Publications

No.

 

Year

 

Authors and Title

 

Publisher

 

Category

1.

 

1989

 

S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy”

 

J. Cryst. Growth, Vol. 97, pp. 303-309

 

Journal

 

 

 

 

 

 

 

 

 

2.

 

1990

 

S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes”

 

Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697

 

Journal

 

 

 

 

 

 

 

 

 

3.

 

1991

 

S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth”

 

Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023

 

Journal

 

 

 

 

 

 

 

 

 

4.

 

1991

 

S. Nakamura “Analysis of real-time monitoring using interference effects”

 

Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353

 

Journal

 

 

 

 

 

 

 

 

 

5.

 

1991

 

S. Nakamura “In situ monitoring of GaN growth using interference effects”

 

Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628

 

Journal

 

 

 

 

 

 

 

 

 

6.

 

1991

 

S. Nakamura “GaN growth using GaN buffer layer”

 

Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707

 

Journal

 

 

 

 

 

 

 

 

 

7.

 

1991

 

S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers”

 

Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711

 

Journal

 

 

 

 

 

 

 

 

 

8.

 

1991

 

S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 30 No. 12A, pp. L1998-L2001

 

Journal

 

 

 

 

 

 

 

 

 

9.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 2B, pp. L139-L142

 

Journal

 

 

 

 

 

 

 

 

 

10.

 

1992

 

S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 5A, pp. 1258-1266

 

Journal

 

 

 

 

 

 

 

 

 

11.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers”

 

J. Appl. Phys.,  Vol. 71,

No. 11, pp. 5543-5549

 

Journal

 

 

 

 

 

 

 

 

 

12.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 9A, pp. 2883-2888

 

Journal

 

 

 

 

 

 

 

 

 

13.

 

1992

 

S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 10B, pp. L1457-L1459

 

Journal

 

 

 

 

 

 

 

 

 

14.

 

1993

 

S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 1A/B. pp. L8-L11

 

Journal

 

 

 

 

 

 

 

 

 

15.

 

1993

 

S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 1A/B, pp. L16-L19

 

Journal

 

 

 

 

 

 

 

 

 

16.

 

1993

 

S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 3A, pp. L338-L341

 

Journal

 

 

 

 

 

 

 

 

 

17.

 

1993

 

S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes”

 

Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392

 

Journal

 

 

 

 

 

 

 

 

 

18.

 

1993

 

S. Nakamura “InGaN blue-light-emitting diodes”

 

Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915

 

Journal

 

 

 

 

 

 

 

 

 

19.

 

1993

 

S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films”

 

J. Appl. Phys.,  Vol. 74

No. 6, pp. 3911-3915

 

Journal

 

 

 

 

 

 

 

 

 

20.

 

1994

 

S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure”

 

No. 602, pp. 93-102

 

 

 

 

 

 

 

 

 

 

 

21.

 

1994

 

S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”

 

Appl. Phys. Lett.,  Vol. 64 No. 13, pp. 1687-1689

 

Journal

 

 

 

 

 

 

 

 

 

22

 

1994

 

S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display”

 

Nikkei Electronics Asia, June 1994

 

Magazine

 

 

 

 

 

 

 

 

 

23.

 

1994

 

S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes”

 

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

24.

 

1994

 

S. Nakamura “Realized high bright blue laser-emitting diodes”

 

Scientific American, October 1994

 

Magazine

 

 

 

 

 

 

 

 

 

25.

 

1994

 

S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes”

 

Microelectronics Journal,  Vol. 25, pp. 651-659

 

Journal

 

 

 

 

 

 

 

 

 

26.

 

1994

 

S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes”

 

J. Cryst. Growth,  Vol. 145, pp. 911-917

 

Journal

 

 

 

 

 

 

 

 

 

27.

 

1994

 

S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs”

 

Mat. Res. Symp. Proc.,  

Vol. 339, pp. 173-178

 

Journal

 

 

 

 

 

 

 

 

 

28.

 

1994

 

S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes”

 

J. Appl. Phys., Vol. 76, pp. 8189-8191

 

Journal

 

 

 

 

 

 

 

 

 

29.

 

1995

 

S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”

 

J. Appl. Phys.,  Vol. 79

No. 5, pp. 2784-2786

 

Journal

 

 

 

 

 

 

 

 

 

30.

 

1995

 

S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays”

 

IEEE, May 1995

 

Journal

 

 

 

 

 

 

 

 

 

31.

 

1995

 

S. Nakamura “InGaN/AlGaN blue-light-emitting diodes”

 

J. Vac. Sci. & Tech. A, 

Vol. 13 No. 3, pp. 705-710

 

Journal

 

 

 

 

 

 

 

 

 

32.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures”

 

Jpn. J. Appl. Phys.,  Vol. 34 No. 7A, pp. L797-L799

 

Journal

 

 

 

 

 

 

 

 

 

33.

 

1995

 

S. Nakamura “LED full color display”

 

IEICE, Vol. 78, No. 7, pp. 683-688

 

Journal

 

 

 

 

 

 

 

 

 

34.

 

1995

 

S. Nakamura “InGaN light-emitting diodes with quantum well structures”

 

Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP)

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

35.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 34 No. 10B, pp. L1332-L1335

 

Journal

 

 

 

 

 

 

 

 

 

36.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’

 

Appl. Phys. Lett.,  Vol. 67 No. 13, pp. 1868-1870

 

Journal

 

 

 

 

 

 

 

 

 

37.

 

1995

 

S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED”

 

Optik, Vol. 24, No. 11, pp. 673-678

 

Journal

 

 

 

 

 

 

 

 

 

38.

 

1995

 

T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN”

 

J. Phys. Condens. Matter,  Vol. 7 No. 10, pp. L129-L133

 

Journal

 

 

 

 

 

 

 

 

 

39.

 

1995

 

S. Nakamura “III-V Nitride light-emitting diodes”

 

OSA Proceedings on Advanced Solid-State Lasers,  Vol. 24, pp. 20-24

 

Journal

 

 

 

 

 

 

 

 

 

40.

 

1995

 

W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes”

 

Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378

 

Journal

 

 

 

 

 

 

 

 

 

41.

 

1995

 

S. Nakamura “Recent developments of GaN based LEDs”

 

Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

42.

 

1996

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

43.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes”

 

Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76

 

Journal

 

 

 

 

 

 

 

 

 

44.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets”

 

Jpn. J. Appl. Phys.,  Vol. 35 No. 2B, pp. L217-L220

 

Journal

 

 

 

 

 

 

 

 

 

45.

 

1996

 

S. Nakamura “Pulsed operation of violet laser diodes”

 

Electr. Mater.,March issue, pp. 159-164

 

Journal

 

 

 

 

 

 

 

 

 

46.

 

1996

 

S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates”

 

Appl. Phys. Lett.,  Vol. 68 No. 15, pp. 2105-2107

 

Journal

 

 

 

 

 

 

 

 

 

47.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes”

 

Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271

 

Journal

 

 

 

 

 

 

 

 

 

48.

 

1996

 

S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers”

 

Appl. Phys. Lett., Vo. 68

No. 26, pp. 3766-3768

 

Journal

 

 

 

 

 

 

 

 

 

49.

 

1996

 

S. Nakamura “InGaN-based blue/green LEDs and laser diodes”

 

Adv. Mater.,  Vol. 8 No. 8, pp. 689-692

 

Journal

 

 

 

 

 

 

 

 

 

50.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K”

 

Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036

 

Journal

 

 

 

 

 

 

 

 

 

51.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes”

 

Appl. Phys. Lett.,  Vol. 69 No. 26, pp. 4056-4058

 

Journal

 

 

 

 

 

 

 

 

 

52.

 

1996

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures”

 

Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190

 

Journal

 

 

 

 

 

 

 

 

 

53.

 

1996

 

S. Nakamura “Present status and future prospects of GaN-based light emitting devices”

 

Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685

 

Journal

 

 

 

 

 

 

 

 

 

54.

 

1996

 

T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN”

 

Physica B, Vol. 219-220,  pp. 493-495

 

Journal

 

 

 

 

 

 

 

 

 

55.

 

1996

 

S. Nakamura “Fabrication of blue and green nitride light-emitting diodes”

 

Inst. Phys. Conf. Ser. No. 142, Chapter 6

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

56.

 

1996

 

S. Nakamura “III-V nitride-based light-emitting diodes”

 

Diamond and Related Materials,  Vol. 5 Issue 1-3, pp. 496-500

 

Journal

 

 

 

 

 

 

 

 

 

57.

 

1996

 

Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer”

 

Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416

 

Journal

 

 

 

 

 

 

 

 

 

58.

 

1996

 

K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers”

 

Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789

 

Journal

 

 

 

 

 

 

 

 

 

59.

 

1996

 

W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes”

 

Mat. Res. Soc. Symp. Proc. 395, pp. 673-678

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

60.

 

1996

 

S. Nakamura “InGaN light-emitting diodes with quantum-well structures”

 

Mat. Res. Soc. Symp. Proc. 395, pp. 879-887

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

61.

 

1996

 

S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes”

 

Proceedings of SPIE, Vol. 2693, pp. 43-56

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

62.

 

1996

 

T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

63.

 

1996

 

S. Nakamura “First successful III-V nitride based laser diodes”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

64.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes”

 

Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570

 

Journal

 

 

 

 

 

 

 

 

 

65.

 

1996

 

S. Nakamura “III-V nitride based blue/green LEDs and LDs”

 

23rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

66.

 

1996

 

T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation”

 

23rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

67.

 

1996

 

W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN-based single-quantum-well light-emitting diodes”

 

23rd ICPS Proc.,Berlin, July 21-26, Vol. 4, pp. 2921-2924

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

68.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Ridge-geometry InGaN multi-quantum-well-structure laser diodes”

 

Appl. Phys. Lett., Vol. 69 No. 10, pp. 1477-1479

 

Journal

 

 

 

 

 

 

 

 

 

69.

 

1996

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”

 

J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786

 

Journal

 

 

 

 

 

 

 

 

 

70.

