, V37, Pt. 2 ,N11B: pp. 1362-1364	Journal
172.	1998	“Stimulated emission characteristics of InGaN/GaN multiple quantum wells:Excitation length and excitation density”	Applied Physics Letters, V73, N25: pp. 3689-3691	Journal
173.	1998	“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper	Applied Physics Letters, V73, N26: pp. 3887-3889	Journal
174.	1998	“Gallium nitride based materials and their application for light emitting devices” S. Keller, S.P. DenBaars	Current Opinion in Solid State & Materials Science, V3, N1: pp. 45-50	Journal
174a.	1998	Chapter 2 pp.11-35 “Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides”S. P. DenBaars, S. Keller	J. I. Pankove, T.D. Moustakas Semiconductors and Semimetals, V50: Gallium Nitride (GaN) I Academic Press: San Diego	Book Chapter
175.	1999	“Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN” G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P.H. Fuoss, P. Fini, S.P. DenBaars, J.S. Speck	MRS Bulletin/Jan.: pp. 21-25	Journal
176.	1999	“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleischer, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V74, N10: pp. 1460-1462	Journal
177.	1999	“Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” S.J. Rosner, G. Girolami, H. Marchand, P.T. Fini, J.P. Ibbetson, L. Zhao, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck	Applied Physics Letters V74, N14: pp. 2035-2037	Journal
178.	1999	“Dislocation mediated surface morphology of GaN” B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck	Journal of Applied Physics V85, N9: pp. 6470-6476	Journal
179.	1999	“Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters V11, N6: pp. 638-640	Journal
180.	1999	“Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells’ S.Fleisher, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars, J. Bowers	Ultrafast Electonics and Optoelectronics: Snow Mass, CO April 12-16	Conference Proceedings
181.	1999	“Near-field scanning optical microscopy of indium gallium nitride multple-quantum-well laser diodes” D. Young, M. Mack, A. Abare, M. Hansen, L. Coldren, S. DenBaars, E. Hu , D. Awschalom	Applied Physics Letters; V74, N16	Journal
182.	1999	“Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings” A. Abare, M. hanson, J. Speck, L. coldren, s. DenBaars	Device Research Conferecne, paper no. VII.B-6; Santa Barbara, CA	Conferece Proceedings
183.	1999	“Indium tin oxide contacts to gallium nitride optoelectronic devices” T. Margalith, O. Buchinsky, D. Cohen, A. Abare, M. Hansen, S. DenBaars, L. Coldren	Applied Phyics Letters; V7, N26	Journal
184.	1999	“Improved characterstics of InGaN multi-quantum well laser diodes grown on laterally overgrown GaN on sapphire” M, Hanson, P. Fini, L. Zhao, A. Abare, J. Speck, L. coldren, S. DenBaars	Elecronic Materials Conf.; Santa Barbara, CA – post deadline paper Session R, Electronic Materials Conf., June 30 – July 2, 1999	Conference Proceeding
185.	1999	High-performance (Al,Ga)N-based solar-blind ultraviolet p-I-n detectors on laterally epitaxially overgrown GaN, G. Parish, S. Keller, P. Kozodoy, J.P. Ibbitson, H. Marchand, P.T. Fini, S.B. Fleischer, E.J. Tarsa , S.P. DenBaars, and U.K. Mishra.	Applied Phyics Letters; V75, N2: pp. 247-249.	Journal
186.	1999	High-quality coalescense of laterally overgrown GaN stripes on GaN/sapphire seed layers, P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U. K. Mishra and J.S. Speck.	Applied Phyics Letters; V75, N12: pp. 1706-1708.	Journal
187.	1999	Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings” A.C. Abare, M. Hansen, J. S. Speck, S. P. DenBaars and L. A. Coldren.	Electronics Letters, Sept. 2, 1999, V35, N18: pp. 205-206.	Journal
188.	1999	“Effect of AlGaN/GaN strained layer superlattice period of InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars	Phys. Stat. Sol., V176: pp. 59-62	Journal
189.	1999	“Optical Spectroscopy of InGaN/GaN quantum wells” E. Berkowiz, D. Gershoni, G. Bahir, a. Abare, S DenBaars, L. Coldren	Phys. Stat. Sol. 216,291	Journal
190.	1999	“Embedded delelctric grating distributed feedback nitride laser diode” A. Abare, M. Hansen, J. speck, L. coldren, S. DenBaars	International conference on nitride Semiconductros, Paper no. WePO61: Montpeliier, France	Conference Proceeding
191.	1999	“Photoresponse and physical properties of photoconductor and photovoltaic GaN based UV detectors” V. Garber, G. Bahit, J. Salzman, A. Abare, S. DenBaars, L. coldren	International conference on Niride Semiconductoes: montpellier, France- paper no. WePO35	Conference Proceeding
192.	1999	“Monolithic integration of a widely tunable laser and an electro-absorptoin modulator” B. Mason, G. Fish, S. DenBaars, L. Coldren	Integrated Photonic Research 99’; Santa Barbara, CA-paper no. RME2	Conference Proceeding
193.	1999	“Compact, 1.55 µm spot-size converters for InP based photonic integrated circuits” G. Fish, B. mason, L. coldren, s. DenBaars	Integrated Photonics Research Conference ’99; santa Barbara, CA-paper no. RWD4	Conference Proceedings
194.	1999	“Monolithic InP Optical Crossconnects: 4x4 and beyond” G. Fish, B. Mason, L. coldren, S. DenBaars	Photonics in Switching; Santa Barbara, CA-paper no. JWB2	Conference Proceedings
195.	1999	“Transparent contact to p-GaN: indium tin oxide/titanium nitride” O. Buchinsky, T. Margalith, D. Cohen, A. Abare, S. DenBaars, L. coldren	LEOs Summer Topicals; San Diego, CA-paper no. FBI 3	Conference Proceedings
196.	1999	“Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells” C. Sun, J. lLiang, C. Stanton, A. Abare, L. coldren, S. DenBaars	Applied Physics Letters; V75:N9	Journal
197.	1999	“Optical Crossbar Switches on InP” G. Fish, B. Mason, L. coldren, S. DenBaars	LEOS ’99; San Francisco, CA- paper no. WC1	Conference Proceeding
198.	1999	“Improved Characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao, A. Abare, L. Coldren, J. Speck, S. DenBaars	Materials Research Society Meeting; Boston, MA-paper no. W1 3	Journal
199.	1999	“Optical properties of InGaN quantum wells” S.F. Chichibu, A.C. Abare, M.P. Mack,M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Soto, S. Nakamura	Materials Science and Engineering B59, pp. 298-306	Journal
200.	1999	“High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: influence of Si-Doping concentration” Y.-H. Cho, F. Fedler, R.J. Hauenstein, G.H. Park, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Journal of Applied Physics, V85, N5: pp. 3006-3008	Journal
201.	1999	“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleisher, J.S. Speck, S.P. DenBaars, T. Deguchi, T. Soto, S. Nakamura	Applied Physics Letters, V74, N10: pp. 1460-1462	Journal
202.	1999	“Low-temperature scanning tunneling microscope-induced luminescsence of an InGaN/GaN multiquantum well” S. Evoy, C.K. Harnett, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V74, N10: pp. 1457-1459	Journal
203.	1999	“Structural and optical properties of GaN laterally overgrown on Si(111) by metal organic vapor deposition using an AlNbuffer layer” H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal, V4S1	Journal
204.	1999	“Study of temperature effects on loss mechanisms in 1.55m laser diodes with In/sub 0.81/Ga/sub 0.19/P electron stopper layer” P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers	Semiconductor Science and Technology, V14, N5: pp. 419-424	Journal
205.	1999	“Observation of growth modes during metal-organic chemical vapor deposition of GaN” G.B. Stephenson, J.A. Eastman, C. Thompson, O. Auciello, L.J. Thompson, A, Munkholm, P. Fini, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V74, N22: pp. 3326-3328	Journal
206.	1999	“Ultrafast electron dynamics study of GaN” C.-K. Sun, Y.-L. Huang, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V59, N21: pp. 13535-13538	Journal
207.	1999	“High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S, Speck	Applied Physics Letters, V74 N23: pp. 3528-3530	Journal
208.	1999	“Enhanced Mg doping efficiency in Al/sub 0.2/Ga/sub 0.8/N/GaN superlattices” P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra	Applied Physics Letters, V74, N24: pp. 3681-3683	Journal
209.	1999	“AlGaN/GaN heterojunction bipolar transistor” L.S. McCarthy, P. Kozodoy, M.J. Rodwell, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, V20, N6: pp. 277-279	Journal
210.	1999	“AlGaN/GaN HBTs using regrown emitter” J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, U.K. Mishra	Electronics Letters, V35, N19: pp. 1671-1673	Journal
211.	1999	“Surface structure of GaN(0001) in the chemical vapor deposition environment” A. Munkholm, G.B. Stephenson, J.A. Eastman, C. Thompson, P. Fini, J.S. Speck, O. Auciello., P.H. Fuoss, S.P. DenBaars	Physical Review Letters, V83, N4: pp. 741-744	Journal
212.	1999	“Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies” H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh, S.P. DenBaars	IEEE Journal of Quantum Electronics, V35, N10: pp. 1483-1490	Journal
213.	1999	“Coupling of InGaN quantum-well photoluminescence to silver surface plasmons” I. Gontijo, M. Boroditsky, E. Yablonovich, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V60, N16: pp. 11564-11567	Journal
214.	1999	“Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Ventury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, U.K. Mishra	Journal of Applied Physics, V86, N8: pp. 4520-4526	Journal
215.	1999	“Polarization-enhanced Mg doping of AlGaN/GaN superlattices” P. Kozodoy, Y.P. Smorchkova, M. Hansen., H. Xing, S.P. DenBaars, U.K. Mishra, A.W. Saxler, R. Perrin, W.C. Mitchel	Applied Physics Letters, V75, N16: pp. 2444-2446	Journal
216.	1999	“Structural and optical characteristics of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells with different In compositions” Y.-H. Kwon, G.H. Gainer, S. Bidnyk, Y.H. Cho, J.J. Song, M. Hansen, S.P. DenBaars	Applied Physics Letters, V75, N17: pp. 2545-2547	Journal
217.	1999	“GaN-based FETs for Microwave Power Amplification” Y.F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, U.K. Mishra	IEICE Trans. Electron., VE82-C N11: pp. 1895-1905	Journal
218.	1999	“Femtosecond Z-scan measurement of GaN” Y.-L. Huang, C.-K. Sun, J.-C Liang, S. Keller, M.P. Mack, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V75, N22: pp. 3524-3526	Journal
219.	1999	“Large interband second-order susceptibilities in In/sub x/Ga/sub 1-x/N/GaN quantum wells” H.Schmidt, A.C, Abare, J.E.Bowers, S.P. DenBaars, A. Imamoglu,	Applied Physics Letters, V75, N23: pp. 3611-3613	Journal
220.	1999	“Thermal conductivity of lateral epitaxial overgrown GaN films” C.-Y Luo, H. Marchand, D.R. Clarke, S.P. DenBaars	Applied Physics Letters, V75, N26: pp. 4151-4153	Journal
221.	1999	“Thermal annealing of InGaN/GaN strained-layer quantum wells” M.C.-Y. Chan, K.-O. Tsang, E.H. Li, S.P. DenBaars	MRS Internet Journal, V4S1, G6.25	Journal
222.	1999	“Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process” H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal, V4S1, G4.5	Journal
223.	1999	“Spectroscopic studies in InGaN quantum wells” S.F. Chichibu, T. Sota, K. Wada., S.P. DenBaars, S. Nakamura	MRS Internet Journal, V4S1, G2.7	Journal
224.	1999	“Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells” Y.-H. Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal, V4S1, G2.4	Journal
225.	1999	“Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells” Y.-H. Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal,V4S1, G6.44	Journal
226.	1999	“Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells” T.J. Schmidt, S. Bidnyk, Y.-H. Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal, V4S1, G6.54	Journal
227.	1999	“Scanning tunneling microscope-induced luminescence of GaN at threading dislocations” S. Evoy, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars	Journal of Vacuum Science & Technology B, V17, N1: pp. 29-32	Journal
228.	2000	“Sims investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlXGa 1-X N,” G. Parish, S. Keller, S.P. DenBaars and U.K. Mishra	Journal of Electronic Materials, V29, N1, pp. 15-20.	Journal
229.	2000	“Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray defraction” P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J.S. Speck	Journal of Crystal Growth, V209: pp. 581-590	Journal
230.	2000	“Characterization of an AlGaN/GaN two-dimensional electron gas structure” A. Saxler, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck	Journal of Applied Physics, V87, N1: pp. 369-374	Journal
231.	2000	“Depletion region effects in Mg-doped GaN” P. Kozodoy, S.P. DenBaars, U.K. Mishra	Journal of Applied Physics, V87, N2: pp. 770-775	Journal
232.	2000	“Improved characteristics of InGaN multiple –quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao. A.C. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars	Applied Physics Letters, V76, N5: pp. 529-531	Journal
233.	2000	“Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	Applied Physics Letters, V76, N6: pp. 718-720	Journal
234.	2000	“Heavy doping effects in Mg-doped GaN” P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel	Journal of Applied Physics, V87, N4: pp. 1832-1835	Journal
235.	2000	“Epitaxially-grown GaN junction field effect transistors” L. Zhang, L.F. Lester, A.G. Baca, R.J. Shul, P.C. Chang, C.G. Willison, U.K. Mishra, S.P. DenBaars, J.C. Zolper	IEEE Transactions on Electron Devices, V47, N3: pp. 507-511	Journal
236.	2000	“Linear and nonlinear optical properties of In/sub x/Ga/sub 1-x/N/GaN heterostructures” Y.H. Cho, T.J. Schmidt, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V61, N11: pp. 7571-7588	Journal
237.	2000	“Distributed feedback laser diodes employing embedded dielectric gratings located above the active region” A.C. Abare, S.P. DenBaars, L.A. Coldren	IEICE Trans. Electron, VE83-C, N4: pp. 560-563	Journal
238.	2000	“Transient processes in AlGaN/GaN heterostructures field effect transistors” S.L. Rumyantsev, M.S. Shur, R. Gaska, X. Hu, A. Khan, G. Simin, J. Yang, N. Zhang, S.P. DenBaars, U.K. Mishra	Electronics Letters, V36, N8: pp. 757-759	Journal
239.	2000	“Measured and calculated radiative lifetime and optical absorption of In/sub x/Ga/sub 1-x/ N/GaN quantum structures” E. Berkowitz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C, Abare, S.P. DenBaars, L.A. Coldren	Physical Review B, V61, N16: pp. 10994-11008	Journal
240.	2000	“High voltage operation (>80V) of GaN bipolar junction transistors with low leakage” J.B. Limb, H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, U.K. Mishra	Applied Physics Letters, V76, N17: pp. 2457-2459	Journal
241.	2000	“Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies” Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J. Singh	Journal of Applied Physics, V87, N11: pp. 7981-7987	Journal
242.	2000	“Channeling as a mechanism for dry etch damage in GaN” E.D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S.P. DenBaars, L.A. Coldren, U.K. Mishra, E.L. Hu	Applied Physics Letters, V76, N26: pp. 3941-3943	Journal
243.	2000	“In Situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN” P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, M.V. R. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V76, N26: pp. 3893-3895	Journal
244.	2000	“Ultrafast optical characterization of carrier capture times in In/sub x/Ga/sub 1-x/ N multiple quantum wells” U. Ozgur, M.J. Bergmann, H.C. Casey, Jr., H.O. Everitt, A.C. Abare, S. Keller, S.P. DenBaars	Applied Physics Letters, V77, N1: pp. 109-111	Journal
245.	2000	“Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars	Mat. Res. Soc. Symp., V595, W1.4.1-W1.4.6	Journal
246.	2000	“Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes” A. Hierro, D. Kwan, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V76, N21: pp. 3064-3066	Journal
247.	2000	“Transition between the 1x1 and (√3x2√3)R30 surface structures of GaN in the vapor-phase environment” A. Munkholm, C. Thompson, G. B. Stephenson, J.A. Eastman, O. Auciello, P. Fini, J.S. Speck, S.P. DenBaars	Physica B, V283: pp. 217-222	Journal
247a.	2000	Chapter 1 pp. 1-25 “Basic Physics & Materials Technology of GaN LEDs and LDs”Steven P. DenBaars	S. Nakamura, S.F. Chicibu Introduction to Nitride SemiconductorBlue Lasers and Light Emitting Diodes. Taylor & Francis: London	Book Chapter
248.	2000	“Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, U.K. Mishra	Applied Physics Letters, V77, N2: pp. 250-252	Journal
249.	2000	“In situ studies of the effect of silicon on GaN growth modes” A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciello, M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars	Journal of Crystal Growth, V.221, pp. 98-105	Journal
250.	2000	“Layer by layer growth of GaN induced by silicon” A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck	Applied Physics Letters, V77 N11, pp. 1626-1628	Journal
251.	2000	“Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy” B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J. S. Speck	Applied Physics Letters, V77 N18, pp. 2885-2887	Journal
252.	2000	“Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel	Japanese Journal of Applied Physics, V39 N10B (part 2), pp. L1023-L1025	Journal
253.	2000	“Dislocation reduction in GaN films through selective island growth of InGaN” S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V77 N17, pp. 2665-2667	Journal
254.	2000	“Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates” B. Moran, M. Hansen, M. D. Craven, J. S. Speck, S. P. DenBaars	Journal of Crystal Growth, V221, pp. 301-304	Journal
255.	2000	“Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure” S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck	Journal of Applied Physics, V88, N11, pp. 6583-6588	Journal
256.	2001	“Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes” S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura	Physica Status Solidi A, V183, pp. 91-98	Journal
257.	2001	“Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells” G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, V78, N5, pp. 640-642	Journal
