Publications

 

No.

 

Year

 

Title and Authors

 

Publisher

 

Category

1

 

1986

 

 "Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee

 

J. Crystal Growth, 77, 186

 

Refereed Conference Proceedings

2

 

1987

 

"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus

 

Technical Program of the Electronic Materials Conference, paper N7, 50

 

Refereed Conference Proceedings

3

 

1987

 

"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus

 

Appl. Phys. Lett. 51, 1530

 

Journal

4

 

1987

 

"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus

 

Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA

 

Refereed Conference Proceedings

5

 

1987

 

"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa

 

Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December

 

Refereed Conference Proceedings

6

 

1987

 

"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus

 

Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September

 

Conference Proceedings

7

 

1988

 

"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko

 

Crystal Growth, 93, 195

 

Journal

8

 

1988

 

"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko

 

Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89

 

Refereed Conference Proceedings

9

 

1989

 

"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas

 

J. Electrochem.  Soc., 136, No. 7, 2067

 

Journal

10

 

1989

 

"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars

 

Appl. Phys. Lett., 54, 635

 

Journal

11

 

1989

 

"The Role of Surface and Gas Phase Reactions in Atomic Layer  Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa

 

Prog. Crystal Growth and Charact., 19, 137

 

Journal

12

 

1989

 

"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus

 

J. Crystal Growth, 98, 195

 

Journal

13

 

1990

 

"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,

 

Acta Polytechnica Scandivica, Ch. 195, 39

 

Journal

14

 

1991

 

"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars

 

J. Crystal Growth, 107, 73

 

Journal

15

 

1992

 

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren

 

Electronic Lett. 28, No.20, 1873

 

Journal

16

 

1992

 

"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz

 

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39

 

Conference Proceedings

17

 

1992

 

"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers

 

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54

 

Conference Proceedings

18

 

1992

 

"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus

 

Proceedings of the Integrated Photonics Research Conference, New Orleans, LA,  WF-1, pp. 54-55

 

Conference Proceedings

19

 

1992

 

"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

P7, IEDM Tech. Digest, 311

 

Journal

20

 

1992

 

"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,

 

Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )

 

Book Chapter

21

 

1993

 

"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

IEEE Electron. Device Lett. 14,  No. 2., 60

 

Journal

22

 

1993

 

"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

Proceedings ofUltrafast electronics and Optoelectronics Conference

 

Conference Proceedings

23

 

1993

 

"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers

 

Electronics Letters, 29, No. 4, pp.340-341

 

Journal

24

 

1993

 

"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 375-378, IEEE Society, Piscataway, New Jersey

 

Conference Proceedings

25

 

1993

 

"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers

 

IEEE Proceedings of the 5th Intl. InP and Related Materials  Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 239-242, IEEE Society, Piscataway, New Jersey

 

Conference Proceedings

26

 

1993

 

"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars

 

Mat. Research Soc. Proceedings, San Francisco, April

 

Refereed Conference Proceedings

27

 

1993

 

"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

Electronics Lett. 29, No. 4, pp.372-374

 

Journal

28

 

1993

 

"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown  with TBA and TBP", S.P. DenBaars, A.L.Holmes, Jr., M. E. Heimbuch, and C. M. Reaves

 

Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June

 

Conference Proceedings

29

 

1993

 

"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars

 

Appl. Physics Lettters, V63, N25:3417-3419, December

 

Journal

30

 

1993

 

"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars

 

 , V63, N23:3203-3205, December

 

Journal

33

 

1993

 

"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars

 

Electronics Letters, V29, N4: 340-342

 

Journal

34

 

1993

 

"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

 

Electronics Letters, V29, N4: 372-373

 

Journal

35

 

1993

 

"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

 

IEEE Electron Device Letters, V14, N2: 60-62

 

Journal

36

 

1993

 

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren

 

Electronics Letters, V28, N20: 1873-1874

 

Journal

37

 

1993

 

"Photoluminescence Studies of a Quantum Well Modulated  by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars

 

Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)

 

Conference Proceedings

38

 

1994

 

"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren

 

Journal  of Electronic Materials, V23, N2:87-91, February

 

Journal

39

 

1994

 

"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

Journal  of Electronic Materials, V23, N2:233-237, February

 

Journal

40

 

1994

 

"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma

 

Journal of Crystal Growth, V145, N1-4: 721-727

 

Journal

41

 

1994

 

"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra

 

Applied Surface Science, V82-3, 126-131

 

Journal

42

 

1994

 

"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars

 

Journal of Vacuum Science and Technology B, V12, N6: 3704-3707

 

Journal

43

 

1994

 

"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars

 

Superlattices and Microstructures, V15, N1: 15-21

 

Journal

44

 

1994

 

"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V65, N17: 2159-2161

 

Journal

45

 

1994

 

"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars

 

Electronics Letters, V30, N18: 1492-1494.

 

Journal

46

 

1994

 

"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli

 

Electronics Letters, V30, N12:954-956

 

Journal

47

 

1994

 

"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars

 

Applied Physics Letters, V64, N20: 2658-2660

 

Journal

48

 

1994

 

"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars

 

IEEE Proceedings of the 6th Intl. InP and Related Materials Conf

 

Conference Proceedings

49

 

1994

 

"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch

 

SPIE Proceedings of the Optoelectronics/Laser Conf.

 

Conference Proceedings

50

 

1994

 

"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi

 

Proceedings of the Conf  on Laser and Electro-Optics

 

Conference Proceedings

51

 

1994

 

 "GaInAs/GaInP Double Barrier Structures:  Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars

 

Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152

 

Conference Proceedings

52

 

1995

 

"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars

 

Surface Science, V326, N3: 209-217

 

Journal

53

 

1995

 

"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman

 

Journal of the Korean Physical Society, V28, S: S37-S42.

 

Journal

54

 

1995

 

"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars

 

Electronics Letters, V31, N7: 588-589

 

Journal

55

 

1995

 

"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars

 

Electronic Letters, V31, N13: 1102-1103

 

Journal

56

 

1995

 

"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra

 

Solid State Electronics, V38, N4: 905-908

 

Journal

57

 

1995

 

"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, v67, N11: 1541-1543

 

Journal

58

 

1995

 

 "InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars

 

Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.

 

Conference Proceedings

59

 

1995

 

"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

 

OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38

 

Journal

60

 

1993

 

“Luminescence Enhancement of  InGaAs/InP Surface Quantum Wells by Room –Temperature  Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars

 

Phys. Rev. Letters.

 

Journal

61

 

1994

 

“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars

 

Materials Res. Soc., 1994, 147-152

 

Conference Proceedings

62

 

1995

 

"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars

 

Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.

 

Journal

63

 

1996

 

"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645

 

Journal

 

 

 

 

 

 

 

 

 

64

 

1995

 

"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars

 

Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.

 

Conference Proceedings

65

 

1995

 

"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars

 

Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609

 

Journal

66

 

1995

 

"Characterization of InP Islands on InGaP/GaAs(001):  Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

 

Surface Science, Nov 1, 1995, V341 N1-2: 29-39

 

Journal

67

 

1996

 

"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars

 

Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527

 

Journal

68

 

1996

 

"Effect of the  Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.

 

Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.

 

Journal

69

 

1996

 

"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.

 

Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.

 

Journal

70

 

1995

 

“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.

 

Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.

 

Journal

71

 

1995

 

“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.

 

Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.

 

Journal

72

 

1995

 

“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.

 

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.

 

 

Journal

73

 

1995

 

“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.

 

JOM, Dec. 1995, V47, N12:

pp. 25-32.

 

Journal

74

 

1996

 

“Field emission from selectively regrown GaN pyramids,”  Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

IEEE, 1996, pp.152-153.

 

Conference Proceedings

75

 

1996

 

“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.

 

IEEE, 1996, pp. 60-61.

 

Conference Proceedings

76

 

1996

 

“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.

 

IEEE, 1996, pages 107-110.

 

Conference Proceedings

77

 

1996

 

“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

IEEE, 1996, pp. 157-158 Volume 2.

 

Conference Proceedings

78

 

1996

 

“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.

 

Materials Res. Soc, 1996,

pp. 165-170.

 

Conference Proceedings

79

 

1996

 

“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.

 

Materials Research. Society, 1996, pp. 63-74.

 

Conference Proceedings

80

 

1996

 

“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.

 

 Opt. Soc. America, 1996, p.  472.

 

 

81

 

1996

 

“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.

 

Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.

 

Journal

82

 

1996

 

“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

Electronics Letters, 14 March 1996, V32, N6: pp.  593-594.

 

Journal

83

 

1996

 

“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.

 

Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.

 

Journal

84 (a)

 

1996

 

“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.

 

Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.

 

Journal

84 (b)

 

1996

 

“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller,   D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars

 

Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149

 

Journal

85

 

1996

 

“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.

 

Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.

 

Journal

86

 

1996

 

“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.

 

IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.

 

Journal

87

 

1996

 

“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.

 

Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.

 

Journal

88

 

1996

 

“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

 Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.

 

Journal

89

 

1996

 

“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.

 

Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.

 

Journal

90

 

1996

 

“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

 

IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.

 

Journal

91

 

1996

 

“Very high breakdown voltage and large transconductance realized on GaN heterojunction  field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

 

Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.

 

Journal

92

 

1996

 

“Defect structure of metal-organic chemical vapor deposition-grown  epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

 

Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.

