Publications
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No. |
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Year |
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Authors and Title |
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Publisher |
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Category |
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1. |
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1989 |
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S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy” |
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J. Cryst. Growth, Vol. 97, pp. 303-309 |
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Journal |
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2. |
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1990 |
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S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697 |
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Journal |
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3. |
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1991 |
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S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth” |
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Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023 |
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Journal |
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4. |
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1991 |
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S. Nakamura “Analysis of real-time monitoring using interference effects” |
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Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353 |
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Journal |
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5. |
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1991 |
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S. Nakamura “In situ monitoring of GaN growth using interference effects” |
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Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628 |
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Journal |
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6. |
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1991 |
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S. Nakamura “GaN growth using GaN buffer layer” |
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Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707 |
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Journal |
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7. |
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1991 |
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S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers” |
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Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711 |
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Journal |
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8. |
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1991 |
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S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 30 No. 12A, pp. L1998-L2001 |
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Journal |
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9. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 2B, pp. L139-L142 |
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Journal |
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10. |
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1992 |
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S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 5A, pp. 1258-1266 |
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Journal |
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11. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers” |
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J. Appl. Phys., Vol. 71, No. 11, pp. 5543-5549 |
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Journal |
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12. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers” |
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Jpn. J. Appl. Phys., Vol. 31 No. 9A, pp. 2883-2888 |
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Journal |
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13. |
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1992 |
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S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 10B, pp. L1457-L1459 |
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Journal |
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14. |
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1993 |
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S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 32 No. 1A/B. pp. L8-L11 |
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Journal |
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15. |
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1993 |
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S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 32 No. 1A/B, pp. L16-L19 |
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Journal |
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16. |
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1993 |
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S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 32 No. 3A, pp. L338-L341 |
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Journal |
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17. |
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1993 |
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S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes” |
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Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392 |
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Journal |
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18. |
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1993 |
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S. Nakamura “InGaN blue-light-emitting diodes” |
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Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915 |
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Journal |
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19. |
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1993 |
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S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films” |
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J. Appl. Phys., Vol. 74 No. 6, pp. 3911-3915 |
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Journal |
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20. |
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1994 |
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S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure” |
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No. 602, pp. 93-102 |
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21. |
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1994 |
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S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes” |
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Appl. Phys. Lett., Vol. 64 No. 13, pp. 1687-1689 |
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Journal |
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22 |
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1994 |
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S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display” |
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Nikkei Electronics Asia, June 1994 |
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Magazine |
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23. |
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1994 |
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S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes” |
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Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83 |
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Conference Proceeding |
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24. |
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1994 |
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S. Nakamura “Realized high bright blue laser-emitting diodes” |
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Scientific American, October 1994 |
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Magazine |
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25. |
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1994 |
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S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes” |
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Microelectronics Journal, Vol. 25, pp. 651-659 |
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Journal |
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26. |
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1994 |
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S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes” |
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J. Cryst. Growth, Vol. 145, pp. 911-917 |
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Journal |
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27. |
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1994 |
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S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs” |
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Mat. Res. Symp. Proc., Vol. 339, pp. 173-178 |
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Journal |
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28. |
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1994 |
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S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes” |
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J. Appl. Phys., Vol. 76, pp. 8189-8191 |
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Journal |
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29. |
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1995 |
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S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers” |
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J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786 |
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Journal |
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30. |
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1995 |
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S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays” |
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IEEE, May 1995 |
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Journal |
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31. |
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1995 |
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S. Nakamura “InGaN/AlGaN blue-light-emitting diodes” |
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J. Vac. Sci. & Tech. A, Vol. 13 No. 3, pp. 705-710 |
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Journal |
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32. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures” |
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Jpn. J. Appl. Phys., Vol. 34 No. 7A, pp. L797-L799 |
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Journal |
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33. |
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1995 |
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S. Nakamura “LED full color display” |
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IEICE, Vol. 78, No. 7, pp. 683-688 |
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Journal |
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34. |
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1995 |
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S. Nakamura “InGaN light-emitting diodes with quantum well structures” |
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Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP) |
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Conference Proceeding |
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35. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 34 No. 10B, pp. L1332-L1335 |
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Journal |
