Special Nitrides Seminar - Sony's Tatsushi Hamaguchi
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https://ucsb.zoom.us/j/89535201656?pwd=L1habGhmOStIbFVJMkVkNndaeE5tQT09
Meeting ID: 895 3520 1656 Passcode: 466648
Dr. Tatsushi Hamaguchi
Sony Semiconductor Solutions Corp. (Japan)
Development of Curved Mirror VCSELs at Sony
Sony has been developing GaN-based VCSELs with unique structure where one side of mirror is curved. This lecture introduces the latest progress of such devices covering visible emission region through touching on its excellent characteristics of blue VCSELs such as high uniformity and efficiency. The average threshold current was 0.64 mA with standard deviations of 0.043 mA. The peak WPE and output power were 13.4 % and 7.6 mW at 5.2 mA and 12.8 mA operating current, respectively. Sony also obtained green VCSELs with mW-class output and a wall plug efficiency of 3.7% with this structure. The lecturer reports the progress on VCSELs with a single cavity filtering mirror with a highly varying reflectivity spectrum to demonstrate single longitudinal mode operation for a VCSEL with a ~25 μm cavity length. This lecture also introduces the very latest result of the group where the VCSEL’s aperture emits fourteen dots of vertical-cavity modes with spatial coherence.
Tatsushi HAMAGUCHI was born in Osaka, Japan in 1980. He received the B.S. and M.S. degrees in material science and engineering from Kyoto University in 2004 and 2006. He received the Ph.D. degree in electronic engineering from Sophia University in 2019. From 2006 to 2008, he worked at the Nitride Semiconductor Research Laboratory of Nichia Corporation. After 2008, he worked for Sony corporation, where he did development of nitride-based edge-emitting lasers and vertical cavity surface-emitting lasers (VCSELs). He has acted as senior scientist to lead the Sony’s project team for nitride-based VCSELs during the recent years. He received Sony Outstanding Engineer Award in 2019 and JSAP Outstanding Paper Award in 2021.