 

Journal

93

 

1996

 

“Radiative recombination lifetime measurements of InGaN single quantum      well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.

 

Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.

 

Journal

94

 

1996

 

“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.

 

Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.

 

Journal

95

 

1996

 

“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.

 

IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.

 

Journal

96

 

1996

 

“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by      ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.

 

Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.

 

Journal

97

 

1996

 

“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.

 

Journal

98

 

1996

 

“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

 

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651

 

Journal

99

 

1996

 

“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.

 

Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.

 

Journal

100

 

1996

 

“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.

 

Materials Res. Soc, 1996. pp. 133-138.

 

Conference Proceedings

101

 

1997

 

“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.

 

Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.

 

Journal

102

 

1997

 

“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.

 

Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp.  340-343.

 

Journal

103

 

1997

 

“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.

 

Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.

 

Journal

104

 

1997

 

“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.

 

Journal

105

 

1997

 

“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.

 

Journal

106

 

1997

 

“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.

 

Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.

 

Journal

107

 

1997

 

“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.

 

Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.

 

Journal

108

 

1997

 

“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.

 

Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.

 

Journal

109

 

1997

 

“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.

 

Solid State Communications, April 1997, V102, N4: pp. 297-300.

 

Journal

110

 

1997

 

“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.

 

Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.

 

Journal

111

 

1997

 

“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P.

 

Applied Physics Letters, 12 May 1997, V70, N19: pp. 2580-2582.

 

Journal

112

 

1997

 

”Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” Wu, Y.-F.; Keller, S.; Kozodoy, P.; Keller, B.P.; Keller, and DenBaars, S.P.

 

IEEE Electron Device Letters, June 1997, V18, N6: pp. 290-292.

 

Conference Proceedings

113

 

1997

 

“Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions,” Yu-Heng Jan; Fish, G.A.; Coldren, L.A.; DenBaars, S.P.

 

IEEE Photonics Technology Letters, July 1997, V9, N7: pp. 994-996.

 

Journal

114

 

1997

 

“Integration of semiconductor laser amplifiers with sampled grating tunable     lasers for WDM applications,” San-Liang Lee; Heimbuch, M.E.; Cohen, D.A.; Coldren, L.A.; and DenBaars, S.P.

 

IEEE Journal of Selected Topics in Quantum Electronics, April 1997, V3, N2: pp. 615-27.

 

Journal

115

 

1997

 

“Substrate engineering of 1.55 mu m lasers,” Abraham, P.; Black, A.K.; Margalit, N.M.; Hawkins, A.R.; and DenBaars, S.P.

 

IEEE, 1997. pp. 455-458.

 

Conference Proceedings

116

 

1997

 

“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature,” Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M.; Bowrs, J.E.and DenBaars, S.P.

 

Applied Physics Letters, 28 July 1997, V71, N4: pp. 425-427.

 

Journal

117

 

1997

 

“Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm     output-power at 10 Ghz,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Nguyen, N.X.; Mishra, U.K. and DenBaars, S.P.

 

IEEE Electron Device Letters, Sept. 1997, V18, N9: pp. 438-440.

 

Journal

118

 

1997

 

"MOCVD of Group III-Nitrides," S. DenBaars and S. Keller, Chapter 2,     Gallium Nitride Materials and Devices, J. Pankove and T. Moustakas,

 

Academic Press, 1197, V50, pp. 11-37.

 

Journal

119

 

1997

 

"Reconfigurable Optical Properties in InGaN/GaN quantum wells,”  I. Shmagi, J. Muth, R. Kolbas, M.P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars.

 

Appl. Physics Lett. V71 N1: pp. 1455.

 

Journal

120

 

1997

 

"Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD," M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars.

 

MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41.

 

Journal

121

 

1997

 

"Electron Beam Pumped MQW InGaN/GaN Laser," V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, S, DenBaars, M.D. Tiberi , T. George.

 

MRS Internet Journal of Nitride Research, Volume 2, Article Number 38.

 

Journal

122

 

1997

 

"Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices," S. DenBaars.

 

IEEE Special Issue on Optoelectronics, 1997.

 

Conference Proceedings

123.

 

1997

 

"MOCVD Growth and Properties of InGaN/Gan MQW," S. Keller, A. Abare, M. S. Minsky, D. H. Wu, M. P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U.K. Mishra, and S. DenBaars.

 

Proceeding of the International Conference on SiC and Group III - Nitrides, 1997

 

Conference Proceedings

124.

 

1997

 

“Role of defect diffusion in the InP damage profile” D.G. Yu, C.H. Chen, A.L. Holmes Jr., S.P. DenBaars, E.L. Hu.

 

J. Vac. Sci. Technol. B V15, N6

 

Journal

125.

 

1997

 

“Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics” S.P. DenBaars

 

Intl. J. of High Speen Electronics and Systems, V8, N2: pp. 265-282

 

Journal

126.

 

1997

 

“Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy” E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck.

 

J. Appl. Phys. , V82, N11: pp. 5472-5479

 

Journal

127.

 

1997

 

“InP islands on InGaP/GaAs (001): island separation distributions” S. Varma, C.M. Reaves, V. Bressler-Hill, S.P. DenBaars, W.H. Weinberg

 

Science Surface, V393, N1-3: pp. 24-33

 

Journal

128.

 

1997

 

“Well-width dependent dtudies of InGaN-GaN single –quantum wells using time-resolved photoluminescence  techniques” Chi-Kuang Sun, S. Keller, Tien-Lung Chiu, G. Wang, M.S. Minsky, J.E. Bowers, S.P. DenBaars

 

IEEE Journal of Selected Topics in Quantum Electronics, V3, N3: pp. 731-738

 

Journal

 

129.

 

1997

 

“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature” C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M.S. Minsky, S.P. DenBaars, J.E. Bowers

 

Applied Physics Letters, V71, N4: pp. 425-427

 

Journal

130.

 

1997

 

“Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures”  Z. Dziuba, J. antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra

 

J. Appl. Phys. , V82, N6: pp. 2996-3002

 

Journal

131.

 

1997

 

“Short-channel Al/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz.” Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. DenBaars, U.K. Mishra

 

Electronics Letters, V33, N20: pp. 1742-1743

 

Journal

132.

 

1997

 

“Compact InGaAsP/InP 1x2 optical switch based on carrier induced supression of modal interference” G.A. Fish, L.A. Coldren, S.P. DenBaars

 

Electronics Letters, V33, N22: pp. 1898-1900

 

Journal

133.

 

1997 

 

“Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements” J.F. Muth, A.J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters, V71, N18: pp. 2572-2574

 

Journal

134.

 

1997

 

“In/sub x/Ga/sub 1-x/N/Al/sub y/Ga/sub 1-y/N violet light emitting dioded with reflective p-contacts for high single sided light extraction” P.M. Menz, P. Kellawon, R. Van Roijen, P. Kozodoy, S. DenBaars

 

Electronics Letters, V33, N24: pp. 2066-2068

 

Journal

135.

 

1998

 

“High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells” S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V72, N13: pp. 1623-1625

 

Journal

136.

 

1998

 

“Spiral Growth of InGaN Nanoscale Islands on GaN” S. Keller, U.K. Mishra, S.P. DenBaars, W. Seifert.

 

Japanese J. Appl. Phys. V37 Part 2, No. 4B: pp. 431-434

 

Journal

137.

 

1998

 

“Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition” P.J. Hansen, Y.E. Strausser, A.N. Erickson, E.J. Tarsa, P. Kozodoy, E.G. Brazel, J.P. Ibbetson, U. Mishra, V. Narayanamurti, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters V72, N 18: pp. 2247-2249

 

Journal

138.

 

1998

 

“Growth and properties of InGaN nanoscale islands on GaN” S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U. K. Mishra, S.P. DenBaars, W. Seifert

 

Journal of Crystal Growth V189, N190: pp. 29-32

 

Journal

139.

 

1998

 

“Dislocation generation in GaN heteroepitaxy” X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck

 

Journal of Crystal Growth V189, N190: pp. 231-243

 

Journal

140.

 

1998

 

“MOVPE growth and characterization of Mg-doped GaN” P.Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra

 

Journal of Crystal Growth V195: pp. 265-269

 

Journal

141.

 

1998

 

“Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” H. Marchand, J.P. Ibbetson, P.T. Fini, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

Journal of Crystal Growth V195: pp. 328-332

 

Journal

142.

 

1998

 

“Cleaved and Etched Facet Nitride Laser Diodes” A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller, J.S. Speck, J.E. Bowers, U.K. Mishra, L.A. Coldren, S.P. DenBaars

 

IEEE Journal of Selected Topics in Quantum Electronics V4, N3:  pp. 505-509

 

Journal

143.

 

1998

 

“Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays” R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra

 

Applied Physics Letters V73, N3: pp. 405-407

 

Journal

144.

 

1998

 

“Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes” S. Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U.K. Mishra, L.A. Coldren, D.R. Clarke, S.P. DenBaars

 

Applied Physics Letters V73, N4: pp. 496-498

 

Journal

145.

 

1998

 

“Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells” T.J. Schmidt, Y-H Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V73, N5: pp. 560-562

 

Journal

 

146.

 

1998

 

“Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V73, N8: pp. 1128-1130

 

Journal

147.