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36. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’ |
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Appl. Phys. Lett., Vol. 67 No. 13, pp. 1868-1870 |
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Journal |
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37. |
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1995 |
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S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED” |
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Optik, Vol. 24, No. 11, pp. 673-678 |
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Journal |
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38. |
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1995 |
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T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN” |
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J. Phys. Condens. Matter, Vol. 7 No. 10, pp. L129-L133 |
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Journal |
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39. |
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1995 |
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S. Nakamura “III-V Nitride light-emitting diodes” |
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OSA Proceedings on Advanced Solid-State Lasers, Vol. 24, pp. 20-24 |
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Journal |
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40. |
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1995 |
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W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes” |
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Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378 |
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Journal |
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41. |
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1995 |
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S. Nakamura “Recent developments of GaN based LEDs” |
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Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14 |
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Conference Proceedings |
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42. |
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1996 |
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S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205 |
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Conference Proceedings |
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43. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes” |
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Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76 |
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Journal |
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44. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets” |
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Jpn. J. Appl. Phys., Vol. 35 No. 2B, pp. L217-L220 |
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Journal |
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45. |
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1996 |
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S. Nakamura “Pulsed operation of violet laser diodes” |
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Electr. Mater.,March issue, pp. 159-164 |
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Journal |
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46. |
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1996 |
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S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates” |
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Appl. Phys. Lett., Vol. 68 No. 15, pp. 2105-2107 |
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Journal |
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47. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes” |
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Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271 |
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Journal |
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48. |
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1996 |
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S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers” |
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Appl. Phys. Lett., Vo. 68 No. 26, pp. 3766-3768 |
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Journal |
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49. |
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1996 |
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S. Nakamura “InGaN-based blue/green LEDs and laser diodes” |
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Adv. Mater., Vol. 8 No. 8, pp. 689-692 |
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Journal |
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50. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K” |
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Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036 |
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Journal |
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51. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes” |
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Appl. Phys. Lett., Vol. 69 No. 26, pp. 4056-4058 |
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Journal |
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52. |
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1996 |
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S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures” |
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Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190 |
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Journal |
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53. |
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1996 |
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S. Nakamura “Present status and future prospects of GaN-based light emitting devices” |
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Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685 |
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Journal |
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54. |
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1996 |
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T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN” |
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Physica B, Vol. 219-220, pp. 493-495 |
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Journal |
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55. |
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1996 |
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S. Nakamura “Fabrication of blue and green nitride light-emitting diodes” |
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Inst. Phys. Conf. Ser. No. 142, Chapter 6 |
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Conference Proceeding |
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56. |
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1996 |
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S. Nakamura “III-V nitride-based light-emitting diodes” |
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Diamond and Related Materials, Vol. 5 Issue 1-3, pp. 496-500 |
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Journal |
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57. |
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1996 |
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Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer” |
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Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416 |
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Journal |
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58. |
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1996 |
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K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers” |
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Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789 |
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Journal |
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59. |
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1996 |
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W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes” |
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Mat. Res. Soc. Symp. Proc. 395, pp. 673-678 |
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Conference Proceedings |
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60. |
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1996 |
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S. Nakamura “InGaN light-emitting diodes with quantum-well structures” |
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Mat. Res. Soc. Symp. Proc. 395, pp. 879-887 |
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Conference Proceedings |
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61. |
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1996 |
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S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes” |
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Proceedings of SPIE, Vol. 2693, pp. 43-56 |
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Conference Proceedings |
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62. |
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1996 |
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T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374 |
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Conference Proceedings |
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63. |
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1996 |
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S. Nakamura “First successful III-V nitride based laser diodes” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124 |
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Conference Proceedings |
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64. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes” |
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Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570 |
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Journal |
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65. |
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1996 |
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S. Nakamura “III-V nitride based blue/green LEDs and LDs” |
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23rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18 |
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Conference Proceedings |
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66. |
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1996 |
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T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation” |
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23rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544 |
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Conference Proceedings |
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67. |
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1996 |
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W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN-based single-quantum-well light-emitting diodes” |
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23rd ICPS Proc.,Berlin, July 21-26, Vol. 4, pp. 2921-2924 |
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Conference Proceedings |
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68. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Ridge-geometry InGaN multi-quantum-well-structure laser diodes” |
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Appl. Phys. Lett., Vol. 69 No. 10, pp. 1477-1479 |
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Journal |
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69. |
|
1996 |
|
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers” |
|
J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786 |
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Journal |
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70. |
|
1996 |
|
K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, S. Nakamura “Luminescence spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes” |
|
MRS Internet Journal of Nitride Semiconductor Research, Vol. 1 |