258.	2001	“Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells” Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars	Applied Physics Letters, V78, N7, pp. 928-930	Journal
259.	2001	“Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells” C.-K. Sun, Y.-K. Huang, J.-C. Liang, A. Abare, S. P. DenBaars	Applied Physics Letters, V78, N9, pp. 1201-1203	Journal
260.	2001	“Spin coherence and dephasing in GaN” B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. E. Grimaldi, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu, D. D. Awschalom	Physical Review B, V63, pp. 121201-1-121201-4	Journal
261.	2001	“Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications” A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, E. L. Hu	Applied Physics Letters, V78, N13, pp. 1945-1947	Journal
262.	2001	“GaN HBT: Toward an RF Device” L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra	IEEE Transactions on Electron Devices, V48, N3, pp. 543-551	Journal
263.	2001	“Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB” S. Keller, Y.-F. Wu, G. Parish, B. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra	IEEE Transactions on Electron Devices, V48, N3, pp. 552-559	Journal
264.	2001	“Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors” L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, U. K. Mishra	Applied Physics Letters, V78, N15, pp. 2235-2237	Journal
265.	2001	“Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors”	Journal of Applied Physics, V89 N12, pp. 7846-7851	Journal
266.	2001	“Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN” E. D. Haberer, C. H. Chen, M. Hansen, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu	J. Vac. Sci. Technol. B, V19 N3, pp. 603-608	Journal
267.	2001	“Channeling as a mechanism for dry etch damage in GaN” E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. DenBaars, L. Coldren, U. Mishra, E. L. Hu	Appl. Phys. Lett., V76 N26, pp. 3941-3943	Journal
268.	2001	“Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy” C. K. Sun, S. W. Chu, S. P. Tai, S. Keller, A. Abare, U. K. Mishra, S. P. DenBaars	Scanning, May-June 2001, V.23 N3, pp. 182-192	Magazine
269.	2001	“Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure” Z. Dziuba, M. Gorska, J. Antoszewski, A. Babinski, P. Kozodoy, S. Keller, B. Keller, S. P. DenBaars, U. K. Mishra	Applied Physics A- Materials Science & Processing , V72 N6, pp. 691-698	Journal
270.	2001	“Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa 1-xN/GaN double heterostructures” C. K. Choi, B. D. Little, Y. H. Kwon, J. B. Lam, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars	Physical Review B, V6319 N19, pp. U262-U267	Journal
271.	2001	“Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells” M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars	Semiconductor Science and Technology, V16 N5, pp. 406-412	Journal
272.	2001	“Effect of growth termination conditions of the performance of AlGaN/GaN high electron mobility transistors” S. Keller, R. Ventury, G. Parish, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V78 N20, pp. 3088-3090	Journal
273.	2001	“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V78 N19, pp. 2876-2878	Journal
274.	2001	“Selective area mass transport reqrowth of gallium nitride” S. Heikman, S. P. DenBaars, U. K. Mishra	Japanese Journal of Applied Physics, part 1, V40 N2A, pp. 565-566	Journal
275.	2001	“Investigations of chemical vapor deposition of GaN using synchotron radiation” C. Thompson, G. B. Stephenson, J. A. Eastman, A. Munkholm, O. Auciello, M. V. R. Murty, P. Fini, S. P. DenBaars, J. S. Speck	Journal of the Electrochemical Society, V148 N5, pp. C390-C394	Journal
276.	2001	“Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states” C. K. Sun, J. C. Liang, X. Y. Yu, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, V78 N18, pp. 2724-2726	Journal
277.	2001	“Gallium nitride based transistors” H. Xing, S. Keller, Y. F. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra	Journal of Physics-Condensed Matter, V13 N32, pp. 7139-7157	Journal
278.	2001	“Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures” P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Gandjean, J. Massies	Physical Review B, V64 N11, pp. U459-U466	Journal
279.	2001	“AlGaN/AlN/GaN high-power microwave HEMT” L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Ke.ller, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, V22 N10, pp. 457-459	Journal
280.	2001	“Infrared and Raman-scattering studies in a single-crystalline GaN nanowires” H. L. Liu, C. C. Chen, C. T. Chia, C. C. Yeh, C. H. Chen, M. Y. Yu, S. Keller, S. P. DenBaars	Chemical Physical Letters, Vol. 345 No. 3-4, pp. 245-251	Journal
281.	2001	“Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck	Journal of Crystal Growth, V233 N4, pp. 709-716	Journal
282.	2001	“Influence of growth temperatures and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, W. C. Mitchel	Japanese Journal of Applied Physics, V40 N11, pp.6235-6238	Journal
283.	2001	“Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates” T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, S. P. DenBaars	Journal of Applied Physics, V79 N18, pp. 2907-2909	Journal
284.	2001	“Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy” S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura	Applied Physics Letters, V79 N22, pp. 3600-3602	Journal
285.	2001	“Capture kinetics of electron traps in MBE-grown n-GaN”A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel	Physical Status Solidi B, V228, N1, pp. 309-313	Journal
286.	2001	“Indium –surfectant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V79 N21, pp. 3361-3363	Journal
287.	2001	“Generation of coherent acoustic phonons in strained GaN thin films” Y. K. Huang, G. W. Chern, C. K. Sun, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars	Applied Physics Letters, V79 N20, 3361-3363	Journal
288.	2001	"AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy" I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra	Journal of Applied Physics, Vol. 90 No. 10, pp. 5196-5201 Correction/Addition Vol. 91 No. 7, p. 4780	Journal
289.	2001	“Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN” A. Hierro, M. Hansen, J. J. Boeckl, L. Zhao, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel	Physica Status Solidi B, Vol. 228 No. 3, pp. 937-946	Journal
290.	2001	“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, B. Moran, R. Coffie, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 1, pp. 355-358	Journal
291.	2001	“Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate” G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 1, pp. 297-300	Journal
292.	2001	“Kilovolt AlGaN/GaN HEMTs as switching devices” N. Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma	Physica Status Solidi A, Vol. 188 No. 1, pp. 213-217	Journal
293.	2001	“Indium surfectant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 2, pp. 775-778	Journal
294.	2001	“Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes” M. Hansen, L. F. Chen, J. S. Speck, S. P. DenBaars	Physica Status Solidi B, Vol. 228 No. 2, pp. 353-356	Journal
295.	2001	“Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers” C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars	Physical Review B, Vol. 6424 No. 24, pp. 5339:U608-U613	Journal
296.	2001	“Photoelectrochemical undercut etching for fabrication of GaN microelectrochemical systems” A. R. Stonas, N. C. MacDonald, K. L. Turner, S. P. DenBaars, E. L. Hu	Journal of Vacuum Science & Technology B, Vol. 19 No. 6, pp. 2838-2841	Journal
297.	2002	“Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition” E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Frietas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra	Physical Review B, Vol. 6508 No. 8, pp. U344-U353	Journal
298.	2002	“Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors” L. S. McCarthy, I. P. Smorchkova, P. Fini, M. J. W Rodwell, J. Speck, S. P. DenBaars, U. K. Mishra	Electronics Letters, Vol. 38 No. 3, pp. 144-145	Journal
299.	2002	“Systematic characterization of Cl-2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs” D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, Vol. 23 No. 2, pp. 76-78	Journal
300.	2002	“Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy” A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. A. Ringel	Applied Physics Letters, Vol. 80 No. 5, pp. 805-807	Journal
301.	2002	“Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN” M. Hansen, P. Fini, M. Craven, B. Heying, J. S. Speck , S. P. DenBaars	Journal of Crystal Growth, Vol. 234, pp. 623-630	Journal
302.	2002	“Mg-rich precipitates in the p-type doping of InGaN-based laser diodes” M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 80 No. 14, pp. 2469-2471	Journal
303.	2002	“GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design” S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, Vol. 80 No. 23, pp. 4387-4389	Journal
304.	2002	“Chemical mechanical polishing of gallium nitride” P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars, D. R. Clarke	Electrochemical and Solid-State Letters, Vol. 5 No. 8, pp. 61-64	Journal
305.	2002	“Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar	Materials Science & Engineering B, Vol. 93, pp. 39-48	Journal
306.	2002	“Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy” P. Waltereit, M. D. Craven, S. P. DenBaars, J. S. Speck	Journal of Applied Physics, Vol. 92 No. 1, pp. 456-460	Journal
307.	2002	“Femtosecond dynamics of exciton bleaching in bulk GaN at room tempurature” Y. C. Huang, G. W. Chern, K. H. Lin, J. C. Liang, C. K. Sun, C. C. Hsu, S. Keller, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 1, pp. 85-87	Journal
308.	2002	“Structural characterization of nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 3, pp. 469-471	Journal
309.	2002	“Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra	Applied Physics Letters, Vol. 81 No. 3, pp. 439-441	Journal
310.	2002	“Threading dislocation reduction via laterally overgrown nonpolar (11 (2) over-bar0) a-plane GaN” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81, No. 7, pp. 1201-1203	Journal
311.	2002	“Tunable sampled-grating DBR lasers using quantum-well intermixing” E. J. Skogen, J. S. Barton, S. P. Denbaars, L. A. Coldren	IEEE Photonics Technology Letters, Vol. 14 No. 9, pp. 1243-1245	Journal
312.	2002	“Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy” C. Poblenz, T. Mates, M. Craven, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 81 No. 15, pp. 2767-2769	Journal
313.	2002	“A quantum-well-intermixing process for wavelength-agile photonic integrated circuits” E. J. Skogen, J. S. Barton, S. P. DenBaars, L. A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8 No. 4, pp. 863-869	Journal
314.	2002	“Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy” T. M. Katona, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 19, pp. 3558-3560	Journal
315.	2002	“Ultrashort hole capture time in Mg-doped GaN thin films” K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun, H. Xing, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 21, pp. 3975-3977	Journal
316.	2002	“Higher efficiency InGaN laser diodes with an approved quantum well capping configuration” M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 22, pp. 4275-4277	Journal
317.	2002	“Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys” D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, I. Smorchkova	Applied Physics Letters, Vol. 81 No. 23, pp. 4395-4397	Journal
317. (a)	2002	“Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)” T. M. Katona, J. S. Speck, S. P. DenBaars	Physica Status Solidi A, Vol. 194, pp. 550-553	Journal
317. (b)	2002	“Nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Physica Status Solidi A, Vol. 194, pp. 541-544	Journal
318.	2003	“AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching” Y. Gao, A. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu	Electronics Letters, Vol. 39 No. 1, pp. 148-149	Journal
319.	2003	“Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor” S. Estrada, H. Xing, A. Stonas, A. Huntington, U. Mishra, S. DenBaars, L. Coldren, E. Hu	Applied Physics Letters, Vol. 82, No. 5, pp. 820-822	Journal
320.	2003	“Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells” S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura	Journal of Applied Physics, Vol. 93, No. 4, pp. 2051-2054	Journal
321.	2003	“Memory effect and redistribution of Mg into sequencially regrown GaN layer by metalorganic chemical vapor deposition” H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra	Japanese Journal of Applied Physics, Vol. 42, No. 1, pp. 50-53	Journal
322.	2003	“High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology” V. Paidi, X. Shouxuan, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars, U. K. Mishra, S. Long, M. J. W. Rodwell	IEEE Transactions on Microwave Theory & Techniques, Vol. 51, No. 2, pp. 643-652	Journal
323.	2003	“1.3 mu m wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: a prospect for polarization control” Y. L. Okuno, J. Geske, K.-G. Gan, Y. J. Chiu, S. P. DenBaars, J. E. Bowers	Applied Physics Letters, Vol. 82, No. 15, pp. 2377-2379	Journal
324.	2003	“Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells” U. Ozgur, H. O. Everitt, S. Keller, S. P. DenBaars	Applied Physics Letters, Vol. 82, No. 9, pp. 1416-1418	Journal
325.	2003	“Metalorganic chemical vapor deposition of highly conductive Al_0.65Ga_0.35N films” P. Cantu, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, Vol. 82, No. 21, pp. 3683-3685	Journal
326.	2003	“Metalorganic chemical vapor deposition of group III nitrides – a discussion of critical issues” S. Keller, S.P. DenBaars	Journal of Crystal Growth, Vol. 248, pp. 479-486	Journal
327.	2003	“Growth and characteristics of Fe-doped GaN” S. Heikman, S. Keller, T.Mates, S. P. DenBaars, U. K. Mishra	Journal of Crystal Growth, Vol. 248, pp. 513-517	Journal
328.	2003	“Very high voltage operation (>330V) with high current gain of A1GaN/GaN HBTs” H.L. Xing, P.M. Chavarkar, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 24, No. 3, pp. 141-143	Journal
329.	2003	“Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures” S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, U. K. Mishra	Journal of Applied Physics, Vol. 93, No. 12, pp. 10114-10118	Journal
330.	2003	“Si doping effect on strain reduction in compressively strained A10.49Ga0.51N thin films” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck	Applied Physics Letters, Vol.83, No. 4, pp. 674-676	Journal
331.	2003	“Non-planar selective area growth and characterization of GaN and A1GaN” S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, F. Bertram, J. Christen	Japanese Journal of Applied Physics Part 1 – Regular Papers, Short Notes & Review Papers, Vol. 42, No.10, pp. 6276-6283	Journal
332.	2003	“Variation of structural and optical properties across an A1GaN/GaN HEMT structure directly imaged by cathodoluminescence micrscopy” F. Bertram, J. Christen, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra	Physica Status Solidi A-Applied Research, Vol. 200, No.1, pp. 183-186	Journal
333.	2003	“A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and Mach-Zehnder modulator” J.S. Barton, E.J. Skogen, M.L. Masanovic, S.P. DenBaars, L.A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1113-1117	Journal
334.	2003	“Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators” E.J. Skogen, J.W. Raring, S.P. DenBaars, L.A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1183-1190	Journal
335.	2003	“n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-infused at 550-750 degrees C” S. Estrada, A. Huntington, A. Stonas, H. Xing, U. Mishra, S. DenBaars, L. Coldren, E. Hu	Applied Physics Letters, Vol. 93, No. 12, pp. 560-562	Journal
336.	2003	“High-linearity class B power amplifiers in GaN HEMT technology” X. Shouxuan, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. P. DenBaars, U. Mishra, S. Long, M. J. W. Rodwell	IEEE Microwave & Wireless Components Letters, Vol. 13, No. 7, pp. 284-286	Journal
337.	2003	“Recombination dynamics of localized excitons in cubic In_xGa_1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate” S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura	Journal of Vacuum Science & Technology B, Vol. 21, No. 4, pp. 1856-1862	Journal
338.	2003	“Structural and morphological characteristics of planar(1120) a-plane gallium nitride grown by hydride vapor phase epitaxy” B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura	Applied Physics Letters, Vol. 83, No. 8, pp. 1554-1556	Journal
339.	2003	“Refractive index study of Al_xGa_1-xN films grown on sapphire substrates” N. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars	Journal of Applied Physics, Vol. 94, No. 5, pp. 2980-2991	Journal
340.	2003	“Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope” N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati	Journal of Applied Physics, Vol. 94, No. 7, pp. 4315-4319	Journal
341.	2003	“Observation of huge nonlinear absorption enhancement near exciton resonance in GaN” K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun	Applied Physics Letters, Vol. 83, No. 15, pp. 3087-3089	Journal
342.	2003	“High conductivity modulation doped AlGaN/GaN multiple channel heterostructures” S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, U. K. Mishra	Journal of Applied Physics, Vol. 94, No. 8, pp. 5321-5323	Journal
343.	2003	“Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition” M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, S. P. DenBaars	Japanese Journal of Applied Physics, Vol. 42, pp. L235-L238	Journal
344.	2003	“Crystallographic wing tilt in laterally overgrown GaN” C. Rodel, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars	Journal of Physics D: Applied Physics, Vol. 36, pp. A188-A191	Journal