 

1996

 

K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, S. Nakamura “Luminescence spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes”

 

MRS Internet Journal of Nitride Semiconductor Research, Vol. 1

 

Journal

 

 

 

 

 

 

 

 

 

71.

 

1997

 

A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A.Kuramata, K. Horino, S. Nakamura “Biaxial strain dependence of exciton resonance energies in wurzite GaN”

 

J. Appl. Phys., Vol. 81

No. 1, pp. 417-424

 

Journal

 

 

 

 

 

 

 

 

 

72.

 

1997

 

Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura “Recombination dynamics of localized excitons in In(sub 0.20)Ga(sub 0.80)N-In(sub 0.05)Ga(sub0.95)N multiple quantum wells”

 

Phys. Rev. B,  Vol. 55 No. 4, pp. R1938-R1941

 

Journal

 

 

 

 

 

 

 

 

 

73.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure”

 

Appl. Phys. Lett.,  Vol. 70 No. 5, pp. 616-618

 

Journal

 

 

 

 

 

 

 

 

 

74.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime”

 

Appl. Phys. Lett.,  Vol. 70 No. 7, pp. 868-870

 

Journal

 

 

 

 

 

 

 

 

 

75.

 

1997

 

S. Nakamura “Blue-green light-emitting diodes and violet laser diodes”

 

MRS Bulletin, Vol. 22 No. 2, pp. 29-35

 

Journal

 

 

 

 

 

 

 

 

 

76.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diode with a lifetime of 27 hours”

 

Appl. Phys. Lett.,  Vol. 70 No. 11, pp.1417-1419

 

Journal

 

 

 

 

 

 

 

 

 

77.

 

1997

 

S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, S. Yoshida “Exciton spectra of cubic and hexagonal GaN epitaxial films”

 

Jpn. J. Appl. Phys., Vol 36 No. 3B, pp. 1976-1983

 

Journal

 

 

 

 

 

 

 

 

 

78.

 

1997

 

S. Nakamura “GaN-based blue/green semiconductor laser”

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 36 No. 3B,

pp. 435-442

 

Journal

 

 

 

 

 

 

 

 

 

79.

 

1997

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Optical properties of InGaN”

 

Bulletin of Solid State Physics and Applications

 

Journal

 

 

 

 

 

 

 

 

 

80.

 

1997

 

Y. Kawakami, S. Saijyo, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN-single quantum well-based light emitting diodes”

 

Bulletin of Solid State Physics and Applications

 

Journal

 

 

 

 

 

 

 

 

 

81.

 

1997

 

S. Nakamura “Characteristics of RT-CW operated bluish-purple laser diodes”

 

Bulletin of Solid State Physics and Applications

 

Journal

 

 

 

 

 

 

 

 

 

82.

 

1997

 

Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, S. Nakamura “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm”

 

Appl. Phys. Lett., Vol. 70 No. 8, pp. 981-983

 

Journal

 

 

 

 

 

 

 

 

 

83.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Subband emission of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation”

 

Appl. Phys. Lett., Vol. 70 No. 20, pp. 2753-2755

 

Journal

 

 

 

 

 

 

 

 

 

84.

 

1997

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Luminescence from localized states in InGaN epilayers”

 

Appl. Phys. Lett., Vol. 70 No. 21, pp. 2822-2824

 

Journal

 

 

 

 

 

 

 

 

 

85.

 

1997

 

S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sota, S. Nakamura “Urbach-Matienssen tails in a wurzite GaN epilayer”

 

Appl. Phys. Lett., Vol. 70 No. 25, pp. 3440-3442

 

Journal

 

 

 

 

 

 

 

 

 

86.

 

1997

 

S. Nakamura “InGaN-based blue laser diodes”

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3 No. 3,

pp. 712-718

 

Journal

 

 

 

 

 

 

 

 

 

87.

 

1997

 

S. Nakamura “Success story with blue LEDs”

 

Science Journal Kagaku, Vol. 67 No. 6, pp.438-450

 

Journal

 

 

 

 

 

 

 

 

 

89.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes”

 

Jpn. J. Appl. Phys., Vol. 36 No. 8B, pp. L1059-L1061

 

Journal

 

 

 

 

 

 

 

 

 

90.

 

1997

 

S. Chichibu, K. Wada, S. Nakamura “Spatially resolved cathodoluminescence spectra of InGaN quantum wells”

 

Appl. Phys. Lett., Vol. 71 No. 16, pp. 2346-2348

 

Journal

 

 

 

 

 

 

 

 

 

91.

 

1997

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices”

 

Jpn. J. Appl. Phys., Vol. 36 No. 12A, pp. L1568-L1571

 

Journal

 

 

 

 

 

 

 

 

 

92.

 

1997

 

S. Nakamura “InGaN quantum-well structure blue LEDs and LDs”

 

Journal of Luminescence, Vol. 72-74, pp. 55-58

 

Journal

 

 

 

 

 

 

 

 

 

93.

 

1997

 

S. Nakamura “Present and future aspects of blue light emitting devices”

 

Applied Surface Science, Vol. 113-114, pp. 689-697

 

Journal

 

 

 

 

 

 

 

 

 

94.

 

1997

 

S. Nakamura “First III-V-nitride-based violet laser diodes”

 

J. Cryst. Growth, Vol. 170 Issue 1-4, pp. 11-15

 

Journal

 

 

 

 

 

 

 

 

 

95.

 

1997

 

S. Nakamura “First laser-diodes fabricated from III-V nitride based materials”

 

Mater. Sci. & Engin. B, 

Vol. 43 Issue 1-3, pp. 258-264

 

Journal

 

 

 

 

 

 

 

 

 

96.

 

1997

 

S. Nakamura “III-V nitride based light-emitting devices”

 

Solid State Communications, Vol. 102 No. 2-3,
pp. 237-248

 

Journal

 

 

 

 

 

 

 

 

 

97.

 

1997

 

S. Nakamura “RT-CW operation of InGaN multi-quantum-well structure laser diodes”

 

Mater. Sci. & Engin. B,

Vol. 50 Issue 1-3, pp. 277-284

 

Journal

 

 

 

 

 

 

 

 

 

98.

 

1997

 

S. Nakamura “Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes”

 

Semiconductors & Semimetals, Vol. 48,

pp. 391-443

 

Journal

 

 

 

 

 

 

 

 

 

99.

 

1997

 

G. Mohs, T. Aoki, M. Nagai, R. Shimano, M. Kuwata-Gonokami, S. Nakamura “Failure of the modal gain model in a GaN based laser diode”

 

Solid State Communications, Vol. 104 No. 11,

pp. 643-648

 

Journal

 

 

 

 

 

 

 

 

 

100.

 

1997

 

S. Nakamura “Lessons from research of blue LEDs”

 

J. Phys. Soc. Jpn., Vol. 52 No. 12, pp.924-925

 

Journal

 

 

 

 

 

 

 

 

 

101.

 

1997

 

S. Nakamura “Room-temperature CW operation of GaN based laser diodes”

 

The Review of Laser Engineering, Vol. 25 No. 7, pp. 498-503

 

Journal

 

 

 

 

 

 

 

 

 

102.

 

1997

 

S. Nakamura “How I was led to the discovery of the InGaN-based blue/green LEDs”

 

Semiconductor News, July-December 1997, pp. 87-92

 

Magazine

 

 

 

 

 

 

 

 

 

103.

 

1997

 

F. A. Ponce, D. Cherns, W. T. Young, J. W. Steeds, S. Nakamura “Observation of nanopipes and inversion domains in high quality GaN epitaxial layers”

 

Mat. Res. Soc. Proc., 449, pp. 405-410

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

104.

 

1997

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Recombination of localized excitons in InGaN single and multi-quantum well structures”

 

Mat. Res. Soc. Proc., 449, pp. 653-658

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

105.

 

1997

 

Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of the InGaN MQW grown by MOCVD”

 

Mat. Res. Soc. Proc., 449, pp. 665-670

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

106.

 

1997

 

W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of GaN-based single quantum well LEDs”

 

Mat. Res. Soc. Symp. Proc., 449, pp. 757-767

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

107.

 

1997

 

S. Nakamura “Characteristics of InGaN multi-quantum-well structure laser diodes”

 

Mat. Res. Soc. Symp. Proc., 449, pp. 1135-1142

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

108.

 

1997

 

S. Nakamura “Characteristics of RT-CW operated InGaN multi-quantum-well-structure laser diodes”

 

MRS Internet J. Nitride Semicond. Res. 2, 5

 

Journal

 

 

 

 

 

 

 

 

 

109.

 

1997

 

M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Brillouin scattering study of gallium nitride: elastic stiffness constants”

 

Journal of Physics: Condensed Matter, Vol. 9 No. 1, pp. 241-248

 

Journal

 

 

 

 

 

 

 

 

 

110.

 

1997

 

S. Nakamura “Present performance of InGaN based blue/green/yellow LEDs”

 

Proceedings of SPIE, Vol. 3002, pp. 26-35

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

111.

 

1997

 

T. Deguchi, A. Shikanai, T. Sota, S. Chichibu, N. Sarukura, H. Ohtaka, T. Yamanaka, S. Nakamura “Nanosecond pump-and-probe study of wurtzite GaN”

 

Materials Science and Engineering, B50, pp. 180-182

 

Journal

 

 

 

 

 

 

 

 

 

112.

 

1997

 

T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, S. Nakamura “Gain spectra in cw InGaN/GaN MQW laser diodes”

 

Materials Science and Engineering, B50, pp. 251-255

 

Journal

 

 

 

 

 

 

 

 

 

113.

 

1997

 

Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijo, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of localized excitons in self-formed InGaN quantum dots”

 

Materials Science and Engineering B, Vol. 50

Issue 1-3, pp. 256-263

 

Journal

 

 

 

 

 

 

 

 

 

114.