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Journal |
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71. |
|
1997 |
|
A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A.Kuramata, K. Horino, S. Nakamura “Biaxial strain dependence of exciton resonance energies in wurzite GaN” |
|
J. Appl. Phys., Vol. 81 No. 1, pp. 417-424 |
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Journal |
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72. |
|
1997 |
|
Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura “Recombination dynamics of localized excitons in In(sub 0.20)Ga(sub 0.80)N-In(sub 0.05)Ga(sub0.95)N multiple quantum wells” |
|
Phys. Rev. B, Vol. 55 No. 4, pp. R1938-R1941 |
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Journal |
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73. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure” |
|
Appl. Phys. Lett., Vol. 70 No. 5, pp. 616-618 |
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Journal |
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74. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime” |
|
Appl. Phys. Lett., Vol. 70 No. 7, pp. 868-870 |
|
Journal |
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75. |
|
1997 |
|
S. Nakamura “Blue-green light-emitting diodes and violet laser diodes” |
|
MRS Bulletin, Vol. 22 No. 2, pp. 29-35 |
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Journal |
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76. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diode with a lifetime of 27 hours” |
|
Appl. Phys. Lett., Vol. 70 No. 11, pp.1417-1419 |
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Journal |
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77. |
|
1997 |
|
S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, S. Yoshida “Exciton spectra of cubic and hexagonal GaN epitaxial films” |
|
Jpn. J. Appl. Phys., Vol 36 No. 3B, pp. 1976-1983 |
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Journal |
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78. |
|
1997 |
|
S. Nakamura “GaN-based blue/green semiconductor laser” |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 36 No. 3B, pp. 435-442 |
|
Journal |
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|
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79. |
|
1997 |
|
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Optical properties of InGaN” |
|
Bulletin of Solid State Physics and Applications |
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Journal |
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|
80. |
|
1997 |
|
Y. Kawakami, S. Saijyo, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN-single quantum well-based light emitting diodes” |
|
Bulletin of Solid State Physics and Applications |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
81. |
|
1997 |
|
S. Nakamura “Characteristics of RT-CW operated bluish-purple laser diodes” |
|
Bulletin of Solid State Physics and Applications |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
82. |
|
1997 |
|
Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, S. Nakamura “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm” |
|
Appl. Phys. Lett., Vol. 70 No. 8, pp. 981-983 |
|
Journal |
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83. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Subband emission of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation” |
|
Appl. Phys. Lett., Vol. 70 No. 20, pp. 2753-2755 |
|
Journal |
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|
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|
84. |
|
1997 |
|
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Luminescence from localized states in InGaN epilayers” |
|
Appl. Phys. Lett., Vol. 70 No. 21, pp. 2822-2824 |
|
Journal |
|
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|
|
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|
85. |
|
1997 |
|
S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sota, S. Nakamura “Urbach-Matienssen tails in a wurzite GaN epilayer” |
|
Appl. Phys. Lett., Vol. 70 No. 25, pp. 3440-3442 |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
86. |
|
1997 |
|
S. Nakamura “InGaN-based blue laser diodes” |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3 No. 3, pp. 712-718 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
87. |
|
1997 |
|
S. Nakamura “Success story with blue LEDs” |
|
Science Journal Kagaku, Vol. 67 No. 6, pp.438-450 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
89. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes” |
|
Jpn. J. Appl. Phys., Vol. 36 No. 8B, pp. L1059-L1061 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
90. |
|
1997 |
|
S. Chichibu, K. Wada, S. Nakamura “Spatially resolved cathodoluminescence spectra of InGaN quantum wells” |
|
Appl. Phys. Lett., Vol. 71 No. 16, pp. 2346-2348 |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
91. |
|
1997 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices” |
|
Jpn. J. Appl. Phys., Vol. 36 No. 12A, pp. L1568-L1571 |
|
Journal |
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|
|
|
|
|
|
|
|
|
|
92. |
|
1997 |
|
S. Nakamura “InGaN quantum-well structure blue LEDs and LDs” |
|
Journal of Luminescence, Vol. 72-74, pp. 55-58 |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
93. |
|
1997 |
|
S. Nakamura “Present and future aspects of blue light emitting devices” |
|
Applied Surface Science, Vol. 113-114, pp. 689-697 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
94. |
|
1997 |
|
S. Nakamura “First III-V-nitride-based violet laser diodes” |
|
J. Cryst. Growth, Vol. 170 Issue 1-4, pp. 11-15 |
|
Journal |
|
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|
|
|
|
|
|
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|
95. |
|
1997 |
|
S. Nakamura “First laser-diodes fabricated from III-V nitride based materials” |
|
Mater. Sci. & Engin. B, Vol. 43 Issue 1-3, pp. 258-264 |
|
Journal |
|
|
|
|
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|
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|
|
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|
96. |
|
1997 |
|
S. Nakamura “III-V nitride based light-emitting devices” |
|
Solid State Communications, Vol. 102 No. 2-3, |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
97. |
|
1997 |
|
S. Nakamura “RT-CW operation of InGaN multi-quantum-well structure laser diodes” |
|
Mater. Sci. & Engin. B, Vol. 50 Issue 1-3, pp. 277-284 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
98. |
|
1997 |
|
S. Nakamura “Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes” |
|
Semiconductors & Semimetals, Vol. 48, pp. 391-443 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
99. |
|
1997 |
|
G. Mohs, T. Aoki, M. Nagai, R. Shimano, M. Kuwata-Gonokami, S. Nakamura “Failure of the modal gain model in a GaN based laser diode” |
|
Solid State Communications, Vol. 104 No. 11, pp. 643-648 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
100. |
|
1997 |
|
S. Nakamura “Lessons from research of blue LEDs” |
|
J. Phys. Soc. Jpn., Vol. 52 No. 12, pp.924-925 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
101. |
|
1997 |
|
S. Nakamura “Room-temperature CW operation of GaN based laser diodes” |
|
The Review of Laser Engineering, Vol. 25 No. 7, pp. 498-503 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
102. |
|
1997 |
|
S. Nakamura “How I was led to the discovery of the InGaN-based blue/green LEDs” |
|
Semiconductor News, July-December 1997, pp. 87-92 |
|
Magazine |
|
|
|
|
|
|
|
|
|
|
|
103. |
|
1997 |
|
F. A. Ponce, D. Cherns, W. T. Young, J. W. Steeds, S. Nakamura “Observation of nanopipes and inversion domains in high quality GaN epitaxial layers” |
|
Mat. Res. Soc. Proc., 449, pp. 405-410 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
104. |
|
1997 |
|
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Recombination of localized excitons in InGaN single and multi-quantum well structures” |
|
Mat. Res. Soc. Proc., 449, pp. 653-658 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
105. |
|
1997 |
|
Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of the InGaN MQW grown by MOCVD” |
|
Mat. Res. Soc. Proc., 449, pp. 665-670 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
106. |
|
1997 |
|
W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of GaN-based single quantum well LEDs” |
|
Mat. Res. Soc. Symp. Proc., 449, pp. 757-767 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
107. |
|
1997 |
|
S. Nakamura “Characteristics of InGaN multi-quantum-well structure laser diodes” |
|
Mat. Res. Soc. Symp. Proc., 449, pp. 1135-1142 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
108. |
|
1997 |
|
S. Nakamura “Characteristics of RT-CW operated InGaN multi-quantum-well-structure laser diodes” |
|
MRS Internet J. Nitride Semicond. Res. 2, 5 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
109. |
|
1997 |
|
M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Brillouin scattering study of gallium nitride: elastic stiffness constants” |
|
Journal of Physics: Condensed Matter, Vol. 9 No. 1, pp. 241-248 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
110. |
|
1997 |
|
S. Nakamura “Present performance of InGaN based blue/green/yellow LEDs” |
|
Proceedings of SPIE, Vol. 3002, pp. 26-35 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
111. |
|
1997 |
|
T. Deguchi, A. Shikanai, T. Sota, S. Chichibu, N. Sarukura, H. Ohtaka, T. Yamanaka, S. Nakamura “Nanosecond pump-and-probe study of wurtzite GaN” |
|
Materials Science and Engineering, B50, pp. 180-182 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
112. |
|
1997 |
|
T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, S. Nakamura “Gain spectra in cw InGaN/GaN MQW laser diodes” |
|
Materials Science and Engineering, B50, pp. 251-255 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
113. |
|
1997 |
|
Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijo, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of localized excitons in self-formed InGaN quantum dots” |
|
Materials Science and Engineering B, Vol. 50 Issue 1-3, pp. 256-263 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
114. |
|
1997 |
|
V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, K. G. Zolina, S. Nakamura “Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes” |
|
J. Eur. Ceram. Soc., Vol. 17 No. 15/16, pp. 2033-2037 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
115. |
|
1997 |
|
D. Cherns, W. T. Young, M. A. Saunders, F. A. Ponce, S. Nakamura “The analysis of nanopipes and inversion domains in GaN thin films” |
|
Inst. Phys. Conf. Ser., No. 157, pp. 187-190 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
116. |
|
1997 |
|
S. Nakamura “Present status and future of blue LEDs and LDs” |
|
Rev. Laser Engin., Vol. 25 No. 12, pp. 850-854 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
117. |
|
1997 |
|
D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce, S. Nakamura “Observation of coreless dislocations in alpha-GaN” |
|
Journal Crystal Growth, Vol. 178 No. 1-2, pp. 201-206 |
|
Journal |
|
118. |
|
|
|
S. Nakamura, G. Fasol The Blue Laser Diode (The Complete Story) |
|
Springer-Verlag: Heidelberg |
|
Book |
|
|
|
|
|
|
|
|
|
|
|
119. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamado, T. Matsushita, H. Kiyoku, V. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate” |
|
Appl. Phys. Lett., Vol. 72 No. 2, pp. 211-213 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
120. |
|
1998 |
|
S. Nakamura “Applications of LEDs and LDs” |
|
Semiconductors & Semimetals, Vol. 50, pp. 431-457 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
121. |
|
1998 |
|
S. Nakamura “Progress with GaN-based blue/green LEDs and bluish-purple semiconductor LDs” |
|
Electronics and Communications in Japan, Vol. 81 No. 5, pp. 1-8 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
122. |
|
1998 |
|
A. Alemu, B. Gil, M. Julier, S. Nakamura “Optical properties of wurzite GaN epilayers growns on A-plane sapphire” |
|
Phys. Rev. B, Vol. 57 No.7, pp. 3761-3764 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
123. |
|
1998 |
|
S. Nakamura “Light emission moves into blue” |
|
Physics World, February 1998 |
|
Magazine |
|
|
|
|
|
|
|
|
|
|
|
124. |
|
1998 |
|
M. Julier, J. Campo, B. Gil, J.P. Lascaray, S. Nakamura “Determination of the spin-exchange interaction constant in wurzite GaN” |
|
Phys. Rev. B, Vol. 57 No. 12, pp. R6791-R6794 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
125. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates” |
|
Jpn. J. Appl. Phys., Vol. 37 No. 3B, pp. L309-L312 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
126. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kazaki, H. Umemoto, M. Sano, K. Chocho “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates” |