345.	2003	“Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition” S. Keller, P. Waltereit, P. Cantu, U. K. Mishra, J. S. Speck	Optical Materials, Vol. 28, pp. 187-195	Journal
346.	2003	“Defect reduction in (1120) a-plane gallium nitride vial lateral epitaxial overgrowth by hydride vapor-phase epitaxy” B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura	Applied Physics Letters, Vol. 83, pp. 644-646	Journal
347.	2004	“High-power polarization-engineered GaN/A1GaN HEMTs without surface passivation” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 25, No. 1, pp. 7-9	Journal
348.	2004	“Power and linearity characteristics of GaN MISFETs on sapphire substrate” A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 25, No. 2, pp. 55-57	Journal
349.	2004	“AlGaN/GaN current aperture vertical electron transistors with regrown channels” I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, S. P. DenBaars	Journal of Applied Physics, Vol. 95, No. 4, pp. 2073-2078	Journal
350.	2004	“Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells” M. D. Craven, P. Waltereit, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 84, No. 4, pp. 496-498	Journal
351.	2004	“Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition” A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, S. A. Ringel	Applied Physics Letters, Vol. 84, No. 3, pp. 374-376	Journal
352.	2004	“AlGaN/GaN polarization-doped field effect transistor for microwave power applications” S. Rajan, H. Xing, S. DenBaars, U. K. Mishra, D. Jena	Applied Physics Letters, Vol. 84, No. 9, pp. 1591-1593	Journal
353.	2004	“Radiative and nonradiative processes in strain-free Al_xGa_1-x/N films studied by time-resolved photoluminescence and positron annihilation techniques” T. Onuma, S. F. Chichibu, A. Uedona, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars	Journal of Applied Physics, Vol. 95, No. 5, pp. 2495-2504	Journal
354.	2004	“Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition” M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 84, No. 8, pp. 1281-1283	Journal
355.	2004	“Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening” T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura	Applied Physics Letters, Vol. 84, No. 6, pp. 855-857	Journal
356.	2004	“Preparation of indium nitride micro-and nanostructures by ammonolysis of indium oxide” B. Schwenzer, L. Loeffler, R. Seshadri, S. Keller, F. F. Lange, S. P. DenBaars, U. K. Mishra	Journal of Materials Chemistry, Vol. 14, No. 4, pp. 637-641	Journal
357.	2004	“The growth of N-face GaN by MOCVD: effect of Mg, Si, and In” P. R. Tavernier, T. Margalith, J. Williams, D. S. Green, S. Keller, S. P. DenBaars, U. K. Mishra, S. Nakamura, D. R. Clarke	Journal of Crystal Growth, Vol. 264, No. 1-3, pp. 150-158	Journal
358.	2004	“Micro cavity effect in GaN-Based light-emitting diodes formed by laser lift-off and etch-back technique” T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura	Japanese Journal of Applied Physics Part 2 – Letters, Vol. 43, No.3B, pp. L411-L413	Journal
359.	2004	“Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%” P. Waltereit, H. Sato, C. Poblenz, D. S. Green, J. S. Brown, M. McLaurin, T. Katona, S. P. DenBaars, J. S. Speck, J. H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka	Applied Physics Letters, Vol. 84, No. 15, pp. 2748-2750	Journal
360.	2004	"Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN" T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 84, No. 24, pp. 5025-5027	Journal
361.	2004	"Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes" K.-G. Gan, C.-K. Sun, S. P. DenBaars, J. E. Bowers	Applied Physics Letters, Vol. 84, No. 23, pp. 4675-4677	Journal
362.	2004	"Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth" T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura	Applied Physics Letters, Vol. 84, No. 19, pp. 3768-3770	Journal
363.	2004	"High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication" Y. L. Okuno, S. P. DenBaars, J. E Bowers	Applied Physics Letters, Vol. 84, No. 18, pp. 3483-3485	Journal
364.	2004	"Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride" Y. Gao, M. D. Craven, J. S. Speck, S. P. DenBaars, E. L. Hu	Applied Physics Letters, Vol. 84, No. 17, pp. 3322-3324	Journal
365	2004	“Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. Denbaars, U.K. Mishra	J. of Elec. Mat. 33 (5): 422-425	Journal
366	2004	“Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching” Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. Denbaars, S. Nakamura, E.L. Hu	Jpn. J. of Appl. Phys., 43 (5A) pp. L637-L639	Journal
367	2004	“Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching” E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu	Appl. Phys. Lett., 85 (5), 762-764	Journal
368	2004	“MOCVD growth of AlGaN films for solar blind photodetectors” P.C. Alejandro, S. Keller, T. Li, U.K. Mishra, J.S. Speck, S.P. Denbaars	Phys. Stat. Sol. A 201 (9); 2185-2189	Journal
369	2004	“Orientation-mismatched wafer bonding for polarization control of 1.3 µm-wavelength vertical cavity surface emitting lasers (VCSEL)” Y.L. Okuno, J. Geske, Y.J. Chiu, S.P. Denbaars, J.E. Bowers	Institute of Physics Conference Series 174: 367-370	Journal
370	2004	“Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN” T.M. Katona, M.D. Craven, J.S. Speck, S.P. DenBaars	Appl. Phys. Lett., 85 (8), 1350-1352	Journal
371	2004	“Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth” E. Skogen, J. Raring, S. DenBaars, L. Coldren	Elec. Lett. 40 (16), 993-994	Journal
372	2004	“Wafer Bonding of GaN and ZnSSe for optoelectronic applications” A. Murai, L. McCarthy, U. Mishra, S.P. DenBaars, C. Kruse, S. Figge, D. Hommel	Jpn. J. of Appl. Phys., 43 (10A), L1275-1277	Journal
373	2004	“Nonpolar a-plane p-type GaN and p-n junction diodes” A. Chakraborty, H. Xing, M.D. Craven, S. Keller, T. Mates, J.S. Speck, S.P. DenBaars, U.K. Mishra	J. of Appl. Phys., 96 (8), pp.4494-4499	Journal
374	2004	“AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate” P.J. Hansen, L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, T.R. Taylor, S.P. DenBaars, U.K. Mishra, R.A. York, J.S. Speck	J. Vac. Sci. Technol. B 22(5), 2479-2485	Journal
375	2004	“Growth of thick (1120) GaN using a metal interlayer” P.R. Tavernier, B. Imer, S.P. DenBaars, D.R. Clarke	Appl. Phys. Lett., 85 (20), 4630-4632	Journal
376	2005	“Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties” B. Schwenzer, J. Hu, R. Seshadri, S. Keller, S.P. DenBaars, U.K. Mishra	Chem. Mater., 16, (24): 5088-5095	Journal
377	2005	“Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electrolu-minescence emission peak” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra	Appl. Phys. Lett., 85 (22), 5143-5145	Journal
378	2005	“Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching” E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu	Appl. Phys. Lett., 85 (22), 5179-5181	Journal
379	2005	“Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” H. Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra	Appl. Phys. Lett., 85 (22), 5254-5256	Journal
380	2005	“High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP” E.J. Skogen, J.S. Barton, J.W. Raring, L.A. Coldren, S.P. DenBaars	J. of Cryst. Growth 272, 564-569	Journal
381	2005	“Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren	Elec. Lett., 40 (25), 1599-1600	Journal
382	2005	“Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer” B. Moran, F. Wu, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck	J. of Cryst. Growth, 273, 38-47	Journal
383	2005	“A study of regrowth interface and material quality for a novel InP-based architecture” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren	J. of Cryst. Growth, 273, 26-37	Journal
384	2005	“Widely Tunable Negative-Chirp SG-DBR Laser/EA-Modulated Transmitter” J.W. Raring, E.J. Skogen, L.A. Johansson, M.N. Sysak, S.P. DenBaars, L.A. Coldren	J. of Lightwave Tech., 23 (1), 80-86	Journal
385	2005	“Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on laterally epitaxially overgrown a-plane GaN” A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra	Appl. Phys. Lett., 86 (3), 031901	Journal
386	2005	“Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques” S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck, S. Nakamura	Appl. Phys. Lett., Vol. 86 (2), 021914	Journal
387	2005	“Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on Free-standing m-plane GaN substrates” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra	Jpn. J. of Appl. Phys., 44 (5), L173-L175	Journal
388	2005	“Measurement of second order susceptibilities of GaN and AlGaN” N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park, J.Y. Han, R.J. Molnar	J. of Appl. Phys., 97 (5), 053512	Journal
389	2005	“Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy” B.A. Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura	Appl. Phys. Lett.., 86 (11), 111917	Journal
390	2005	“Ion implanted AlGaN–GaN HEMTs with nonalloyed ohmic contacts” H. Yu, L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, U. Mishra	IEEE Elec. Dev. Lett., 26 (5), 283-285	Journal
391	2005	“Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy” B.A Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura	J. of Elec. Mat., 34 (4), 357-360	Journal
392	2005	“Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN” G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck. S. Keller, S. Nakamura, S.P. Denbaars	Phys. Stat. Sol. A 202 (5), 846-849	Journal
393	2005	“Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering” T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S.P. Denbaars, U.K. Mishra	Phys. Stat. Sol A 202 (5), 837-840	Journal
394	2005	“Localized exciton dynamics in nonpolar (1120) In_xGa_1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu	Appl. Phys. Lett., 86 (15), 151918	Journal
395	2005	“Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide” C. Moe, H. Masui, M.C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J.S. Speck, S.P. DenBaars, C. Hussel, D. Emerson	Jpn. J. of Appl. Phys., 44 (17), L502-L504	Journal
396	2005	“Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates” S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U.K. Mishra, J.S. Speck, S.P. DenBaars	Jpn. J. of Appl. Phys., 44 (13), L405-L407	Journal
397	2005	“Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor” B. Schwenzer, C. Meier, O. Masala, R. Seshadri, S.P. DenBaars, U.K. Mishra	J. Mater. Chem., 15 (19), 1891-1895	Journal
398	2005	“Optical evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum structures” N. Akopian, G. Bahir, D. Gershoni, M.D. Craven, J.S. Speck, S.P. DenBaars	Appl. Phys. Lett., 86 (20), 202104	Journal
399	2005	“Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system” E.J. Skogen, L.A. Coldren, J.W. Raring, S.P. DenBaars	Appl. Phys. Lett., 86 (24), 241117	Journal
400	2005	Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors” H. Xing, S.P. DenBaars, U.K. Mishra	J. of Appl. Phys., 97 (11), 113703	Journal
401	2005	“Role of inclined threading dislocations in stress relaxation in mismatched layers” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, S.P. DenBaars, J.S. Speck	J. of Appl. Phys., 97 (10), 103534	Journal
402	2005	“Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging” D. Lubbert, T. Baumbach, P. Mikulík, P. Pernot, L. Helfen, R. Köhler, T.M. Katona, S. Keller, S.P. DenBaars	J. of Phys. D-Appl. Phys., 38 (10A), A50-A54	Journal
403	2005	“Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire” Ghosh, S; Misra, P; Grahn, HT; Imer, B; Nakamura, S; DenBaars, SP; Speck, JS	J. of Appl. Phys. 98 (2): Art. 026105	Journal
404	2005	“Microstructural and optical evaluation of nitride light-emitting diodes and II-VI distributed Bragg reflectors combined by direct wafer bonding” Murai A, Kruse C, Samonji K, McCarthy L, Speck JS, Mishra UK, DenBaars SP, Hommel D	Jpn. J. of Appl. Phys. 44 (30): L958-L960	Journal
405	2005	“Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates” Chakraborty A, Baker TJ, Haskell” BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK	Jpn. J. of Appl. Phys. 44 (30): L945-L947	Journal
406	2005	“Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction” David A, Meier C, Sharma R, Diana FS, DenBaars SP, Hu E, Nakamura S, Weisbuch C, Benisty H	Appl. Phys. Lett. 87 (10): 101107	Journal
407	2005	“Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN” Chu SW, Chan MC, Tai SP, Keller S, DenBaars SP, Sun CK	Opt. Lett. 30 (18): 2463-2465	Journal
408	2005	“Influence of the dynamic access resistance in the gm and fT linearity of AlGaN/GaN HEMTs” Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK	IEEE Trans. on Elec. Dev. 52 (10): 2117-2123	Journal
409	2005	“Quantum well intermixing and MOCVD regrowth for monolithic integration of 40 Gbit/s UTC type photodiodes with OW based components” Raring JW, Skogen EJ, Barton JS, Wang CS, DenBaars SP, Coldren LA	Elec. Lett. 41 (18): 1033-1034 SEP 1 2005	Journal
410	2005	“Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films” Keller S, Cantu P, Moe C, Wu Y, Keller S, Mishra UK, Speck JS, DenBaars SP	Jpn. J. of Appl. Phys. 44 (10): 7227-7233	Journal
411	2005	“Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate” Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP	Jpn. J. of Appl. Phys. 44 (43): L1329-L1332	Journal
412	2005	“GaN blue photonic crystal membrane nanocavities” Choi YS, Hennessy K, Sharma R, Haberer E, Gao Y, DenBaars SP, Nakamura S, Hu EL, Meier C	Appl. Phys. Lett. 87 (24): 243101	Journal
413	2005	“Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform” Raring JW, Skogen EJ, Masanovic ML, DenBaars SP, Coldren LA	Elec. Lett. 41 (24): 1345-1346	Journal
414	2005	“High-power AlGaN/GaN HEMTs for Ka-band applications” Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK	IEEE Elec. Dev. Lett. 26 (11): 781-783	Journal
415	2006	“AlGaN/GaN high electron mobility transistors with InGaN back-barriers” Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK	IEEE Elec. Dev. Lett. 27 (1): 13-15	Journal
416	2006	“Visible resonant modes in GaN-based photonic crystal membrane cavities” Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL	Appl Phys. Lett. 88 (3): 031111	Journal
417	2006	“Electron mobility in graded AlGaN alloys” Rajan S, DenBaars SP, Mishra UK, Xing HL, Jena D	Appl. Phys. Lett. 88 (4): Art. No. 042103	Journal
418	2006	“Design and demonstration of novel QW intermixing scheme for the integration of UTC-type photodiodes with QW-based components” Raring JW, Skogen EJ, Wang CS, Barton JS, Morrison GB, Demiguel S, DenBaars SP, Coldren LA	IEEE J. of Quant. Elect. 42 (2): 171-181	Journal
419	2006	“GaN light-emitting diodes with Archimedean lattice photonic crystals”David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (7): 073510	Journal
420	2006	“Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs” Palacios T, Chini A, Buttari D, Heikman S, Chakraborty A, Keller S, DenBaars SP, Mishra UK	IEEE Trans. on Elect. Dev. 53 (3): 562-565	Journal
421	2006	“Improved quality (1120) a-plane GaN with sidewall lateral epitaxial overgrowth” Imer BM, Wu F, DenBaars SP, Speck JS	Appl. Phys. Lett. 88 (6): Art. No. 061908	Journal
422	2006	“Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution” David A, Fujii T, Sharma R, McGroddy K, Nakamura S, DenBaars SP, Hu EL, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (6): 061124	Journal
423	2006	“Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation” Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, DenBaars SP, Nakamura S, Mishra UK	Jpn. J. of Appl. Phys. 45 (2A): 739-741	Journal
424	2006	“Etching of Ga-face and N-face GaN by inductively coupled plasma” Waki I, Iza M, Speck JS, DenBaars SP, Nakamura S	Jpn. J. of Appl. Phys. 45 (2A): 720-723	Journal
425	2006	“Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells” Onuma T, Keller S, DenBaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF	Appl. Phys. Lett. 88 (11): 111912	Journal
426	2006	“Photonic crystal laser lift-off GaN light-emitting diodes” David A, Fujii T, Moran B, Nakamura S, DenBaars SP, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (13): 133514	Journal
427	2006	“Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment” Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK	IEEE Elec. Dev. Lett. 27 (4): 214-216	Journal
428	2006	“Effect of the nucleation conditions on the polarity of AlN and GaN films grown on C-face 6H-SiC” Keller S, Fichrenbaum N, Wu F, Lee G, DenBaars SP, Speck JS, Mishra UK	Jpn. J. of Appl. Phys. 45 (11): L322-L325	Journal
429	2006	“Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy” Misra P, Behn U, Brandt O, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS	Appl. Phys. Lett. 88 (16): 161920	Journal
430	2006	“Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs” Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, Denbaars SP, Emerson D	J. of Elect. Mat. 35 (4): 750-753	Journal
431	2006	“Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances” Chakraborty A, Shen L, Masui H, DenBaars SP, Mishra UK	Appl. Phys. Lett. 88 (18): 181120	Journal
432	2006	“High performance deeply-recessed GaN power HEMTs without surface passivation” Shen L, Chakraborty A, McCarthy L, Fichtenbaum N, Keller S, DenBaars SP, Mishra UK	Elect. Lett. 42 (9): 555-556	Journal
433	2006	“Optimization of AlGaN/GaN HEMTs for high frequency operation” Palacios T, Dora Y, Chakraborty A, Sanabria C, Keller S, DenBaars SP, Mishra UK	Phys. Stat. Sol. A 203 (7): 1845-1850	Journal
434	2006	“High-performance E-mode AlGaN/GaN HEMTs” Palacios T, Suh CS, Chakraborty A, Keller S, DenBaars SP, Mishra UK	IEEE Elec. Dev. Lett. 27 (6): 428-430	Journal
435	2006	“Novel devices based on the combination of nitride and II-VI materials” Murai A, Kruse C, McCarthy L, Mishra UK, DenBaars SP, Hommel D	Phys. Stat. Sol. A 203 (7): 1771-1777	Journal