 

1997

 

V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, K. G. Zolina, S. Nakamura “Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes”

 

J. Eur. Ceram. Soc., Vol. 17 No. 15/16, pp. 2033-2037

 

Journal

 

 

 

 

 

 

 

 

 

115.

 

1997

 

D. Cherns, W. T. Young, M. A. Saunders, F. A. Ponce, S. Nakamura “The analysis of nanopipes and inversion domains in GaN thin films”

 

Inst. Phys. Conf. Ser., No. 157, pp. 187-190

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

116.

 

1997

 

S. Nakamura “Present status and future of blue LEDs and LDs”

 

Rev. Laser Engin., Vol. 25 No. 12, pp. 850-854

 

Journal

 

 

 

 

 

 

 

 

 

117.

 

1997

 

D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce, S. Nakamura “Observation of coreless dislocations in alpha-GaN”

 

Journal Crystal Growth, Vol. 178 No. 1-2, pp. 201-206

 

Journal

118.

 

 

 

S. Nakamura, G. Fasol The Blue Laser Diode (The Complete Story)

 

Springer-Verlag: Heidelberg

 

Book

 

 

 

 

 

 

 

 

 

119.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamado, T. Matsushita, H. Kiyoku, V. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate”

 

Appl. Phys. Lett., Vol. 72 No. 2, pp. 211-213

 

Journal

 

 

 

 

 

 

 

 

 

120.

 

1998

 

S. Nakamura “Applications of LEDs and LDs”

 

Semiconductors & Semimetals, Vol. 50,

pp. 431-457

 

Journal

 

 

 

 

 

 

 

 

 

121.

 

1998

 

S. Nakamura “Progress with GaN-based blue/green LEDs and bluish-purple semiconductor LDs”

 

Electronics and Communications in Japan, Vol. 81 No. 5, pp. 1-8

 

Journal

 

 

 

 

 

 

 

 

 

122.

 

1998

 

A. Alemu, B. Gil, M. Julier, S. Nakamura “Optical properties of wurzite GaN epilayers growns on A-plane sapphire”

 

Phys. Rev. B, Vol. 57 No.7, pp. 3761-3764

 

Journal

 

 

 

 

 

 

 

 

 

123.

 

1998

 

S. Nakamura “Light emission moves into blue”

 

Physics World, February 1998

 

Magazine

 

 

 

 

 

 

 

 

 

124.

 

1998

 

M. Julier, J. Campo, B. Gil, J.P. Lascaray, S. Nakamura “Determination of the spin-exchange interaction constant in wurzite GaN”

 

Phys. Rev. B, Vol. 57 No. 12, pp. R6791-R6794

 

Journal

 

 

 

 

 

 

 

 

 

125.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates”

 

Jpn. J. Appl. Phys., Vol. 37 No. 3B, pp. L309-L312

 

Journal

 

 

 

 

 

 

 

 

 

126.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kazaki, H. Umemoto, M. Sano, K. Chocho “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates”

 

Appl. Phys. Lett., Vol. 72 No. 16, pp. 2014-2016

 

Journal

 

 

 

 

 

 

 

 

 

127.

 

1998

 

S. Nakamura “InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained layer superlattices”

 

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4 No. 3,

pp. 483-489

 

Journal

 

 

 

 

 

 

 

 

 

128.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420mW”

 

Jpn. J. Appl. Phys., Vol. 37 No. 6A, pp. L627-L629

 

Journal

 

 

 

 

 

 

 

 

 

129.

 

1998

 

T. Mukai, K. Takekawa, S. Nakamura “InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates”

 

Jpn. J. Appl. Phys., Vol. 37 No. 7B, pp. L839-L841

 

Journal

 

 

 

 

 

 

 

 

 

130.

 

1998

 

S. Chichibu, T. Sota, K. Wada, S. Nakamura “Exciton localization in InGaN quantum well devices”

 

J. Vac. Sci. Technol. B, Vol. 16 No. 4, pp. 2204-2214

 

Journal

 

 

 

 

 

 

 

 

 

131.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates”

 

Appl. Phys. Lett., Vol. 73 No. 6, pp. 832-834

 

Journal

 

 

 

 

 

 

 

 

 

132.

 

1998

 

S. Nakamura “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes”

 

Science, Vol. 281 No. 5379, pp. 956-961

 

Journal

 

 

 

 

 

 

 

 

 

133.

 

1998

 

T. Mukai, M. Yamada, S. Nakamura “Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes”

 

Jpn. J. Appl. Phys., Vol. 37, pp. L1358-L1361

 

Journal

 

 

 

 

 

 

 

 

 

134.

 

1998

 

S. Nakamura “Materials issues for InGaN-based lasers”

 

J. Elect. Mater., Vol. 27

No. 4, pp. 160-165

 

Journal

 

 

 

 

 

 

 

 

 

135.

 

1998

 

S. Nakamura “Cathodoluminescence study on quantum microstructures”

 

Jpn. Soc. Appl. Phys., Vol. 67 No. 7, pp. 798-801

 

Journal

 

 

 

 

 

 

 

 

 

136.

 

1998

 

T. Mukai, D. Morita, S. Nakamura “High-power UV InGaN/AlGaN double-heterostructure LEDs”

 

J. Cryst. Growth,

Vol. 189/190, pp. 778-781

 

Journal

 

 

 

 

 

 

 

 

 

137.

 

1998

 

G. Mohs, T. Aoki, R. Shimano,

M. Kuwata-Gonokami, S. Nakamura “On the grain mechanism in GaN based laser diodes”

 

Solid State Communications, Vol. 108 No. 2, pp. 105-110

 

Journal

 

 

 

 

 

 

 

 

 

138.

 

1998

 

S. Nakamura “InGaN-based laser diodes”

 

Annu. Rev. Mater. Sci.,

Vol. 28, pp. 125-152

 

Journal

 

 

 

 

 

 

 

 

 

139.

 

1998

 

A. Alemu, M. Julier, J. Campo, B. Gil, D. Scalbert, J.-P. Lascaray “Optical anisotropy in GaN grown onto A-plane sapphire”

 

E-MRS ’98 Spring Meeting, Strasbourg, France

 

Conference proceeding

 

 

 

 

 

 

 

 

 

140.

 

1998

 

T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura “Luminescence spectra from InGaN multiquantum wells heavily doped with Si”

 

Appl. Phys. Lett., Vol. 72 No. 25, pp. 3329-3331

 

Journal

 

 

 

 

 

 

 

 

 

141.

 

1998

 

K. Ando, T. Yamaguchi, K. Koizumi, Y. Okuno, T. Abe, H. Kasada, A. Ishibashi, K. Nakano, S. Nakamura “Deep defect center characteristics of wide-bandgap II-IV and III-V blue laser materials”

 

Proceedings of SPIE (1998, Jan. 26-29), San Jose, California

 

Conference proceeding

 

 

 

 

 

 

 

 

 

142.

 

1998

 

S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours”

 

MRS Bulletin, Vol. 23 No. 5, pp. 37-43

 

Journal

 

 

 

 

 

 

 

 

 

143.

 

1998

 

S. Nakamura, K. Kitamura, H. Umeya, H. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi “Bright electroluminescence from CdS quantum dot LED structures”

 

Electronics Letters, Vol. 34 No. 25, pp. 2435-2436

 

Journal

 

 

 

 

 

 

 

 

 

144.

 

1998

 

E.R. Glaser, T.A. Kennedy, W.E. Carlos, P.P. Ruden, S. Nakamura “Recombination processes in In/sub x/Ga/sub 1-x/N light-emitting diodes studied through optically detected magnetic resonance”

 

Appl. Phys. Lett., Vol. 73 No. 21, pp. 3123-3125

 

Journal

 

 

 

 

 

 

 

 

 

145.

 

1998

 

S. Nakamura, Y. Ueno, K. Tajima “Ultrafast (200-fs switching, 1.5-Tb/s demultiplexing) and high-repetition (10 GHz) operations of a polarization-discriminating symmetric Mach-Zehnder all-optical switch”

 

IEEE Photonics Technology Letters,Vol. 10 No. 11, pp. 1572-1574

 

Journal

146.

 

 

 

 

 

 

 

 

 

 

1998

 

Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced activation of hydrogen-passivated magnesium in p-type GaN films”

 

Jpn. J. Appl. Phys., Vol. 37 No. 8B, pp. L970-L971

 

Journal

147.

 

 

 

 

 

 

 

 

 

 

1998

 

Y. Kawakami, Y. Narukawa, K. Sawada, S. Nakamura “The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells”

 

Electronics and Communications in Japan, Vol. 81 No. 7, pp. 45-56

 

Journal

 

 

 

 

 

 

 

 

 

148.

 

1998

 

K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, T. Murashita “Cathodoluminescence study of quantum microstructures”

 

Oyo Buturi, Vol. 67 No. 7, pp. 789-801

 

Journal

 

 

 

 

 

 

 

 

 

149.

 

1998

 

S. Nakamura “Commercial blue  LDs a step closer for Nichia”

 

III-Vs Review, Vol. 11 No.2, pp. 28-32

 

Journal

 

 

 

 

 

 

 

 

 

150.

 

1998

 

T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura “Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes”

 

Semicond. Sci. and Technol., Vol. 13 No. 1, pp. 97-101

 

Journal

 

 

 

 

 

 

 

 

 

151.

 

1998

 

Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, S. Fujita, S. Fujita, S. Nakamura “The mechanism of radiative recombination in light emitting devices composed of InGaN quantum wells”

 

Transactions of the Institute of Electronics, Information and Communication Engineers C-II, Vol. J81C-II No. 1, pp. 78-88

 

Journal

 

 

 

 

 

 

 

 

 

152.

 

1998

 

T. Mukai, H. Narimatsu, S. Nakamura “Amber InGaN-based light-emitting diodes operable at high ambient temperatures”

 

Jpn. J. Appl. Phys., Vol. 37 No. 5A, pp. L479-L481

 

Journal

 

 

 

 

 

 

 

 

 

153.