|
Appl. Phys. Lett., Vol. 72 No. 16, pp. 2014-2016 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
127. |
|
1998 |
|
S. Nakamura “InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained layer superlattices” |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4 No. 3, pp. 483-489 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
128. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420mW” |
|
Jpn. J. Appl. Phys., Vol. 37 No. 6A, pp. L627-L629 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
129. |
|
1998 |
|
T. Mukai, K. Takekawa, S. Nakamura “InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates” |
|
Jpn. J. Appl. Phys., Vol. 37 No. 7B, pp. L839-L841 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
130. |
|
1998 |
|
S. Chichibu, T. Sota, K. Wada, S. Nakamura “Exciton localization in InGaN quantum well devices” |
|
J. Vac. Sci. Technol. B, Vol. 16 No. 4, pp. 2204-2214 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
131. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates” |
|
Appl. Phys. Lett., Vol. 73 No. 6, pp. 832-834 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
132. |
|
1998 |
|
S. Nakamura “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes” |
|
Science, Vol. 281 No. 5379, pp. 956-961 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
133. |
|
1998 |
|
T. Mukai, M. Yamada, S. Nakamura “Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes” |
|
Jpn. J. Appl. Phys., Vol. 37, pp. L1358-L1361 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
134. |
|
1998 |
|
S. Nakamura “Materials issues for InGaN-based lasers” |
|
J. Elect. Mater., Vol. 27 No. 4, pp. 160-165 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
135. |
|
1998 |
|
S. Nakamura “Cathodoluminescence study on quantum microstructures” |
|
Jpn. Soc. Appl. Phys., Vol. 67 No. 7, pp. 798-801 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
136. |
|
1998 |
|
T. Mukai, D. Morita, S. Nakamura “High-power UV InGaN/AlGaN double-heterostructure LEDs” |
|
J. Cryst. Growth, Vol. 189/190, pp. 778-781 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
137. |
|
1998 |
|
G. Mohs, T. Aoki, R. Shimano, M. Kuwata-Gonokami, S. Nakamura “On the grain mechanism in GaN based laser diodes” |
|
Solid State Communications, Vol. 108 No. 2, pp. 105-110 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
138. |
|
1998 |
|
S. Nakamura “InGaN-based laser diodes” |
|
Annu. Rev. Mater. Sci., Vol. 28, pp. 125-152 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
139. |
|
1998 |
|
A. Alemu, M. Julier, J. Campo, B. Gil, D. Scalbert, J.-P. Lascaray “Optical anisotropy in GaN grown onto A-plane sapphire” |
|
E-MRS ’98 Spring Meeting, Strasbourg, France |
|
Conference proceeding |
|
|
|
|
|
|
|
|
|
|
|
140. |
|
1998 |
|
T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura “Luminescence spectra from InGaN multiquantum wells heavily doped with Si” |
|
Appl. Phys. Lett., Vol. 72 No. 25, pp. 3329-3331 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
141. |
|
1998 |
|
K. Ando, T. Yamaguchi, K. Koizumi, Y. Okuno, T. Abe, H. Kasada, A. Ishibashi, K. Nakano, S. Nakamura “Deep defect center characteristics of wide-bandgap II-IV and III-V blue laser materials” |
|
Proceedings of SPIE (1998, Jan. 26-29), San Jose, California |
|
Conference proceeding |
|
|
|
|
|
|
|
|
|
|
|
142. |
|
1998 |
|
S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours” |
|
MRS Bulletin, Vol. 23 No. 5, pp. 37-43 |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
143. |
|
1998 |
|
S. Nakamura, K. Kitamura, H. Umeya, H. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi “Bright electroluminescence from CdS quantum dot LED structures” |
|
Electronics Letters, Vol. 34 No. 25, pp. 2435-2436 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
144. |
|
1998 |
|
E.R. Glaser, T.A. Kennedy, W.E. Carlos, P.P. Ruden, S. Nakamura “Recombination processes in In/sub x/Ga/sub 1-x/N light-emitting diodes studied through optically detected magnetic resonance” |
|
Appl. Phys. Lett., Vol. 73 No. 21, pp. 3123-3125 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
145. |
|
1998 |
|
S. Nakamura, Y. Ueno, K. Tajima “Ultrafast (200-fs switching, 1.5-Tb/s demultiplexing) and high-repetition (10 GHz) operations of a polarization-discriminating symmetric Mach-Zehnder all-optical switch” |
|
IEEE Photonics Technology Letters,Vol. 10 No. 11, pp. 1572-1574 |
|
Journal |
|
146. |
|
|
|
|
|
|
|
|
|
|
|
1998 |
|
Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced activation of hydrogen-passivated magnesium in p-type GaN films” |
|
Jpn. J. Appl. Phys., Vol. 37 No. 8B, pp. L970-L971 |
|
Journal |
|
147. |
|
|
|
|
|
|
|
|
|
|
|
1998 |
|
Y. Kawakami, Y. Narukawa, K. Sawada, S. Nakamura “The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells” |
|
Electronics and Communications in Japan, Vol. 81 No. 7, pp. 45-56 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
148. |
|
1998 |
|
K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, T. Murashita “Cathodoluminescence study of quantum microstructures” |
|
Oyo Buturi, Vol. 67 No. 7, pp. 789-801 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
149. |
|
1998 |
|
S. Nakamura “Commercial blue LDs a step closer for Nichia” |
|
III-Vs Review, Vol. 11 No.2, pp. 28-32 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
150. |
|
1998 |
|
T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura “Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes” |
|
Semicond. Sci. and Technol., Vol. 13 No. 1, pp. 97-101 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
151. |
|
1998 |
|
Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, S. Fujita, S. Fujita, S. Nakamura “The mechanism of radiative recombination in light emitting devices composed of InGaN quantum wells” |
|
Transactions of the Institute of Electronics, Information and Communication Engineers C-II, Vol. J81C-II No. 1, pp. 78-88 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
152. |
|
1998 |
|
T. Mukai, H. Narimatsu, S. Nakamura “Amber InGaN-based light-emitting diodes operable at high ambient temperatures” |
|
Jpn. J. Appl. Phys., Vol. 37 No. 5A, pp. L479-L481 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
153. |
|
1998 |
|
Z. L. Weber, S. Ruvimov, W. Swider, Y. Kim, J. Washburn, S. Nakamura, R. S. Kern, Y. Chen, J. W. Yang “Role of dopants and impurities on pinhole formation; defects formed at InGaN/GaN and AlGaN/GaN quantum wells” |
|
Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 375-380 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
154. |
|
1998 |
|
S. Chichibu, T. Deguchi, T. Sota, K. Wada, S. Nakamura “Localized excitons in InGaN” |
|
Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 613-624 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
155. |
|
1998 |
|
S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours” |
|
Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 1145-1156 |
|
Conference Proceedings |
|
|
|
|
|
|
|
|
|
|
|
156. |
|
1998 |
|
Y. Narukawa, S. Saijyo, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN single quantum well LEDs” |
|
J. Crystal Growth, Vol. 189/190, pp. 593-596 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
157. |
|
1998 |
|
Y. Narukawa, K. Sawada, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of localized excitons in InGaN single quantum wells” |
|
J. Crystal Growth, Vol. 189/190, pp. 606-610 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
158. |
|
1998 |
|
W. E. Carlos, S. Nakamura “Magnetic resonance studies of GaN-based LEDs” |
|
J. Crystal Growth, Vol. 189/190, pp. 794-797 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
159. |
|
1998 |
|
Y. Zohta, H. Kuroda, R. Nii, S. Nakamura “Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes” |
|
J. Crystal Growth, Vol. 189/190, pp. 816-819 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
160. |
|
1998 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Present status of InGaN/GaN/AlGaN-based laser diodes” |
|
J. Crystal Growth, Vol. 189/190, pp. 820-825 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
161. |
|
1998 |
|
S. Nakamura “High-power InGaN-based blue laser diodes with a long lifetime” |
|
J. Crystal Growth, Vol. 195, pp. 242-247 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
162. |
|
1998 |
|
S. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” |
|
Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
163. |
|
1998 |
|
S. Nakamura “Recent developments in InGaN-based LEDs and LDs” |
|
Acta Physica Polonica A, Vol. 95, pp. 153-164 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
164. |
|
1998 |
|
S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, I. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates with a fundamental transverse mode” |
|
Jpn. J. Appl. Phys., Vol. 37 Part 2 No. 9A-B, L1020-L1022 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
165. |
|
1998 |
|
S. Nakamura “Progress of GaN-based blue/green LEDs and bluish-purple semiconductor LDs” |
|
Trans. Inst. Electron. Inf. Comm. Engin., Vol. J81C-II No. 1, pp. 89-96 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
166. |
|
1998 |
|
D. Cherns, W. T. Young, M. Sanders, J. W. Steeds, F. A. Ponce, S. Nakamura “Determination of the atomic structure of inversion domain boundaries in alpha-GaN by transmission electron microscopy” |
|
Philosophical Magazine A (Physics of Condensed Matter: Structure, Defects, and Mechanical Properties), Vol. 77 No. 1, pp. 273-286 |
|
Magazine |
|
|
|
|
|
|
|
|
|
|
|
167. |
|
1999 |
|
T. Mukai, M. Yamada, S. Nakamura “InGaN-based UV/blue/green/amber/red LEDs” |
|
Light Emitting Diodes: Research, Manufacturing, and Applications III (SPIE), Vol. 3621 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
168. |
|
1999 |
|
T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Infrared lattice absorption in wurtzite GaN” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 2B, pp. L151-L153 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
169. |
|
1999 |
|
S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, T. Mukai “Violet InGaN/GaN/AlGaN-based laser diodes operable at 50˚ C with a fundamental transverse mode” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 3A, pp. L226-L229 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
170. |
|
1999 |
|
S.F. Chichibu, H. Marchand, M.S. Minskey, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Feisher, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” |
|
Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
171. |
|
1999 |
|
M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura “Brillouin scattering study of bulk GaN” |
|
J. Appl. Phys., Vol. 85 No. 12, pp. 8502-8504 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
172. |
|
1999 |
|
S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN’ |
|
J. Mater. Rsrch., Vol. 14 No. 7, pp. 2716-2731 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
173. |
|
1999 |
|
K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Reflectance and emission spectra of excitonic polaritons in GaN” |
|
Phys. Rev. B, Vol. 60 No. 7, pp. 4723-4730 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
174. |
|
1999 |
|
T. Deguchi, K. Torii, K. Shimada, T. Sota, R. Matsuo, M. Sugiyami, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of InGaN active layer in ultraviolet light-emitting diode” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 9A/B, pp. L975-L977 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
175. |
|
1999 |
|
J.T. Torvik, J.I. Pankove, S. Nakamura, I. Grzegory, S. Porowski “The effect of threading dislocations, Mg-doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors” |
|
J. Appl. Phys., Vol. 86 No. 8, pp. 4588-4593 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
176. |
|
1999 |
|
T. Mukai, S. Nakamura “Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown epitaxially laterally overgrown GaN substrates” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 10, pp. 5735-5739 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
177. |
|
1999 |
|
S. Nakamura “InGaN-based blue light-emitting diodes and laser diodes” |
|
J. Cryst. Growth, Vol. 201/202, pp. 290-295 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
178. |
|
1999 |
|
S. Nakamura “Present status of InGaN-based laser diodes” |
|
Phys. Stat. Sol. (a), Vol. 176 Issue 1, pp. 15-22 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
179. |
|
1999 |
|
S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates” |
|
Mater. Sci. & Engin. B, Vol. 59 Issue 1-3, pp. 370-375 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
180. |
|
1999 |
|
Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride” |
|
Physica B, Vol. 273/274, pp. 54-57 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
181. |
|
1999 |
|
