Publications

No.	Year	Authors and Title	Publisher	Category
1.	1989	S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy”	J. Cryst. Growth, Vol. 97, pp. 303-309	Journal

2.	1990	S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes”	Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697	Journal

3.	1991	S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth”	Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023	Journal

4.	1991	S. Nakamura “Analysis of real-time monitoring using interference effects”	Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353	Journal

5.	1991	S. Nakamura “In situ monitoring of GaN growth using interference effects”	Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628	Journal

6.	1991	S. Nakamura “GaN growth using GaN buffer layer”	Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707	Journal

7.	1991	S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers”	Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711	Journal

8.	1991	S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 30 No. 12A, pp. L1998-L2001	Journal

9.	1992	S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 2B, pp. L139-L142	Journal

10.	1992	S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 5A, pp. 1258-1266	Journal

11.	1992	S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers”	J. Appl. Phys., Vol. 71, No. 11, pp. 5543-5549	Journal

12.	1992	S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers”	Jpn. J. Appl. Phys., Vol. 31 No. 9A, pp. 2883-2888	Journal

13.	1992	S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 10B, pp. L1457-L1459	Journal

14.	1993	S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 32 No. 1A/B. pp. L8-L11	Journal

15.	1993	S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 32 No. 1A/B, pp. L16-L19	Journal

16.	1993	S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 32 No. 3A, pp. L338-L341	Journal

17.	1993	S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes”	Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392	Journal

18.	1993	S. Nakamura “InGaN blue-light-emitting diodes”	Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915	Journal

19.	1993	S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films”	J. Appl. Phys., Vol. 74 No. 6, pp. 3911-3915	Journal

20.	1994	S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure”	No. 602, pp. 93-102

21.	1994	S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”	Appl. Phys. Lett., Vol. 64 No. 13, pp. 1687-1689	Journal

22	1994	S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display”	Nikkei Electronics Asia, June 1994	Magazine

23.	1994	S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes”	Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83	Conference Proceeding

24.	1994	S. Nakamura “Realized high bright blue laser-emitting diodes”	Scientific American, October 1994	Magazine

25.	1994	S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes”	Microelectronics Journal, Vol. 25, pp. 651-659	Journal

26.	1994	S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes”	J. Cryst. Growth, Vol. 145, pp. 911-917	Journal

27.	1994	S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs”	Mat. Res. Symp. Proc., Vol. 339, pp. 173-178	Journal

28.	1994	S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes”	J. Appl. Phys., Vol. 76, pp. 8189-8191	Journal

29.	1995	S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”	J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786	Journal

30.	1995	S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays”	IEEE, May 1995	Journal

31.	1995	S. Nakamura “InGaN/AlGaN blue-light-emitting diodes”	J. Vac. Sci. & Tech. A, Vol. 13 No. 3, pp. 705-710	Journal

32.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures”	Jpn. J. Appl. Phys., Vol. 34 No. 7A, pp. L797-L799	Journal

33.	1995	S. Nakamura “LED full color display”	IEICE, Vol. 78, No. 7, pp. 683-688	Journal

34.	1995	S. Nakamura “InGaN light-emitting diodes with quantum well structures”	Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP)	Conference Proceeding

35.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 34 No. 10B, pp. L1332-L1335	Journal

36.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’	Appl. Phys. Lett., Vol. 67 No. 13, pp. 1868-1870	Journal

37.	1995	S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED”	Optik, Vol. 24, No. 11, pp. 673-678	Journal

38.	1995	T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN”	J. Phys. Condens. Matter, Vol. 7 No. 10, pp. L129-L133	Journal

39.	1995	S. Nakamura “III-V Nitride light-emitting diodes”	OSA Proceedings on Advanced Solid-State Lasers, Vol. 24, pp. 20-24	Journal

40.	1995	W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes”	Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378	Journal

41.	1995	S. Nakamura “Recent developments of GaN based LEDs”	Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14	Conference Proceedings