 

1998

 

“The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor depostion” P. Fini, X. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, J.S. Speck

 

Japanese J. Appl. Phys. V37, N8: pp. 4460-4466

 

Journal

148.

 

1998

 

“Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” H. Marchand, X.H. Wu, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra

 

Applied Physics Letters V73, N6: pp. 747-749

 

Journal

149.

 

1998

 

“Electrical characterization of GaN p-n junctions with and without threading dislocations”  P. Kozodoy, J.P. Ibbetson, H. Marchand, P.T. Fini, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra

 

Applied Physics Letters V73, N7: pp. 975-977

 

Journal

150.

 

1998

 

“Ridge Waveguide Sampled Grating DBR Lasers with 22-nm Quasi-Continuous Tuning Range” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren

 

IEEE Photonics Technology Letters V10, N9: pp. 1211-1213

 

Journal

151.

 

1998

 

“ ‘S-shaped’temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells”  Y-H Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V73, N10: pp. 1370-1372

 

Journal

152.

 

1998

 

“Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures” S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars

 

Applied Physics Letters V73, N14: pp. 2006-2008

 

Journal

153.

 

1998

 

“High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts” C-H Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E.L. Hu, S.P. DenBaars, U.K. Mishra, Y. Wu

 

Applied Physics Letters V73, N21: pp. 3147-3149

 

Journal

154.

 

1998

 

“Excitation energy-dependent optical characteristics of InGaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V73, N22: pp. 3181-3183

 

Journal

155.

 

1998

 

“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper

 

Applied Physics Letters V73, N26: pp.3887-3889

 

Journal

156.

 

1998

 

“Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile” G.A. Fish, B. Mason, S.P. DenBaars, L.A. Coldren

 

J. Crystal Growth, V186, N1-2: pp. 1-7

 

Journal

157.

 

1998

 

“Optical properies of GaAs confined in the pores of MCM-41” V. I. Srdanov, I. Alxneit, G.D. Stucky, C.M. Reaves, S.P. DenBaars

 

J. Physical Chemistry, V102, N18: pp. 3341-3344

 

Journal

158.

 

1998

 

“Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells” X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters, V72, N6: pp. 692-694

 

Journal

159.

 

1998

 

“High Al-content AlGaN/GaN MODFET’s for ultrahigh performance” Y.-F Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. DenBaars, U.K. Mishra

 

IEEE Electron Device Letters, V19, N2: pp. 50-53

 

Journal

160.

 

1998

 

“Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects” G.A. Fish, L.A. Coldren, S.P. DenBaars

 

IEEE Photonics Technology Letters, V10, N2: pp. 230-232

 

Journal

161.

 

1998

 

“Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence” M.S. Minsky, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S.P. DenBaars

 

Applied Physics Letters, V72, N9: pp. 1066-1068

 

Journal

162.

 

1998

 

“Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

MRS Internet Journal of Nitride Semiconductor Research, V3

 

Journal

163.

 

1998

 

“Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering” A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B.Stephanson, P. Fini, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters, V72, N23: pp. 2972-2974

 

Journal

164.

 

1998

 

“Catastrophic optical damage in GaInN multiple quantum wells” D.A. Cohen, T. Magalith, A.C. Abare, M.P. Mack, L.A. Coldren, S.P. DenBaars, D.R. Clarke

 

Applied Physics Letters, V72, N25: pp. 3267-3269

 

Journal

165.

 

1998

 

“Improvement of GaN-based laser diode facets by FIB polishing” M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars

 

Electronics Letters, V34, N13: pp. 1315-1316

 

Journal

166.

 

1998

 

“Tunable sample-grating DBR lasers with integrated wavelength monitors” B. Mason, S.P. DenBaars, L.A. Coldren

 

IEEE Photonics Technology Letters, V10, N8: pp. 1085-1087

 

Journal

167

 

1998

 

“Compact, 4x4 InGaAsP-InP optical crossconnect with a scaleable architecture” G.A. Fish, B. Mason, L.A. Coldren, S.P. DenBaars

 

IEEE Photonics Technology Letters,  V10, N9: pages 1256-1258

 

Journal

168.

 

1998

 

“Pump-probe spectoscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN” T.J. Schmidt, Y.-H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters, V73, N13: pp. 1892-1894

 

Journal

169.

 

1998

 

“Substrate reactivity and ‘controlled contamination’in metalorganic chemical vapor deposition of GaN on sapphire” Y. Golan, P. Fini, S.P. DenBaars, J.S. Speck

 

Japanese Journal of Applied Physics, V37, Pt.1, N9A: pp. 57-65

 

Journal

170.

 

1998

 

“A first look at AlGaN/GaN HBTs” L. McCarthy, P. Kozodoy, M. Rodwell, S.P. DenBaars, U.K. Mishra

 

Compound Semiconductor Magazine, V4, N8

 

Magazine

171.

 

1998

 

“Optical properties of InGaN/GaN quantum wells with Si-doped barriers” M. Minsky, S. Chichibu, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, S.P. DenBaars

 

Japanese Journal of Applied Physics, V37, Pt. 2 ,N11B: pp. 1362-1364

 

Journal

172.

 

1998

 

“Stimulated emission characteristics of InGaN/GaN multiple quantum wells:Excitation length and excitation density”

 

Applied Physics Letters, V73, N25: pp. 3689-3691

 

Journal

173.

 

1998

 

“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper

 

Applied Physics Letters, V73, N26: pp. 3887-3889

 

Journal

174.

 

1998

 

“Gallium nitride based materials and their application for light emitting devices” S. Keller, S.P. DenBaars

 

Current Opinion in Solid State & Materials Science, V3, N1: pp. 45-50

 

Journal

174a.

 

1998

 

Chapter 2 pp.11-35 “Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides”S. P. DenBaars, S. Keller

 

 

J. I. Pankove, T.D. Moustakas Semiconductors and Semimetals, V50: Gallium Nitride (GaN) I

Academic Press: San Diego

 

Book Chapter

175.

 

1999

 

“Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN” G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P.H. Fuoss, P. Fini, S.P. DenBaars, J.S. Speck

 

MRS Bulletin/Jan.: pp. 21-25

 

Journal

176.

 

1999

 

“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleischer, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters V74, N10: pp. 1460-1462

 

Journal

177.

 

1999

 

“Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” S.J. Rosner, G. Girolami, H. Marchand, P.T. Fini, J.P. Ibbetson, L. Zhao, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters V74, N14: pp. 2035-2037

 

Journal

178.

 

1999

 

“Dislocation mediated surface morphology of GaN” B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck

 

Journal of Applied Physics V85, N9: pp. 6470-6476

 

Journal

179.

 

1999

 

“Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren

 

IEEE Photonics Technology Letters V11, N6: pp. 638-640

 

Journal

 

180.

 

1999

 

“Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells’  S.Fleisher, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars, J. Bowers

 

Ultrafast Electonics and Optoelectronics:

Snow Mass, CO April 12-16

 

 

Conference Proceedings

181.

 

1999

 

“Near-field scanning optical microscopy of indium gallium nitride multple-quantum-well laser diodes” D. Young, M. Mack, A. Abare, M. Hansen, L. Coldren, S. DenBaars, E. Hu , D. Awschalom

 

Applied Physics Letters; V74, N16

 

Journal

182.

 

1999

 

“Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings” A. Abare, M. hanson, J. Speck, L. coldren, s. DenBaars

 

Device Research Conferecne, paper no. VII.B-6; Santa Barbara, CA

 

Conferece Proceedings

183.

 

1999

 

“Indium tin oxide contacts to gallium nitride optoelectronic devices” T. Margalith, O. Buchinsky, D. Cohen, A. Abare, M. Hansen, S. DenBaars, L. Coldren

 

Applied Phyics Letters; V7, N26

 

Journal

184.

 

1999

 

“Improved characterstics of InGaN multi-quantum well laser diodes grown on laterally overgrown GaN on sapphire” M, Hanson, P. Fini, L. Zhao, A. Abare, J. Speck, L. coldren, S. DenBaars

 

Elecronic Materials Conf.; Santa Barbara, CA – post deadline paper Session R, Electronic Materials Conf., June 30 – July 2, 1999

 

Conference Proceeding

185.

 

1999

 

High-performance (Al,Ga)N-based solar-blind ultraviolet p-I-n detectors on laterally epitaxially overgrown GaN, G. Parish, S. Keller, P. Kozodoy, J.P. Ibbitson, H. Marchand, P.T. Fini, S.B. Fleischer, E.J. Tarsa , S.P. DenBaars, and U.K. Mishra.

 

Applied Phyics Letters; V75, N2: pp. 247-249.

 

Journal

186.

 

1999

 

High-quality coalescense of laterally overgrown GaN stripes on GaN/sapphire seed layers, P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U. K. Mishra and J.S. Speck.

 

Applied Phyics Letters; V75, N12: pp. 1706-1708.

 

Journal

187.

 

1999

 

Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings” A.C. Abare, M. Hansen, J. S. Speck, S. P. DenBaars and L. A. Coldren.

 

Electronics Letters, Sept. 2, 1999, V35, N18: pp. 205-206.

 

Journal

188.

 

1999

 

“Effect of AlGaN/GaN strained layer superlattice period of InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars

 

Phys. Stat. Sol., V176: pp. 59-62

 

Journal

189.