H. Asahi, K. Iwata, H. Tampo, T. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura, S. Gonda “Very strong photoluminescence emission from GaN grown on amorphous silica, substrate by gas source MBE” |
|
J. Cryst. Growth, Vol. 201/202, pp. 371-375 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
182. |
|
1999 |
|
S. Nakamura “Blue light emitting laser diodes” |
|
Thin Solid Films, Vol. 343-344, pp. 345-349 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
183. |
|
1999 |
|
S.F. Chichibu, A.C. Abare, M.P. Mack, M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Sota, S. Nakamura “Optical properties of InGaN quantum wells” |
|
Mater. Sci. & Engin. B, Vol. 59 Issue 1-3, pp. 298-306 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
184. |
|
1999 |
|
S. Nakamura “InGaN-based violet laser diodes” |
|
Semicond, Sci. Technol., Vol. 14 No. 6, pp. R27-R40 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
185. |
|
1999 |
|
S. Nakamura “Development of violet InGaN-based laser diodes” |
|
Jpn. Soc. Appl. Phys., Vol. 68 No. 7, pp. 793-796 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
186. |
|
1999 |
|
T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura “Structural and vibrational properties of GaN” |
|
J. Appl. Phys., Vol. 86 No. 4, pp. 1860-1866 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
187. |
|
1999 |
|
T.J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, H. Morkoc “Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN” |
|
Appl. Phys. Lett., Vol. 74 No. 22, pp. 3353-3355 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
188. |
|
1999 |
|
Y. Narukawa, Y. Kawakami, Sg. Fujita, S. Nakamura “Dimensionality of excitons in laser-diode structures composed of In(sub x)Ga(sub 1-x)N multiple quantum wells” |
|
Phys. Rev. B, Vol. 59 No. 15, pp. 10283-10288 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
189. |
|
1999 |
|
S. Nakamura “Development of violet InGaN-based laser diodes” |
|
Oyo Buturi, Vol. 68 No. 7, pp. 793-796 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
190. |
|
1999 |
|
T. Azuhata, K. Shimada, T. Deguchi, T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of an InGaN active layer in ultraviolet light emitting diode” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 9 A/B, pp. L975-L977 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
191. |
|
1999 |
|
T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, S. Nakamura “Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 8B, pp. L914-L916 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
192. |
|
1999 |
|
T. Mukai, M. Yamada, S. Nakamura “Characteristic of InGaN-based UV/blue/green/amber/red light emitting diode” |
|
Jpn. J. Appl. Phys., Vol. 38 No. 7A, pp. 3976-3981 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
193. |
|
1999 |
|
T. Mukai, S. Nakamura “White and UV LEDs” |
|
Oyo Buturi, Vol. 68 No. 2, pp. 152-155 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
194. |
|
1999 |
|
Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, S. Nakamura “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In/sub0.02/Ga/sub 0.98/N active layer” |
|
Appl. Phys. Lett., Vol. 74 No. 4, pp. 558-560 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
195. |
|
1999 |
|
S.F. Chichibu, K. Sota, K. Wada, S.P. DenBaars, S. Nakamura “Spectroscopic studies in InGaN quantum wells” |
|
MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 2.7 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
196. |
|
1999 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “InGaN/GaN/AlGaN-based LEDs and laser diodes” |
|
MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 1.1 |
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Journal |
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197. |
|
1999 |
|
S.F. Chichibu, T. Deguchi, T. Sota, K. Wada, S.P. DenBaars, T. Mukai, S. Nakamura “Properties of quantum well excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, blue, green, amber light emitting diode structures” |
|
Phys. Stat. Sol., Vol. 176 Issue 1, pp. 85-90 |
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Journal |
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198. |
|
1999 |
|
T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Two-phonon absorption spectra in wurzite GaN” |
|
Applied Physics Letters, Vol. 75 No. 14, pp. 2076-2078 |
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Journal |
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199. |
|
1999 |
|
T. A. Kennedy, E. R. Glaser, W. E. Carlos, P. P. Ruden, S. Nakamura “Symmetry of electrons and holes in lightly photo-excited InGaN LEDs” |
|
MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1, G7.4 |
|
Journal |
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200. |
|
2000 |
|
S. Nakamura, F. Chichibu Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes |
|
Taylor & Francis: London and New York |
|
Book |
|
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|
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201. |
|
2000 |
|
S. Nakamura, S. Pearton, G. Fasol The Blue Laser Diode (The Complete Story) 2nd Ed. |
|
Springer-Verlag: Heidelberg |
|
Book |
|
|
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|
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202. |
|
2000 |
|
S. Nakamura “InGaN-based laser diodes” |
|
Japan Society of Applied Physics International, No. 1 |
|
Journal |
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203. |
|
2000 |
|
S.F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi., H. Nakanishi, T. Azuhata, S. Nakamura “Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth” |
|
Appl. Phys. Lett., Vol. 76 No. 12, pp. 1576-1578 |
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Journal |
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204. |
|
2000 |
|
S.F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K.H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes” |
|
Appl. Phys. Lett., Vol. 76 No. 13, pp. 1671-1673 |
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Journal |
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205. |
|
2000 |
|
S.F. Chichibu, A. Shikanai, T. Deguchi, A. Setoguchi, R. Nakai, H. Nakanishi, K. Wada, S.P. DenBaars, T. Sota, S. Nakamura “Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells” |
|
Jpn. J. Appl. Phys., Vol. 39 No. 4B, pp. 2417-2424 |
|
Journal |
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|
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206. |
|
2000 |
|
S. Nakamura “Role of alloy fluctuations in InGaN-based LEDs and laser diodes” |
|
Mater. Sci. Forum, Vols. 338-342, pp. 1609-1614 |
|
Journal |
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207. |
|
2000 |
|
S.F. Chichibu, A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, T. Sota, O. Brandt, K.H. Ploog, T. Mukai, S. Nakamura “Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction” |
|
Phys. Stat. Sol. (a), Vol. 180, pp. 321-325 |
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Journal |
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208. |
|
2000 |
|
S.F. Chichibu, T. Azuhata, T. Sota, T. Mukai, S. Nakamura “Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes” |
|
J. Appl. Phys., Vol. 88 No. 9, pp. 5153-5157 |
|
Journal |
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|
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|
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|
|
|
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|
209. |
|
2000 |
|
S. Nakamura “InGaN-based UV/blue/green LED and LD structure” |
|
Handbook of Thin Film Devices, Vol. 2 Semiconductor Optical and Electro-Optical Devices, pp. 225-263 |
|
Journal |
|
|
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|
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|
|
|
|
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|
210. |
|
2000 |
|
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “Blue InGaN-based laser diodes with an emission wavelength of 450 nm” |
|
Appl. Phys. Lett., Vol. 76 No. 1, pp. 22-24 |
|
Journal |
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|
211. |
|
2000 |
|
T. Fujita, T. Hasegawa, M. Haraguchi, T. Okamoto, M. Fukui, S. Nakamura “Determination of second-order nonlinear optical susceptibility of GaN films on sapphire” |
|
Jpn. J. Appl. Phys., Vol. 39 No. 5A, pp. 2610-2613 |
|
Journal |
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|
212. |
|
2000 |
|
S. Nakamura “UV/blue/green InGaN-based LEDs and laser diodes grown on epitaxially laterally overgrown GaN” |
|
IEICE Transactions on Electronics, Vol. E83-C No. 4, pp. 529-535 |
|
Journal |
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|
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|
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|
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|
213. |
|
2000 |
|
P. Fischer, J. Christen, S. Nakamura “Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting diode” |
|
Jpn. J. Appl. Phys., Vol. 39 No. 2B, pp. L129-L132 |
|
Journal |
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|
214. |
|
2000 |
|
A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu, S. Nakamura “A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure” |
|
Appl. Phys. Lett., Vol. 76 No. 4, pp. 454-456 |
|
Journal |
|
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215. |
|
2000 |
|
K. Torii, T. Koga, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “An attenuated-total-reflection study on the surface phonon polariton in GaN” |
|
J. Phys. Condens. Matter, Vol. 12 No. 31, pp. 7041-7044 |
|
Journal |
|
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216. |
|
2000 |
|
K. Torii, M. Ono, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “Raman scattering from phonon-polaritons in GaN” |
|
Phys. Rev. B, Vol. 62 No. 16, pp. 10861-10866 |
|
Journal |
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|
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|
|
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217. |
|
2000 |
|
T. Azuhata, M. Ono, K. Torii, T. Sota, S.F. Chichibu, S. Nakamura “Forward Raman scattering by quasilongitudinal optical phonons in GaN” |
|
Journal of Applied Physics, Vol. 88 No. 9, pp. 5202-5205 |
|
Journal |
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|
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|
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|
218. |
|
2000 |
|
M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto “Structural analysis of In/sub x/Ga/sub 1-x/N single quantum wells by coaxial-impact collision ion scattering” |
|
Appl. Phys. Lett., Vol. 77 No. 16, pp. 2512-2514 |
|
Journal |
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|
|
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219. |
|
2000 |
|
T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, S. Nakamura “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution |
|
J. Luminescence,Vol. 87-89, pp. 1196-1198 |
|
Journal |
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|
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220. |
|
2000 |
|
H. Kudo, H. Ishibashi, R. S. Zheng, Y. Yamada, T. Taguchi, S. Nakamura, G. Shinomiya “Ultraviolet emission properties in InxGa1-xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies” |
|
J. Luminescence, Vol. 87-89, pp. 1199-1201 |
|
Journal |
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|
|
|
|
|
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|
221. |
|
2000 |
|
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, S. Nakamura “Dimensionality of exitons in InGaN-based light emitting devices” |
|
Phys. Stat. Sol. A, Vol. 178, No. 1, pp. 331-336 |
|
|
|
|
||||||||
|
222. |
|
2001 |
|
M. Yoshimoto, J. Saraie, S. Nakamura “Low-temperature microscopic photoluminescence images of epitaxially laterally overgrown GaN” |
|
Jpn. J. Appl. Phys., Vol. 40 P. 2 No. 4B, pp. L386-L388 |
|
Journal |
|
|
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|
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|
|
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223. |
|
2001 |
|
A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, S. Nakamura “Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergentic positron beams” |
|
J. Appl. Phys., Vol. 90 No. 1, pp. 181-186 |
|
Journal |
|
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|
|
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|
224. |
|
2001 |
|
K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota, S. Nakamura “Excitonic polariton structures in wurtzite GaN” |
|
Physica B, Vol. 302 No. 1, pp. 181-186 |
|
Journal |
|
|
|
|
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|
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|
225. |
|
2001 |
|
S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura “Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes” |
|
Physica Status Solidi A, Vol. 183 No. 1, pp. 91-98 |