42.	1996	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205	Conference Proceedings

43.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes”	Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76	Journal

44.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets”	Jpn. J. Appl. Phys., Vol. 35 No. 2B, pp. L217-L220	Journal

45.	1996	S. Nakamura “Pulsed operation of violet laser diodes”	Electr. Mater.,March issue, pp. 159-164	Journal

46.	1996	S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates”	Appl. Phys. Lett., Vol. 68 No. 15, pp. 2105-2107	Journal

47.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes”	Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271	Journal

48.	1996	S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers”	Appl. Phys. Lett., Vo. 68 No. 26, pp. 3766-3768	Journal

49.	1996	S. Nakamura “InGaN-based blue/green LEDs and laser diodes”	Adv. Mater., Vol. 8 No. 8, pp. 689-692	Journal

50.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K”	Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036	Journal

51.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes”	Appl. Phys. Lett., Vol. 69 No. 26, pp. 4056-4058	Journal

52.	1996	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures”	Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190	Journal

53.	1996	S. Nakamura “Present status and future prospects of GaN-based light emitting devices”	Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685	Journal

54.	1996	T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN”	Physica B, Vol. 219-220, pp. 493-495	Journal

55.	1996	S. Nakamura “Fabrication of blue and green nitride light-emitting diodes”	Inst. Phys. Conf. Ser. No. 142, Chapter 6	Conference Proceeding

56.	1996	S. Nakamura “III-V nitride-based light-emitting diodes”	Diamond and Related Materials, Vol. 5 Issue 1-3, pp. 496-500	Journal

57.	1996	Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer”	Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416	Journal

58.	1996	K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers”	Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789	Journal

59.	1996	W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes”	Mat. Res. Soc. Symp. Proc. 395, pp. 673-678	Conference Proceedings

60.	1996	S. Nakamura “InGaN light-emitting diodes with quantum-well structures”	Mat. Res. Soc. Symp. Proc. 395, pp. 879-887	Conference Proceedings

61.	1996	S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes”	Proceedings of SPIE, Vol. 2693, pp. 43-56	Conference Proceedings

62.	1996	T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374	Conference Proceedings

63.	1996	S. Nakamura “First successful III-V nitride based laser diodes”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124	Conference Proceedings

64.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes”	Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570	Journal

65.	1996	S. Nakamura “III-V nitride based blue/green LEDs and LDs”	23^rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18	Conference Proceedings

66.	1996	T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation”	23^rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544	Conference Proceedings

67.	1996	W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN-based single-quantum-well light-emitting diodes”	23^rd ICPS Proc.,Berlin, July 21-26, Vol. 4, pp. 2921-2924	Conference Proceedings

68.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Ridge-geometry InGaN multi-quantum-well-structure laser diodes”	Appl. Phys. Lett., Vol. 69 No. 10, pp. 1477-1479	Journal

69.	1996	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”	J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786	Journal

70.	1996	K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, S. Nakamura “Luminescence spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes”	MRS Internet Journal of Nitride Semiconductor Research, Vol. 1	Journal

71.	1997	A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A.Kuramata, K. Horino, S. Nakamura “Biaxial strain dependence of exciton resonance energies in wurzite GaN”	J. Appl. Phys., Vol. 81 No. 1, pp. 417-424	Journal

72.	1997	Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura “Recombination dynamics of localized excitons in In(sub 0.20)Ga(sub 0.80)N-In(sub 0.05)Ga(sub0.95)N multiple quantum wells”	Phys. Rev. B, Vol. 55 No. 4, pp. R1938-R1941	Journal

73.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure”	Appl. Phys. Lett., Vol. 70 No. 5, pp. 616-618	Journal

74.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime”	Appl. Phys. Lett., Vol. 70 No. 7, pp. 868-870	Journal

75.	1997	S. Nakamura “Blue-green light-emitting diodes and violet laser diodes”	MRS Bulletin, Vol. 22 No. 2, pp. 29-35	Journal