 

1998

 

Z. L. Weber, S. Ruvimov, W. Swider, Y. Kim, J. Washburn, S. Nakamura, R. S. Kern, Y. Chen, J. W. Yang “Role of dopants  and impurities on pinhole formation; defects formed at InGaN/GaN and AlGaN/GaN quantum wells”

 

Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 375-380

 

Journal

 

 

 

 

 

 

 

 

 

154.

 

1998

 

S. Chichibu, T. Deguchi, T. Sota, K. Wada, S. Nakamura “Localized excitons in InGaN”

 

Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 613-624

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

155.

 

1998

 

S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours”

 

Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 1145-1156

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

156.

 

1998

 

Y. Narukawa, S. Saijyo, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN single quantum well LEDs”

 

J. Crystal Growth, Vol. 189/190, pp. 593-596

 

Journal

 

 

 

 

 

 

 

 

 

157.

 

1998

 

Y. Narukawa, K. Sawada, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of localized excitons in InGaN single quantum wells”

 

J. Crystal Growth, Vol. 189/190, pp. 606-610

 

Journal

 

 

 

 

 

 

 

 

 

158.

 

1998

 

W. E. Carlos, S. Nakamura “Magnetic resonance studies of GaN-based LEDs”

 

J. Crystal Growth, Vol. 189/190, pp. 794-797

 

Journal

 

 

 

 

 

 

 

 

 

159.

 

1998

 

Y. Zohta, H. Kuroda, R. Nii, S. Nakamura “Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes”

 

J. Crystal Growth, Vol. 189/190, pp. 816-819

 

Journal

 

 

 

 

 

 

 

 

 

160.

 

1998

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Present status of InGaN/GaN/AlGaN-based laser diodes”

 

J. Crystal Growth, Vol. 189/190, pp. 820-825

 

Journal

 

 

 

 

 

 

 

 

 

161.

 

1998

 

S. Nakamura “High-power InGaN-based blue laser diodes with a long lifetime”

 

J. Crystal Growth, Vol. 195, pp. 242-247

 

Journal

 

 

 

 

 

 

 

 

 

162.

 

1998

 

S. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth”

 

Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462

 

Journal

 

 

 

 

 

 

 

 

 

163.

 

1998

 

S. Nakamura “Recent developments in InGaN-based LEDs and LDs”

 

Acta Physica Polonica A, Vol. 95, pp. 153-164

 

Journal

 

 

 

 

 

 

 

 

 

164.

 

1998

 

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, I. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates with a fundamental transverse mode”

 

Jpn. J. Appl. Phys., Vol. 37 Part 2 No. 9A-B, L1020-L1022

 

Journal

 

 

 

 

 

 

 

 

 

165.

 

1998

 

S. Nakamura “Progress of GaN-based blue/green LEDs and bluish-purple semiconductor LDs”

 

Trans. Inst. Electron. Inf. Comm. Engin., Vol. J81C-II No. 1, pp. 89-96  

 

Journal

 

 

 

 

 

 

 

 

 

166.

 

1998

 

D. Cherns, W. T. Young, M. Sanders, J. W. Steeds, F. A. Ponce, S. Nakamura “Determination of the atomic structure of inversion domain boundaries in alpha-GaN by transmission electron microscopy”

 

Philosophical Magazine A (Physics of Condensed Matter: Structure, Defects, and Mechanical Properties), Vol. 77 No. 1, pp. 273-286

 

Magazine

 

 

 

 

 

 

 

 

 

167.

 

1999

 

T. Mukai, M. Yamada, S. Nakamura “InGaN-based UV/blue/green/amber/red LEDs”

 

Light Emitting Diodes: Research, Manufacturing, and Applications III (SPIE), Vol. 3621

 

Journal

 

 

 

 

 

 

 

 

 

168.

 

1999

 

T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Infrared lattice absorption in wurtzite GaN”

 

Jpn. J. Appl. Phys., Vol. 38 No. 2B, pp. L151-L153

 

Journal

 

 

 

 

 

 

 

 

 

169.

 

1999

 

S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, T. Mukai “Violet InGaN/GaN/AlGaN-based laser diodes operable at 50˚ C with a fundamental transverse mode”

 

Jpn. J. Appl. Phys., Vol. 38 No. 3A, pp. L226-L229

 

Journal

 

 

 

 

 

 

 

 

 

170.

 

1999

 

S.F. Chichibu, H. Marchand, M.S. Minskey, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Feisher, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth”

 

Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462

 

Journal

 

 

 

 

 

 

 

 

 

171.

 

1999

 

M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura “Brillouin scattering study of bulk GaN”

 

J. Appl. Phys., Vol. 85 No. 12, pp. 8502-8504

 

Journal

 

 

 

 

 

 

 

 

 

172.

 

1999

 

S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN’

 

J. Mater. Rsrch., Vol. 14

No. 7, pp. 2716-2731

 

Journal

 

 

 

 

 

 

 

 

 

173.

 

1999

 

K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Reflectance and emission spectra of excitonic polaritons in GaN”

 

Phys. Rev. B, Vol. 60 No. 7, pp. 4723-4730

 

Journal

 

 

 

 

 

 

 

 

 

174.

 

1999

 

T. Deguchi, K. Torii, K. Shimada, T. Sota, R. Matsuo, M. Sugiyami, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of InGaN active layer in ultraviolet light-emitting diode”

 

Jpn. J. Appl. Phys., Vol. 38 No. 9A/B, pp. L975-L977

 

Journal

 

 

 

 

 

 

 

 

 

175.

 

1999

 

J.T. Torvik, J.I. Pankove, S. Nakamura, I. Grzegory, S. Porowski “The effect of threading dislocations, Mg-doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors”

 

J. Appl. Phys., Vol. 86 No. 8, pp. 4588-4593

 

Journal

 

 

 

 

 

 

 

 

 

176.

 

1999

 

T. Mukai, S. Nakamura “Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown epitaxially laterally overgrown GaN substrates”

 

Jpn. J. Appl. Phys., Vol. 38 No. 10, pp. 5735-5739

 

Journal

 

 

 

 

 

 

 

 

 

177.

 

1999

 

S. Nakamura “InGaN-based blue light-emitting diodes and laser diodes”

 

J. Cryst. Growth, Vol. 201/202, pp. 290-295

 

Journal

 

 

 

 

 

 

 

 

 

178.

 

1999

 

S. Nakamura “Present status of InGaN-based laser diodes”

 

Phys. Stat. Sol. (a), Vol. 176 Issue 1, pp. 15-22

 

Journal

 

 

 

 

 

 

 

 

 

179.

 

1999

 

S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates”

 

Mater. Sci. & Engin. B,

Vol. 59 Issue 1-3, pp. 370-375

 

Journal

 

 

 

 

 

 

 

 

 

180.

 

1999

 

Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride”

 

Physica B, Vol. 273/274, pp. 54-57

 

Journal

 

 

 

 

 

 

 

 

 

181.

 

1999

 

H. Asahi, K. Iwata, H. Tampo, T. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura, S. Gonda “Very strong photoluminescence emission from GaN grown on amorphous silica, substrate by gas source MBE”

 

J. Cryst. Growth, Vol. 201/202, pp. 371-375

 

Journal

 

 

 

 

 

 

 

 

 

182.

 

1999

 

S. Nakamura “Blue light emitting laser diodes”

 

Thin Solid Films, Vol. 343-344, pp. 345-349

 

Journal

 

 

 

 

 

 

 

 

 

183.

 

1999

 

S.F. Chichibu, A.C. Abare, M.P. Mack, M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Sota, S. Nakamura “Optical properties of InGaN quantum wells”

 

Mater. Sci. & Engin. B,

Vol. 59 Issue 1-3, pp. 298-306

 

Journal

 

 

 

 

 

 

 

 

 

184.

 

1999

 

S. Nakamura “InGaN-based violet laser diodes”

 

Semicond, Sci. Technol., Vol. 14 No. 6, pp. R27-R40

 

Journal

 

 

 

 

 

 

 

 

 

185.

 

1999

 

S. Nakamura “Development of violet InGaN-based laser diodes”

 

Jpn. Soc. Appl. Phys., Vol. 68 No. 7, pp. 793-796

 

Journal

 

 

 

 

 

 

 

 

 

186.

 

1999

 

T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura “Structural and vibrational properties of GaN”

 

J. Appl. Phys., Vol. 86 No. 4, pp. 1860-1866

 

Journal

 

 

 

 

 

 

 

 

 

187.

 

1999

 

T.J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, H. Morkoc “Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN”

 

Appl. Phys. Lett., Vol. 74 No. 22, pp. 3353-3355

 

Journal

 

 

 

 

 

 

 

 

 

188.

 

1999

 

Y. Narukawa, Y. Kawakami, Sg. Fujita, S. Nakamura “Dimensionality of excitons in laser-diode structures composed of In(sub x)Ga(sub 1-x)N multiple quantum wells”

 

Phys. Rev. B, Vol. 59 No. 15, pp. 10283-10288

 

Journal

 

 

 

 

 

 

 

 

 

189.

 

1999

 

S. Nakamura “Development of violet InGaN-based laser diodes”

 

Oyo Buturi, Vol. 68 No. 7, pp. 793-796

 

Journal

 

 

 

 

 

 

 

 

 

190.

 

1999

 

T. Azuhata, K. Shimada, T. Deguchi, T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of an InGaN active layer in ultraviolet light emitting diode”

 

Jpn. J. Appl. Phys., Vol. 38 No. 9 A/B, pp. L975-L977

 

Journal

 

 

 

 

 

 

 

 

 

191.

 

1999

 

T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, S. Nakamura “Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure”

 

Jpn. J. Appl. Phys., Vol. 38 No. 8B, pp. L914-L916

 

Journal

 

 

 

 

 

 

 

 

 

192.

 

1999

 

T. Mukai, M. Yamada, S. Nakamura “Characteristic of InGaN-based UV/blue/green/amber/red light emitting diode”

 

Jpn. J. Appl. Phys., Vol. 38 No. 7A,

pp. 3976-3981

 

Journal

 

 

 

 

 

 

 

 

 

193.