436	2006	“Crystal quality and growth evolution of aluminum nitride on silicon carbide” Moe CG, Wu Y, Keller S, Speck JS, DenBaars SP, Emerson D	Phys. Stat. Sol. A 203 (7): 1708-1711	Journal
437	2006	“AlGaN/AlN distributed Bragg reflectors for deep ultraviolet wavelengths” Moe CG, Wu Y, Piprek J, Keller S, Speck JS, DenBaars SP, Emerson D	Phys. Stat. Sol. A 203 (8): 1915-1919	Journal
438	2006	“Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction” Barabash RI, Ice GE, Liu W, Roder C, Figge S, Einfeldt S, Hommel D, Katona TM, Speck JS, DenBaars SP, Davis RF	Phys. Stat. Sol. B 243 (7): 1508-1513	Journal
439	2006	“Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire” Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS	Phys. Stat. Sol. B 243 (7): 1441-1445	Journal
440	2006	“Effect of ohmic contacts on buffer leakage of GaN transistors” Dora Y., Chakraborty A., Heikman S., McCarthy L., Keller S., DenBaars S.P., Mishra U.K.	IEEE Electron Device Letters Vol 27 No 7 529-531	Journal
441	2006	“Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask” Chakraborty A., Kim K.C., Wu F., Speck J.S., DenBaars S.P., Mishra U.K.	Applied Physics Letters 89 041903	Journal
442	2006	“Effect of threading dislocation density on Ni/n‑GaN Schottky diode I-V characteristics” Arehart A.R., Moran B., Speck J.S., Mishra U.K., DenBaars S.P., Ringel S.A.	Journal of Applied Physics 100 023709	Journal
443	2006	“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1‑xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, S. F. Chichibu	Applied Physics Letters 89 091906	Journal
444	2006	“Exciton dynamics in nonpolar (11 0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, et. al	Phys. Stat. Sol.C 3 No 6 2082-2086	Journal
445	2006	“X-Ray Microdiffraction Imaging Investigations of Wing Tilt In Epitazially Overgrown GaN” D. Lubbert, P. Mikulik, P. Pernot, S. Keller, et. al.	Phys. Stat. Sol.A 203 No 7 1733-1738	Journal
446	2006	“Improved Processing Technology for GaN-Capped deeply-Recessed GaN HEMTs Without Surface Passivation” L. Shen, L. McCarthy, T. Palacios, M.H. Wong, et. al.	IEEE Electron Device Letters Device Research Conference, 2006 64th 101-102	Conference Preceeding
447	2006	“Transient wavefunction analysis of a phononic bandgap nano-crystal” K.H. Lin, C.F. Chang, A.T. Tien, et al.	Conference on Lasers & Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS)	Conference Preceeding
448	2006	“High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates” Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol. 27 No.9 713-715	Conference Preceeding and Journal
449	2006	“50 nm AlGaN/GaN HEMT Technology for mm-wave Applications” T. Palacios, N. Fichtenbaum, S. Keller, S. DenBaars, U. Mishra	IEEE 64th Device Research Conference 99-100	Conference Preceeding
450	2006	“40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	IEEE Electron Device Letters Vol. 42 No. 16 942-943	Journal
451	2006	“Nitride-based High Electron Mobility Transistors with a GaN Spacer” T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S. DenBaars, U. Mishra, et. al.	Applied Physics Letters 89 073508	Journal
452	2006	“Effects of Phosphor Application Geometry on White Light-Emitting Diodes” H. Masui, S. Nakamura and S. P. DenBaars	Japanese Journal of Applied Physics Vol 45 No 34 L910-L912	Journal
453	2006	“First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes” H. Masui, T. Baker, R. Sharma, P. Pattison, M. Iza, H. Zhong, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 34 L904-L906	Journal
454	2006	“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu	Applied Physics Letters 89 091906	Journal
455	2006	“Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors” S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakrabort, T. Koyama, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, et. al	Nature Materials Vol. 5 810-816	Journal
456	2006	“Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells” S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra	Journal of Applied Physics 100 054314	Journal
457	2006	“Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding” A. Murai, D. Thompson, C.Y. Chen, U. Mishra, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 39 L1045-L1047	Journal
458	2006	“Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well” K.H. Lin, C.F. Chang, C.C. Pan, J.I. Chyi, S. Keller, U. Mishra, S. DenBaars, and C.K. Sun	Applied Physics Letters 89 143103	Journal
459	2006	“Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura	Journal of Crystal Growth 297 321-325	Journal
460	2006	“Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature” H. Masui, M. Schmidt, A. Chakraborty, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 10A 7661-7666	Journal
461	2006	“Single-Chip 40Gb/s Widely-TunableTransceiverswithIntegrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	Semiconductor Laser Conference, 2006. Conference Digest. IEEE 20th International Conference	Conference Preceeding
462	2006	“Cracking of III-nitride layers with strain gradients” A. E. Romanov, G. E. Beltz, P. Cantu, F. Wu, S. Keller, S. P. DenBaars, and J. S. Speck	Applied Physics Letters 89 161922	Journal
463	2006	“Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, and S. DenBaars	Applied Physics Letters 89 171116	Journal
464	2006	“Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition” B. Imer, F. Wu, M. Craven, J. Speck and S. DenBaars	Japanese J. of Appl. Phys Vol 45 No 1 8644-8647	Journal
465	2006	“Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN” A. Chakraborty, K.C. Kim, F. Wu, B. Haskell, S. Keller, J. Speck, S. Nakamura, S. DenBaars and U. Mishra	Japanese J. of Appl. Phys Vol 45 No 11 8659-8661	Journal
466	2006	“Realization of high hole concentrations in Mg doped semipolar (10 ) GaN” J. F. Kaeding, H. Asamizu, H. Sato, M. Iza, T. E. Mates, S. P. DenBaars, J. S. Speck, and S. Nakamura	Applied Physics Letters 89 202104	Journal
467	2006	“Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy” A. Armstrong, A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel	Applied Physics Letters 89 262116	Journal
468	2006	“Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (11 2)-plane GaN” H. Masui, T. Baker, M. Iza, H. Zhong, S. Nakamura, and S. DenBaars	Journal of Applied Physics 100 113109	Journal
469	2006	“Increased Power from deep ultraviolet LEDs via precursoe selection” C. Moe, T. Onuma, K. Vampola, N. Fellows, H. Masui, S. Newman, S. Keller, et. al.	Journal of Crystal Growth 298 710-713	Journal
470	2007	“Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures” B. Monemar, P. Paskov, J. Bergman, S. Keller, S. DenBaars, U. Mishra	Phys. Stat. Sol. A 204 No. 1 304-308	Journal
471	2007	“40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	Journal of Lightwave Technology Vol 25 No 1 239-248	Journal
472	2007	“Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy” U. Behn, P. Misra , H. Grahn, B. Imer, S. Nakamura , S. DenBaars , J. Speck	Phys Stat Sol A 204 No. 1 299-303	Journal
473	2007	“Growth of Heteroepitaxial ZnO Thin Films on GaN-Buffered Al2O3 (0001) Substrates by Low-Temperature Hydrothermal Synthesis at 90 °C” J. H. Kim, E.-M. Kim, D. Andeen, D. Thomson, S. P. DenBaars, F. Lange	Advanced Functional Materials Vol 17 No 3 463-471	Journal
474	2007	“Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InxGa1−xN∕GaN multiple and single quantum wells” S. Keller, S. P. DenBaars, et. al.	The American Physical Review B 75 035324	Journal
475	2007	“Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness” P. Pattison, A. David, R. Sharma, C. Weisbuch, S. DenBaars, and S. Nakamura	Applied Physics Letters 90 031111	Journal
476	2007	“Triangular pattern formation on silicon through self-organization of GaN nanoparticles” K. Prabhakaran, B. Schwenzer, S. DenBaars and U. Mishra	Applied Surface Science 253 4773-4776	Journal
477	2007	“High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes” J. Klamkin, A. Ramaswamy, L. Johansson, S. DenBaars, J. Bowers, et. al.	IEEE Photonics Technology Letters Vol. 19 No.3 149-151	Journal
478	2007	“Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films” A. Chakraborty, B. Haskell, F. Wu, S. Keller, S. DenBaars, S. Nakamura, J. Speck, and U. Mishra	Japanese Journal of Applied Physics Vol 46 No 2 542-546	Journal
479	2007	“High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates” A. Tyagi, H. Zhong, N. Fellows, M. Iza, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 7 L129-L131	Journal
480	2007	“High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes” M. Schmidt, K.C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. Speck	Japanese Journal of Applied Physics Vol 46 No 7L126-L128	Journal
481	2007	“Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes” M. Schmidt, K.C Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 9 L190-L191	Journal
482	2007	“Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures” N. Fichtenbaum, C. Neufeld, C. Schaake, Y. Wu, M.H. Wong, M. Grundmann, S. Keller, S. DenBaars, J. Speck, and U. Mishra	Japanese Journal of Applied Physics Vol 46 No 10 L230-L233	Journal
483	2007	“Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate” A. Chakraborty, C. Moe, Y. Wu, T. Mates, S. Keller, J. Speck, S. DenBaars, and U. Mishra	Journal of Applied Physics 101 053717	Journal
484	2007	“Defect-mediated surface morphology of nonpolar m-plane GaN” A. Hiri, B. Haskell, M. McLaurin, F. Wu, M. Schmidt, K. Kim, T. Baker, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 90 121119	Journal
485	2007	“Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, E. Letts, S. DenBaars, J. Speck, S. Nakamura, and S. Newman	Applied Physics Letters 90 122116	Journal
486	2007	“AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes” D. Feezell, M. Schmidt, R. Farrell, K. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 13 L284-L286	Journal
487	2007	“Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs” K. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. Speck, S. Nakamura, S. DenBaars	Phys. Stat. Sol (RRL) Vol 1 No 3 125-127	Letter
488	2007	“Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells” S. Keller, N. A. Fichtenbaum, C. Schaake, C. J. Neufeld, A. David, E. Matioli, Y. Wu, S. P. DenBaars , J. S. Speck, C. Weisbuch , U. K. Mishra	Phys. Stat. Sol B 224 No 6 1797-1801	Journal
489	2007	“MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures” N. A. Fichtenbaum , C. J. Neufeld , C. Schaake , Y. Wu , M. H. Wong , M. Grundmann , S. Keller, S. P. DenBaars , J. S. Speck , U. K. Mishra	Phys. Stat. Sol B 244 No. 6 1802-1805	Journal
490	2007	“Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques” S. F. Chichibu; A. Uedono; T. Onuma; B. A. Haskell; A. Chakraborty; T. Koyama; P. T. Fini, S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra; S. Nakamura; S. Yamaguchi; S. Kamiyama; H. Amano; I. Akasaki; J. Han; T. Sota	Philosophical Magazine Vol 87 No 13 2019-2039	Journal
491	2007	“Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers” D. F. Feezell, R. M. Farrell, M. C. Schmidt, H. Yamada, M. Ishida, S. P. DenBaars, D. A. Cohen, and S. Nakamura	Applied Physics Letters 90 181128	Journal
492	2007	“Growth and characterization of N-polar InGaN/GaN multiquantum wells” S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra	Applied Physics Letters 90 191908	Journal
493	2007	“Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells” S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars	Journal of Applied Physics 101 093515	Journal
494	2007	“Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates” A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 19 L444-L445	Journal
495	2007	“Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, F.Wu, J. Speck, and S. DenBaars	Journal of Crystal Growth 306 330-338	Journal
496	2007	“Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding” A. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura, S. P. DenBaars	Phys Stat Sol C 4 No 7 2756-2759	Journal
497	2007	“Deep-recessedGaNHEMTsusingselectiveetchtechnologyexhibitinghigh microwave performance without surface passivation” L. Shen, Y. Pei, L. McCarthy, C. Poblenz, et. al.	IEEE Electron Device Letters Microwave Symposium, IEEE/MTT-S International 623-626	Journal / Conference Proceeding
498	2007	“High power and high efficiency blue light emitting diode on freestanding semipolar (10 ) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, F. Wum R. Chung, M. Saito, K. Fujito, et. al.	Applied Physics Letters 90 233504	Journal
499	2007	“High power and high efficiency green light emitting diode on free-standing semipolar (11 2) bulk GaN substrate” H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. Chung, M. Saito, K. Fujito, et. al.	Phys. Stat. Sol (RRL) 1 No. 4 162-164	Journal
500	2007	“Progress in the growth of nonpolar gallium nitride” B. Haskell, S. Nakamura , S. DenBaars , J. Speck	Phys. Stat. Sol B 244 No 8, 2847-2858	Journal
501	2007	“Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents” H. Masui, H. Sato, H. Asamizu, M. C. Schmidt, N.N. Fellows, S. Nakamura, and S.P. DenBaars	Japanese Journal of Applied Physics Vol. 46 No. 25 L627- L629	Journal
502	2007	“Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes” D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Compound Semiconductor Integrated Circuit Symposium (CISC) IEEE 1-4	Conference Proceeding
503	2007	“Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	IEEE Electronics Letters Vol. 43 No. 15	Journal
504	2007	“Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” A. Chakraborty, M. McLaurin, B. A. Haskell, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, et. al.	Journal of Vacuum Science Technology B Vol. 25, Issue 4 1524-1528	Journal
505	2007	“Characterization and Discrimination of AlGaN- and GaN-related Deep Levels in AlGaN/GaN Heterostructures” A. Armstrong, A.Chakraborty, J. Speck, S. DenBaars, et al.	Physics of Semiconductors 28th International Conference American Institute of Physics	Conference Proceeding
506	2007	“Direct Evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes” H. Masui, N. Fellows, H. Sato, S. Nakamura, S. DenBaars	Allied Optics Vol. 46 No. 23 5974-5978	Journal
507	2007	“Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes” R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 32 L761-L763	Journal
508	2007	“Direct water photoelectrolysis with patterned n-GaN” I. Waki, D. Cohen, R. Lal, U. Mishra, S. DenBaars, and S. Nakamura	Applied Physics Letters 91 093519	Journal
509	2007	“Monolithically Integrated Coherent Receiver for Highly Linear Microwave Photonic Links” J. Klamkin, L. Johansson, A. Ramaswamy, J. Bowers, S. DenBaars, L. Coldren	The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS)	Conference Proceeding
510	2007	“Vertical defects in heavily Mg-doped Al0.69Ga0.31N” Y. Wu, C. G. Moe, S. Keller, S. P. DenBaars, J. S. Speck	Phys Stat. Sol A 204 No 10 3423-3428	Journal
511	2007	“Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance” Y. Pei, L. Shen, T. Palacios, N. Fichtenbaum, L. McCarthy, S. Keller, S. DenBaars, U. Mishra	Japanese Journal of Applied Physics Vol 46 No 35 L842-L844	Journal
512	2007	“Nonpolar gallium nitride laser diodes are the next new blue” D. Feezell, S. Nakamura, S. DenBaars, J. Speck	Laser Focus World 79-83	Magazine
513	2007	“Photoelectrochemical Properties of Nonpolar and Semipolar GaN” K. Fujii, Y. Iwaki, H. Masui, T. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. Speck, S. DenBaars, S.Nakamura , and K. Ohkawa	Japanese Journal of Applied Physics Vol.46 No. 10A 6573-6578	Journal
514	2007	“High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate” K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S.P. DenBaars, J.S. Speck, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 40 L960-L962	Journal
515	2007	“Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition” N. Fichtenbaum, C. Schaake, T. Mates, C. Cobb, S. Keller, S. DenBaars, and U. Mishra	Applied Physics Letters 91 172105	Journa;
516	2007	“Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition” S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speck, and U. Mishra	Journal of Applied Physics 102 083546	Journal
517	2007	“Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition” K. C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. DenBaars, J. Speck and K Fujito	Applied Physics Letters 91 181120	Journal
518	2007	“Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature” H. Masui, M. Schmidt, K.C. Kim, A. Chakraborty, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 46 No 11 7309-7310	Journal
519	2007	“Formation and reduction of pyramidal hillocks on m-plane {1100} GaN” A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito	Applied Physics Letters 91 191906	Journal
520	2007	“Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars	Journal of Material Research Vol 23 No 2 551-555	Journal
521	2007	“Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz” Y. Pei, R/ Chu, N. Fichtenbaum, Z. Chen, D. Brown, L. Shen, S. Keller, S. DenBaars, U. Mishra	Japanese Journal of Applied Physics Vol 46 No 45 L1087-L1089	Journal
522	2007	“Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes” H. Yamada, K. Iso, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 46 L1117-L1119	Journal
523	2007	“Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth” M.H Wong, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. McCarthy, S. Keller, S. DenBaars, J. Speck, U. Mishra	Applied Physics Letters 91 232103	Journal
524	2007	“Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts” Y. Pei, F. Recht, N. Fichtenbaum, S. Keller, S. DenBaars, U. Mishra	IEEE Electronics Letters Vol 43 No 25	Journal
525	2007	“Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells” Z. Chen, N. Fichtenbaum, D. Brown, S. Keller, U.K. Mishra, S.P. Denbaars, and S. Nakamura	Journal of Electronic Materials Vol 37 No 5 546-549	Journal