 

1999

 

“Optical Spectroscopy of InGaN/GaN quantum wells” E. Berkowiz, D. Gershoni, G. Bahir, a. Abare, S DenBaars, L. Coldren

 

Phys. Stat. Sol. 216,291

 

Journal

 

190.

 

1999

 

“Embedded delelctric grating distributed feedback nitride laser diode” A. Abare, M. Hansen, J. speck, L. coldren, S. DenBaars

 

International conference on nitride Semiconductros, Paper no. WePO61: Montpeliier, France

 

Conference Proceeding

191.

 

1999

 

“Photoresponse and physical properties of photoconductor and photovoltaic GaN based UV detectors” V. Garber, G. Bahit, J. Salzman, A. Abare, S. DenBaars, L. coldren

 

International conference on Niride Semiconductoes: montpellier, France- paper no. WePO35

 

Conference Proceeding

192.

 

1999

 

“Monolithic integration of a widely tunable laser and an electro-absorptoin modulator” B. Mason, G. Fish, S. DenBaars, L. Coldren

 

Integrated Photonic Research 99’; Santa Barbara, CA-paper no. RME2

 

Conference Proceeding

193.

 

1999

 

“Compact, 1.55 µm spot-size converters for InP based photonic integrated circuits” G. Fish, B. mason, L. coldren, s. DenBaars

 

Integrated Photonics Research Conference ’99; santa Barbara, CA-paper no. RWD4

 

Conference Proceedings

194.

 

1999

 

“Monolithic InP Optical Crossconnects: 4x4 and beyond” G. Fish, B. Mason, L. coldren, S. DenBaars

 

Photonics in Switching; Santa Barbara, CA-paper no. JWB2

 

Conference Proceedings

195.

 

1999

 

“Transparent contact to p-GaN: indium tin oxide/titanium nitride” O. Buchinsky, T. Margalith, D. Cohen, A. Abare, S. DenBaars, L. coldren

 

LEOs Summer Topicals; San Diego, CA-paper no. FBI 3

 

Conference Proceedings

196.

 

1999

 

“Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells” C. Sun, J. lLiang, C. Stanton, A. Abare, L. coldren, S. DenBaars

 

Applied Physics Letters; V75:N9

 

Journal

197.

 

1999

 

“Optical Crossbar Switches on InP” G. Fish, B. Mason, L. coldren, S. DenBaars

 

LEOS ’99; San Francisco, CA- paper no. WC1

 

Conference Proceeding

198.

 

1999

 

“Improved Characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao, A. Abare, L. Coldren, J. Speck, S. DenBaars

 

Materials Research Society Meeting; Boston, MA-paper no. W1 3

 

Journal

199.

 

1999

 

“Optical properties of InGaN quantum wells” S.F. Chichibu, A.C. Abare, M.P. Mack,M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Soto, S. Nakamura

 

Materials Science and Engineering B59, pp. 298-306

 

Journal

200.

 

1999

 

“High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: influence of Si-Doping concentration” Y.-H. Cho, F. Fedler, R.J. Hauenstein, G.H. Park, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Journal of Applied Physics, V85, N5: pp. 3006-3008

 

Journal

201.

 

1999

 

“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleisher, J.S. Speck, S.P. DenBaars, T. Deguchi, T. Soto, S. Nakamura

 

Applied Physics Letters, V74, N10: pp. 1460-1462

 

Journal

202.

 

1999

 

“Low-temperature scanning tunneling microscope-induced luminescsence of an InGaN/GaN multiquantum well” S. Evoy, C.K. Harnett, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters, V74, N10: pp. 1457-1459

 

Journal

203.

 

1999

 

“Structural and optical properties of GaN laterally overgrown on Si(111) by metal organic vapor deposition using an AlNbuffer layer” H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

MRS Internet Journal, V4S1

 

Journal

204.

 

1999

 

“Study of temperature effects on loss mechanisms in 1.55m laser diodes with In/sub 0.81/Ga/sub 0.19/P electron stopper layer” P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers

 

Semiconductor Science and Technology, V14, N5: pp. 419-424

 

Journal

205.

 

1999

 

“Observation of growth modes during metal-organic chemical vapor deposition of GaN” G.B. Stephenson, J.A. Eastman, C. Thompson, O. Auciello, L.J. Thompson, A, Munkholm, P. Fini, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters, V74, N22: pp. 3326-3328

 

Journal

206.

 

1999

 

“Ultrafast electron dynamics study of GaN” C.-K. Sun, Y.-L. Huang, S. Keller, U.K. Mishra, S.P. DenBaars

 

Physical Review B, V59, N21: pp. 13535-13538

 

Journal

207.

 

1999

 

“High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S, Speck

 

Applied Physics Letters, V74 N23: pp. 3528-3530

 

Journal

208.

 

1999

 

“Enhanced Mg doping efficiency in Al/sub 0.2/Ga/sub 0.8/N/GaN superlattices” P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra

 

Applied Physics Letters, V74, N24: pp. 3681-3683

 

Journal

209.

 

1999

 

“AlGaN/GaN heterojunction bipolar transistor” L.S. McCarthy, P. Kozodoy, M.J. Rodwell, S.P. DenBaars, U.K. Mishra

 

IEEE Electron Device Letters, V20, N6: pp. 277-279

 

Journal

210.

 

1999

 

“AlGaN/GaN HBTs using regrown emitter” J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, U.K. Mishra

 

Electronics Letters, V35, N19:

pp. 1671-1673

 

Journal

211.

 

1999

 

“Surface structure of GaN(0001) in the chemical vapor deposition environment” A. Munkholm, G.B. Stephenson, J.A. Eastman, C. Thompson, P. Fini, J.S. Speck, O. Auciello., P.H. Fuoss, S.P. DenBaars

 

Physical Review Letters, V83, N4: pp. 741-744

 

Journal

212.

 

1999

 

“Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies” H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh, S.P. DenBaars

 

IEEE Journal of Quantum Electronics, V35, N10: pp. 1483-1490

 

Journal

213.

 

1999

 

“Coupling of InGaN quantum-well photoluminescence to silver surface plasmons” I. Gontijo, M. Boroditsky, E. Yablonovich, S. Keller, U.K. Mishra, S.P. DenBaars

 

Physical Review B, V60, N16: pp. 11564-11567

 

Journal

214.

 

1999

 

“Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Ventury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

Journal of Applied Physics, V86, N8: pp. 4520-4526

 

Journal

215.

 

1999

 

“Polarization-enhanced Mg doping of AlGaN/GaN superlattices” P. Kozodoy, Y.P. Smorchkova, M. Hansen., H. Xing, S.P. DenBaars, U.K. Mishra, A.W. Saxler, R. Perrin, W.C. Mitchel

 

Applied Physics Letters, V75, N16: pp. 2444-2446

 

Journal

216.

 

1999

 

“Structural and optical characteristics of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells with different In compositions” Y.-H. Kwon, G.H. Gainer, S. Bidnyk, Y.H. Cho, J.J. Song, M. Hansen, S.P. DenBaars

 

Applied Physics Letters, V75, N17: pp. 2545-2547

 

Journal

217.

 

1999

 

“GaN-based FETs for Microwave Power Amplification” Y.F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, U.K. Mishra

 

IEICE Trans. Electron., VE82-C N11: pp. 1895-1905

 

Journal

218.

 

1999

 

“Femtosecond Z-scan measurement of GaN”   Y.-L. Huang, C.-K. Sun, J.-C Liang, S. Keller, M.P. Mack, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters, V75, N22: pp. 3524-3526

 

Journal

219.

 

1999

 

“Large interband second-order susceptibilities in In/sub x/Ga/sub 1-x/N/GaN quantum wells” H.Schmidt, A.C, Abare, J.E.Bowers, S.P. DenBaars, A. Imamoglu,

 

Applied Physics Letters, V75, N23: pp. 3611-3613

 

Journal

220.

 

1999

 

“Thermal conductivity of lateral epitaxial overgrown GaN films” C.-Y Luo, H. Marchand, D.R. Clarke, S.P. DenBaars

 

Applied Physics Letters, V75, N26: pp. 4151-4153

 

Journal

221.

 

1999

 

“Thermal annealing of InGaN/GaN strained-layer quantum wells” M.C.-Y. Chan, K.-O. Tsang, E.H. Li, S.P. DenBaars

 

MRS Internet Journal, V4S1, G6.25

 

Journal

222.

 

1999

 

“Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process” H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

MRS Internet Journal, V4S1, G4.5

 

Journal

223.

 

1999

 

“Spectroscopic studies in InGaN quantum wells” S.F. Chichibu, T. Sota, K. Wada., S.P. DenBaars, S. Nakamura

 

MRS Internet Journal, V4S1, G2.7

 

Journal

224.

 

1999

 

“Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells” Y.-H. Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

MRS Internet Journal, V4S1, G2.4

 

Journal

225.

 

1999

 

“Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells” Y.-H. Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

MRS Internet Journal,V4S1, G6.44

 

Journal

226.

 

1999

 

“Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells” T.J. Schmidt, S. Bidnyk, Y.-H. Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

MRS Internet Journal, V4S1, G6.54

 

Journal

227.

 

1999

 

“Scanning tunneling microscope-induced luminescence of GaN at threading dislocations” S. Evoy, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars

 

Journal of Vacuum Science & Technology B, V17, N1: pp. 29-32

 

Journal

228.