 

1999

 

T. Mukai, S. Nakamura “White and UV LEDs”

 

Oyo Buturi, Vol. 68 No. 2, pp. 152-155

 

Journal

 

 

 

 

 

 

 

 

 

194.

 

1999

 

Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, S. Nakamura “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In/sub0.02/Ga/sub 0.98/N active layer”

 

Appl. Phys. Lett., Vol. 74 No. 4, pp. 558-560

 

Journal

 

 

 

 

 

 

 

 

 

195.

 

1999

 

S.F. Chichibu, K. Sota, K. Wada, S.P. DenBaars, S. Nakamura “Spectroscopic studies in InGaN quantum wells”

 

MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 2.7

 

Journal

 

 

 

 

 

 

 

 

 

196.

 

1999

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “InGaN/GaN/AlGaN-based LEDs and laser diodes”

 

MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 1.1

 

Journal

 

 

 

 

 

 

 

 

 

197.

 

1999

 

S.F. Chichibu, T. Deguchi, T. Sota, K. Wada, S.P. DenBaars, T. Mukai, S. Nakamura “Properties of quantum well excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, blue, green, amber light emitting diode structures”

 

Phys. Stat. Sol.,  Vol. 176 Issue 1, pp. 85-90

 

Journal

 

 

 

 

 

 

 

 

 

198.

 

1999

 

T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Two-phonon absorption spectra in wurzite GaN”

 

Applied Physics Letters,

Vol. 75 No. 14, pp. 2076-2078

 

Journal

 

 

 

 

 

 

 

 

 

199.

 

1999

 

T. A. Kennedy, E. R. Glaser, W. E. Carlos, P. P. Ruden, S. Nakamura “Symmetry of electrons and holes in lightly photo-excited InGaN LEDs”

 

MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1, G7.4

 

Journal

 

200.

 

2000

 

S. Nakamura, F. Chichibu Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

 

Taylor & Francis: London and New York

 

Book

 

 

 

 

 

 

 

 

 

201.

 

2000

 

S. Nakamura, S. Pearton, G. Fasol The Blue Laser Diode (The Complete Story) 2nd Ed.

 

Springer-Verlag: Heidelberg

 

Book

 

 

 

 

 

 

 

 

 

202.

 

2000

 

S. Nakamura “InGaN-based laser diodes”

 

Japan Society of Applied Physics International, No. 1

 

Journal

 

 

 

 

 

 

 

 

 

203.

 

2000

 

S.F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi., H. Nakanishi, T. Azuhata, S. Nakamura “Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth”

 

Appl. Phys. Lett., Vol. 76 No. 12, pp. 1576-1578

 

Journal

 

 

 

 

 

 

 

 

 

204.

 

2000

 

S.F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K.H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes”

 

Appl. Phys. Lett., Vol. 76 No. 13, pp. 1671-1673

 

Journal

 

 

 

 

 

 

 

 

 

205.

 

2000

 

S.F. Chichibu, A. Shikanai, T. Deguchi, A. Setoguchi, R. Nakai, H. Nakanishi, K. Wada, S.P. DenBaars, T. Sota, S. Nakamura “Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells”

 

Jpn. J. Appl. Phys., Vol. 39 No. 4B, pp. 2417-2424

 

Journal

 

 

 

 

 

 

 

 

 

206.

 

2000

 

S. Nakamura “Role of alloy fluctuations in InGaN-based LEDs and laser diodes”

 

Mater. Sci. Forum,

Vols. 338-342, pp. 1609-1614

 

Journal

 

 

 

 

 

 

 

 

 

207.

 

2000

 

S.F. Chichibu, A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, T. Sota, O. Brandt, K.H. Ploog, T. Mukai, S. Nakamura “Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction”

 

Phys. Stat. Sol. (a), Vol. 180, pp. 321-325

 

Journal

 

 

 

 

 

 

 

 

 

208.

 

2000

 

S.F. Chichibu, T. Azuhata, T. Sota, T. Mukai, S. Nakamura “Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes”

 

J. Appl. Phys., Vol. 88 No. 9, pp. 5153-5157

 

Journal

 

 

 

 

 

 

 

 

 

209.

 

2000

 

S. Nakamura “InGaN-based UV/blue/green LED and LD structure”

 

Handbook of Thin Film Devices, Vol. 2 Semiconductor Optical and Electro-Optical Devices,  pp. 225-263

 

Journal

 

 

 

 

 

 

 

 

 

210.

 

2000

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “Blue InGaN-based laser diodes with an emission wavelength of 450 nm”

 

Appl. Phys. Lett.,

Vol. 76 No. 1, pp. 22-24

 

Journal

 

 

 

 

 

 

 

 

 

211.

 

2000

 

T. Fujita, T. Hasegawa, M. Haraguchi, T. Okamoto, M. Fukui, S. Nakamura “Determination of second-order nonlinear optical susceptibility of GaN films on sapphire”

 

Jpn. J. Appl. Phys., Vol. 39 No. 5A, pp. 2610-2613

 

Journal

 

 

 

 

 

 

 

 

 

212.

 

2000

 

S. Nakamura “UV/blue/green InGaN-based LEDs and laser diodes grown on epitaxially laterally overgrown GaN”

 

IEICE Transactions on Electronics, Vol. E83-C

No. 4, pp. 529-535

 

Journal

 

 

 

 

 

 

 

 

 

213.

 

2000

 

P. Fischer, J. Christen, S. Nakamura “Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting diode”

 

Jpn. J. Appl. Phys., Vol. 39 No. 2B, pp. L129-L132

 

Journal

 

 

 

 

 

 

 

 

 

214.

 

2000

 

A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu, S. Nakamura “A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure”

 

Appl. Phys. Lett.,

Vol. 76 No. 4, pp. 454-456

 

Journal

 

 

 

 

 

 

 

 

 

215.

 

2000

 

K. Torii, T. Koga, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “An attenuated-total-reflection study on the surface phonon polariton in GaN”

 

J. Phys. Condens. Matter, Vol. 12 No. 31, pp. 7041-7044

 

Journal

 

 

 

 

 

 

 

 

 

216.

 

2000

 

K. Torii, M. Ono, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “Raman scattering from phonon-polaritons in GaN”

 

Phys. Rev. B, Vol. 62 No. 16, pp. 10861-10866

 

Journal

 

 

 

 

 

 

 

 

 

217.

 

2000

 

T. Azuhata, M. Ono, K. Torii, T. Sota, S.F. Chichibu, S. Nakamura “Forward Raman scattering by quasilongitudinal optical phonons in GaN”

 

Journal of Applied Physics, Vol. 88 No. 9, pp. 5202-5205

 

Journal

 

 

 

 

 

 

 

 

 

218.

 

2000

 

M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto “Structural analysis of In/sub x/Ga/sub 1-x/N single quantum wells by coaxial-impact collision ion scattering”

 

Appl. Phys. Lett., Vol. 77 No. 16, pp. 2512-2514

 

Journal

 

 

 

 

 

 

 

 

 

219.

 

2000

 

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, S. Nakamura “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

 

J. Luminescence,Vol. 87-89, pp. 1196-1198

 

Journal

 

 

 

 

 

 

 

 

 

220.

 

2000

 

H. Kudo, H. Ishibashi, R. S. Zheng, Y. Yamada, T. Taguchi, S. Nakamura, G. Shinomiya “Ultraviolet emission properties in InxGa1-xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies”

 

J. Luminescence, Vol. 87-89, pp. 1199-1201

 

Journal

 

 

 

 

 

 

 

 

 

221.

 

2000

 

Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, S. Nakamura “Dimensionality of exitons in InGaN-based light emitting devices”

 

Phys. Stat. Sol. A, Vol. 178, No. 1, pp. 331-336

 

 

 

222.

 

2001

 

M. Yoshimoto, J. Saraie, S. Nakamura

“Low-temperature microscopic photoluminescence images of epitaxially laterally overgrown GaN”

 

Jpn. J. Appl. Phys., Vol. 40 P. 2 No. 4B, pp. L386-L388

 

Journal

 

 

 

 

 

 

 

 

 

223.

 

2001

 

A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, S. Nakamura

“Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergentic positron beams”

 

J. Appl. Phys., Vol. 90 No. 1, pp. 181-186

 

Journal

 

 

 

 

 

 

 

 

 

224.

 

2001

 

K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota, S. Nakamura “Excitonic polariton structures in wurtzite GaN”

 

Physica B, Vol. 302 No. 1, pp. 181-186

 

Journal

 

 

 

 

 

 

 

 

 

225.

 

2001

 

S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura “Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes”

 

Physica Status Solidi A, Vol. 183 No. 1, pp. 91-98

 

Journal

 

 

 

 

 

 

 

 

 

226.

 

2001

 

S. F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes”

 

Appl. Phys. Lett., Vol. 78 No. 5, p. 679

 

Journal

 

 

 

 

 

 

 

 

 

227.

 

2001

 

Y. Kawakami, Y. Narukawa, K. Omae, S. Nakamura, S. Fujita “Pump and probe spectroscopy of InGaN multi-quantum well bases laser diodes”

 

Materials Science and Engineering B, Vol. 82 No. 1-3, pp. 188-193

 

Journal

 

 

 

 

 

 

 

 

 

228.

 

2001

 

G. A. Sukach, P. S. Smertenko, P. F. Oleksenko, S. Nakamura “Analysis of the active region of overheating temperature in green LEDs based on group III nitrides”

 

Technical Physics, Vol. 46 No. 4, pp. 438-441

 

Journal

 

 

 

 

 

 

 

 

 

229.

 

2001

 

S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura “Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy”

 

Applied Physics Letters, Vol. 79 No. 22, pp. 3600-3602

 

Journal

 

 

 

 

 

 

 

 

 

230.

 

2002

 

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”

 

Mater. Sci. & Tech. B, 93, 39-48

 

Journal

 

231.