526	2007	“Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs” R. Cuerdo, Y. Pei, F. Recht, N. Fichtenbaum, S. Keller, S. P. Denbaars, F. Calle, U. K. Mishra	Physica Status Solidi C Vol 5 No 9 2994-2997	Journal

527	2008	“Impact of strain on free-exciton resonance energies in wurtzite AlN” H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, T. Hoshi, P. Cantu, R. Sharma, J. Kaeding, S. Keller, U. Mishra, K. Kosaka, K. Asai, S.Sumiya, T. Shibata, M. Tanaka, J. Speck, S. DenBaars, S. Nakamura, T. Koyama, T. Onuma, and S. Chichibu	Journal of Applied Physics 102 123707	Journal

528	2008	“Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition” N.A. Fichtenbaum, T.E. Mates, S. Keller, S.P. DenBaars and U.K. Mishra	Journal of Crystal Growth 310 1124-1131	Journal

529	2008	“Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes” H. Masui, S. Nakamura, S. DenBaars	Applied Optics Vol 47 No 1	Journal


530	2008	“Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry” N. Fellows, H. Masui, H. Sato, H. Asamizu, M. Iza, H. Zhong, S. Nakamura, S. DenBaars	Phys Stat Sol C 5 No 6 2216-2218	Journal

531	2008	“Non-polar-oriented InGaN light-emitting diodes for liquid-crystal display“ H. Masui, H. Yamada, K. Iso, J. Speck, S. Nakamura, S. DenBaars	Journal of the Society for Information Display 16/4 1-8	Journal

532	2008	“Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy” S. Nakamura, J. S. Speck, and S. P. DenBaars et. al.	Journal of Applied Physics 103 014305	Journal
533	2008	“Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates” K. Fujito, J. Speck , S. DenBaars , S. Nakamura, et. al.	Phys. Stat. Sol (RRL) 2 No. 2 89-91	Journal

534	2008	“High Power and High Efficency Semipolar InGaN Light Emitting Diodes” H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Journal of Light and Vis. Env. Vol 32 No 2 107-110	Journal

535	2008	“Electroluminescence efficiency of $(1\,0\,\bar{1}\,0)$ -oriented InGaN-based light-emitting diodes at low temperature” H. Masui , H. Kroemer, M. Schmidt , K.C. Kim, N. Fellows , S. Nakamura and S. DenBaars	Journal of Physics D: Applied Physics 41 082001 1- 5	Journal

536	2008	“Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition” S. Keller, C. S. Suh, Z. Chen, R. Chu, S. Rajan, N. A. Fichtenbaum, M. Furukawa, S. P. DenBaars, J. S. Speck, and U. K. Mishra	Journal of Applied Physics 103 033708	Journal

537	2008	“Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, M. Schmidt, B. Haskell, S. Rajan, B. Zhong, K.C. Kim, F. Wu, T. Mates, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars	Phys Stat Sol A 205 No 7 1705-1712	Journal

538	2008	“ZnO cone-shaped blue light emitting diodes” A. Murai, D. B. Thompson, U. K. Mishra, S. Nakamura, and S. P. DenBaars	Proceedings of SPIE Synposium Vol 6895 6859N-1-6859N-9	Conference Proceedings/ Invited Paper

539	2008	“Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis” S. Keller, S. P. DenBaars, J. Speck, et. al.	Physical Review B 77 094102	Journal
540	2008	“Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (1010) and (1011) planes” H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. DenBaars	Applied Physics Letters 92 091105	Journal

541	2008	“Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope” H. Masui , H. Yamada, K. Iso, H. Hirasawa, N. Fellows, J. Speck, S. Nakamura, S. DenBaars	Phys Stat Sol A 205 1203-1206	Journal

542	2008	“Red-emitting SrIn2O4 : Eu3+ phosphor powders for applications in solid state white lamps” C.E. Rodríguez-García, N. Perea-López, G.A. Hirata, and S.P. DenBaars	Journal of Physics D: Applied Physics 41 092005	Journal

543	2008	“GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth” A. David, B. Moran, K. McGroddy, E. Matioli, E. Hu, S. DenBaars, S. Nakamura, and C. Weisbuch	Applied Physics Letters 92 113514	Journal

544	2008	“InGaN/GaN laser diodes on semipolar (10 ) bulk GaN substrates” A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Phys Stat Sol C 5 No 6 2108-2110	Journal

545	2008	“Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs” R. Chu, L. Shen, Zhen Chen, S. Keller, S. DenBaars, U. Mishra et. al	IEEE Electron Device Letters Vol 29 No 4 303-305	Journal

546	2008	“Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors” U. Mishra, S. Keller, S. DenBaars et. al.	IEEE Electon Device Letters Vol 29 No 4 300-302	Journal

547	2008	“Output Saturation and Linearity of Waveguide Unitraveling-Carrier Photodiodes” J. Klamkin, Y. Chang, A. Ramaswamy, L. Johansson, J. Bowers, S. DenBaars, L. Coldren	IEEE Journal of Quantum Electronics Vol 44 No 4 354-359	Journal

548	2008	“Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates” T. Ive , T. Ben-Yaacov , H. Asamizu , C. G. Van de Walle , U. Mishra , S. P. DenBaars J. S. Speck	Phys Stat Sol C 5 No 6 1733-1735	Journal

549	2008	“Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy” T. Ive, T. Ben-Yaacov, C.G. Van de Walle, U.K. Mishra, S.P. DenBaars and J.S. Speck	Journal of Crystal Growth 310 3407-3412	Journal

550	2008	“Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes” H. Masui, T. Ive, M. Schmidt, N. Fellows, H. Sato, H. Asamizu, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 47 No 4 2112-2118	Journal

551	2008	Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, et al.	Journal of Applied Physics 103 089901	Journal

552	2008	“Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films” A. Arehart, A. Corrion, C. Poblenz, J. Speck, U. Mishra, S. DenBaars, S. Ringel	Phys Stat Sol C 5 No 6 1750-1752	Journal

553	2008	“Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier” M.H. Wong, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. Brown, S. Keller, S. DenBaars, J. Speck, and U. Mishra	IEEE Electron Device Letters Device Research Conference 201-202	Journal

554	2008	“Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes” H. Masui, N. Fellows, S. Nakamura, and S. DenBaars	Semiconductor Science and Technology 23 072001	Journal

555	2008	“Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding” A. Murai, D. Thompson, H. Hirasawa, N. Fellows, S. Brinkley, C.J. Won, M. Iza, U. Mishra, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 47 No 5 3522-3523	Journal

556	2008	“Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching” D. Thompson, A. Murai, M. Iza, S. Brinkley, S. DenBaars, U. Mishra, and S. Nakamura	Japanese Journal of Applied Physics Vol 47 No 5 3447-3449	Journal

557	2008	“A novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN” N. Perea-Lopez , J. Tao , J.B. Talbot , J. McKittrick , G.A. Hirata and S.P. DenBaars	Journal of Physics D: Applied Physics 41 122001	Journal

558	2008	“Microdiffraction imaging of dislocation densities in microstructured samples” D. Lübbert, T. Baumbach, V. Holý, P. Mikulík, L. Helfen, P. Pernot, M. Elyyan, S. Keller, T. M. Katona , S. P. DenBaars and J. S. Speck	Exploring the Frontiers of Physics 82 56002	Journal

559	2008	“Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates” T. Ive , T. Ben-Yaacov, A. Murai, H. Asamizu, C. G. Van de Walle, U. Mishra, S. P. DenBaars, J. S. Speck	Phys Stat Sol C No 9 3091-3094	Journal

560	2008	“Optical properties of yellow light-emitting diodes grown on semipolar (1122) bulk GaN substrates” H. Sato, R. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Applied Physics Letters 92 221110	Journal

561	2008	“M -plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c -plane patterned templates” C. Schaake , N. Fichtenbaum , C. Neufeld, S. Keller , S. DenBaars , J. Speck , U. Mishra	Phys Stat Sol C 5 No 9 2963-2965	Journal

562	2008	“Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors” Nidhi, S. Rajan, S. Keller, F. Wu, S. DenBaars, J. Speck, and U. Mishra	Journal of Applied Physics 103 124508	Journal

563	2008	“Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes” H. Yamada, K. Iso, H. Masui, M. Saito, K. Fujito, S. DenBaars, S. Nakamura	Journal of Crystal Growth 310 4968-4971	Journal

564	2008	“Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization” H. Masui, S. Nakamura, and S. DenBaars	Semiconductor Science and Technology 23 085018	Journal

565	2008	“Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers” S. Nicholes, J. Raring, E. Norberg, C. Wang, M. Dummer, S. DenBaars, L. Coldren	IEEE Photonics Technology Letters Vol 20 No 14 1267-1269	Journal
566	2008	“Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition” D. Brown, S. Keller, F. Wu, J. Speck, S. DenBaars, and U. Mishra	Journal of Applied Physics 104 024301	Journal

567	2008	“Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes” H. Masui , J. Sonoda , N. Pfaff , I. Koslow , S. Nakamura, and S. DenBaars	Journal of Physics D: Applied Physics 41 165105 1-6	Journal

568	2008	“Electron mobility in N-polar GaN/AlGaN/GaN heterostructures” D Brown, S. Rajan, S. Keller, Y.H. Hsieh, S. DenBaars, and U. Mishra	Applied Physics Letters 93 042104	Journal

569	2008	“Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates” H. Asamizu, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 1 091102	Journal

570	2008	“A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes” W.B. Im, Y.I Kim, N. Fellows, H. Masui, G. Hirata, S. DenBaars, and R. Seshadri	Applied Physics Letters 93 091905	Journal

571	2008	“Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures” A. Tyagi, Y.D. Lin, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 1 091103	Journal

572	2008	“Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes” K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu	Applied Physics Letters 93 103502	Journal

573	2008	“Dichromatic color tuning with InGaN-based light-emitting diodes” N. Fellows, H. Sato, Y. D. Lin R. Chung, S. DenBaars, S. Nakamura	Applied Physics Journal 93 121112	Journal

574	2008	“N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier” M.H. Wong, Y. Pei, R. Chu,S. Rajan, B. Swenson, D. Brown, S. Keller, S. DenBaars, J. Speck, U. Mishra	IEEE Electron Device Letters Vol 29 No 10 1101-1104	Journal

575	2008	“Time-Resolved Optical Studies of InGaN LED Structures Grown on Semipolar and Nonpolar Bulk GaN Substrates” A. Tyagi, M. Schmidt, Z. Jia, J. Speck, S. DenBaars, S. Nakamura, et. al.	Conference on Quantum Electronics and Laser Science 1-2	Conference Proceeding

576	2008	“High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap” C. Neufeld, N. Toledo, S. Cruz, M. Iza, S. DenBaars, and U. Mishra	Applied Physics Letters 93 143502	Journal

577	2008	“Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth” K.C. Kim, M. Schmidt, F. Wu, M. McLaurin, A. Hirai, S. Nakamura, S. DenBaars, and J. Speck	Applied Physics Letters 93 142108	Journal

578	2008	“Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition” N. Fellows, H. Sato, H. Masui, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 47 No 10 7854-7856	7854-7856

579	2008	“V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation” R. Chu, Z. Chen, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol 29 No 11 1184-1186	Journal

580	2008	“Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure” H. Masui, H. Yamada, K. Iso, S. Nakamura and S. DenBaars	Journal of Physics D: Applied Physics 41 225104	Journal

581	2008	“Pressure-assisted combustion synthesis of red-emitting SrIn2O4: Eu3+ phosphor powders for applications in solid state white lamps” C.E. Rodriguez, Perea-Lopez, S. DenBaars	Journal of Ceramic Processing Research Vol 9 No 5 463-465	Journal

582	2008	“Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN” A. Tamboli, M. Schmidt, S. Rajan, J. Speck, U. Mishra, S. DenBaars, E. Hu	Journal of the Electrochemical Society 156 (1) H47-H51	Journal

583	2008	“Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures” S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra	Journal of Applied Physics 104 093510	Journal

584	2008	“Plane Dependent Growth of GaN in Supercritical Basic Ammonia” M. Saito, D. Kamber, T. Baker, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 1 121103	Journal

585	2008	“Energy Efficent LEDs For Sustainable Solid-State Lighting” S. DenBaars	Engineering Insights Conference UCSB 2008	Journal

586	2009	“Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy” T. Ive , T. Ben-Yaacov, C. Van de Walle, U. Mishra, S. Denbaars, J. Speck	Phys Status Solidi C 6, No 6 1460-1463	Journal

587	2009	“Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates” K. Vampola , N. Fellows , H. Masui , S. Brinkley, M. Furukawa, R. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S. DenBaars, S. Nakamura	Phys Status Solidi A, 206 No 2 200-202	Journal

588	2009	“Recent progress in nonpolar LEDs as polarized light emitters” H. Masui, M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. Speck , S. Nakamura, S. DenBaars	Phys Status Solidi A 206 No 2 203-205	Conference Proceeding

589	2009	“Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors” T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. Speck, S. DenBaars, U. Mishra	The Japan Society of Applied Physics: Applied Physics Express 2 011001	Journal

590	2009	“Highly Linear Integrated Coherent Receivers for Microwave Photonic Links” J. Klamkin, L. Johansson, J. Bowers, S. DenBaars, et. al.	Optical Society of America : Optical Fiber Communication 1-3	Journal/ Conference Proceeding

591	2009	“Optical and thermal properties of In12Ga88N/GaN solar cells” C. Neufeld, S. Cruz, N. Toledo, M.Iza, S. DenBaars, U. Mishra	IEEE Electron Device Letters 34th IEEE Photovaltaic Specialists Conference 001533-001535	Journal/ Conference Proceeding

592	2009	“La1-x-0.025Ce0.025Sr2+xAl1-xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting” W. B. Im, N. Fellows, S. DenBaars, R. Seshardi	Journal of Materials Chemistry Vol 19 No 9 1325-1330	Journal

593	2009	“Evaluation of GaN substrates grown in supercritical basic ammonia” M. Saito, H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. Kamber, T. Hashimoto, S. DenBaars, J. Speck, and S. Nakamura	Applied Physics Letters 94 052109	Journal

594	2009	“Measurement of electron overflow in 450 nm InGaN light-emitting diode structures” K. Vampola, M. Iza, S. Keller, S. DenBaars, S. Nakamura	Applied Physics Letters 94 061116	Journal

595	2009	“Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides” H. Asamizu, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 2 021002	Journal

596	2009	“Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates” G. Garrett, H. Shen, M. Wraback, A. Tyagi, M. Schmidt, J. Speck, S. DenBaars, S. Nakamaura	Phys Status Solidi C 6 No S2 S800-S803	Journal

597	2009	“The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs” R. Cuerdo, Y. Pei, Z. Chen, S. Keller, S. P. DenBaars, F. Calle, U. K. Mishra	IEEE Electron Device Letters Vol 30 No 3 209-212	Journal

598	2009	“Prospects for LED lighting” S. Pimputkar, J. Speck, S. DenBaars, S. Nakamura	Nature Photonics Vol 3 180-182	Magazine

599	2009	“Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates” Y. Pei, Z. Chen, D. Brown, S. Keller, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol 30 No 4 328-330	Journal

600	2009	“Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation” A. Uedono, S. Ishibashi, S. Keller, C. Moe P. Cantu, T. M. Katona, D. S. Kamber, et. al.	Journal of Applied Physics 105 054501	Journal
601	2009	“Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning” H. Zhong, A.Tyagi, N. Pfaff, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics 48 030201	Journal

602	2009	“Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer” Z. Chen, Y. Pei, S. Newman, R. Chu, D. Brown, R. Chung, S. Keller, S. P. Denbaars, S. Nakamura, U. Mishra	Applied Physics Letters 94 112108	Journal

603	2009	“Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution” D. Thompson, J. Richardson, S. DenBaars, and F. Lange	The Japan Society of Applied Physics: Applied Physics Express 2 042101	Journal

604	2009	“Electron transport in nitrogen-polar high electron mobility transistors” D. Brown , S. Rajan, S. Keller, Y. Hsieh, S. DenBaars, U. Mishra	Phys Status Solidi C 6 No S2 S960-S963	Journal
605	2009	“Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy” S. Newman, D. Kamber, T. Baker, Y. Wu, F. Wu, Z. Chen, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 94 121906	Journal

606	2009	“Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures” H. Masui, S. Cruz, S. Nakamura, S. DenBaars	Journal of Electronic Materials Vol 38 No 6 756-760	Journal

607	2009	“Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition” D. Brown, R. Chu, S. Keller, S. DenBaars, and U. Mishra	Applied Physics Letters 94 153506	Journal

608	2009	“Photoelectrochemical etching of p-type GaN heterostructures” A. Tamboli, A. Hirai, S. Nakamura, S. DenBaars, E. Hu	Applied Physics Letters 94 151113	Journal

609	2009	“Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates” T. Ben-Yaacov, T. Ivw, C. Van De Walle, U. Mishra, J. Speck, S. DenBaars	Phys Status Solidi C 6 No 6 1464-1467	Journal