 

2000

 

“Sims investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlXGa 1-X N,”  G. Parish, S. Keller, S.P. DenBaars and U.K. Mishra

 

Journal of Electronic Materials, V29, N1, pp. 15-20.

 

Journal

229.

 

2000

 

“Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray defraction” P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J.S. Speck

 

Journal of Crystal Growth, V209: pp. 581-590

 

Journal

230.

 

2000

 

“Characterization of an AlGaN/GaN two-dimensional electron gas structure” A. Saxler, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck

 

Journal of Applied Physics, V87, N1: pp. 369-374

 

Journal

231.

 

2000

 

“Depletion region effects in Mg-doped GaN” P. Kozodoy, S.P. DenBaars, U.K. Mishra

 

Journal of Applied Physics, V87, N2: pp. 770-775

 

Journal

232.

 

2000

 

“Improved characteristics of InGaN multiple –quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao. A.C. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars

 

Applied Physics Letters, V76, N5: pp. 529-531

 

Journal

233.

 

2000

 

“Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

Applied Physics Letters, V76, N6: pp. 718-720

 

Journal

234.

 

2000

 

“Heavy doping effects in Mg-doped GaN” P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel

 

Journal of Applied Physics, V87, N4: pp. 1832-1835

 

Journal

235.

 

2000

 

“Epitaxially-grown GaN junction field effect transistors” L. Zhang, L.F. Lester, A.G. Baca, R.J. Shul, P.C. Chang, C.G. Willison, U.K. Mishra, S.P. DenBaars, J.C. Zolper

 

IEEE Transactions on Electron Devices, V47, N3: pp. 507-511

 

Journal

236.

 

2000

 

“Linear and nonlinear optical properties of In/sub x/Ga/sub 1-x/N/GaN heterostructures” Y.H. Cho, T.J. Schmidt, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

 

Physical Review B, V61, N11: pp. 7571-7588

 

Journal

237.

 

2000

 

“Distributed feedback laser diodes employing embedded dielectric gratings located above the active region” A.C. Abare, S.P. DenBaars, L.A. Coldren

 

IEICE Trans. Electron, VE83-C, N4: pp. 560-563

 

Journal

238.

 

2000

 

“Transient processes in AlGaN/GaN heterostructures field effect transistors” S.L. Rumyantsev, M.S. Shur, R. Gaska, X. Hu, A. Khan, G. Simin, J. Yang, N. Zhang, S.P. DenBaars, U.K. Mishra

 

Electronics Letters, V36, N8: pp. 757-759

 

Journal

239.

 

2000

 

“Measured and calculated radiative lifetime and optical absorption of In/sub x/Ga/sub 1-x/ N/GaN quantum structures” E. Berkowitz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C, Abare, S.P. DenBaars, L.A. Coldren

 

Physical Review B, V61, N16: pp. 10994-11008

 

Journal

240.

 

2000

 

“High voltage operation (>80V) of GaN bipolar junction transistors with low leakage” J.B. Limb, H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, U.K. Mishra 

 

Applied Physics Letters, V76, N17: pp. 2457-2459

 

Journal

241.

 

2000

 

“Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies” Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J. Singh

 

Journal of Applied Physics, V87, N11: pp. 7981-7987

 

Journal

242.

 

2000

 

“Channeling as a mechanism for dry etch damage in GaN” E.D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S.P. DenBaars, L.A. Coldren, U.K. Mishra, E.L. Hu

 

Applied Physics Letters, V76, N26: pp. 3941-3943

 

Journal

243.

 

2000

 

In Situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN” P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, M.V. R. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters, V76, N26: pp. 3893-3895

 

Journal

244.

 

2000

 

“Ultrafast optical characterization of carrier capture times in In/sub x/Ga/sub 1-x/ N multiple quantum wells” U. Ozgur, M.J. Bergmann, H.C. Casey, Jr., H.O. Everitt, A.C. Abare, S. Keller, S.P. DenBaars

 

Applied Physics Letters, V77, N1: pp. 109-111

 

Journal

245.

 

2000

 

“Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars

 

Mat. Res. Soc. Symp., V595, W1.4.1-W1.4.6

 

Journal

246.

 

2000

 

“Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes” A. Hierro, D. Kwan, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars

 

Applied Physics Letters, V76, N21: pp. 3064-3066

 

Journal

247.

 

2000

 

“Transition between the 1x1 and (√3x2√3)R30 surface structures of GaN in the vapor-phase environment” A. Munkholm, C. Thompson, G. B. Stephenson, J.A. Eastman, O. Auciello, P. Fini, J.S. Speck, S.P. DenBaars

 

Physica B, V283: pp. 217-222

 

Journal

247a.

 

2000

 

Chapter 1 pp. 1-25 “Basic Physics & Materials Technology of GaN LEDs and LDs”Steven P. DenBaars

 

S. Nakamura, S.F. Chicibu Introduction to Nitride SemiconductorBlue Lasers and Light Emitting Diodes.

Taylor & Francis: London

 

Book Chapter

248.

 

2000

 

“Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, U.K. Mishra

 

Applied Physics Letters, V77, N2: pp. 250-252

 

Journal

249.

 

2000

 

“In situ studies of the effect of silicon on GaN growth modes” A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciello, M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars

 

Journal of Crystal Growth, V.221, pp. 98-105

 

Journal

250.

 

2000

 

“Layer by layer growth of GaN induced by silicon” A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, V77 N11, pp. 1626-1628

 

Journal

251.

 

2000

 

“Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy” B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J. S. Speck

 

Applied Physics Letters, V77 N18, pp. 2885-2887

 

Journal

252.

 

2000

 

“Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel

 

Japanese Journal of Applied Physics, V39 N10B (part 2), pp. L1023-L1025

 

Journal

253.

 

2000

 

“Dislocation reduction in GaN films through selective island growth of InGaN” S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V77 N17, pp. 2665-2667

 

Journal

254.

 

2000

 

“Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates”

B. Moran, M. Hansen, M. D. Craven, J. S. Speck, S. P. DenBaars

 

Journal of Crystal Growth, V221, pp. 301-304

 

Journal

255.

 

2000

 

“Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure”  S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck

 

Journal of Applied Physics, V88, N11, pp. 6583-6588

 

Journal

256.

 

2001

 

“Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes”  S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura

 

Physica Status Solidi A, V183, pp. 91-98

 

Journal

257.

 

2001

 

“Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells”  G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars

 

Applied Physics Letters, V78, N5, pp. 640-642

 

Journal

258.

 

2001

 

“Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells”  Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars

 

Applied Physics Letters, V78, N7, pp. 928-930

 

Journal

259.

 

2001

 

“Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells”  C.-K. Sun, Y.-K. Huang, J.-C. Liang, A. Abare, S. P. DenBaars

 

Applied Physics Letters, V78, N9, pp. 1201-1203

 

Journal

260.

 

2001

 

“Spin coherence and dephasing in GaN”  B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. E. Grimaldi, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu, D. D. Awschalom

 

Physical Review B, V63, pp. 121201-1-121201-4

 

Journal

261.

 

2001

 

“Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications”  A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, E. L. Hu

 

Applied Physics Letters, V78, N13, pp. 1945-1947

 

Journal

262.

 

2001

 

“GaN HBT:  Toward an RF Device”  L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra

 

IEEE Transactions on Electron Devices, V48, N3, pp. 543-551

 

Journal

263.

 

2001

 

“Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB”  S. Keller, Y.-F. Wu, G. Parish, B. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra

 

IEEE Transactions on Electron Devices, V48, N3, pp. 552-559

 

Journal

264.

 

2001

 

“Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors”  L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, U. K. Mishra 

 

Applied Physics Letters, V78, N15, pp. 2235-2237

 

Journal

265.

 

2001

 

“Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors”

 

Journal of Applied Physics, V89 N12, pp. 7846-7851

 

Journal

266.

 

2001

 

“Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN”  E. D. Haberer, C. H. Chen, M. Hansen, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu

 

J. Vac. Sci. Technol.  B, V19 N3, pp. 603-608

 

Journal

267.

 

2001

 

“Channeling as a mechanism for dry etch damage in GaN” E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. DenBaars, L. Coldren, U. Mishra, E. L. Hu

 

Appl. Phys. Lett., V76 N26, pp. 3941-3943

 

Journal

268.

 

2001

 

“Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy”  C. K. Sun, S. W. Chu, S. P. Tai, S. Keller, A. Abare, U. K. Mishra, S. P. DenBaars

 

Scanning, May-June 2001, V.23 N3, pp. 182-192

 

Magazine

269.

 

2001

 

“Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure”  Z. Dziuba, M. Gorska, J. Antoszewski, A. Babinski, P. Kozodoy, S. Keller, B. Keller, S. P. DenBaars, U. K. Mishra

 

Applied Physics A- Materials Science & Processing , V72 N6, pp. 691-698

 

Journal

270.

 

2001

 

“Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa 1-xN/GaN double heterostructures”  C. K. Choi, B. D. Little, Y. H. Kwon, J. B. Lam, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars

 

Physical Review B, V6319 N19, pp. U262-U267

 

Journal

271.

 

2001

 

“Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells”  M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars

 

Semiconductor Science and Technology, V16 N5, pp. 406-412

 

Journal

272.