 

2002

 

S. F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S. P. DenBaars, S. Nakamura, H. Okumura “Recombination dynamics of localized excitons in cubic phase InxGa1‑xN/GaN multiple quantum wells on 3C-SiC/Si (001)”

 

Phys. Stat. Sol. B, 234 (3), 746-749

 

Journal

 

 

 

 

 

 

 

 

 

232.

 

2002

 

M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars

“Higher efficiency InGaN laser diodes with an improved quantum well capping configuration”

 

Appl. Phys. Lett., 81 (22): 4275-4277

 

Journal

 

 

 

 

 

 

 

 

 

233.

 

2002

 

Piprek, J; Nakamura, S “Physics of high-power InGaN/GaN lasers”

 

IEEE Proc.- Optoelec., 149 (4): 145-151

 

Journal

 

 

 

 

 

 

 

 

 

234.

 

2003

 

S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura: “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells”

 

J. Appl. Physics, 93 (4), 2051-2054

 

Journal

235.

 

2003

 

S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura “Recombination dynamics of localized excitons in cubic InxG1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate”

 

J. Vac. Sci. & Techno., 21 (4), 1856-1862

 

Journal

 

 

 

 

 

 

 

 

 

236.

 

2003

 

B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura “Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy”

 

Appl. Phys. Lett., 83 (8), 1554-1556

 

Journal

 

 

 

 

 

 

 

 

 

237.

 

2003

 

N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati “Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope”

 

J. Appl. Phys., 94 (7), 4315-4319

 

Journal

 

 

 

 

 

 

 

 

 

238.

 

2003

 

B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura “Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy”

 

Appl. Phys. Lett., 83 (4), 644-646

 

Journal

 

 

 

 

 

 

 

 

 

239.

 

2004

 

T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars “Radiative and nonradiative processes in strain free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques”

 

 

J. Appl. Phys., 95 (5), 2495-2504

 

Journal

240.

 

2004

 

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”

 

 

Appl. Phys. Lett., 84 (6), 855-857

 

Journal

241.

 

2004

 

Y. Wu, A. Hanlon, J.F. Kaeding, R. Sharma, P.T. Fini, S. Nakamura, J.S. Speck  “Effect of nitridation on polarity, microstructure, and morphology of A1N films”

 

 

Appl. Phys. Lett., 84 (6), 912-914

 

 

Journal

242.

 

2004

 

P.R. Tavernier, T. Margalith, J. Williams, D.S. Green, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura, D.R. Clarke  “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”

 

 

J.of Cryst. Growth 264, 150-158

 

Journal

243.

 

2004

 

T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura  “Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique”

 

 

Jpn. J. of Appl. Phys., 43(3B), L411-413

 

Journal

244.

 

2004

 

T. Koida, S.F. Chichibu, T. Sota, M.D. Craven, B.A. Haskell, J.S. Speck, S.P. DenBaars, S. Nakamura  “Improved quantum efficiency in nonpolar (1120) A1GaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth”

 

 

Appl. Phys. Lett, 84 (19), 3768-3770

 

Journal

245.

 

2004

 

Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. DenBaars, S. Nakamura, E.L. Hu  “Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N- Face GaN with Simple Photo-Enhanced Chemical Wet Etching”

 

 

Jpn. J. of Appl.  Phys., 43 (5A), L637-639

 

Journal

246.

 

2004

 

M. McLaurin, B. Haskell, S. Nakamura, J.S. Speck  “Gallium adsorption onto (1120) gallium nitride surfaces”

 

 

J. of Appl. Phys., 96 (1), 327-334

 

Journal

247.

 

2004

 

E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu  “Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching”

 

 

Appl. Phys. Lett., 85 (5), 762-764

 

Journal

248.

 

2004

 

T. Koida, Y. Uchinuma, J. Kikuchi, K.R. Wang, M. Terazaki, T. Onuma, J.F. Kaeding, R. Sharma, S. Nakamura, S.F. Chichibu  “Improved surface morphology in GaN homoepitaxy y NH3-source molecular-beam epitaxy”

 

 

J. Vac. Sci. Tech. B, 22 (4), 2158-2164

 

Journal

249.

 

2005

 

J.F. Kaeding, Y. Wu, T. Fujii, R. Sharma, P.T. Fini, J.S. Speck, S. Nakamura  “Growth and laser-assisted liftoff of low dislocation density A1N thin films for deep-UV light-emitting diodes”

 

 

J. of Crys. Growth, 272, 257-263

 

Journal

250.

 

2005

 

K. Fujito, T. Hashimoto, K. Samonji, J.S. Speck, S. Nakamura  “Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates”

 

 

J. of Crystal Growth, 272, 370-376

 

Journal

251.

 

2005

 

E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu  “Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical  etching”

 

 

Appl. Phys. Lett., 85 (22), 5179-5181

 

Journal

252.

 

2005

 

A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra  “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak”

 

 

Appl. Phys. Lett, 85 (22), 5143-5145

 

Journal

253.

 

2005

 

A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra  “Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN”

 

 

Appl. Phys. Lett., 86, 031901

 

Journal

254.

 

2005

 

B.A. Haskell, T.J. Baker, M.D. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura  “Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy”

 

 

Appl. Phys. Lett., 86, 111917

 

Journal

255.

 

2005

 

B.A. Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura  “ Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy”

 

 

J. of Elec. Mater., 43 (4) 357-360

 

Journal

256.

 

2005

 

G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck, S. Keller, S. Nakamura, S.P. DenBaars   “Intensity dependent time-resolved photoluminescence studies of GaN/A1GaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN”

 

 

Phys. Stat. Sol.A 202 (5), 846-849

 

Journal

257.

 

2005

 

T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra  “Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”

 

 

Appl. Phys. Lett., 86, 151918

 

Journal

 

258.

 

2005

 

T. Hashimoto, K. Fujito, K. Samonji, J.S. Speck, S. Nakamura “Growth of AlN by the chemical vapor reaction process”

 

 

Jpn. J. of Appl. Phys., 44 (2), 869-873

 

Journal

259.

 

2005

 

A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates”

 

 

Jpn. J. of Appl. Phys., 44 (5), L173-L175

 

Journal

260.

 

2005

 

R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching”

 

 

Appl. Phys. Lett., 87, 051107

 

Journal

261.

 

2005

 

T. Hashimoto, K. Fujito, F. Wu, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura  “Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia”

 

 

Jpn. J. of Appl. Phys., 44 (25), L797-L799

 

Journal

262.

 

2005

 

S. Ghosh, P. Misra, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck

“Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”

 

 

J. of Appl. Phys., 98, 026105

 

Journal

263.

 

2005

 

A. Chakraborty, T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra  “Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates”

 

 

Jpn. J. of Appl. Phys., 44 (30), L945-L947

 

Journal

264.

 

2005

 

T.J. Baker, B.A. Haskell, F. Wu, P.T. Fini, J.S. Speck, S. Nakamura  “Characterization of planar semipolar gallium nitride films on spinel substrates”

 

 

Jpn. J. of Appl. Phys., 44 (29), L920-L922

 

Journal

265.

 

2005

 

A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty  “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction”

 

 

Appl. Phys. Lett., 87, 101107

 

Journal

266.

 

2005

 

H. Masui, A. Chakraborty, B.A. Haskell, U.K. Mishra, J.S. Speck, S. Nakamura, S.P. DenBaars  “Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate”

 

 

Jpn. J. of Appl. Phys., 44 (43), L1329-L1332

 

Journal

267.

 

2005

 

R. Sharma, P.M. Pattison, H. Masui, R.M. Farrell, T.J. Baker, B.A. Haskell, F. Wu, S.P. DenBaars, J.S. Speck, S. Nakamura

 “Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode”

 

 

Appl. Phys. Lett., 87, 231110

 

Journal

268.

 

2005

 

Y.S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier  “GaN blue photonic crystal membrane nanocavities”

 

 

Appl. Phys. Lett., 87, 243101

 

Journal

269.

 

2005

 

T. Hashimoto, K. Fujito, M. Saito, J.S. Speck, S. Nakamura  “Ammonothermal growth of GaN on an over-1-inch seed crystal”

 

 

Jpn. J. of Appl. Phys. , 44 (52), L1570-L1572

 

Journal

270.

 

2006

 

C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu “Visible resonant modes in GaN-based photonic crystal membrane cavities”

 

 

Appl. Phys. Lett., 88, 031111

 

Journal

271.

 

2006

 

A. David, T. Fujii, E. Matioli, R. Sharma, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty  “GaN light-emitting diodes with Archimedean lattice photonic crystals”

 

 

Appl. Phys. Lett., 88, 073510

 

Journal

272.

 

2006

 

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S.P. DenBaars, E.L. Hu, C. Weisbuch, H. Benisty  “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution”

 

 

Appl. Phys. Lett., 88, 061124

 

Journal

273.

 

2006

 

A. Chakraborty, B.A. Haskell, H. Masui, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra  “Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation”

 

 

Jpn. J. of Appl. Phys., 45 (2A), 739-741

 

Journal

274.

 

2006

 

I. Waki, m. Iza, J.S. Speck, S.P. DenBaars, S. Nakamura  “Etching of Ga-face and N-face GaN by inductively coupled plasma”

 

 

Jpn. J. of Appl. Phys., 45(2A), 720-723

 

Journal

275.

 

2006

 

J. Piprek, R. Farrell, S.P. DenBaars, S. Nakamura  “Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers”

 

 

IEEE Photonics Technology Letters, 18 (1), 7-9

 

Journal

276.

 

2006

 

T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S. Nakamura  “Characterization of planar semipolar gallium nitride films on sapphire substrates”

 

 

Jpn. J. of Appl. Phys., 45 (6), L154-L157

 

Journal

277.

 

2006

 

T. Onuma, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu  “Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells”

 

 

Appl. Phys. Lett., 88, 111912

 

Journal

278.