610	2009	“LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting” W. Im, N. Fellows, S. DenBaars, R. Seshadri, Y. Kim	Chemistry of Materials Vol 21 No 13 2957-2966	Journal

611	2009	“RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate” S. Kolluri, Y. Pei, S. Keller, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol 30 No 6 584-586	Journal

612	2009	“AlGaN/GaN HEMT With a Transparent Gate Electrode” Y. Pei, K. Vampola, Z. Chen, R. Chu, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol 30 No 5 439-441	Journal

613	2009	“Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect” Z. Chen, Y. Pei, S. Newman, D. Brown, R. Chung, S. Keller, S. P. Denbaars, S. Nakamura, U. Mishra	Applied Physics Letters 94 171117	Journal

614	2009	“Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes” D. Feezell, M. Schmidt, S. DenBaars, S. Nakamura	MRS Bulliten Vol 34 318-323	Journal

615	2009	“Nonpolar and Semipolar Group III Nitride-Based Materials” J. Speck, S. Chichibu, et. al.	MRS Bulliten Vol 34 304-312	Journal

616	2009	“High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications” A. Navarro, C. Rivera, J. Pereiro, E. Munoz, B. Imer, S. P. DenBaars,J. S. Speck	Applied Physics Letters 94 213512	Journal

617	2009	“Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition” S. Cruz, S. Keller, T. Mates, U. Mishra, S. DenBaars	Journal of Crystal Growth 311 3817-3823	Journal

618	2009	“Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 10) and semipolar (1122) orientations” H. Masui, H. Asamizu, T. Melo, H. Yamada, K. Iso, S. Cruz, S. Nakamura, S. DenBaars	Journal of Physics D: Applied Physics 42 135106	Journal

619	2009	“Si Delta-Doped m-plane AlGaN/GaN Heterojunction Field-Effect Transistors” T. Fujiwara, S. Keller, M. Higashiwaki, J. Speck, S. DenBaars, U. Mishra	The Japan Society of Applied Physics: Applied Physics Express 2 061003	Journal

620	2009	“Determination of polarization field in a semipolar (11 2) InGa/GaN single quantum well using Franz–Keldysh oscillations in electroreflectance” H. Shen, M. Wraback, H. Zhong, A. Tyagi, S. P. DenBaars, S. Nakamura, and J. S. Speck	Applied Physics Letters 94 241906	Journal

621	2009	“Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures” H. Masui, H. Asamizu, A.Tyagi, N. Fellows, S. Nakamura, S. DenBaars	The Japan Society of Applied Physics: Applied Physics Express 2 071002	Journal

622	2009	“Observation of whispering gallery modes in nonpolar m-plane GaN microdisks” A. Tamboli, M. Schmidt, A. Hirai, S. DenBaars, and E. Hu	Applied Physics Letters 94 251116	Journal

623	2009	“Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding” K. Kelchner, M. Hardy, R. Ferrell, D. Haeger, F. Wu, et. al.	The Japan Society of Applied Physics: Applied Physics Express 2 071003	Journal

624	2009	“Characterization of blue-green m-plane InGaN light emitting diodes” Y.D.Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 94 261108	Journal

625	2009	“Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition” H. Masui, S. Keller, N. Fellows, N. Fichtenbaum, M. Furukawa, S. Nakamura, U. Mishra, S. DenBaars	Japanese Journal of Applied Physics 48 071003	Journal

626	2009	“Unabmiguous evidence of the existence of polarization fiel crossover in a semipolar InGaN/GaN single quantum well” H. Shen, M. Wraback, H. Zhong, A. Tyagi, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 95 033503	Journal

627	2009	“Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate” Y.D. Lin, M. Hardy, K. Kelchner, D. Haeger et. al.	The Japan Society of Applied Physics: Applied Physics Express 2 082102	Journal

628	2009	“Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications” A. Tamboli, M. Schmidt, A. Hirai, S. DenBaars, E. Hu	Journal of the Electrochemical SocietyVol 156 No 10 H767-H771	Journal

629	2009	“MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications” R. Chu, Z. Chen, Y. Pei, S. Newman, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol 30 No 9 910-912	Journal

630	2009	“m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers” Y-D. Lin, M. Hardy, H. Ohta, J. Speck, S. DenBaars et. al.	Applied Physics Letters 95 081110	Journal

631	2009	“Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization” H. Masui, J. Sonoda, A. Chakraborty, H. Yamada, K. Iso, N. Pfaff, I. Koslow, S. Nakamura, S. DenBaars	Japanese Journal of Applied Physics 48 098003	Journal

632	2009	“Uni-Traveling-Carrier Balanced Photodiode with Tunable MMI Couplet for Optimization of Source Laser RIN Suppression” J. Klamkin, A. Ramaswamy, L. Johansson, N. Nunoya, J. Bowers, S. DenBaars, L. Coldren	International Topical Meeting on Microwave Photonics 1-4	Invited Paper

633	2009	“Probing local structure in the yellow phosphor LaSr2AlO5 : Ce3+, by the maximum entropy method and pair distribution function analysis” W.B. Im, K. Page, S. DenBaars, R. Seshadri	Journal of Materials Chemistry Vol 19 No 46 8761-8766	Journal

634	2009	“Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films” H. Masui, T. Melo, J. Sonoda, C. Weisbuch, S. Nakamura, S. DenBaars	Journal of Electronic Materials Vol 39 No 1 15-20	Journal

635	2009	“GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation” A. Sztein, H. Ohta, J. Sonoda, A Ramu, J. Bowers, S. DenBaars, S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 2 111003	Journal

636	2009	“Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges” H. Masui, S. Nakamura, S. DenBaars, U. Mishra	IEEE Transactions on Electron devices Vol 57 No 1 88-100	Invited Paper

637	2009	“Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1−xSr2+xAlO5−xFx solid solutions for solid state white lighting” W.B. Im, Y. Fourre, S. Brinkley, J. Sonoda, S. Nakamura, S. DenBaars, R. Seshadri	Optics Express Vol 17 No 25 22673-22679	Journal

638	2009	“Spontaneous formation of {1 01} InGaN quantum wells on a (11 2) GaN template and their electroluminescence characteristics” H. Masui , D. Kamber, D. Kamber, S. Binkley, F. Wu, T. Baker, H. Zhong, M. Iza, J. Speck, S. Nakamura and S DenBaars	Semiconductor Science and Technology Vol 25 015003 1-8	Journal

639	2009	“m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching” M. Hardy, K. Kelchner, Y.D. Lin, P.S. Hsu, H. Ohta, K. Fujito, J. Speck, S. Nakamura, S. DenBaars	The Japan Society of Applied Physics: Applied Physics Express2 121004	Journal

640	2009	“Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates” T. Ben-Yaacov, T. Ive, C. Van De Walle, U. Mishra, J. Speck, S. DenBaars	Journal of Electronic Materials Vol 39 No 5 608-611	Journal

641	2009	“Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11 2) GaN free standing substrates” A. Tyagi, F. Wu, E. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 95 251905	Journal

642	2009	“AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm” A. Tyagi, R. Ferrell, K. Kelchner, C. Y. Huang, P. S. Hsu, D. Haeger, M. Hardy, C. Holder, K. Fujito, D. Cohen, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 3 011002	Journal

643	2010	“Propagation of Spontaneous Emission in Birefringent m-Axis Oriented Semipolar (1122) (Al,In,Ga)N Waveguide Structures” C.Y. Huang, A. Tyagi, Y.D. Lin, M. Hardy, et. al.	Japanese Journal of Applied Physics 49 010207	Journal

644	2010	“Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy” E. Young, F. Wu, A. Romanov, A. Tyagi, C. Gallinat, S. DenBaars, S. Nakamura, J. Speck	The Japan Society of Applied Physics: Applied Physics Express 3 011004	Journal

645	2010	“Low resistance Ti/Al/Au ohmic backside contacts to nonpolar m-plane n-GaN” Y.A. Chen, D. Cohen, S. DenBaars	IEEE Electronics Letters Vol 46 No 2 173-174	Journal

646	2010	“Optical waveguide simulations for the optimization of InGaN-based green laser diodes” C. Y. Huang, Y. D. Lin, A Tyagi, A. Chakraborty, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Journal of Applied Physics 107 023101	Journal

647	2010	“Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition” D. Brown, S. Keller, T. Mates, J. Speck, S. DenBaars, U. Mishra	Journal of Applied Physics 107 033509	Journal

648	2010	Technique to evaluate the diode ideality factor of light-emitting diodes H. Masui, S. Nakamura, S. DenBaars	Applied Physics Letters 96 073509	Journal

649	2010	“Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10 ) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy” T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. Kaeding, M. Iza, S. DenBaars, S. Nakamura, F. Chichibu	Applied Physics Letters 96 091913	Journal

650	2010	“High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes” J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Feezell, R. Craig, J. Speck, S. DenBars, S. Nakamura	Proceedings of SPIE Vol 7602 760218	Conference Proceeding

651	2010	“Sr2.975−xBaxCe0.025AlO4F: a Highly Efficient Green-Emitting Oxyfluoride Phosphor for Solid State White Lighting” W.B. Im, S. Brinkley, J. Hu, A. Mikhailovsky, S. DenBaars, R. Seshadri	Chemistry of Materials Vol 22 No 9 2842-2849	Journal

652	2010	“State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes” J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y. C. Chang, D. Feezell, R. Craig, J. Speck, S. DenBaars, S. Nakamura	Proceedings of SPIE Vol 7686 76860L	Conference Proceeding

653	2010	“InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates” P.S. Hsu, K. Kelchner, A. Tyagi, R. Ferrell, D. Haeger, K. Fujito, H. Ohta, S. DenBaars, J. Speck, S. Nakamura	The Japan Society of Applied Physics: Applied Physics Express 3 052702	Journal

654	2010	“Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates” R. Farrell, D. Haeger, X. Chen, C. Gallinat, R. Davis, M. Cornish, K. Fujito, S. Keller, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 96 231907	Journal

655	2010	“Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN” F. Wu, Y.D. Lin, A. Chakraborty, H. Otha, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 96 231912	Journal

656	2010	“Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R. Farrell, P. S. Hsu, D. Hager, K. Fujito, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letters 96 231113	Journal

657	2010	“Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells” V. Liuolia, S. Marcinkevicius, Y.D. Lin, H. Ohta, S. DenBaars, S. Nakamura	Journal of Applied Physics 108 023101	Journal

658	2010	“Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes” C.C. Pan, I. Koslow, J. Sonoda, H. Ohta, J.S. Ha, S. Nakamura, S. DenBaars	Japanese Journal of Applies Physics 49 080210	Journal

659	2010	“High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate” I.L. Koslow, J. Sonoda, R.B. Chung, C. Pan, S. Brinkley, H. Ohta, S. Nakamura, S. DenBaars	Japanese Journal of Applies Physics 49 080203	Journal

660	2010	”N-Polar InAlN/AlN/GaN MIS-HEMTs” D.F. Brown, Nidihi, F. Wu, S. Keller, S. DenBaars, U.K. Mishra	IEEE Electronic Device Letters Vol 31 No 8 800-802	Journal

661	2010	“High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes” Y.D. Lin, S. Yamamoto, C.Y. Huang, C. Hsiung, F. Wu, K. Fujito, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Express 3 082001	Journal

662 (B-1)*	2010	“Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes” K. Kelchner, R. Farrell, Y. Lin, P. Hsu, M. Hardy, F. Wu, D. Cohen, H. Ohta, J. Speck, S. Nakamura, S. DenBaars	Applied Physics Express 3 092103	Journal

663	2010	“Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” S. Kolluri, S. Keller, D. Brown, G. Gupta, U.K.. Mishra, S. DenBaars, S. Rajan	Journal of Applied Physics 108 074502	Journal

664	2010	“Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition” S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. DenBaars, J. Speck, U.K. Mishra	Applied Physics Letters 97 142109	Journal

665	2010	”Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy” V. Liuolia, A. Pinos, S. Marcinkevicius, Y.D. Lin, H. Ohta, S. DenBaars, S. Nakamura	Applied Physics Letters 97 151106	Jounral

666	2010	“Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure” D.N. Nath, S. Keller. E. Hsieh, S. DenBaars, U.K. Mishra, S. Rajan	Applied Physics Letters 97 162106	Journal

667	2010	“Future of group-III nitride semiconductor green laser diodes” H. Ohta, S. DenBaars, S. Nakamura	Journal of the optical society of America B-Optical Physics Vol 27 No 11 B45-B49	Journal

668	2010	“Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” S. Kolluri, S. Keller, D. Brown, G. Gupta, S. Rajan, S. DenBaars, U. Mishra	Journal of Applied Physics 108 074502	Journal

669	2010	“Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes” R.M. Farrell, D.A. Haegar, X. Chen, M. Iza, A. Hirai	Journal of Crystal Growth Vol 313 No 1 1-7	Journal

670	2011	”A facile route to patterned epitaxial ZnO nanostructures by soft lithography” J.J. Richardson, D. Estrada, S. DenBaars, C.J. Hawker, L.M. Campos	Journal of Materials Chemistry Vol 21 No 38 14417-14419	Journal

671	2011	“Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes” S.E. Brinkley, Y.D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. Speck, S. Nakamura, S. DenBaars.	Applied Physics Letters 98 011110	Journal

672	2011	“High internal and external quantum efficiency InGaN/GaN solar cells” E. Matioli, C. Neufeld, M. Iza, S.C. Cruz, A.A. Al-Heji, X. Chen, R.M. Farrell, S. Keller, S. DenBaars, S. Nakamura, J. Speck, C. Weisbuch	Applied Physics Letters 98 021102	Journal

673	2011	“Misfit dislocation formation at heterointerfaces in (Al, In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates” F. Wu, A. Tyagi, E.C. Young, A.E. Romanov, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Journal of Applied Physics 109 033505	Journal

674	2011	“RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation” S. Kolluri, D.F. Brown, M.H. Wong, S. Dasgupta, S. Keller, S. DenBaars, U.K. Mishra	IEEE Electron Device Letters Vol 32 No 2 134-136	Journal

675	2011	“Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications” C.L. Hsiung, Y.D. Lin, H. Ohta, S. Denbaars, S. Nakamura	Japanese Journal of Applied Physics 50 030208	Journal

676	2011	“Droop improvement in high current range on PSS-LEDs” S. Tanaka, Y. Zhao, I. Koslow, C.C. Pan, H.T. Chen, J. Sonoda, S. DenBaars, S. Nakamura	Electronic Letters Vol 47 No 5 335-U66	Journal

677	2011	“Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires” C. Pfuller, O. Brandt, T. Flissikowski, H.T. Grahn, T. Ive, J. Speck, S. DenBaars	Applied Physics Letters 98 113113	Journal

678	2011	“Electroluminescence enhancement of (1122) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates” S.Y. Bae, D.S. Lee, B.H. Kong, H.K. Cho, J.F. Kaeding, S. Nakamura, S. DenBaars, J. Speck	Current Applied Physics Vol 11 No 3 954-958	Journal

679	2011	“N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate” S. Kolluri, S. Keller, S. DenBaars, U.K. Mishra	IEEE Electronic Device Letters Vol 32 No 5 635-637	Journal

680	2011	“Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (1011) GaN substrate” T.J. Prosa, P.H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 98 191903	Journal

681	2011	“Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy” A.E. Romanov, E.C. Young, F. Wu, A. Tyagi, C.S. Gallinat, S. Nakamura, S. DenBaars, J. Speck	Journal of Applied Physics 109 103522	Journal

682	2011	“High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm” R.M. Farrell, C.J. Neufeld, S.C. Cruz, J.R. Lang, M. Iza, S. Keller, S. Nakamura, S. DenBaars, U.K. Mishra, J. Speck	Applied Physics Letters 98 201107	Journal

683	2011	“Efficient and Color-Tunable Oxyfluoride Solid Solution Phosphors for Solid-State White Lighting” W. Bin Im, N. George, J. Kurzman, S. Brinkley, A. Mikhailovsky, J. Hu, B.F. Chmelka, S. DenBaars, R. Seshadri	Advamced Materials Vol 23 No 20 2300+	Journal

684	2011	“Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition” R.B. Chung, F. Wu, R. Shivaraman, S. Keller, S. DenBaars, J. Speck, S. Nakamura	Journal of Crustal Growth Vol 324 No 1 163-167	Journal

685	2011	“Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar, (10(11)(--)) GaN substrate (vol 98, 191903, 2011)” T.J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S.P. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 98 239901	Journal

686	2011	“Effect of doping and polarization on carrier collection in InGaN quantum well solar cells” C.J. Neufeld, S.C. Cruz, R.M. Farrell, M. Iza, J.R. Lang, S. Keller, S. Nakamura, S. DenBaars, J. Speck, U.K. Mishra	Applied Physics Letters 98 24507	Journal

687	2011	“Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals” E. Matioli, S. Brinkley, K.M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch	Applied Physics Letters 98 251112	Journal

688	2011	“Thermally Induced Pore Formation in Epitaxial ZnO Films Grown from Low Temperature Aqueous Solution” J.J. Richardson, G. Goh, H.Q. Le, L.L. Liew, F.F. Lange, S. DenBaars	Crystal Growth & Design	Journal