76.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diode with a lifetime of 27 hours”	Appl. Phys. Lett., Vol. 70 No. 11, pp.1417-1419	Journal

77.	1997	S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, S. Yoshida “Exciton spectra of cubic and hexagonal GaN epitaxial films”	Jpn. J. Appl. Phys., Vol 36 No. 3B, pp. 1976-1983	Journal

78.	1997	S. Nakamura “GaN-based blue/green semiconductor laser”	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 36 No. 3B, pp. 435-442	Journal

79.	1997	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Optical properties of InGaN”	Bulletin of Solid State Physics and Applications	Journal

80.	1997	Y. Kawakami, S. Saijyo, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN-single quantum well-based light emitting diodes”	Bulletin of Solid State Physics and Applications	Journal

81.	1997	S. Nakamura “Characteristics of RT-CW operated bluish-purple laser diodes”	Bulletin of Solid State Physics and Applications	Journal

82.	1997	Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, S. Nakamura “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420nm”	Appl. Phys. Lett., Vol. 70 No. 8, pp. 981-983	Journal

83.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Subband emission of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation”	Appl. Phys. Lett., Vol. 70 No. 20, pp. 2753-2755	Journal

84.	1997	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Luminescence from localized states in InGaN epilayers”	Appl. Phys. Lett., Vol. 70 No. 21, pp. 2822-2824	Journal

85.	1997	S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sota, S. Nakamura “Urbach-Matienssen tails in a wurzite GaN epilayer”	Appl. Phys. Lett., Vol. 70 No. 25, pp. 3440-3442	Journal

86.	1997	S. Nakamura “InGaN-based blue laser diodes”	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3 No. 3, pp. 712-718	Journal

87.	1997	S. Nakamura “Success story with blue LEDs”	Science Journal Kagaku, Vol. 67 No. 6, pp.438-450	Journal

89.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes”	Jpn. J. Appl. Phys., Vol. 36 No. 8B, pp. L1059-L1061	Journal

90.	1997	S. Chichibu, K. Wada, S. Nakamura “Spatially resolved cathodoluminescence spectra of InGaN quantum wells”	Appl. Phys. Lett., Vol. 71 No. 16, pp. 2346-2348	Journal

91.	1997	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices”	Jpn. J. Appl. Phys., Vol. 36 No. 12A, pp. L1568-L1571	Journal

92.	1997	S. Nakamura “InGaN quantum-well structure blue LEDs and LDs”	Journal of Luminescence, Vol. 72-74, pp. 55-58	Journal

93.	1997	S. Nakamura “Present and future aspects of blue light emitting devices”	Applied Surface Science, Vol. 113-114, pp. 689-697	Journal

94.	1997	S. Nakamura “First III-V-nitride-based violet laser diodes”	J. Cryst. Growth, Vol. 170 Issue 1-4, pp. 11-15	Journal

95.	1997	S. Nakamura “First laser-diodes fabricated from III-V nitride based materials”	Mater. Sci. & Engin. B, Vol. 43 Issue 1-3, pp. 258-264	Journal

96.	1997	S. Nakamura “III-V nitride based light-emitting devices”	Solid State Communications, Vol. 102 No. 2-3, pp. 237-248	Journal

97.	1997	S. Nakamura “RT-CW operation of InGaN multi-quantum-well structure laser diodes”	Mater. Sci. & Engin. B, Vol. 50 Issue 1-3, pp. 277-284	Journal

98.	1997	S. Nakamura “Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes”	Semiconductors & Semimetals, Vol. 48, pp. 391-443	Journal

99.	1997	G. Mohs, T. Aoki, M. Nagai, R. Shimano, M. Kuwata-Gonokami, S. Nakamura “Failure of the modal gain model in a GaN based laser diode”	Solid State Communications, Vol. 104 No. 11, pp. 643-648	Journal