 

2006

 

A. David, T. Fujii, B. Moran, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty

“Photonic crystal laser lift-off GaN light-emitting diodes”

 

 

Appl. Phys. Lett., 88, 133514

 

Journal

279.

 

2006

 

P. Misra, U. Behn, O. Brandt, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck  “Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy”

 

 

Appl .Phys. Lett., 88, 161920

 

Journal

280.

 

2006

 

Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S “Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm”

 

 

Phys. Stat. Sol. A  203 (7), 1783-1786

 

Journal

281.

 

2006

 

C. Roder, S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura   “Strain in a-plane GaN layers grown on r-plane sapphire substrates”

 

 

Phys. Stat. Sol. A 203 (7): 1672-1675

 

Journal

282.

 

2006

 

T. Koyama, M. Sugawara, Y. Uchinuma, J.F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, S.F. Chichibu  “Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates”

 

 

Phys. Stat. Sol. A 203 (7), 1603-1606

 

Journal

283.

 

2006

 

T. Hashimoto, K. Fujito, R. Sharma, E.R. Letts, P.T. Fini, J.S. Speck, S. Nakamura

“Phase selection of microcrystalline GaN synthesized in supercritical ammonia”

 

 

J. of Crystal Growth, 291, 100-106

 

Journal

284.

 

2006

 

F.S. Diana, A. David, I. Meinel, R. Sharma, C. Weisbuch, S. Nakamura, P.M. Petroff “Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure”

 

Nano Lett. 6 (6), 1116-1120

 

Journal

 

285.

 

2006

 

Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS

“Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire”

 

 

Phys. Stat. Sol. B, 243 (7): 1441-1445

 

Journal

 

286.

 

2006

 

Kaeding JF, Iza M, Sato H, DenBaars SP, Speck JS, Nakamura S

“Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition”

 

 

Jpn. J. Appl. Phys., 45 (21):  L536–L538

 

Journal

 

287.

 

2006

 

Onuma T, Chakraborty A, Haskell A, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF

“Exciton dynamics in nonpolar (1120) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”

 

 

Phys. Stat. Sol. C, 3 (6) 2082–2086

 

Journal

 

288.

 

2006

 

Paskov PP, Schifano R, Malinauskas T, Paskova T, Bergman JP, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S

 “Photoluminescence of a-plane GaN:

comparison between MOCVD and HVPE grown layers”

 

 

Phys. Stat. Sol. C, 3 (6) 1499–1502

 

Journal

 

 

 

289*

 

 

2006

 

“Strain-induced polarization in wurtzite III-nitride semipolar layers”

A. Romanov, T.Baker, S. Nakamura, J. Speck

 

Journal of Applied Physics 100 023522

 

Journal

 

 

 

 

 

 

 

 

 

 

 

290.

 

2006

 

“A semipolar (103) InGaN/GaN green light emitting diode”

R. Sharma, P. M. Pattison, T. Baker, B. Haskell, R. Farrell, H. Masui, F. Wu, S. DenBaars, J. Speck, S. Nakamura

 

Materials Research Society Symposium Proceedings Vol 892 0892-FF0719-02.1-6

 

Journal

 

 

 

 

 

 

 

 

 

 

 

291.

 

2006

 

“Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light emitting diodes on (10) GaN templates”

A. Chakraborty, T. Onuma, T. Baker, S. Keller, S. Chichibu, S. DenBaars, S. Nakamura, U. Mishra

 

Materials Research Society Symposium Proceedings, Vol 892 0892-FF07-09-EE05-09.1-6

 

Journal

 

 

 

 

 

 

 

 

 

 

 

292.

 

2006

 

“Optical properties of nonpolar a-plane GaN layers”

P.P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura

 

Superlattices and Microstructures, 40 253-261

 

Journal

 

 

 

 

 

 

 

 

 

 

 

293.

 

2006

 

“First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes”

H. Masui, T. Baker, R. Sharma, P. Pattison, M. Iza, H. Zhong, S. Nakamura and S. DenBaars

 

Japanese Journal of Applied Physics, Vol 45, No 34 L904-L906

 

Journal

 

 

 

 

 

 

 

 

 

 

 

294.

 

2006

 

“Effects of Phosphor Application Geometry on White Light-Emitting Diodes”

H. Masui, S. Nakamura and S. DenBaars

 

Japanese Journal of Applied Physics, Vol 45, No 34, L910-L912

 

Journal

 

 

 

 

 

 

 

 

 

 

 

295.

 

2006

 

“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates”

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu

 

Applied Physics Letters 89 091906

 

Journal

 

 

 

 

 

 

 

 

 

 

 

296.

 

2006

 

“Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding”

A. Murai, D. Thompson, C.Y. Chen, U. Mishra, S. Nakamura and S. DenBaars

 

Japanese Journal of Applied Physics, Vol 45, No 39, L1045-L1047

 

Journal

 

 

 

 

 

 

 

 

 

 

 

297.

 

2006

 

“Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding”

A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, and S. DenBaars

 

Applied Physics Letters, 89, 171116

 

Journal

 

 

 

 

 

 

 

 

 

 

 

298.

 

2006

 

“Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature”

H. Masui, M. Schmidt, A. Chakraborty, S. Nakamuraand S. DenBaars

 

Japanese Journal of Applied Physics, Vol 45, No 10A, 7661-7666

 

Journal

 

 

 

 

 

 

 

 

 

 

 

299.

 

2006

 

“Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors”

S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakrabort, T. Koyama, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sota

 

Nature Materials, Vol 5, 810-816

 

Journal

 

 

 

 

 

 

 

 

 

 

 

300.

 

2006

 

“Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN”

A. Chakraborty, K. C. Kim, F. Wu, B. Haskell, S. Keller, J. Speck, S. Nakamura, S. DenBaars and U. Mishra

 

Japanese Journal of Applied Physics, Vol 45, No 11, 8659-8661

 

Journal

 

 

 

 

 

 

 

 

 

 

 

301.

 

2006

 

“Realization of high hole concentrations in Mg doped semipolar (10) GaN”

J. F. Kaeding, H. Asamizu, H. Sato, M. Iza, T. E. Mates, S. P. DenBaars, J. S. Speck, and S. Nakamura

 

Applied Physics Letters 89 020104

 

Journal

 

 

 

 

 

 

 

 

 

 

 

302.

 

2006

 

“Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy”

D. Kamber, Y. Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura

 

Journal of crystal Growth, 297, 321-325

 

Journal

 

 

 

 

 

 

 

 

 

 

 

303.

 

2006

 

“Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (112)-plane GaN”

H. Masui, T. Baker, M. Iza, H. Zhong, S. Nakamura, and S. DenBaars

 

Journal of Applied Physics, 100, 113109

 

Journal

 

 

 

 

 

 

 

 

 

 

 

304.

 

2006

 

“Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates”

C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. Paskov, B. Monemar, U. Behn, B. Haskell, P. Fini, and S. Nakamura

 

Journal of Applied Physics, 100, 103511

 

Journal

 

 

 

 

 

 

 

 

 

 

 

305.

 

2006

 

“Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths”

Y.S. Choi, C. Meier, R. Sharma, K. Hennessy, E. Haberer, S. Nakamura, and E. Hu

 

Materials Research Society Symposium Proceedings, Vol 892, 0892-FF20-06.1

 

Journal

 

 

 

 

 

 

 

 

 

 

 

306.

 

2007

 

“Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers”

V. Darakchieva T. Paskova, M. Schubert, P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. Haskell, P.T. Fini, J. Speck and S. Nakamura

 

Journal of Crystal Growth, 300, 233-238

 

Journal

 

 

 

 

 

 

 

 

 

 

 

307.

 

2007

 

“Seeded Growth of GaN by the Basic Ammonothermal Method”

T. Hashimoto, M. Saito, K. Fujito, F. Wu, J. Speck, S. Nakamura

 

Journal of Crystal Growth, 305, 311-316

 

Journal

 

 

 

 

 

 

 

 

 

 

 

308.

 

2007

 

“Gallium-Nitride-Based Microcavity Light-Emitting Diodes with Air-Gap Distributed Bragg Reflectors”

R. Sharma, Y.S. Choi, C.F. Wang, A. David, C. Weisbuch, S. Nakamura, E. Hu

 

Applied Physics Letters, 91, 211108

 

Journal

 

 

 

 

 

 

 

 

 

 

 

309.

 

2007

 

“Impacts of Dislocation Bending and Impurity Incorporation on the Local Cathodoluminescence Spectra of GaN Grown by Ammonothermal Method”

S. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. Speck, S. Nakamura

 

Applied Physics Letters, 91, 251911

 

Journal

 

 

 

 

 

 

 

 

 

 

 

310.

 

2007

 

“Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy”

T. Koyama, M. Sugawara, T. Hoshi, A. Uedono J. Kaeding, R. Sharma, S. Nakamura, S. Chichibu

 

Applied Physics Letters, 90, 241914

 

Journal

 

 

 

 

 

 

 

 

 

 

 

311.

 

2007

 

“Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness”

P. Morgan Pattison, A. David, R. Sharma, C. Weisbuch, S. DenBaars, and S. Nakamura

 

Applied Physics Letters, 90, 031111

 

Journal

 

 

 

 

 

 

 

 

 

 

 

312.

 

2007

 

“Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy”

U. Behn, P. Misra, H. Grahn, B. Imer, S. Nakamura, S. DenBaars, J. Speck

 

Phys. Stat. Sol A, 204, No 1, 299-303

 

Journal

 

 

 

 

 

 

 

 

 

 

 

313.

 

2007

 

“Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films”

A. Chakraborty, B. Haskell, F. Wu, S. Keller, S. DenBaars, S. Nakamura, J. Speck, and U. Mishra

 

Japanese Journal of Applied Physics, Vol 46 No 2, 542-546

 

Journal

 

 

 

 

 

 

 

 

 

 

 

314.

 

2007

 

“High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates”

A. Tyagi, H. Zhong, N. Fellows, M. Iza, J. Speck, S. DenBaars, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46 No 7, L129-L131

 

Journal

 

 

 

 

 

 

 

 

 

 

 

315.