689	2011	“High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm(2)” Y.J. Zhao, S. Tanaka, C.C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Express 4 082104	Journal

690	2011	“High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes” Y.J. Zhao, S. Tanaka, Q.M. Yan, C.Y. Huang, R.B. Chung, C.C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 99 051109	Journal

691	2011	“Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells” C.J. Neufeld, S.C. Cruz, R.M. Farrell, M. Iza, S. Keller, S. Nakamura, S. DenBaars, J. Speck, U.K. Mishra	Applied Physics Letters 99 071104	Journal

692	2011	“Misfit dislocation formation via pre-existing threading dislocation glide in (1122) semipolar heteroepitaxy” P.S. Hsu, E.C. Young, A.E. Romanov, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 99 081912	Journal

693	2011	“Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with+3V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition” T. Fujiwara, R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. Speck, S. DenBaars, U. Mishra	Applied Physics Express 4 096501	Journal

694	2011	“Group III-nitride lasers: a materials perspective” M.T. Hardy, D.F. Feezell, S. DenBaars, S. Nakamura	Materials Today Vol 14 No 9 408-415	Journal

695	2011	“AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers” RM Farrell, DA Haeger, PS Hsu, MT Hardy, KM Kelchner, K. Fujito, DF Feezell, UK Mishra, SP DenBaars, JS Speck, S. Nakamura	Applied Physics Express 4 092105	Journal

696	2011	“Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN” R.B. Chung, O. Bierwagen, F. Wu, S. Keller, S. DenBaars, J. Speck, S. Nakamura	Japanese Journal of Applied Physics 50 101001	Journal

697	2011	“Influence of Mg-doped barriers on semipolar (2021) multiple-quantum-well green light-emitting diodes” C.Y. Huang, Q.M. Yan, Y.J. Zhao, K. Fujito, D. Feezell, C.G. Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 99 141114	Journal

698		Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R.M. Farrell, D.A. Haeger, P.S. Hsu, M.C. Schmidt, K. Fujito, D.F. Feezell, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letters 99 171115	Journal

699	2011	“High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R.M. Farrell, D.A. Haeger, P.S. Hsu, M.C. Schmidt, K. Fujito, D.F. Feezell, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letters 99 171113	Journal

700	2011	“High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes (vol 99, 051109, 2011)” Y. Zhao, S. Tanaka, Q. Yan, CY Huang, R. Chung, CC Pan, KFujito, D. Feezell, CG Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Appliedd Physics Letters 99 229902	Journal

701	2011	“Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes” J.J. Richardson, I. Koslow, C.C. Pan, Y. Zhao, J.S. Ha, S. DenBaars	Applied Physics Express 4 126502	Journal

702	2011	“Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells” C.Y. Huang, M.T Hardy, K. Fujito, D.F. Feezell, J.S. Speck, S.P. DenBaars, S. Nakamura	Applied Physics Letters 99 241115	Journal

703	2011	“Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting” S.E. Brinkley, N. Pfaff, K.A. Denault, Z.J. Zhang, H.T. Hintzen, R. Seshadri, S. Nakamura, S.P. DenBaars	Applied Physics Letters 99 241106	Journal

704	2011	“High temperature thermoelectric properties of optimized InGaN” A. Sztein, H. Ohta, J.E. Bowers, S. DenBaars, S. Nakamura	Journal of Applied Physics 110 123709	Journal

705	2011	“Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures” F. Wu, E.C. Young, I. Koslow, M.T. Hardy, P.S. Hsu, A.E. Romanov, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters 99 251909	Journal

706	2012	“Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an Al2O3 Etch-Stop Technology” S. Kolluri, S. Keller, S. DenBaars, U.K. Mishra	IEEE Electronic Device Letters Vol 33 No 1 44-46	Journal

707	2012	”GaN Laser Diodes on Nonpolar and Semipolar Planes” K.M. Kelchner, S. Denbaars, J. Speck	Advances in Semiconductor Lasers	Book Chapter

708	2012	”A green-yellow emitting oxyfluoride solid solution phospor Sr2Ba(AlO4F)(1-x)(SiO5)(x):Ce3+for thermally stable, high color rendition solid state white lighting” K. Denault, N. George, S. Paden, S. Brinkley, A. Mikhailovsky, J. Neuefeind, S. DenBaars, R. Seshadri	Journal of Materials Chemistry 22, 18204-18213	Journal

709	2012	“High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy” A.H. Reading, J.J. Richardson, C.C. Pan, S. Nakamura, S. DenBaars	Optics Express Vol 20 No 1 A13-A19	Journal

710	2012	“444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer” P.S. Hsu, M.T. Hardy, F. Wu, I. koslow, E.C. Young, A.E. Romanov, K. Fujito, Feezell, J.S. Speck, S. Nakamura, S. DenBaars	Applied Physics Letters 100 021104	Journal

711	2012	“Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices” R.M. Farrell, E.C. Young, F. Wu, S. DenBaars, J. Speck	Semiconductor Science and Technology 27, 024001	Journal

712	2012	“Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition” T.A. Henry, A. Armstrong, K.M. Kelchner, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters 100 082103	Journal

713	2012	“The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN” R.B. Chung, H.T. Chen, C.C. Pan, J.S. Ha, S. DenBaars, S. Nakamura	Applied Physics Letters 100 091104	Journal

714	2012	“Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN” G.A. Garrett, P. Rotella, H.G. Shen, M. Wraback, D.A. Haeger, R.B. Chung, N. Pfaff, E.C. Young, S. DenBaars, J. Speck, D.A. Cohen	Phsyics Status Solidi B-Basic Solid State Physics Vol 249 No 3 507-510	Journal

715	2012	“Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes” S.E. Brinkley, C.L. Keraly, J. Sonoda, C. Weisbuch, J. Speck, S. Nakamura, S. DenBaars	Applied Physics Express 5 032104	Journal

716	2012	“Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica” S. Keller, J. Lu, U.K. Mishra, S. DenBaars, J. Speck	Physica Status Solidi A-Applications and Materials Science Vol 209 No 3 431-433	Journal

717	2012	“Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward "Lighting Revolution"” S.T. Tan, X.W. Sun, H.V. Demir, S. DenBaars	IEEE Photonics journal Vol 4 No 2 613-619	Journal

718	2012	“Nanoindentation of Laterally Overgrown Epitaxial Gallium Nitride” M. Martyniuk, G. Parish, H. Marchand, P.T. Fini, S. DenBaars, L. Faraone	Electronic Materials Letters Vol 8 No 2 111-115	Journal

719	2012	“Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells” Y.L. Hu, R.M. Farrell, C.L. Neufeld, M. Iza, S.C. Cruz, M. Pfaff, D. Simenov, S. Keller, S. Nakamura, S. DenBaars, U.K. Mishra, J. Speck	Applied Physics Letters 100 161101	Journal

720	2012	“384 nm laser diode grown on a (2021) semipolar relaxed AlGaN buffer layer” D.A. Haeger, E.C. Young, R.B. Chung, F. Wu, N.A. Pfaff, M. Tsai, K. Fujito, Speck, S. Nakamura, S. DenBaars, D.A. Cohen	Applied Physics Letters 100 161107	Journal

721	2012	“Stress relaxation and critical thickness for misfit dislocation formation in (1010) and (3031) InGaN/GaN heteroepitaxy” P.S. Hsu, M.T. Hardy, E.C. Young, A.E. Romanov, S. DenBaars,S. Nakamura, U.K. Mishra, J. Speck	Applied Physics Letters 100 171917	Journal

722	2012	“Optical Characterization of Double Peak Behavior in {1011} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates” S.B. Choi, S.Y. Bae, D.S. Lee, B.H. Kong, H.K. Cho, J.H. Song, B.J. Ahn, J.F. Keading, S. Nakamura, S. DenBaars, J. Speck	Japanese Journal of Applied Physics 51 052101	Journal

723	2012	“Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs” A. Sasikumar, A. Arehart, S. Kolluri, M.H. Wong, S. Keller, S. DenBaars, J. Speck, U.K. Mishra, S. A. Ringel	IEEE Electronic Device Letters Vol 33 No 5 658-660	Journal

724	2012	“InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)” S. Lal, E. Snow, J. Lu, B. Swenson, S. Keller, S. DenBaars, U.K. Mishra	Jounral of Electronic Materials Vol 41 No 5 857-864	Journal

725	2012	“Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation” N. Julian, O. Mages, C. Zhang, J. Zhang, S. Kraemer, S. Stemmer, S. DenBaars, L. Coldren, P. Petroff, J. Bowers	Journal of Electronic Materials Vol 41 No 5 845-852	Journal

726	2012	“Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells” Y.J. Zhao, Q.M. Yan, C.Y. Huang, S.C. Huang, P.S. Hsu, S. Tanaka, C.C. Pan, Y. Kawaguchi, K. Fujito, C.G. Van de Walle, J. Speck, S. DenBaars, S. Nakamura, D. Feezell	Applied Physics Letters 100 201108	Journal

727	2012	“Trace analysis of non-basal plane misfit stress relaxation in (2021) and (3031) semipolar InGaN/GaN heterostructures” M.T. Hardy, P.S. Hsu, F. Wu, I.L. Koslow, E.C. Young, S. Nakamura, A.E. Romanov, S. DenBaars, U.K. Mishra, J. Speck	Applied Physics Letters 100 202103	Journal

728	2012	“High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes” C.C. Pan, S. Tanaka, F. Wu, Y.J. Zhao, J. Speck, S. Nakamura, S. DenBaars, D. Feezell	Applied Physics Express 5 062103	Journal

729	2012	“Influence of polarity on carrier transport in semipolar (2021) and (2021) multiple-quantum-well light-emitting diodes” Y. Kawaguchi, C.Y. Huang, Y.R. Wu, Q.M. Yan, C.C. Pan, Y.J. Zhao, S. Tanaka, K. Fujito, D, Feezell, C.G. Van de Walle, S. DenBaars, S. Nakamura	Applied Physics Letters 100 231110	Journal

730	2012	“High-brightness polarized light-emitting diodes” E. Matioli, S. Brinkley, K. Kelchner, Y. Hu, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch	Light: Science & Applications Vol. 1, 8	Journal

731	2012	“Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers” C. Holder, J. Speck, S. DenBaars, S. Nakamura, D. Feezell	Applied Physics Express 5 092104	Journal

732	2012	“Performance and polarization effects in (1122) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers” I.L. Koslow, M.T. Hardy, P.S. Hsu, P.Y. Dang, F. Wu, A. Romanov, Y.R. Wu, E.C. Young, S. Nakamura, J. Speck, S. DenBaars	Applied Physics Letters 101 121106	Journal

733	2012	“Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (2021) InGaN/GaN heterostructures” M.T. Hardy, E.C. Young, P.S. Hsu, D.A. Haeger, I.L. Koslow, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters 101 132102	Journal

734	2012	“The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes” R.B. Chung, C. Han. C.C. Pan, N. Pfaff, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 101 131113	Journal

735	2012	“Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission” E.C. Young, F. Wu, A.E. Romanov, D.A. Haeger, S. Nakamura, S. DenBaars, D.A. Cohen, J. Speck	Applied Physics Letters 101 142109	Journal

736		“Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20(2)over-bar(1)over-bar) Blue Light-Emitting Diodes” CC Pan, T. Gilbert, N. Pfaff, S. Tanaka, YJ Zhao, D. Feezell, JS Speck, S. Nakamura and SP DenBaars	Applied Physics Express 5 102103	Journal

737	2012	“Thermoelectric properties of lattice matched InAIN on semi-insulating GaN templates” A. Sztein, JE Bowers, SP DenBaars and S. Nakamura	Journal of Applied Physics 112, Issue 8	Journal

738	2012	“Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000(1)over-bar)GaN” S. Keller, N. Pfaff, SP DenBaars and UK Mishra	Applied Physics Letters, 101, Issue 18	Journal

739	2012	“Charge and Mobility Enhancement in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal Organic Chemical Vapor Deposition Using a Graded Growth Strategy” J Lu, YL Hu, DF Brown, F. Wu, S. Keller, JS Speck, SP DenBaars and UK Mishra	Japanese Journal of Applied Physics, 51, Issue 11	Journal

740	2012	“Suppression of relaxation in (20(2)over-bar)InGaN/GaN laser diodes using limited area epitaxy” MT Hardy, S. Nakamura, JS Speck and SP DenBaars	Applied Physics Letters, 101, Issue 24	Journal

741	2013	“Improving color rendition in solid state white lighting through the use of quantum dots” KA Denault, AA Mikhailovsky, S Brinkley, SP DenBaars and R. Seshadri	Journal of Materials Chemistry, 1, Issue 7	Journal

742	2013	“Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers” C. Holder, D. Feezell, J. Speck, S. DenBaars, S. Nakamura	SPIE Proceedings, Vol 8639	Refereed Proceeding

743	2013	“Development of High-Performance Nonpolar III-Nitride Light-Emitting Devices” R. Farell, E. Young, F. Wu, S. Nakamura, SP DenBaars, J Speck	SIECPC Proceedings	Refereed Proceeding

744	2013	“Gallium nitride based light emitting diodes (LEDS) for energy efficient lighting and displays” S. DenBaars, S. Nakamura, S. Speck	SIECPC Proceedings	Refereed Proceeding

745	2013	“Structure-composition relationships and optical properties in cerium-substituted (Sr,Ba)3(Y,La)(BO3)3 borate phosphors” K. Denault, Z. Cheng, J. Brgoch, S. DenBaars, R. Seshadri	Journal of Materials Chemistry C, 1, 7339	Journal

746	2013	“Optical polarization characteristics of semipolar (30(3)over-bar1) and (30(3)over-bar(1)over-bar)” YJ Zhao, QM Yan, D. Feezell, K Fujito, CG Van de Walle, JS Speck, SP DenBaars, and S. Nakamura	Optics Express, 21, Issue 1	Journal

747	2013	“Microstructure of ZnO films synthesized on MgAL2O4 from low-temperature aqueouse solution: growth and post-annealing” B. Nijikovsky, JJ Richardson, M Garbercht, SP DenBaars, WD Kaplan	Journal of Materials Science, 48, Issue 4	Journal

748	2013	“Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient light and displays” SP DenBaars, D Feezell, K. Kelchner, S. Pimputkar, CC Pan, CC Yen, S. Tanaka, YJ Zhao, N Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, JS Speck and S. Nakamura	Acta Materialia 61, Issue 3	Journal

749	2013	“Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates” RM Farrell, DA Haeger, K Fujito, SP DenBaars, S. Nakamura and JS Speck	Journal of Applied Physics, 113, Issue 6	Journal

750	2013	“Suppressing voide defects in long wavelength semipolar (20(21)over-bar InGaN quantum wells by growth rate optimization” YJ Zhao, F. Wu, CY Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, JS Speck, SP DenBaars and S. Nakamura	Applied Physics Letters 102, Issue 9	Journal

751	2013	“Optical Properties of extended and localized states in m-plane InGaN quantum wells” S. Marcinkevicius, KM Kelchner, S. Nakamura, SP DenBaars and JS Speck	Applied Physics Letters 102, Issue 10	Journal

752	2013	“Semipolar (20(2)over-bar(1)over-bar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting” DF Feezell, JS Speck, SP DenBaars and S. Nakamura	Journal of Display Technology 9, Issue 4	Journal

753	2013	“Tuning luminescent properties through solid-solution in (Ba1-xSrx)(9)Sc2Si6O24:Ce3+,Li+” J. Brgoch, CKH Borg, KA Denault, SP DenBaars and R. Seshadri	Solid State Sciences 18, 149-154	Journal

754	2013	“Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III-Nitride Light-Emitting Diodes” Y. Kawaguchi, SC Huang, RM Farrell, YJ Zhao, JS Speck, SP DenBaars and S. Nakamura	Applied Physics Express 6, Issue 5	Journal

755	2013	“Calculated thermoelectric properties of InxGa1-xN, InAl1-xN and AlxGa1-xN” A. Sztein, J. Haberstroh, JE Bowers, SP DenBaars and S. Nakamura	Journal of Applied Physics 113, Issue 18	Journal

756	2013	“Green Semipolar (20(2)over-bar(1)over-bar) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth” YJ Zhao, SH Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, JS Speck, SP DenBaars and S. Nakamura	Applied Physics Express 6, Issue 6	Journal

757	2013	“Very high channel conductivity in ultra-thin channel N-polar GaN/(AIN, InAIN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition” J. Ling, D. Denninghoff, R. Yeluri, S. Lal, G. Gupta, M. Laurent, S. Keller, SP DenBaars and UK Mishra	Applied Physics Letters 102, Issue 23	Journal

758	2013	“Comparative analysis of 20(2)iver-bar1 and 20(2)over-bar(1)over-bar semipolar GaN light emitting diodes using atom probe tomography” R. Shivaraman, Y. Kawaguchi, S. Tanaka, SP DenBaars, S. Nakamura and JS Speck	Applied Physics Letters 102, Issue 25	Journal