100.	1997	S. Nakamura “Lessons from research of blue LEDs”	J. Phys. Soc. Jpn., Vol. 52 No. 12, pp.924-925	Journal

101.	1997	S. Nakamura “Room-temperature CW operation of GaN based laser diodes”	The Review of Laser Engineering, Vol. 25 No. 7, pp. 498-503	Journal

102.	1997	S. Nakamura “How I was led to the discovery of the InGaN-based blue/green LEDs”	Semiconductor News, July-December 1997, pp. 87-92	Magazine

103.	1997	F. A. Ponce, D. Cherns, W. T. Young, J. W. Steeds, S. Nakamura “Observation of nanopipes and inversion domains in high quality GaN epitaxial layers”	Mat. Res. Soc. Proc., 449, pp. 405-410	Conference Proceedings

104.	1997	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Recombination of localized excitons in InGaN single and multi-quantum well structures”	Mat. Res. Soc. Proc., 449, pp. 653-658	Conference Proceedings

105.	1997	Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of the InGaN MQW grown by MOCVD”	Mat. Res. Soc. Proc., 449, pp. 665-670	Conference Proceedings

106.	1997	W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of GaN-based single quantum well LEDs”	Mat. Res. Soc. Symp. Proc., 449, pp. 757-767	Conference Proceedings

107.	1997	S. Nakamura “Characteristics of InGaN multi-quantum-well structure laser diodes”	Mat. Res. Soc. Symp. Proc., 449, pp. 1135-1142	Conference Proceedings

108.	1997	S. Nakamura “Characteristics of RT-CW operated InGaN multi-quantum-well-structure laser diodes”	MRS Internet J. Nitride Semicond. Res. 2, 5	Journal

109.	1997	M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Brillouin scattering study of gallium nitride: elastic stiffness constants”	Journal of Physics: Condensed Matter, Vol. 9 No. 1, pp. 241-248	Journal

110.	1997	S. Nakamura “Present performance of InGaN based blue/green/yellow LEDs”	Proceedings of SPIE, Vol. 3002, pp. 26-35	Conference Proceedings

111.	1997	T. Deguchi, A. Shikanai, T. Sota, S. Chichibu, N. Sarukura, H. Ohtaka, T. Yamanaka, S. Nakamura “Nanosecond pump-and-probe study of wurtzite GaN”	Materials Science and Engineering, B50, pp. 180-182	Journal

112.	1997	T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, S. Nakamura “Gain spectra in cw InGaN/GaN MQW laser diodes”	Materials Science and Engineering, B50, pp. 251-255	Journal

113.	1997	Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijo, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of localized excitons in self-formed InGaN quantum dots”	Materials Science and Engineering B, Vol. 50 Issue 1-3, pp. 256-263	Journal

114.	1997	V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, K. G. Zolina, S. Nakamura “Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes”	J. Eur. Ceram. Soc., Vol. 17 No. 15/16, pp. 2033-2037	Journal

115.	1997	D. Cherns, W. T. Young, M. A. Saunders, F. A. Ponce, S. Nakamura “The analysis of nanopipes and inversion domains in GaN thin films”	Inst. Phys. Conf. Ser., No. 157, pp. 187-190	Conference Proceedings

116.	1997	S. Nakamura “Present status and future of blue LEDs and LDs”	Rev. Laser Engin., Vol. 25 No. 12, pp. 850-854	Journal

117.	1997	D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce, S. Nakamura “Observation of coreless dislocations in alpha-GaN”	Journal Crystal Growth, Vol. 178 No. 1-2, pp. 201-206	Journal
118.		S. Nakamura, G. Fasol The Blue Laser Diode (The Complete Story)	Springer-Verlag: Heidelberg	Book

119.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamado, T. Matsushita, H. Kiyoku, V. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate”	Appl. Phys. Lett., Vol. 72 No. 2, pp. 211-213	Journal

120.	1998	S. Nakamura “Applications of LEDs and LDs”	Semiconductors & Semimetals, Vol. 50, pp. 431-457	Journal