 

2001

 

“Effect of growth termination conditions of the performance of AlGaN/GaN high electron mobility transistors”  S. Keller, R. Ventury, G. Parish, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V78 N20, pp. 3088-3090

 

Journal

273.

 

2001

 

“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN”  S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V78 N19, pp. 2876-2878

 

Journal

274.

 

2001

 

“Selective area mass transport reqrowth of gallium nitride”  S. Heikman, S. P. DenBaars, U. K. Mishra

 

Japanese Journal of Applied Physics, part 1, V40 N2A, pp. 565-566

 

Journal

275.

 

2001

 

“Investigations of chemical vapor deposition of GaN using synchotron radiation”  C. Thompson, G. B. Stephenson, J. A. Eastman, A. Munkholm, O. Auciello, M. V. R. Murty, P. Fini, S. P. DenBaars, J. S. Speck

 

Journal of the Electrochemical Society, V148 N5, pp. C390-C394

 

Journal

276.

 

2001

 

“Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states”  C. K. Sun, J. C. Liang, X. Y. Yu, S. Keller, U. K. Mishra, S. P. DenBaars

 

Applied Physics Letters, V78 N18, pp. 2724-2726

 

Journal

277.

 

2001

 

“Gallium nitride based transistors”  H. Xing, S. Keller, Y. F. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra

 

Journal of Physics-Condensed Matter, V13 N32, pp. 7139-7157

 

Journal

278.

 

2001

 

“Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures”  P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Gandjean, J. Massies

 

Physical Review B, V64 N11, pp. U459-U466

 

Journal

279.

 

2001

 

“AlGaN/AlN/GaN high-power microwave HEMT”   L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Ke.ller, S. P. DenBaars, U. K. Mishra

 

IEEE Electron Device Letters, V22 N10, pp. 457-459

 

Journal

280.

 

2001

 

“Infrared and Raman-scattering studies in a single-crystalline GaN nanowires”  H. L. Liu, C. C. Chen, C. T. Chia, C. C. Yeh, C. H. Chen, M. Y. Yu, S. Keller, S. P. DenBaars

 

Chemical Physical Letters, Vol. 345 No. 3-4, pp. 245-251

 

Journal

281.

 

2001

 

“Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck

 

Journal of Crystal Growth, V233 N4, pp. 709-716

 

Journal

282.

 

2001

 

“Influence of growth temperatures and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, W. C. Mitchel

 

Japanese Journal of Applied Physics, V40 N11, pp.6235-6238

 

Journal

283.

 

2001

 

“Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates” T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, S. P. DenBaars

 

Journal of Applied Physics, V79 N18, pp. 2907-2909

 

Journal

284.

 

2001

 

“Band gap bowing and exciton localization in  strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy”  S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura

 

Applied Physics Letters, V79 N22, pp. 3600-3602

 

Journal

285.

 

2001

 

“Capture kinetics of electron traps in MBE-grown n-GaN”A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel

 

Physical Status Solidi B, V228, N1, pp. 309-313

 

Journal

286.

 

2001

 

“Indium –surfectant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition”  S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V79 N21, pp. 3361-3363

 

Journal

287.

 

2001

 

“Generation of coherent acoustic phonons in strained GaN thin films” Y. K. Huang, G. W. Chern, C. K. Sun, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars

 

Applied Physics Letters, V79 N20, 3361-3363

 

Journal

288.

 

2001

 

"AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy" I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra

 

Journal of Applied Physics, Vol. 90 No. 10, pp. 5196-5201

Correction/Addition Vol. 91 No. 7, p. 4780

 

Journal

289.

 

2001

 

“Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN” A. Hierro, M. Hansen, J. J. Boeckl, L. Zhao, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel

 

Physica Status Solidi B, Vol. 228 No. 3, pp. 937-946

 

Journal

290.

 

2001

 

“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, B. Moran, R. Coffie, S. P. DenBaars, U. K. Mishra

 

Physica Status Solidi A, Vol. 188 No. 1, pp. 355-358

 

Journal

291.

 

2001

 

“Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate” G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra

 

Physica Status Solidi A, Vol. 188 No. 1, pp. 297-300

 

Journal

292.

 

2001

 

“Kilovolt AlGaN/GaN HEMTs as switching devices” N. Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma

 

Physica Status Solidi A, Vol. 188 No. 1, pp. 213-217

 

Journal

293.

 

2001

 

“Indium surfectant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra

 

Physica Status Solidi A, Vol. 188 No. 2, pp. 775-778

 

Journal

294.

 

2001

 

“Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes” M. Hansen, L. F. Chen, J. S. Speck, S. P. DenBaars

 

Physica Status Solidi B, Vol. 228 No. 2, pp. 353-356

 

Journal

295.

 

2001

 

“Time-resolved photoluminescence of  InxGa1-xN/GaN multiple quantum well structures:  Effect of Si doping in the barriers” C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars

 

Physical Review B, Vol. 6424 No. 24, pp. 5339:U608-U613

 

Journal

296.

 

2001

 

“Photoelectrochemical undercut etching for fabrication of GaN microelectrochemical systems” A. R. Stonas, N. C. MacDonald, K. L. Turner, S. P. DenBaars, E. L. Hu

 

Journal of Vacuum Science & Technology B, Vol. 19 No. 6, pp. 2838-2841

 

Journal

297.

 

2002

 

“Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition” E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Frietas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra

 

Physical Review B, Vol. 6508 No. 8, pp. U344-U353

 

Journal

298.

 

2002

 

“Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors” L. S. McCarthy, I. P. Smorchkova, P. Fini, M. J. W Rodwell, J. Speck, S. P. DenBaars, U. K. Mishra

 

Electronics Letters, Vol. 38 No. 3, pp. 144-145

 

Journal

299.

 

2002

 

“Systematic characterization of Cl-2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs” D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, U. K. Mishra

 

IEEE Electron Device Letters, Vol. 23 No. 2, pp. 76-78

 

Journal

300.

 

2002

 

“Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy” A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. A. Ringel

 

Applied Physics Letters, Vol. 80 No. 5, pp. 805-807

 

Journal

301.

 

2002

 

“Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN” M.  Hansen, P. Fini, M. Craven, B. Heying, J. S. Speck , S. P. DenBaars

 

Journal of Crystal Growth, Vol. 234, pp. 623-630

 

Journal

302.

 

2002

 

“Mg-rich precipitates in the p-type doping of InGaN-based laser diodes” M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, Vol. 80 No. 14, pp. 2469-2471

 

Journal

303.

 

2002

 

“GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design” S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, Vol. 80 No. 23, pp. 4387-4389

 

Journal

304.

 

2002

 

“Chemical mechanical polishing of gallium nitride” P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars, D. R. Clarke

 

Electrochemical and Solid-State Letters, Vol. 5 No. 8, pp. 61-64

 

Journal

305.

 

2002

 

“Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar

 

Materials Science & Engineering B, Vol. 93, pp. 39-48

 

Journal

306.

 

2002

 

“Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy” P. Waltereit, M. D. Craven, S. P. DenBaars, J. S. Speck

 

Journal of Applied Physics, Vol. 92 No. 1, pp. 456-460

 

Journal

307.

 

2002

 

“Femtosecond dynamics of exciton bleaching in bulk GaN at room tempurature” Y. C. Huang, G. W. Chern, K. H. Lin, J. C. Liang, C. K. Sun, C. C. Hsu, S. Keller, S. P. DenBaars

 

Applied Physics Letters, Vol. 81 No. 1, pp. 85-87

 

Journal

308.

 

2002

 

“Structural characterization of nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars

 

Applied Physics Letters, Vol. 81 No. 3, pp. 469-471

 

Journal

309.

 

2002

 

“Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra

 

Applied Physics Letters, Vol. 81 No. 3, pp. 439-441

 

Journal

310.

 

2002

 

“Threading dislocation reduction via laterally overgrown nonpolar (11 (2) over-bar0) a-plane GaN” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars

 

Applied Physics Letters, Vol. 81, No. 7, pp. 1201-1203

 

Journal

311.

 

2002

 

“Tunable sampled-grating DBR lasers using quantum-well intermixing” E. J. Skogen, J. S. Barton, S. P. Denbaars, L. A. Coldren

 

IEEE Photonics Technology Letters, Vol. 14 No. 9, pp. 1243-1245

 

Journal

312.

 

2002

 

“Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy” C. Poblenz, T. Mates, M. Craven, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, Vol. 81 No. 15, pp. 2767-2769

 

Journal

313.

 

2002

 

“A quantum-well-intermixing process for wavelength-agile photonic integrated circuits” E. J. Skogen, J. S. Barton, S. P. DenBaars, L. A. Coldren

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8 No. 4, pp. 863-869

 

Journal

314.

 

2002

 

“Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy” T. M. Katona, J. S. Speck, S. P. DenBaars

 

Applied Physics Letters, Vol. 81 No. 19, pp. 3558-3560

 

Journal

315.

 

2002

 

“Ultrashort hole capture time in Mg-doped GaN thin films” K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun, H. Xing, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars 

 

Applied Physics Letters, Vol. 81 No. 21, pp. 3975-3977

 

Journal

316.

 

2002

 

“Higher efficiency InGaN laser diodes with an approved quantum well capping configuration” M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars

 

Applied Physics Letters, Vol. 81 No. 22, pp. 4275-4277

 

Journal

317.