759	2013	“N-polar GaN epitaxy and high electron mobility transistors” MH Wong, S. Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, NA Fichtenbaum, E. Ahmadi, U. Singisetti, A. Chini, S. Rajan, SP DenBaars, JS Speck and UK Mishra	Semiconductor Science and Technology 28, Issue 7	Journal

760	2013	“Efficient and stable laser-driven white lighting” KA Denault, M. Cantore, S. Nakamura, SP DenBaars and R. Seshadri	AIP Advances 3, Issue 7	Journal

761	2013	“Direct comparison of traps in InAIN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy” A. Sasikumar, AR Arehart, S. Martin-Horcajo, MF Romero, Y Pei, D Brown, F. Recht, MA di Forte-Poisson, F. Calle, MJ Tadler, S Keller, SP DenBaars, UK Mishra and SA Ringel	Applied Physics Letters 103, Issue 3	Journal

762	2013	“An Efficient, Thermally Stable Cerium-Based Silicate Phosphor for Solid State White Lighting” J Brgoch, CKH Borg, KA Denault, A. Mikhailovsky, SP DenBaars, R. Seshadri	Inorganice Chemistry 52, Issue 14	Journal

763	2013	“Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells” S. Keller, RM Farrell, M. Iza, Y. Terao, N. Young, UK Mishra, S. Nakamura, SP DenBaars and JS Speck	Japanese Journal of Applied Physics 52, Issue 8	Journal

764	2013	“Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage” Y. Kawaguchi, CY Huang, YR Wu, YJ Zhao, SP DenBaars and S. Nakamura	Japanese Journal of Applied Physics 52, Issue 8	Journal

765	2013	“Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes” MT Hardy, CO Holder, DF Feezell, S. Nakamura, JS Speck, DA Cohen and SP DenBaars	Appliedd Physics Letters 103, Issue 8	Journal

766	2013	“Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes” N. Pfaff, KM Kelchner, DF Feezell, S. Nakamura, SP DenBaars and JS Speck	Applied Physics Express 6, 092104	Journal

767	2013	“Proxies from Ab Initio Calculations for Screening Efficient Ce3+ Phosphor Hosts” J. Brgoch, S. DenBaars, R. Seshadri	The Journal of Physical Chemistry 117, 35	Journal

768	2013	“An Efficient, Thermally Stable Cerium-Based Silicate Phosphor for Solid State White Lighting” J. Brgoch, CKH Borg, KA Denault, SP DenBaars, R. Seshadri	Inorganic Chemistry, 52, 14, pp 8010-8016	Journal

769	2013	“Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells” S. Marcinkevicius, KM Kelchner, LY Kuritzky, S. Nakamura, SP DenBaars, JS Speck	Applied Physics Letters 103 111107	Journal

770	2013	“Near-field investigation of spatial variations of (20(2)over-bar(1)over-bar) InGaN quantum well emission spectra” S. Marcinkevicius, Y. Zhao, KM Kelchner, S. Nakamura, SP DenBaars and JS Speck	Applied Physics Letters, 103,131116	Journal

771	2013	“Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20(2)over-bar(1)over-bar) GaN substrates” A. Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, SP DenBaars and S. Nakamura	Applied Physics Letters, 103,151112	Journal

772	2013	“Blue and aquamarine stress-relaxed semipolar (11(2)over-bar) laser diodes” PS Hsu, F. Wu, EC Young, AE Romanov, K. Fujito, SP DenBaars, JS Speck and S. Nakamura	Applied Physics Letters, 103,161117	Journal

773	2013	“High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates” N.G. Young, R.M. Farrell, L. Hu, Y. Terao, M. Iza, S. Keller, S.P. DenBaars, S. Nakamura, J. S. Speck	Applied Physics Letters, 103, 173903	Journal

774	2013	“Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates” KM Kelchner, LY Kuritzky, K. Fujito, S. Nakamura, SP DenBaars, JS Speck	Journal of Crystal Growth 382 80-86	Journal

775	2013	“Comparison of Polished and Dry Etched Semipolar (11(2)over-bar2) III-Nitride Laser Facets” PS Hsu, RM Farrell, JJ Weaver, K. Fujito, SP DenBaars, JS Speck and S. Nakamura	IEEE Photonics Technology Letters 25, 2105-2107	Journal

776	2013	“True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy” MT Hardy, F Wu, PS Hsu, DA Haeger, S. Nakamura, JS Speck, and SP DenBaars	Journal of Applied Physics 114, 183101	Journal

777	2013	“Optimization of Annealing Process for Improved InGaN Solar Cell Performance” NC Das, ML Reed, AV Sampath, H Shen, M. Wraback, RM Farrell, M Iza, SC Cruz, JR Lang, NG Young, Y Terao, CJ Neufeld, S Keller, S Nakamura, SP DenBaars, UK Mishra, and JS Speck	Journal of Electronic Material 42, 12, pp 3467-3470	Journal

778	2013	“Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor” S. lal, J Lu, G Gupta, BJ Thibeault, SP DenBaars, and UK Mishra	IEEE Electron Device Letters 34, 12, pp1500-1502	Journal

779	2013	“Rapid microwave preparation of cerium-substituted sodium yttrium silicate phosphors for solid state white lighting” J Brgoch, CKH Borg, KA Denault, JR Douglas, TA Strom, SP DenBaars, and R Seshadri	Solid State Sceinces 26, pp 115-120	Journal

780	2013	“Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane Gan” AM Armstrong, K. Kalchner, S. Nakamura, SP DenBaars, and JS Speck	Applied Physics Letters 103, 23	Journal

781	2014	“Polarization field engineering GaN/AIN/AIGaN superlattices for enhanced thermoelectric properties” A. Sztein, JE Bowers, SP DenBaars, and S. Nakamura	Applied Physics Letters 104, 4	Journal

782	2014	“Onset of Plastic relaxation in semipolar (11(2)over-bar2) InxGa1-xN/GaN heterstructures” IL Koslow, MT Hardy, PS Hsu, F. Wu, AE Romanov, EC Young, S. Nakamura, SP DenBaars, and JS Speck	Journal of Crystal Growth 388, pp 45-53	Journal

783	2014	“Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers” I. Koslow, C. McTaggart, F. Wu, S. Nakamura, J. Speck, S. DenBaars	Applied Physics Express 7, 031003	Journal

784	2014	“Engineering the (In, Al, Ga)N back-barriers to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-Polar GaN high-electron-mobility-transistors” J. Lu, X. Zheng, M. Guidry, D. Denninghoff, E. Ahmadi, S. Lal, S. Keller, SP DenBaars, and UK Mishra	Applied Physics Letters 104, 9	Journal

785	2014	“Highly polarized photoluminescence and its dynamics in semipolar (20 2 ¯ 1 ¯) InGaN/GaN quantum well” S. Marcinkeviius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, J.S. Speck	Applied Physics Letters 104, 111113	Journal

786	2014	“Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes” Y. Ji, W. Lui, R. Chen, S. T. Tan, Z. H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. DenBaars, S. Nakamura, H. Demir	Applied Physics Letters 104, 143506	Journal

787	2014	“Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in SrxBa2-xSiO4:Eu2+ Orthosilicate Phosphors” K. Denault, J. Brgoch, M. Gaultois, A. Mikhailovsky, R. Petry, H. Winkler, S. P. DenBaars, R. Seshadri	Chemisty of Materials 26, 7	Journal

788	2014	“Stacking faults and interface roughening in semiploar ( 20 2¯1¯) single InGaN quantum wells for long wavelength emission” F. Wu, Y. Zhao, A. Romanov, S. P DenBaars, S. Nakamura, J. S. Speck	Applied Physics Letters 104, 151901	Journal

789	2014	“High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device intergration” N.G. Young, E. E. Perl, R. M. Farrell, M. Iza, S. Keller, J. E. Bowers, S. Nakamura, S. P. DenBaars, J.S. Speck	Applied Physics Letters 104, 163902	Journal

790	2014	“Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls” D. C. Elias, A. Sivananthan, C. Zhang, S. Keller, H.W. Chiang, J. Law, B. Thibeault, W. Mitchell, S. Lee, A. Carter, C. Y. Huang, V. Chobpattana, S. Stemmer, S. P. DenBaars, L. Coldren, M. Rodwell	Japanese Journal of Applied Physics 53, 065503	Journal

Since Last Review

791

2014

“Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy”

M. Piccardo, L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura,

J. S. Speck, C. Weisbuch, and J. Peretti

Physical Review B 89, 235124

Journal

792

2014

“Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching”

C. Holder, J. Leonard, R. M. Farrell, D. Cohen, B. Yonkee, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell

Applied Physics Letters 105, 031111

Journal

793	2014	“Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers” H. Li, S. Keller, S. DenBaars and U. Mishra	Japanese Journal of Applied Physics 53, 095504	Journal

794	2014	“Carrier redistribution between different potential sites in semipolar (2021) InGaN quantum wells studied by near-field photoluminescence” S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars and J. S. Speck	Applied Physics Letters 105, 111108	Journal

795	2014	“Surface Structured Optical Coatings with Near-Perfect Broadband and Wide-Angle Antireflective Properties” E. Perl, W. McMahon, R. Farrell, S. P. DenBaars, J. S. Speck, and J. Bowers	Nano Letters 14, 5960-5964	Journal

796	2014	“High-power low-droop violet semipolar (3031) InGaN/GaN light-emitting diodes with thick active layer design” D. Becerra, Y. Zhao, S. Oh, C. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura	Applied Physics Letters 105, 171106	Journal

797	2014	“Recent progress in metal-organic chemical vapor deposition of (0001) N-polar group-III nitrides” S. Keller, H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars and U. K. Mishra	Semiconductor Science And Technology 29, 113001	Journal

798	2014	“Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition” M. A. Laurent, G. Gupta, S. Wienecke, A. A. Muqtadir, S. Keller, S. P. DenBaars, and U. K. Mishra	Journal of Applied Physics 116, 183704	Journal

799	2015	“Spatial variations of optical properties of semipolar InGaN quantum wells” S. Marcinkevičiusm, K.Gelžinytė, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, J. S. Speck	Gallium Nitride Materials And Devices X 9363, 93631U	Book Proceeding

800	2015	“Ammonia molecular beam epitaxy technology for UV light emitters” E.C. Young, B.P. Yonkee, J. Leonard, F. Wu, S.P. Denbaars, S. Nakamura, J.S. Speck	2015 IEEE Photonics Society Summer Topical Meeting Series (SUM) pp137-138	Conference Paper

801	2015	“2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation” C. Lee, C. Zhang, M. Cantore, R. Farrell, S. H. Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars	2015 IEEE Photonics Society Summer Topical Meeting Series (SUM) pp112-113	Conference Paper

802	2015	“Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate” C. Shen, J. Leonard, A.Pourhashemi, H. Oubei, M. S. Alias, T. Khee Ng, S. Nakamura, S.P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki and B. S. Ooi	2015 IEEE Photonics Conference (IPC). Proceedings Pp581-582	Conference Paper

803	2015	“High spatial uniformity of photoluminescence spectra in semipolar (2021) plane InGaN/GaN quantum wells” K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck	Journal of Applied Physics 117, 023111	Journal

804	2015	“Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1-xN/GaN quantum wells studied with time-resolved cathodoluminescence” Y. Estrin, D. H. Rich, S. Keller and S. P. DenBaars	Journal of Applied Physics 117, 043105	Journal

805	2015	“Stable vicinal step orientations in m-plane GaN” K.M. Kelchner, L.Y. Kuritzky, S. Nakamura, S.P. DenBaars, and J.S. Speck	Journal of Crystal Growth Volume 411 , Pages 56–62	Journal

806	2015	“High-power blue laser diodes with indium tin oxide cladding on semipolar (2021) GaN substrates” A. Pourhashemi, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura	Applied Physics Letters 106, 111105	Journal

807	2015	“Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture” L. Megalini, D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars and D.A. Cohen	Appied Physics Express 8, 042701	Journal

808	2015	“Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures” H. Li, S. Keller, S. H. Chan, J. Lu, S. P. DenBaars and U. K. Mishra	Semiconductor Science Technology 30, 055015	Journal

809	2015	“Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions” L. Megalini1, L. Y. Kuritzky, J. T. Leonard, R. Shenoy, K. Rose, S. Nakamura, J. S. Speck, D. A. Cohen and S. P. DenBaars	Applied Physics Express 8, 066502	Journal

810	2015	“Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates” L. Y. Kuritzky, D. J. Myers, J. Nedy, K.M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck	Appied. Physics Express 8 061002	Journal

811	2015	“4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication” C. Lee, C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J.S. Speck, S.Nakamura, J. E. Bowers, and S. P. DenBaars	Optics Express 23, pp16232-16237	Journal

812	2015	“Demonstration of low resistance ohmic contacts to p-type (2021) GaN” B. P. Yonkee, R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck and S. Nakamura	Semiconductor Science Technology 30, 075007	Journal

813	2015	“Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture” J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura	Applied Physics Letters 107, 011102	Journal

814	2015	“Observations of exciton-surface plasmon polariton coupling and exciton-phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films” Y. Estrin, D. H. Rich, S. Keller and S. P. DenBaars	Journal of Physics: Condensed Matter, 27, 265802	Journal

815	2015	“High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier” C. Pan, Q. Yan, H. Fu, Y. Zhao,Y.Wu, C. Walle, S. Nakamura and S. P. DenBaars	Electronics Letters, 51, 1187-1189	Journal

816	2015	“Low damage dry etch for III-nitride light emitters” J. G. Nedy, N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C.Weisbuch and J. S Speck	Semiconductor Science And Technology 30, 085019	Journal

817	2015	“Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact” J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck and S. Nakamura	Applied Physics Letters 107, 091105	Journal

818	2015	“Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (2021) AlGaN/GaN buffer layers” E. C. Young, , B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, J. S. Speck	Journal Of Crystal Growth 425 pp389-392	Journal

819	2015	“Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells” S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura	Applied Physics Letters 107, , 101104	Journal

820	2015	“Thermally enhanced blue light-emitting diode” J. Xue, Y. Zhao, S. Ho Oh, W. F. Herrington, J. S. Speck, S. P. DenBaars, S. Nakamura, and R. J. Ram	Applied Physics Letters 107, 121109	Journal

821	2015	“InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays” S. Keller, C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, S. P. DenBaars and U. K. Mishra	Semiconductor Science Technology 30, 105020	Journal
822	2015	“Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts” J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura	Journal of Applied Physics 118, 145304	Journal

823	2015	“2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system” C. Lee, C. Shen, H. M. Oubei, M. Cantore,B. Janjua,T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S.Nakamura, B. S. Ooi, and S. P. DenBaars	Optics Express 23, pp29779-29787	Journal

824	2015	“Impact of carrier localization on radiative recombination times in semipolar (202¯1)(202¯1) plane InGaN/GaN quantum wells” R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck	Applied Physics Letters 107, 211109	Journal

825	2015	“Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication” Y. ChiehChi, D. Hsieh, C. Lin, H. Chen, C. Huang, J. He, B. Ooi, S. P. DenBaars, S. Nakamura, H. Kuo & G. Lin	Scientific Reports 5, 18690	Journal

826	2016	“Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells” M. D. Mensi, D. L. Becerra, R. Ivanov, S. Marcinkevičius, S. Nakamura, S. P. DenBaars, and J. S. Speck	Optical Materials Express 6, pp 39-45	Journal

827	2016	“Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture” J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura	Applied Physics Letters 108, 031111	Journal

828	2016	“High luminous flux from single crystal phosphor-converted laser-based white lighting system” M. Cantore, N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars	Optics Express 24,. A215-A221	Journal

829	2016	“Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices” S. H. Chan, M. Tahhan, X. Liu, D. Bisi, C. Gupta, O. Koksaldi, H. Li, T. Mates, S. P. DenBaars, S. Keller	Japanese Journal Of Applied Physics 55, 021501	Journal

830	2016	“High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm” C. Shen, T. Khee Ng, J. T. Leonard, A.Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars J. S. Speck, A. Y. Alyamani, M.M. Eldesouki,and B. S. Ooi	ACS Photonics 3, 262–268	Journal

831	2016	“Hybrid tunnel junction contacts to III–nitride light-emitting diodes” E. C. Young, B. P. Yonkee, F. Wu, S. Ho Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck	Applied Physics. Express 9, 022102	Journal

832	2016	“Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes” N. G. Young, R. M. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck	Applied Physics Letters 108, 061105	Journal

833	2016	“Barrier height inhomogeneity and its impact on (Al, In, Ga)N Schottky diodes” M. A. Laurent, G. Gupta, D. J. Suntrup III, S. P. DenBaars, and U. K. Mishra	Journal of Applied Physics 119, 064501	Journal

834	2016	“High-power LEDs using Ga-doped ZnO current-spreading layers” A.J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J.S. Speck and S.P. DenBaars	Electronics Letters 52, pp 304-305	Journal

835	2016	‘”Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets” D. L. Becerra, L.Y. Kuritzky, J. Nedy, A. S. Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura	Applied Physics Letters 108, 091106	Journal
836	2016	“Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact” B. P. Yonkee, E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura	Optics Express 24, pp. 7816-7822