121.	1998	S. Nakamura “Progress with GaN-based blue/green LEDs and bluish-purple semiconductor LDs”	Electronics and Communications in Japan, Vol. 81 No. 5, pp. 1-8	Journal

122.	1998	A. Alemu, B. Gil, M. Julier, S. Nakamura “Optical properties of wurzite GaN epilayers growns on A-plane sapphire”	Phys. Rev. B, Vol. 57 No.7, pp. 3761-3764	Journal

123.	1998	S. Nakamura “Light emission moves into blue”	Physics World, February 1998	Magazine

124.	1998	M. Julier, J. Campo, B. Gil, J.P. Lascaray, S. Nakamura “Determination of the spin-exchange interaction constant in wurzite GaN”	Phys. Rev. B, Vol. 57 No. 12, pp. R6791-R6794	Journal

125.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates”	Jpn. J. Appl. Phys., Vol. 37 No. 3B, pp. L309-L312	Journal

126.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kazaki, H. Umemoto, M. Sano, K. Chocho “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates”	Appl. Phys. Lett., Vol. 72 No. 16, pp. 2014-2016	Journal

127.	1998	S. Nakamura “InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained layer superlattices”	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4 No. 3, pp. 483-489	Journal

128.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420mW”	Jpn. J. Appl. Phys., Vol. 37 No. 6A, pp. L627-L629	Journal

129.	1998	T. Mukai, K. Takekawa, S. Nakamura “InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates”	Jpn. J. Appl. Phys., Vol. 37 No. 7B, pp. L839-L841	Journal

130.	1998	S. Chichibu, T. Sota, K. Wada, S. Nakamura “Exciton localization in InGaN quantum well devices”	J. Vac. Sci. Technol. B, Vol. 16 No. 4, pp. 2204-2214	Journal

131.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates”	Appl. Phys. Lett., Vol. 73 No. 6, pp. 832-834	Journal

132.	1998	S. Nakamura “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes”	Science, Vol. 281 No. 5379, pp. 956-961	Journal

133.	1998	T. Mukai, M. Yamada, S. Nakamura “Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 37, pp. L1358-L1361	Journal

134.	1998	S. Nakamura “Materials issues for InGaN-based lasers”	J. Elect. Mater., Vol. 27 No. 4, pp. 160-165	Journal

135.	1998	S. Nakamura “Cathodoluminescence study on quantum microstructures”	Jpn. Soc. Appl. Phys., Vol. 67 No. 7, pp. 798-801	Journal

136.	1998	T. Mukai, D. Morita, S. Nakamura “High-power UV InGaN/AlGaN double-heterostructure LEDs”	J. Cryst. Growth, Vol. 189/190, pp. 778-781	Journal

137.	1998	G. Mohs, T. Aoki, R. Shimano, M. Kuwata-Gonokami, S. Nakamura “On the grain mechanism in GaN based laser diodes”	Solid State Communications, Vol. 108 No. 2, pp. 105-110	Journal

138.	1998	S. Nakamura “InGaN-based laser diodes”	Annu. Rev. Mater. Sci., Vol. 28, pp. 125-152	Journal

139.	1998	A. Alemu, M. Julier, J. Campo, B. Gil, D. Scalbert, J.-P. Lascaray “Optical anisotropy in GaN grown onto A-plane sapphire”	E-MRS ’98 Spring Meeting, Strasbourg, France	Conference proceeding

140.	1998	T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura “Luminescence spectra from InGaN multiquantum wells heavily doped with Si”	Appl. Phys. Lett., Vol. 72 No. 25, pp. 3329-3331	Journal

141.	1998	K. Ando, T. Yamaguchi, K. Koizumi, Y. Okuno, T. Abe, H. Kasada, A. Ishibashi, K. Nakano, S. Nakamura “Deep defect center characteristics of wide-bandgap II-IV and III-V blue laser materials”	Proceedings of SPIE (1998, Jan. 26-29), San Jose, California	Conference proceeding