 

2002

 

“Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys” D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, I. Smorchkova

 

Applied Physics Letters, Vol. 81 No. 23, pp. 4395-4397

 

Journal

317. (a)

 

2002

 

“Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)” T. M. Katona, J. S. Speck, S. P. DenBaars

 

Physica Status Solidi A, Vol. 194, pp. 550-553

 

Journal

317. (b)

 

2002

 

“Nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars

 

Physica Status Solidi A, Vol. 194, pp. 541-544

 

Journal

318.

 

2003

 

“AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching” Y. Gao, A. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu

 

Electronics Letters, Vol. 39 No. 1, pp. 148-149

 

Journal

319.

 

2003

 

“Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor” S. Estrada, H. Xing, A. Stonas, A. Huntington, U. Mishra, S. DenBaars, L. Coldren, E. Hu

 

Applied Physics Letters, Vol. 82, No. 5, pp. 820-822

 

Journal

320.

 

2003

 

“Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells” S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

 

Journal of Applied Physics, Vol. 93, No. 4, pp. 2051-2054

 

Journal

321.

 

2003

 

“Memory effect and redistribution of Mg into sequencially regrown GaN layer by metalorganic chemical vapor deposition” H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra

 

Japanese Journal of Applied Physics, Vol. 42, No. 1, pp. 50-53

 

Journal

322.

 

2003

 

“High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology” V. Paidi, X. Shouxuan, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars, U. K. Mishra, S. Long, M. J. W. Rodwell

 

IEEE Transactions on Microwave Theory & Techniques, Vol. 51, No. 2, pp. 643-652

 

Journal

323.

 

2003

 

“1.3 mu m wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: a prospect for polarization control” Y. L. Okuno, J. Geske, K.-G. Gan, Y. J. Chiu, S. P. DenBaars, J. E. Bowers

 

Applied Physics Letters, Vol. 82, No. 15, pp. 2377-2379

 

Journal

324.

 

2003

 

“Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells” U. Ozgur, H. O. Everitt, S. Keller, S. P. DenBaars

 

Applied Physics Letters, Vol. 82, No. 9, pp. 1416-1418

 

Journal

325.

 

2003

 

“Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films” P. Cantu, S. Keller, U. K. Mishra, S. P. DenBaars

 

Applied Physics Letters, Vol. 82, No. 21, pp. 3683-3685

 

Journal

326.

 

2003

 

“Metalorganic chemical vapor deposition of group III nitrides – a discussion of critical issues” S. Keller, S.P. DenBaars

 

Journal of Crystal Growth, Vol. 248, pp. 479-486

 

Journal

327.

 

2003

 

“Growth and characteristics of Fe-doped GaN” S. Heikman, S. Keller, T.Mates, S. P. DenBaars, U. K. Mishra

 

Journal of Crystal Growth, Vol. 248, pp. 513-517

 

Journal

328.

 

2003

 

“Very high voltage operation (>330V) with high current gain of A1GaN/GaN HBTs” H.L. Xing, P.M. Chavarkar, S. Keller, S.P. DenBaars, U.K. Mishra

 

IEEE Electron Device Letters, Vol. 24, No. 3, pp. 141-143

 

Journal

329.

 

2003

 

“Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures” S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, U. K. Mishra

 

Journal of Applied Physics, Vol. 93, No. 12, pp. 10114-10118

 

 

 

 

Journal

330.

 

2003

 

“Si doping effect on strain reduction in compressively strained A10.49Ga0.51N thin films” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck

 

Applied Physics Letters, Vol.83, No. 4, pp. 674-676

 

Journal

331.

 

2003

 

“Non-planar selective area growth and characterization of GaN and A1GaN” S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, F. Bertram, J. Christen

 

Japanese Journal of Applied Physics Part 1 – Regular Papers, Short Notes & Review Papers, Vol. 42, No.10, pp. 6276-6283

 

Journal

332.

 

2003

 

“Variation of structural and optical properties across an A1GaN/GaN HEMT structure directly imaged by cathodoluminescence micrscopy” F. Bertram, J. Christen, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra

 

Physica Status Solidi A-Applied Research, Vol. 200, No.1, pp. 183-186

 

Journal

333.

 

2003

 

“A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and Mach-Zehnder modulator” J.S. Barton, E.J. Skogen, M.L. Masanovic, S.P. DenBaars, L.A. Coldren

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1113-1117

 

Journal

334.

 

2003

 

“Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators” E.J. Skogen, J.W. Raring, S.P. DenBaars, L.A. Coldren

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1183-1190

 

Journal

335.

 

2003

 

“n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-infused at 550-750 degrees C” S. Estrada, A. Huntington, A. Stonas, H. Xing, U. Mishra, S. DenBaars, L. Coldren, E. Hu

 

Applied Physics Letters, Vol. 93, No. 12, pp. 560-562

 

Journal

336.

 

2003

 

“High-linearity class B power amplifiers in GaN HEMT technology” X. Shouxuan, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. P. DenBaars, U. Mishra, S. Long, M. J. W. Rodwell

 

IEEE Microwave & Wireless Components Letters, Vol. 13, No. 7, pp. 284-286

 

Journal

337.

 

2003

 

“Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate” S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

 

Journal of Vacuum Science & Technology B, Vol. 21, No. 4, pp. 1856-1862

 

Journal

338.

 

2003

 

“Structural and morphological characteristics of planar(1120) a-plane gallium nitride grown by hydride vapor phase epitaxy” B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura

 

Applied Physics Letters, Vol. 83, No. 8, pp. 1554-1556

 

Journal

339.

 

2003

 

“Refractive index study of AlxGa1-xN films grown on sapphire substrates” N. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars

 

Journal of Applied Physics, Vol. 94, No. 5, pp. 2980-2991

 

Journal

340.

 

2003

 

“Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope” N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati

 

Journal of Applied Physics, Vol. 94, No. 7, pp. 4315-4319

 

Journal

341.

 

2003

 

“Observation of huge nonlinear absorption enhancement near exciton resonance in GaN” K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun

 

Applied Physics Letters, Vol. 83, No. 15, pp. 3087-3089

 

Journal

342.

 

2003

 

“High conductivity modulation doped AlGaN/GaN multiple channel heterostructures” S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, U. K. Mishra

 

Journal of Applied Physics, Vol. 94, No. 8, pp. 5321-5323

 

Journal

343.

 

2003

 

“Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition” M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, S. P. DenBaars

 

Japanese Journal of Applied Physics, Vol. 42, pp. L235-L238

 

Journal

344.

 

2003

 

“Crystallographic wing tilt in laterally overgrown GaN” C. Rodel, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars

 

Journal of Physics D: Applied Physics, Vol. 36, pp. A188-A191

 

Journal

345.

 

2003

 

“Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition” S. Keller, P. Waltereit, P. Cantu, U. K. Mishra, J. S. Speck

 

Optical Materials, Vol. 28, pp. 187-195

 

Journal

346.

 

2003

 

“Defect reduction in (1120) a-plane gallium nitride vial lateral epitaxial overgrowth by hydride vapor-phase epitaxy” B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura

 

Applied Physics Letters, Vol. 83, pp. 644-646

 

Journal

347.

 

2004

 

“High-power polarization-engineered GaN/A1GaN HEMTs without surface passivation” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, U.K. Mishra

 

IEEE Electron Device Letters, Vol. 25, No. 1, pp. 7-9

 

Journal

348.

 

2004

 

“Power and linearity characteristics of GaN MISFETs on sapphire substrate” A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra

 

IEEE Electron Device Letters, Vol. 25, No. 2, pp. 55-57

 

Journal

349.

 

2004

 

“AlGaN/GaN current aperture vertical electron transistors with regrown channels” I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, S. P. DenBaars

 

Journal of Applied Physics, Vol. 95, No. 4, pp. 2073-2078

 

Journal

350.

 

2004

 

“Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells” M. D. Craven, P. Waltereit, J. S. Speck, S. P. DenBaars

 

Applied Physics Letters, Vol. 84, No. 4, pp. 496-498

 

Journal

351.

 

2004

 

“Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition” A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, S. A. Ringel

 

Applied Physics Letters, Vol. 84, No. 3, pp. 374-376

 

Journal

352.

 

2004

 

“AlGaN/GaN polarization-doped field effect transistor for microwave power applications” S. Rajan, H. Xing, S. DenBaars, U. K. Mishra, D. Jena

 

Applied Physics Letters, Vol. 84, No. 9, pp. 1591-1593

 

Journal

353.

 

2004

 

“Radiative and nonradiative processes in strain-free AlxGa1-x/N films studied by time-resolved photoluminescence and positron annihilation techniques” T. Onuma, S. F. Chichibu, A. Uedona, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars

 

Journal of Applied Physics, Vol. 95, No. 5, pp. 2495-2504

 

Journal

354.

 

2004

 

“Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition” M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, Vol. 84, No. 8, pp. 1281-1283

 

Journal

355.

 

2004

 

“Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening” T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura

 

Applied Physics Letters, Vol. 84, No. 6, pp. 855-857

 

Journal

356.

 

2004

 

“Preparation of indium nitride micro-and nanostructures by ammonolysis of indium oxide” B. Schwenzer, L. Loeffler, R. Seshadri, S. Keller, F. F. Lange, S. P. DenBaars, U. K. Mishra

 

Journal of Materials Chemistry, Vol. 14, No. 4, pp. 637-641

 

Journal

357.