|
Journal |
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|
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226. |
|
2001 |
|
S. F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes” |
|
Appl. Phys. Lett., Vol. 78 No. 5, p. 679 |
|
Journal |
|
|
|
|
|
|
|
|
|
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|
227. |
|
2001 |
|
Y. Kawakami, Y. Narukawa, K. Omae, S. Nakamura, S. Fujita “Pump and probe spectroscopy of InGaN multi-quantum well bases laser diodes” |
|
Materials Science and Engineering B, Vol. 82 No. 1-3, pp. 188-193 |
|
Journal |
|
|
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|
|
|
|
|
|
|
|
228. |
|
2001 |
|
G. A. Sukach, P. S. Smertenko, P. F. Oleksenko, S. Nakamura “Analysis of the active region of overheating temperature in green LEDs based on group III nitrides” |
|
Technical Physics, Vol. 46 No. 4, pp. 438-441 |
|
Journal |
|
|
|
|
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|
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|
229. |
|
2001 |
|
S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura “Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy” |
|
Applied Physics Letters, Vol. 79 No. 22, pp. 3600-3602 |
|
Journal |
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|
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|
|
|
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|
|
230. |
|
2002 |
|
E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)” |
|
Mater. Sci. & Tech. B, 93, 39-48 |
|
Journal |
|
231. |
|
2002 |
|
S. F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S. P. DenBaars, S. Nakamura, H. Okumura “Recombination dynamics of localized excitons in cubic phase InxGa1‑xN/GaN multiple quantum wells on 3C-SiC/Si (001)” |
|
Phys. Stat. Sol. B, 234 (3), 746-749 |
|
Journal |
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|
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|
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|
232. |
|
2002 |
|
M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars “Higher efficiency InGaN laser diodes with an improved quantum well capping configuration” |
|
Appl. Phys. Lett., 81 (22): 4275-4277 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
233. |
|
2002 |
|
Piprek, J; Nakamura, S “Physics of high-power InGaN/GaN lasers” |
|
IEEE Proc.- Optoelec., 149 (4): 145-151 |
|
Journal |
|
|
|
|
|
|
|
|
|
|
|
234. |
|
2003 |
|
S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura: “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells” |
|
J. Appl. Physics, 93 (4), 2051-2054 |
|
Journal |
|
235. |
|
2003 |
|
S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura “Recombination dynamics of localized excitons in cubic InxG1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate” |
|
J. Vac. Sci. & Techno., 21 (4), 1856-1862 |
|
Journal |
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|
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|
|
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|
236. |
|
2003 |
|
B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura “Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy” |
|
Appl. Phys. Lett., 83 (8), 1554-1556 |
|
Journal |
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237. |
|
2003 |
|
N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati “Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope” |
|
J. Appl. Phys., 94 (7), 4315-4319 |
|
Journal |
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|
|
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|
|
|
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|
238. |
|
2003 |
|
B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura “Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy” |
|
Appl. Phys. Lett., 83 (4), 644-646 |
|
Journal |
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|
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|
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|
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239. |
|
2004 |
|
T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars “Radiative and nonradiative processes in strain free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques”
|
|
J. Appl. Phys., 95 (5), 2495-2504 |
|
Journal |
|
240. |
|
2004 |
|
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”
|
|
Appl. Phys. Lett., 84 (6), 855-857 |
|
Journal |
|
241. |
|
2004 |
|
Y. Wu, A. Hanlon, J.F. Kaeding, R. Sharma, P.T. Fini, S. Nakamura, J.S. Speck “Effect of nitridation on polarity, microstructure, and morphology of A1N films”
|
|
Appl. Phys. Lett., 84 (6), 912-914
|
|
Journal |
|
242. |
|
2004 |
|
P.R. Tavernier, T. Margalith, J. Williams, D.S. Green, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura, D.R. Clarke “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”
|
|
J.of Cryst. Growth 264, 150-158 |
|
Journal |
|
243. |
|
2004 |
|
T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura “Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique”
|
|
Jpn. J. of Appl. Phys., 43(3B), L411-413 |
|
Journal |
|
244. |
|
2004 |
|
T. Koida, S.F. Chichibu, T. Sota, M.D. Craven, B.A. Haskell, J.S. Speck, S.P. DenBaars, S. Nakamura “Improved quantum efficiency in nonpolar (1120) A1GaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth”
|
|
Appl. Phys. Lett, 84 (19), 3768-3770 |
|
Journal |
|
245. |
|
2004 |
|
Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. DenBaars, S. Nakamura, E.L. Hu “Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N- Face GaN with Simple Photo-Enhanced Chemical Wet Etching”
|
|
Jpn. J. of Appl. Phys., 43 (5A), L637-639 |
|
Journal |
|
246. |
|
2004 |
|
M. McLaurin, B. Haskell, S. Nakamura, J.S. Speck “Gallium adsorption onto (1120) gallium nitride surfaces”
|
|
J. of Appl. Phys., 96 (1), 327-334 |
|
Journal |
|
247. |
|
2004 |
|
E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu “Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching”
|
|
Appl. Phys. Lett., 85 (5), 762-764 |
|
Journal |
|
248. |
|
2004 |
|
T. Koida, Y. Uchinuma, J. Kikuchi, K.R. Wang, M. Terazaki, T. Onuma, J.F. Kaeding, R. Sharma, S. Nakamura, S.F. Chichibu “Improved surface morphology in GaN homoepitaxy y NH3-source molecular-beam epitaxy”
|
|
J. Vac. Sci. Tech. B, 22 (4), 2158-2164 |
|
Journal |
|
249. |
|
2005 |
|
J.F. Kaeding, Y. Wu, T. Fujii, R. Sharma, P.T. Fini, J.S. Speck, S. Nakamura “Growth and laser-assisted liftoff of low dislocation density A1N thin films for deep-UV light-emitting diodes”
|
|
J. of Crys. Growth, 272, 257-263 |
|
Journal |
|
250. |
|
2005 |
|
K. Fujito, T. Hashimoto, K. Samonji, J.S. Speck, S. Nakamura “Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates”
|
|
J. of Crystal Growth, 272, 370-376 |
|
Journal |
|
251. |
|
2005 |
|
E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu “Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching”
|
|
Appl. Phys. Lett., 85 (22), 5179-5181 |
|
Journal |
|
252. |
|
2005 |
|
A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak”
|
|
Appl. Phys. Lett, 85 (22), 5143-5145 |
|
Journal |
|
253. |
|
2005 |
|
A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra “Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN”
|
|
Appl. Phys. Lett., 86, 031901 |
|
Journal |
|
254. |
|
2005 |
|
B.A. Haskell, T.J. Baker, M.D. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura “Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy”
|
|
Appl. Phys. Lett., 86, 111917 |
|
Journal |
|
255. |
|
2005 |
|
B.A. Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura “ Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy”
|
|
J. of Elec. Mater., 43 (4) 357-360 |
|
Journal |
|
256. |
|
2005 |
|
G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck, S. Keller, S. Nakamura, S.P. DenBaars “Intensity dependent time-resolved photoluminescence studies of GaN/A1GaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN”
|
|
Phys. Stat. Sol.A 202 (5), 846-849 |
|
Journal |
|
257. |
|
2005 |
|
T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra “Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”
|
|
Appl. Phys. Lett., 86, 151918 |
|
Journal
|
|
258. |
|
2005 |
|
T. Hashimoto, K. Fujito, K. Samonji, J.S. Speck, S. Nakamura “Growth of AlN by the chemical vapor reaction process”
|
|
Jpn. J. of Appl. Phys., 44 (2), 869-873 |
|
Journal |
|
259. |
|
2005 |
|
A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates”
|
|
Jpn. J. of Appl. Phys., 44 (5), L173-L175 |
|
Journal |
|
260. |
|
2005 |
|
R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching”
|
|
Appl. Phys. Lett., 87, 051107 |
|
Journal |
|
261. |
|
2005 |
|
T. Hashimoto, K. Fujito, F. Wu, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura “Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia”
|
|
Jpn. J. of Appl. Phys., 44 (25), L797-L799 |
|
Journal |
|
262. |
|
2005 |
|
S. Ghosh, P. Misra, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”
|
|
J. of Appl. Phys., 98, 026105 |
|
Journal |
|
263. |
|
2005 |
|
A. Chakraborty, T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates”
|
|
Jpn. J. of Appl. Phys., 44 (30), L945-L947 |
|
Journal |
|
264. |
|
2005 |
|
T.J. Baker, B.A. Haskell, F. Wu, P.T. Fini, J.S. Speck, S. Nakamura “Characterization of planar semipolar gallium nitride films on spinel substrates”
|
|
Jpn. J. of Appl. Phys., 44 (29), L920-L922 |
|
Journal |
|
265. |
|
2005 |
|
A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction”
|
|
Appl. Phys. Lett., 87, 101107 |
|
Journal |
|
266. |
|
2005 |
|
H. Masui, A. Chakraborty, B.A. Haskell, U.K. Mishra, J.S. Speck, S. Nakamura, S.P. DenBaars “Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate”
|
|
Jpn. J. of Appl. Phys., 44 (43), L1329-L1332 |
|
Journal |
|
267. |
|
2005 |
|
R. Sharma, P.M. Pattison, H. Masui, R.M. Farrell, T.J. Baker, B.A. Haskell, F. Wu, S.P. DenBaars, J.S. Speck, S. Nakamura “Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode”
|
|
Appl. Phys. Lett., 87, 231110 |
|
Journal |
|
268. |
|
2005 |
|
Y.S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier “GaN blue photonic crystal membrane nanocavities”
|
|
Appl. Phys. Lett., 87, 243101 |
|
Journal |
|
269. |
|
2005 |
|
T. Hashimoto, K. Fujito, M. Saito, J.S. Speck, S. Nakamura “Ammonothermal growth of GaN on an over-1-inch seed crystal”
|
|
Jpn. J. of Appl. Phys. , 44 (52), L1570-L1572 |
|
Journal |
|
270. |
|
2006 |
|
C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu “Visible resonant modes in GaN-based photonic crystal membrane cavities”
|
|
Appl. Phys. Lett., 88, 031111 |
|
Journal |
|
271. |
|
2006 |
|
A. David, T. Fujii, E. Matioli, R. Sharma, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty “GaN light-emitting diodes with Archimedean lattice photonic crystals”
|
|
Appl. Phys. Lett., 88, 073510 |
|
Journal |
|
272. |
|
2006 |
|
A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S.P. DenBaars, E.L. Hu, C. Weisbuch, H. Benisty “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution”
|
|
Appl. Phys. Lett., 88, 061124 |
|
Journal |
|
273. |
|
2006 |
|
A. Chakraborty, B.A. Haskell, H. Masui, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation”
|
|
Jpn. J. of Appl. Phys., 45 (2A), 739-741 |
|
Journal |
|
274. |
|
2006 |
|
I. Waki, m. Iza, J.S. Speck, S.P. DenBaars, S. Nakamura “Etching of Ga-face and N-face GaN by inductively coupled plasma”
|
|
Jpn. J. of Appl. Phys., 45(2A), 720-723 |
|
Journal |
|
275. |
|
2006 |
|
J. Piprek, R. Farrell, S.P. DenBaars, S. Nakamura “Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers”
|
|
IEEE Photonics Technology Letters, 18 (1), 7-9 |
|
Journal |
|
276. |
|
2006 |
|
T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S. Nakamura “Characterization of planar semipolar gallium nitride films on sapphire substrates”
|
|
Jpn. J. of Appl. Phys., 45 (6), L154-L157 |
|
Journal |
|
277. |
|
2006 |
|
T. Onuma, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu “Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells”
|
|
Appl. Phys. Lett., 88, 111912 |
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Journal |
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278. |
|
2006 |
|
A. David, T. Fujii, B. Moran, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty “Photonic crystal laser lift-off GaN light-emitting diodes”
|
|
Appl. Phys. Lett., 88, 133514 |
|
Journal |
|
279. |
|
2006 |
|
P. Misra, U. Behn, O. Brandt, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck “Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy”
|
|
Appl .Phys. Lett., 88, 161920 |
|
Journal |
|
280. |
|
2006 |
|
Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S “Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm”
|
|
Phys. Stat. Sol. A 203 (7), 1783-1786 |
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Journal |
|
281. |
|
2006 |
|
C. Roder, S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura “Strain in a-plane GaN layers grown on r-plane sapphire substrates”