142.	1998	S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours”	MRS Bulletin, Vol. 23 No. 5, pp. 37-43	Journal

143.	1998	S. Nakamura, K. Kitamura, H. Umeya, H. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi “Bright electroluminescence from CdS quantum dot LED structures”	Electronics Letters, Vol. 34 No. 25, pp. 2435-2436	Journal

144.	1998	E.R. Glaser, T.A. Kennedy, W.E. Carlos, P.P. Ruden, S. Nakamura “Recombination processes in In/sub x/Ga/sub 1-x/N light-emitting diodes studied through optically detected magnetic resonance”	Appl. Phys. Lett., Vol. 73 No. 21, pp. 3123-3125	Journal

145.	1998	S. Nakamura, Y. Ueno, K. Tajima “Ultrafast (200-fs switching, 1.5-Tb/s demultiplexing) and high-repetition (10 GHz) operations of a polarization-discriminating symmetric Mach-Zehnder all-optical switch”	IEEE Photonics Technology Letters,Vol. 10 No. 11, pp. 1572-1574	Journal
146.
	1998	Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced activation of hydrogen-passivated magnesium in p-type GaN films”	Jpn. J. Appl. Phys., Vol. 37 No. 8B, pp. L970-L971	Journal
147.
	1998	Y. Kawakami, Y. Narukawa, K. Sawada, S. Nakamura “The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells”	Electronics and Communications in Japan, Vol. 81 No. 7, pp. 45-56	Journal

148.	1998	K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, T. Murashita “Cathodoluminescence study of quantum microstructures”	Oyo Buturi, Vol. 67 No. 7, pp. 789-801	Journal

149.	1998	S. Nakamura “Commercial blue LDs a step closer for Nichia”	III-Vs Review, Vol. 11 No.2, pp. 28-32	Journal

150.	1998	T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura “Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes”	Semicond. Sci. and Technol., Vol. 13 No. 1, pp. 97-101	Journal

151.	1998	Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, S. Fujita, S. Fujita, S. Nakamura “The mechanism of radiative recombination in light emitting devices composed of InGaN quantum wells”	Transactions of the Institute of Electronics, Information and Communication Engineers C-II, Vol. J81C-II No. 1, pp. 78-88	Journal

152.	1998	T. Mukai, H. Narimatsu, S. Nakamura “Amber InGaN-based light-emitting diodes operable at high ambient temperatures”	Jpn. J. Appl. Phys., Vol. 37 No. 5A, pp. L479-L481	Journal

153.	1998	Z. L. Weber, S. Ruvimov, W. Swider, Y. Kim, J. Washburn, S. Nakamura, R. S. Kern, Y. Chen, J. W. Yang “Role of dopants and impurities on pinhole formation; defects formed at InGaN/GaN and AlGaN/GaN quantum wells”	Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 375-380	Journal

154.	1998	S. Chichibu, T. Deguchi, T. Sota, K. Wada, S. Nakamura “Localized excitons in InGaN”	Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 613-624	Conference Proceedings

155.	1998	S. Nakamura “InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours”	Mat. Res. Soc. Symp. Proc., Vol. 482, pp. 1145-1156	Conference Proceedings

156.	1998	Y. Narukawa, S. Saijyo, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Time-resolved electroluminescence spectroscopy of InGaN single quantum well LEDs”	J. Crystal Growth, Vol. 189/190, pp. 593-596	Journal

157.	1998	Y. Narukawa, K. Sawada, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura “Emission mechanism of localized excitons in InGaN single quantum wells”	J. Crystal Growth, Vol. 189/190, pp. 606-610	Journal

158.	1998	W. E. Carlos, S. Nakamura “Magnetic resonance studies of GaN-based LEDs”	J. Crystal Growth, Vol. 189/190, pp. 794-797	Journal