 

2004

 

“The growth of N-face GaN by MOCVD: effect of Mg, Si, and In” P. R. Tavernier, T. Margalith, J. Williams, D. S. Green, S. Keller, S. P. DenBaars, U. K. Mishra, S. Nakamura, D. R. Clarke

 

Journal of Crystal Growth, Vol. 264, No. 1-3, pp. 150-158

 

Journal

358.

 

2004

 

“Micro cavity effect in GaN-Based light-emitting diodes formed by laser lift-off and etch-back technique” T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura

 

Japanese Journal of Applied Physics Part 2 – Letters, Vol. 43, No.3B, pp. L411-L413

 

Journal

359.

 

2004

 

“Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%” P. Waltereit, H. Sato, C. Poblenz, D. S. Green, J. S. Brown, M. McLaurin, T. Katona, S. P. DenBaars, J. S. Speck, J. H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka

 

Applied Physics Letters, Vol. 84, No. 15, pp. 2748-2750

 

Journal

360.

 

2004

 

"Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN" T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars

 

Applied Physics Letters, Vol. 84, No. 24, pp. 5025-5027

 

Journal

361.

 

2004

 

"Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes" K.-G. Gan, C.-K. Sun, S. P. DenBaars, J. E. Bowers

 

Applied Physics Letters, Vol. 84, No. 23, pp. 4675-4677

 

Journal

362.

 

2004

 

"Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth" T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

 

Applied Physics Letters, Vol. 84, No. 19, pp. 3768-3770

 

Journal

363.

 

2004

 

"High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication" Y. L. Okuno, S. P. DenBaars, J. E Bowers

 

 

Applied Physics Letters, Vol. 84, No. 18, pp. 3483-3485

 

Journal

364.

 

2004

 

"Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride" Y. Gao, M. D. Craven, J. S. Speck, S. P. DenBaars, E. L. Hu

 

Applied Physics Letters, Vol. 84, No. 17, pp. 3322-3324

 

Journal

365

 

2004

 

“Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design”  L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. Denbaars, U.K. Mishra

 

 

J. of Elec. Mat. 33 (5): 422-425

 

Journal

366

 

2004

 

“Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching”  Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. Denbaars, S. Nakamura, E.L. Hu

 

 

Jpn. J. of Appl. Phys.,

43 (5A) pp. L637-L639

 

Journal

367

 

2004

 

“Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching”  E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu

 

 

Appl. Phys. Lett., 85 (5), 762-764

 

Journal

368

 

2004

 

“MOCVD growth of AlGaN films for solar blind photodetectors”  P.C. Alejandro, S. Keller, T. Li, U.K. Mishra, J.S. Speck, S.P. Denbaars

 

 

Phys. Stat. Sol. A 201 (9); 2185-2189

 

Journal

369

 

2004

 

“Orientation-mismatched wafer bonding for polarization control of 1.3 µm-wavelength vertical cavity surface emitting lasers (VCSEL)”

Y.L. Okuno, J. Geske, Y.J. Chiu, S.P. Denbaars, J.E. Bowers

 

 

 

Institute of Physics Conference Series 174: 367-370

 

Journal

 

 

370

 

2004

 

“Cathodoluminescence study of deep ultraviolet quantum  wells grown on maskless laterally epitaxial overgrown AlGaN”  T.M. Katona, M.D. Craven, J.S. Speck, S.P. DenBaars

 

 

Appl. Phys. Lett., 85 (8), 1350-1352

 

Journal

371

 

2004

 

“Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth”  E. Skogen, J. Raring, S. DenBaars, L. Coldren

 

 

Elec. Lett. 40 (16), 993-994

 

Journal

372

 

2004

 

“Wafer Bonding of GaN and ZnSSe for optoelectronic applications”  A. Murai, L. McCarthy, U. Mishra, S.P. DenBaars, C. Kruse, S. Figge, D. Hommel

 

 

Jpn. J. of Appl. Phys., 43 (10A), L1275-1277

 

Journal

373

 

2004

 

“Nonpolar a-plane p-type GaN and p-n junction diodes”  A. Chakraborty, H. Xing, M.D. Craven, S. Keller, T. Mates, J.S. Speck, S.P. DenBaars, U.K. Mishra

 

 

J. of Appl. Phys., 96 (8), pp.4494-4499

 

Journal

374

 

2004

 

“AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate”  P.J. Hansen, L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, T.R. Taylor, S.P. DenBaars, U.K. Mishra, R.A. York, J.S. Speck

 

 

J. Vac. Sci. Technol. B 22(5), 2479-2485

 

Journal

375

 

2004

 

“Growth of thick (1120) GaN using a metal interlayer”  P.R. Tavernier, B. Imer, S.P. DenBaars, D.R. Clarke

 

 

Appl. Phys. Lett., 85 (20), 4630-4632

 

Journal

376

 

 2005

 

“Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties”  B. Schwenzer, J. Hu, R. Seshadri, S. Keller, S.P. DenBaars, U.K. Mishra

 

 

Chem. Mater., 16, (24): 5088-5095

 

Journal

377

 

2005

 

“Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electrolu-minescence emission peak”  A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra

 

 

Appl. Phys. Lett., 85 (22),

5143-5145

 

Journal

378

 

2005

 

“Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching”  E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu

 

 

Appl. Phys. Lett., 85 (22),

5179-5181

 

Journal

379

 

2005

 

“Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing”  H. Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra

 

 

Appl. Phys. Lett., 85 (22),

5254-5256

 

Journal

380

 

2005

 

“High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP”  E.J. Skogen, J.S. Barton, J.W. Raring, L.A. Coldren, S.P. DenBaars

 

 

J. of Cryst. Growth 272, 564-569

 

Journal

381

 

2005

 

“Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator”  J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren

 

 

Elec. Lett., 40 (25), 1599-1600

 

Journal

382

 

2005

 

“Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer”  B. Moran, F. Wu, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck

 

 

J. of Cryst. Growth, 273, 38-47

 

Journal

383

 

2005

 

“A study of regrowth interface and material quality for a novel InP-based architecture”  J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren

 

 

J. of Cryst. Growth, 273, 26-37

 

Journal

384

 

2005

 

“Widely Tunable Negative-Chirp SG-DBR Laser/EA-Modulated Transmitter”  J.W. Raring, E.J. Skogen, L.A. Johansson, M.N. Sysak, S.P. DenBaars, L.A. Coldren

 

 

J. of Lightwave Tech., 23 (1), 80-86

 

Journal

385

 

2005

 

“Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on laterally epitaxially overgrown a-plane GaN”  A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra

 

 

Appl. Phys. Lett., 86 (3), 031901

 

Journal

386

 

2005

 

“Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques”  S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck, S. Nakamura

 

 

Appl. Phys. Lett., Vol. 86 (2), 021914

 

Journal

387

 

2005

 

“Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on Free-standing m-plane GaN substrates”  A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra

 

 

Jpn. J. of Appl. Phys., 44 (5), L173-L175

 

Journal

388

 

2005

 

“Measurement of second order susceptibilities of GaN and AlGaN”  N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park, J.Y. Han, R.J. Molnar

 

 

J. of Appl. Phys., 97 (5),

053512

 

Journal

389

 

2005

 

“Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy”  B.A. Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura

 

 

Appl. Phys. Lett.., 86 (11), 111917

 

Journal

390

 

2005

 

“Ion implanted AlGaN–GaN HEMTs with nonalloyed ohmic contacts”  H. Yu, L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, U. Mishra

 

 

IEEE Elec. Dev. Lett., 26 (5), 283-285

 

Journal

391

 

2005

 

“Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy” B.A Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura

 

 

J. of Elec. Mat., 34 (4),

357-360

 

Journal

392

 

2005

 

“Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN”  G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck. S. Keller, S. Nakamura, S.P. Denbaars

 

 

Phys. Stat. Sol. A 202 (5),

846-849

 

Journal

393

 

2005

 

“Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering”  T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S.P. Denbaars, U.K. Mishra

 

 

Phys. Stat. Sol A 202 (5), 837-840

 

Journal

394

 

2005

 

“Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”  T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu

 

 

Appl. Phys. Lett., 86 (15), 151918

 

Journal

395

 

2005

 

“Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide”  C. Moe, H. Masui, M.C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J.S. Speck, S.P. DenBaars, C. Hussel, D. Emerson

 

 

Jpn. J. of Appl. Phys., 44 (17), L502-L504

 

Journal

396

 

2005

 

“Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates”  S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U.K. Mishra, J.S. Speck, S.P. DenBaars

 

 

Jpn. J. of Appl. Phys., 44 (13), L405-L407

 

Journal

397

 

2005

 

“Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor”  B. Schwenzer, C. Meier, O. Masala, R. Seshadri, S.P. DenBaars, U.K. Mishra

 

 

J. Mater. Chem., 15 (19),

1891-1895

 

Journal

398

 

2005

 

“Optical evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum structures”  N. Akopian, G. Bahir, D. Gershoni, M.D. Craven, J.S. Speck, S.P. DenBaars

 

 

Appl. Phys. Lett., 86 (20), 202104

 

Journal

399

 

2005

 

“Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system”  E.J. Skogen, L.A. Coldren, J.W. Raring, S.P. DenBaars