|
|
Phys. Stat. Sol. A 203 (7): 1672-1675 |
|
Journal |
|
282. |
|
2006 |
|
T. Koyama, M. Sugawara, Y. Uchinuma, J.F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, S.F. Chichibu “Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates”
|
|
Phys. Stat. Sol. A 203 (7), 1603-1606 |
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Journal |
|
283. |
|
2006 |
|
T. Hashimoto, K. Fujito, R. Sharma, E.R. Letts, P.T. Fini, J.S. Speck, S. Nakamura “Phase selection of microcrystalline GaN synthesized in supercritical ammonia”
|
|
J. of Crystal Growth, 291, 100-106 |
|
Journal |
|
284. |
|
2006 |
|
F.S. Diana, A. David, I. Meinel, R. Sharma, C. Weisbuch, S. Nakamura, P.M. Petroff “Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure” |
|
Nano Lett. 6 (6), 1116-1120 |
|
Journal |
|
285. |
|
2006 |
|
Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS “Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire”
|
|
Phys. Stat. Sol. B, 243 (7): 1441-1445 |
|
Journal |
|
|
|
286. |
|
2006 |
|
Kaeding JF, Iza M, Sato H, DenBaars SP, Speck JS, Nakamura S “Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition”
|
|
Jpn. J. Appl. Phys., 45 (21): L536–L538 |
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Journal |
|
|
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287. |
|
2006 |
|
Onuma T, Chakraborty A, Haskell A, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF “Exciton dynamics in nonpolar (1120) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”
|
|
Phys. Stat. Sol. C, 3 (6) 2082–2086 |
|
Journal |
|
|
|
288. |
|
2006 |
|
Paskov PP, Schifano R, Malinauskas T, Paskova T, Bergman JP, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S “Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers”
|
|
Phys. Stat. Sol. C, 3 (6) 1499–1502 |
|
Journal |
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|||||||||
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2006 |
|
“Strain-induced polarization in wurtzite III-nitride semipolar layers” A. Romanov, T.Baker, S. Nakamura, J. Speck |
|
Journal of Applied Physics 100 023522 |
|
Journal |
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|
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|
|
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|
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290. |
|
2006 |
|
“A semipolar (103) InGaN/GaN green light emitting diode”R. Sharma, P. M. Pattison, T. Baker, B. Haskell, R. Farrell, H. Masui, F. Wu, S. DenBaars, J. Speck, S. Nakamura |
|
Materials Research Society Symposium Proceedings Vol 892 0892-FF0719-02.1-6 |
|
Journal |
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|
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|
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|
291. |
|
2006 |
|
“Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light emitting diodes on (10) GaN templates”A. Chakraborty, T. Onuma, T. Baker, S. Keller, S. Chichibu, S. DenBaars, S. Nakamura, U. Mishra |
|
Materials Research Society Symposium Proceedings, Vol 892 0892-FF07-09-EE05-09.1-6 |
|
Journal |
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292. |
|
2006 |
|
“Optical properties of nonpolar a-plane GaN layers” P.P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura |
|
Superlattices and Microstructures, 40 253-261 |
|
Journal |
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|
|
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293. |
|
2006 |
|
“First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes” H. Masui, T. Baker, R. Sharma, P. Pattison, M. Iza, H. Zhong, S. Nakamura and S. DenBaars |
|
Japanese Journal of Applied Physics, Vol 45, No 34 L904-L906 |
|
Journal |
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294. |
|
2006 |
|
“Effects of Phosphor Application Geometry on White Light-Emitting Diodes” |
|
Japanese Journal of Applied Physics, Vol 45, No 34, L910-L912 |
|
Journal |
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295. |
|
2006 |
|
“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu |
|
Applied Physics Letters 89 091906 |
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Journal |
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296. |
|
2006 |
|
“Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding” A. Murai, D. Thompson, C.Y. Chen, U. Mishra, S. Nakamura and S. DenBaars |
|
Japanese Journal of Applied Physics, Vol 45, No 39, L1045-L1047 |
|
Journal |
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297. |
|
2006 |
|
“Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, and S. DenBaars |
|
Applied Physics Letters, 89, 171116 |
|
Journal |
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298. |
|
2006 |
|
“Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature” H. Masui, M. Schmidt, A. Chakraborty, S. Nakamuraand S. DenBaars |
|
Japanese Journal of Applied Physics, Vol 45, No 10A, 7661-7666 |
|
Journal |
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299. |
|
2006 |
|
“Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors” S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakrabort, T. Koyama, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sota |
|
Nature Materials, Vol 5, 810-816 |
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Journal |
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300. |
|
2006 |
|
“Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN” A. Chakraborty, K. C. Kim, F. Wu, B. Haskell, S. Keller, J. Speck, S. Nakamura, S. DenBaars and U. Mishra |
|
Japanese Journal of Applied Physics, Vol 45, No 11, 8659-8661 |
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Journal |
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301. |
|
2006 |
|
“Realization of high hole concentrations in Mg doped semipolar (10) GaN” J. F. Kaeding, H. Asamizu, H. Sato, M. Iza, T. E. Mates, S. P. DenBaars, J. S. Speck, and S. Nakamura |
|
Applied Physics Letters 89 020104 |
|
Journal |
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302. |
|
2006 |
|
“Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura |
|
Journal of crystal Growth, 297, 321-325 |
|
Journal |
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303. |
|
2006 |
|
“Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (112)-plane GaN” H. Masui, T. Baker, M. Iza, H. Zhong, S. Nakamura, and S. DenBaars |
|
Journal of Applied Physics, 100, 113109 |
|
Journal |
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|
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304. |
|
2006 |
|
“Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates” C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. Paskov, B. Monemar, U. Behn, B. Haskell, P. Fini, and S. Nakamura |
|
Journal of Applied Physics, 100, 103511 |
|
Journal |
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305. |
|
2006 |
|
“Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths” Y.S. Choi, C. Meier, R. Sharma, K. Hennessy, E. Haberer, S. Nakamura, and E. Hu |
|
Materials Research Society Symposium Proceedings, Vol 892, 0892-FF20-06.1 |
|
Journal |
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306. |
|
2007 |
|
“Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers” V. Darakchieva T. Paskova, M. Schubert, P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. Haskell, P.T. Fini, J. Speck and S. Nakamura |
|
Journal of Crystal Growth, 300, 233-238 |
|
Journal |
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307. |
|
2007 |
|
“Seeded Growth of GaN by the Basic Ammonothermal Method” T. Hashimoto, M. Saito, K. Fujito, F. Wu, J. Speck, S. Nakamura |
|
Journal of Crystal Growth, 305, 311-316 |
|
Journal |
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|
|
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|
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308. |
|
2007 |
|
“Gallium-Nitride-Based Microcavity Light-Emitting Diodes with Air-Gap Distributed Bragg Reflectors” R. Sharma, Y.S. Choi, C.F. Wang, A. David, C. Weisbuch, S. Nakamura, E. Hu |
|
Applied Physics Letters, 91, 211108 |
|
Journal |
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|
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|
309. |
|
2007 |
|
“Impacts of Dislocation Bending and Impurity Incorporation on the Local Cathodoluminescence Spectra of GaN Grown by Ammonothermal Method” S. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. Speck, S. Nakamura |
|
Applied Physics Letters, 91, 251911 |
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Journal |
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|
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|
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310. |
|
2007 |
|
“Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy” T. Koyama, M. Sugawara, T. Hoshi, A. Uedono J. Kaeding, R. Sharma, S. Nakamura, S. Chichibu |
|
Applied Physics Letters, 90, 241914 |
|
Journal |
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|
|
|
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|
|
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|
|
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311. |
|
2007 |
|
“Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness” P. Morgan Pattison, A. David, R. Sharma, C. Weisbuch, S. DenBaars, and S. Nakamura |
|
Applied Physics Letters, 90, 031111 |
|
Journal |
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312. |
|
2007 |
|
“Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy” U. Behn, P. Misra, H. Grahn, B. Imer, S. Nakamura, S. DenBaars, J. Speck |
|
Phys. Stat. Sol A, 204, No 1, 299-303 |
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Journal |
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|
|
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|
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313. |
|
2007 |
|
“Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films” A. Chakraborty, B. Haskell, F. Wu, S. Keller, S. DenBaars, S. Nakamura, J. Speck, and U. Mishra |
|
Japanese Journal of Applied Physics, Vol 46 No 2, 542-546 |
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Journal |
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314. |
|
2007 |
|
“High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates” A. Tyagi, H. Zhong, N. Fellows, M. Iza, J. Speck, S. DenBaars, and S. Nakamura |
|
Japanese Journal of Applied Physics, Vol 46 No 7, L129-L131 |
|
Journal |
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315. |
|
2007 |
|
“High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes” M. Schmidt, K.C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. Speck |
|
Japanese Journal of Applied Physics, Vol 46 No 7, L126-L128 |
|
Journal |
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316. |
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2007 |
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“Room Temperature Continuous-Wave Lasing in GaN/InGaN Microdisks” A. Tamboli, E. haberer, R. Sharma, K. Lee, S. Nakamura, E. Hu |
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Nature Photonics, Vol 1, 61-64 |
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Journal |
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317. |
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2007 |
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“Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, E. Letts, S. DenBaars, J. Speck, S. Nakamura, and S. Newman |
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Applied Physics Letters, 90, 122116 |
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Journal |
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318. |
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2007 |
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“Defect-mediated surface morphology of nonpolar m-plane GaN” A. Hirai, B. A. Haskell, M. B. McLaurin, F. Wu, M. C. Schmidt, K. C. Kim, T. J. Baker, S. P. DenBaars, S. Nakamura, and J. S. Speck |
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Applied Physics Letters, 90, 121119 |
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Journal |
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319. |
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2007 |
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“Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes” M. Schmidt, K.C. Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46, No 9, L190-L191 |
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Journal |
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320. |
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2007 |
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“AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes” D. Feezell, M. Schmidt, R. Farrell, K.C. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46 No 13, L284-L286 |