 

2007

 

“High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes”

M. Schmidt, K.C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. Speck

 

Japanese Journal of Applied Physics, Vol 46 No 7, L126-L128

 

Journal

 

 

 

 

 

 

 

 

 

 

 

316.

 

2007

 

“Room Temperature Continuous-Wave Lasing in GaN/InGaN Microdisks”

A. Tamboli, E. haberer, R. Sharma, K. Lee, S. Nakamura, E. Hu

 

Nature Photonics, Vol 1, 61-64

 

Journal

 

 

 

 

 

 

 

 

 

 

 

317.

 

2007

 

“Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy”

D. Kamber, Y. Wu, E. Letts, S. DenBaars, J. Speck, S. Nakamura, and S. Newman

 

Applied Physics Letters, 90, 122116

 

Journal

 

 

 

 

 

 

 

 

 

 

 

318.

 

2007

 

“Defect-mediated surface morphology of nonpolar m-plane GaN”

A. Hirai, B. A. Haskell, M. B. McLaurin, F. Wu, M. C. Schmidt, K. C. Kim, T. J. Baker, S. P. DenBaars, S. Nakamura, and J. S. Speck

 

Applied Physics Letters, 90, 121119

 

Journal

 

 

 

 

 

 

 

 

 

 

 

319.

 

2007

 

“Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes”

M. Schmidt, K.C. Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 9, L190-L191

 

Journal

 

 

 

 

 

 

 

 

 

 

 

320.

 

2007

 

“AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes”

D. Feezell, M. Schmidt, R. Farrell, K.C. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46 No 13, L284-L286

 

Journal

 

 

 

 

 

 

 

 

 

 

 

321.

 

2007

 

“Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers”

D. F. Feezell, R. M. Farrell, M. C. Schmidt, H. Yamada, M. Ishida, S. P. DenBaars, D. A. Cohen, and S. Nakamura

 

Applied Physics Letters, 90, 181128

 

Journal

 

 

 

 

 

 

 

 

 

 

 

322.

 

2007

 

“Anisotropic Strain and Phonon deformation Potentials in GaN”

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, J. Speck, P. Fini, S. Nakamura

 

Physical Review B, 75, 195217

 

Journal

 

 

 

 

 

 

 

 

 

 

 

323.

 

2007

 

“Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs”

K.C. Kim, M. Schmidt, H. Sato, F. Wu,  N. Fellows , M. Saito, K. Fujito, J. Speck, S. Nakamura, S. DenBaars

 

Phys Stat Sol (RRL)1,  No 3, 125-127

 

Journal

 

 

 

 

 

 

 

 

 

 

 

324.

 

2007

 

“Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates”

A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 19, L444-L445

 

Journal

 

 

 

 

 

 

 

 

 

 

 

325.

 

2007

 

“High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate”

H. Zhong, A. Tyagi, N. Fellows, F. Wu, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura

 

Applied Physics Letters, 90, 233504

 

Journal

 

 

 

 

 

 

 

 

 

 

 

326.

 

2007

 

“Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient”

T. Hashimoto, F. Wu, J. Speck, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 22, L525-L527

 

Journal

 

 

 

 

 

 

 

 

 

 

 

327.

 

2007

 

“Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate”

H. Zhong, A. Tyagi, N. Fellows, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura

 

IEEE Electronics Letters, Vol 43, No 15, 825-826

 

Journal

 

 

 

 

 

 

 

 

 

 

 

328.

 

2007

 

“High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate”

H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. Chung, M. Saito, K. Fujito, S. DenBaars, S. Nakamura

 

Phys Stat Sol (RRL) 1,  No 4, 162-164

 

Journal

 

 

 

 

 

 

 

 

 

 

 

329.

 

 

2007

 

“Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”

T. Onuma, T. Koyama, A. Chakraborty, M. McLaurin, B. Haskell, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, T. Sota, S. Chichibu

 

Journal of Vacuum Science and Technology B, Vol 25, No 4, 1524-1528

 

Journal

 

 

 

 

 

 

 

 

 

 

 

330.

 

2007

 

“Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents”

H. Masui, H. Sato, H. Asamizu, M. Schmidt, N. Fellows, S. Nakamura, and S. DenBaars

 

Japanese Journal of Applied Physics Vol 46, No 25, L627-L629

 

Journal

 

 

 

 

 

 

 

 

 

 

 

331.

 

2007

 

“Direct Evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes”

H. Masui, N. Fellows, H.Sato, S. Nakamura, S. DenBaars

 

Applied Optics Vol 46, No 23, 5974-5978

 

Journal

 

 

 

 

 

 

 

 

 

 

 

332.

 

2007

 

“Progress in the growth of nonpolar gallium nitride”

B. A. Haskell, S. Nakamura , S. P. DenBaars , J. S. Speck

 

Phys Stat Sol B 244, No 8, 2847-2858

 

Journal

 

 

 

 

 

 

 

 

 

 

 

333.

 

2007

 

“A GaN bulk crystal with improved structural quality grown by the ammonothermal method”

T. Hashimoto, F. Wu, J. Speck, S, Nakamura

 

Nature Materials Vol 6, 568-571

 

Journal

 

 

 

 

 

 

 

 

 

 

 

334.

 

2007

 

“Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes”

R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 32, L761-L763

 

Journal

 

 

 

 

 

 

 

 

 

 

 

335.

 

2007

 

“Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques”

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, T. Sota

 

Philosophical Magazine, Vol 87, No 13, 2019-2039

 

Journal

 

 

 

 

 

 

 

 

 

 

 

336.

 

2007

 

“Mega-Cone Blue LEDs Based on ZnO/GaN Direct Wafer Bonding”

A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, S. DenBaars

 

Phys Stat Sol C, 4, No 7, 2756-2759

 

Journal

 

 

 

 

 

 

 

 

 

 

 

337.

 

2007

 

“Direct Water Photoelectrolysis with Patterned n-GaN”

I. Waki, D. Cohen, R. Lal, U. Mishra, S. DenBaars, S. Nakmura

 

Applied Physics Letters, 91, 093519

 

Journal

 

 

 

 

 

 

 

 

 

 

 

338.

 

2007

 

“Photoelectrochemical Properties of Nonpolar and Semipolar GaN”

K. Fujii, Y. Iwaki, H. Masui, T. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. Speck, S. DenBaars, S. Nakamura, and K. Ohkawa

 

Japanese Journal of Applied Physics, Vol 46, No 10, A 6573-6578

 

Journal

 

 

 

 

 

 

 

 

 

 

 

339.

 

2007

 

“Nonpolar gallium nitride laser diodes are the next new blue”

D. Feezell, S. Nakamura, S. DenBaars, J. Speck

 

Laser Focus World, October Issue 79-83

 

Magazine

 

 

 

 

 

 

 

 

 

 

 

340.

 

2007

 

“High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate”

K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 40, L960-L962

 

Journal

 

 

 

 

 

 

 

 

 

 

 

341.

 

2007

 

“Growth of Bulk GaN Crystals by the Basic Ammonothermal Method”

T. Hashimoto, F.Wu, J. Speck, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 37, L889-L891

 

Journal

 

 

 

 

 

 

 

 

 

 

 

342.

 

2007

 

“Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition”

K.C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. DenBaars, J. Speck and K. Fujito

 

Applied Physics Letters, 91, 181120

 

Journal

 

 

 

 

 

 

 

 

 

 

 

343.

 

2007

 

“Formation and reduction of pyramidal hillocks on m-plane {1100} GaN”

A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito

 

Applied Physics Letters, 91, 191906

 

Journal

 

 

 

 

 

 

 

 

 

 

 

344.

 

2007

 

“Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature”

H. Masui, M. Schmidt, K. C. Kim, A. Chakraborty, S. Nakamura, and S. DenBaars

 

Japanese Journal of Applied Physics, Vol 46, No 11, 7309-7310

 

Journal

 

 

 

 

 

 

 

 

 

 

 

345.

 

2007

 

“Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes”

H. Yamada, K. Iso, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura

 

Japanese Journal of Applied Physics, Vol 46, No 46, L 1117-L1119

 

Journal

 

 

 

 

 

 

 

 

 

 

 

346.

 

2007

 

“Impact of strain on free-exciton resonance energies in wurtzite AlN”

H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, T. Hoshi, P. Cantu, R. Sharma, J. Kaeding, S. Keller, U. Mishra, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, J. Speck, S. DenBaars, S. Nakamura, T. Koyama, T. Onuma, and S. Chichibu

 

Journal Of Applied Physics, 102, 123707

 

Journal

 

 

 

 

 

 

 

 

 

 

 

347.

 

2007

 

“Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes”

H. Masui, S. Nakamura, S. DenBaars

 

Applied Optics, Vol 47, No 1 88-92

 

Journal

 

 

 

 

 

 

 

 

 

 

 

348.

 

2007

 

Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes”

D. Feezell, S. DenBaars, J. Speck, S. Nakamura

 

Compound Semiconductor Integrated Circuit Symposium IEEE 1-4

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

 

 

349.

 

2007

 

“Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)”

B.Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars

 

Journal of Materials Research, Vol 23, No 2, 551-555

 

Journal

 

 

 

 

 

 

 

 

 

 

 

350.

 

2007

 

“Status and Perspectives of the Ammonothermal Growth of GaN Substrates”

T. Hashimoto, F. Wu, M. Saito, K. Fujito, J.Speck, S. Nakamura

 

Journal of Crystal Growth, 310, 876-880

 

Journal

 

 

 

 

 

 

 

 

 

 

 

351.

 

2007

 

“Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells”

Z. Chen, N. Fichtenbaum, D. Brown, S. Keller, U.K. Mishra, S.P. Denbaars,  and S. Nakamura

 

Journal of Electronic Materials, Vol 37, No 5, 546-549

 

Journal

 

 

 

 

 

 

 

 

 

 

 

352.