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Journal |
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321. |
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2007 |
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“Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers” D. F. Feezell, R. M. Farrell, M. C. Schmidt, H. Yamada, M. Ishida, S. P. DenBaars, D. A. Cohen, and S. Nakamura |
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Applied Physics Letters, 90, 181128 |
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Journal |
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322. |
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2007 |
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“Anisotropic Strain and Phonon deformation Potentials in GaN” V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, J. Speck, P. Fini, S. Nakamura |
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Physical Review B, 75, 195217 |
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Journal |
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323. |
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2007 |
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“Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs” K.C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows , M. Saito, K. Fujito, J. Speck, S. Nakamura, S. DenBaars |
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Phys Stat Sol (RRL)1, No 3, 125-127 |
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Journal |
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324. |
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2007 |
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“Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates” A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46, No 19, L444-L445 |
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Journal |
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325. |
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2007 |
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“High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, F. Wu, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura |
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Applied Physics Letters, 90, 233504 |
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Journal |
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326. |
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2007 |
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“Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient” T. Hashimoto, F. Wu, J. Speck, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46, No 22, L525-L527 |
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Journal |
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327. |
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2007 |
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“Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura |
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IEEE Electronics Letters, Vol 43, No 15, 825-826 |
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Journal |
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328. |
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2007 |
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“High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate” H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. Chung, M. Saito, K. Fujito, S. DenBaars, S. Nakamura |
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Phys Stat Sol (RRL) 1, No 4, 162-164 |
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Journal |
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329.
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2007 |
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“Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, T. Koyama, A. Chakraborty, M. McLaurin, B. Haskell, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, T. Sota, S. Chichibu |
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Journal of Vacuum Science and Technology B, Vol 25, No 4, 1524-1528 |
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Journal |
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330. |
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2007 |
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“Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents” H. Masui, H. Sato, H. Asamizu, M. Schmidt, N. Fellows, S. Nakamura, and S. DenBaars |
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Japanese Journal of Applied Physics Vol 46, No 25, L627-L629 |
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Journal |
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331. |
|
2007 |
|
“Direct Evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes” H. Masui, N. Fellows, H.Sato, S. Nakamura, S. DenBaars |
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Applied Optics Vol 46, No 23, 5974-5978 |
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Journal |
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332. |
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2007 |
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“Progress in the growth of nonpolar gallium nitride” B. A. Haskell, S. Nakamura , S. P. DenBaars , J. S. Speck |
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Phys Stat Sol B 244, No 8, 2847-2858 |
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Journal |
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333. |
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2007 |
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“A GaN bulk crystal with improved structural quality grown by the ammonothermal method” T. Hashimoto, F. Wu, J. Speck, S, Nakamura |
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Nature Materials Vol 6, 568-571 |
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Journal |
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334. |
|
2007 |
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“Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes” R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46, No 32, L761-L763 |
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Journal |
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335. |
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2007 |
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“Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques” S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, T. Sota |
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Philosophical Magazine, Vol 87, No 13, 2019-2039 |
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Journal |
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336. |
|
2007 |
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“Mega-Cone Blue LEDs Based on ZnO/GaN Direct Wafer Bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, S. DenBaars |
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Phys Stat Sol C, 4, No 7, 2756-2759 |
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Journal |
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337. |
|
2007 |
|
“Direct Water Photoelectrolysis with Patterned n-GaN” I. Waki, D. Cohen, R. Lal, U. Mishra, S. DenBaars, S. Nakmura |
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Applied Physics Letters, 91, 093519 |
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Journal |
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338. |
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2007 |
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“Photoelectrochemical Properties of Nonpolar and Semipolar GaN” K. Fujii, Y. Iwaki, H. Masui, T. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. Speck, S. DenBaars, S. Nakamura, and K. Ohkawa |
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Japanese Journal of Applied Physics, Vol 46, No 10, A 6573-6578 |
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Journal |
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339. |
|
2007 |
|
“Nonpolar gallium nitride laser diodes are the next new blue” D. Feezell, S. Nakamura, S. DenBaars, J. Speck |
|
Laser Focus World, October Issue 79-83 |
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Magazine |
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340. |
|
2007 |
|
“High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate” K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura |
|
Japanese Journal of Applied Physics, Vol 46, No 40, L960-L962 |
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Journal |
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341. |
|
2007 |
|
“Growth of Bulk GaN Crystals by the Basic Ammonothermal Method” T. Hashimoto, F.Wu, J. Speck, and S. Nakamura |
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Japanese Journal of Applied Physics, Vol 46, No 37, L889-L891 |
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Journal |
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342. |
|
2007 |
|
“Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition” K.C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. DenBaars, J. Speck and K. Fujito |
|
Applied Physics Letters, 91, 181120 |
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Journal |
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343. |
|
2007 |
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“Formation and reduction of pyramidal hillocks on m-plane {1100} GaN” A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito |
|
Applied Physics Letters, 91, 191906 |
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Journal |
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344. |
|
2007 |
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“Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature” H. Masui, M. Schmidt, K. C. Kim, A. Chakraborty, S. Nakamura, and S. DenBaars |
|
Japanese Journal of Applied Physics, Vol 46, No 11, 7309-7310 |
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Journal |
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345. |
|
2007 |
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“Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes” H. Yamada, K. Iso, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura |
|
Japanese Journal of Applied Physics, Vol 46, No 46, L 1117-L1119 |
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Journal |
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346. |
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2007 |
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“Impact of strain on free-exciton resonance energies in wurtzite AlN” H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, T. Hoshi, P. Cantu, R. Sharma, J. Kaeding, S. Keller, U. Mishra, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, J. Speck, S. DenBaars, S. Nakamura, T. Koyama, T. Onuma, and S. Chichibu |
|
Journal Of Applied Physics, 102, 123707 |
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Journal |
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347. |
|
2007 |
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“Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes” H. Masui, S. Nakamura, S. DenBaars |
|
Applied Optics, Vol 47, No 1 88-92 |
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Journal |
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348. |
|
2007 |
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“Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes” D. Feezell, S. DenBaars, J. Speck, S. Nakamura |
|
Compound Semiconductor Integrated Circuit Symposium IEEE 1-4 |
|
Conference Proceeding |
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349. |
|
2007 |
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“Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)” B.Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars |
|
Journal of Materials Research, Vol 23, No 2, 551-555 |
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Journal |
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350. |
|
2007 |
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“Status and Perspectives of the Ammonothermal Growth of GaN Substrates” T. Hashimoto, F. Wu, M. Saito, K. Fujito, J.Speck, S. Nakamura |
|
Journal of Crystal Growth, 310, 876-880 |
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Journal |
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351. |
|
2007 |
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“Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells” Z. Chen, N. Fichtenbaum, D. Brown, S. Keller, U.K. Mishra, S.P. Denbaars, and S. Nakamura |
|
Journal of Electronic Materials, Vol 37, No 5, 546-549 |
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Journal |
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