159.	1998	Y. Zohta, H. Kuroda, R. Nii, S. Nakamura “Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes”	J. Crystal Growth, Vol. 189/190, pp. 816-819	Journal

160.	1998	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho “Present status of InGaN/GaN/AlGaN-based laser diodes”	J. Crystal Growth, Vol. 189/190, pp. 820-825	Journal

161.	1998	S. Nakamura “High-power InGaN-based blue laser diodes with a long lifetime”	J. Crystal Growth, Vol. 195, pp. 242-247	Journal

162.	1998	S. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth”	Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462	Journal

163.	1998	S. Nakamura “Recent developments in InGaN-based LEDs and LDs”	Acta Physica Polonica A, Vol. 95, pp. 153-164	Journal

164.	1998	S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, I. Umemoto, M. Sano, K. Chocho “InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates with a fundamental transverse mode”	Jpn. J. Appl. Phys., Vol. 37 Part 2 No. 9A-B, L1020-L1022	Journal

165.	1998	S. Nakamura “Progress of GaN-based blue/green LEDs and bluish-purple semiconductor LDs”	Trans. Inst. Electron. Inf. Comm. Engin., Vol. J81C-II No. 1, pp. 89-96	Journal

166.	1998	D. Cherns, W. T. Young, M. Sanders, J. W. Steeds, F. A. Ponce, S. Nakamura “Determination of the atomic structure of inversion domain boundaries in alpha-GaN by transmission electron microscopy”	Philosophical Magazine A (Physics of Condensed Matter: Structure, Defects, and Mechanical Properties), Vol. 77 No. 1, pp. 273-286	Magazine

167.	1999	T. Mukai, M. Yamada, S. Nakamura “InGaN-based UV/blue/green/amber/red LEDs”	Light Emitting Diodes: Research, Manufacturing, and Applications III (SPIE), Vol. 3621	Journal

168.	1999	T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Infrared lattice absorption in wurtzite GaN”	Jpn. J. Appl. Phys., Vol. 38 No. 2B, pp. L151-L153	Journal

169.	1999	S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, T. Mukai “Violet InGaN/GaN/AlGaN-based laser diodes operable at 50˚ C with a fundamental transverse mode”	Jpn. J. Appl. Phys., Vol. 38 No. 3A, pp. L226-L229	Journal

170.	1999	S.F. Chichibu, H. Marchand, M.S. Minskey, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Feisher, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars, T. Deguchi, T. Sota, S. Nakamura “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth”	Appl. Phys. Lett., Vol. 74 No. 10, pp. 1460-1462	Journal

171.	1999	M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura “Brillouin scattering study of bulk GaN”	J. Appl. Phys., Vol. 85 No. 12, pp. 8502-8504	Journal

172.	1999	S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN’	J. Mater. Rsrch., Vol. 14 No. 7, pp. 2716-2731	Journal

173.	1999	K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Reflectance and emission spectra of excitonic polaritons in GaN”	Phys. Rev. B, Vol. 60 No. 7, pp. 4723-4730	Journal

174.	1999	T. Deguchi, K. Torii, K. Shimada, T. Sota, R. Matsuo, M. Sugiyami, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of InGaN active layer in ultraviolet light-emitting diode”	Jpn. J. Appl. Phys., Vol. 38 No. 9A/B, pp. L975-L977	Journal

175.	1999	J.T. Torvik, J.I. Pankove, S. Nakamura, I. Grzegory, S. Porowski “The effect of threading dislocations, Mg-doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors”	J. Appl. Phys., Vol. 86 No. 8, pp. 4588-4593	Journal

176.	1999	T. Mukai, S. Nakamura “Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown epitaxially laterally overgrown GaN substrates”	Jpn. J. Appl. Phys., Vol. 38 No. 10, pp. 5735-5739	Journal

177.	1999	S. Nakamura “InGaN-based blue light-emitting diodes and laser diodes”	J. Cryst. Growth, Vol. 201/202, pp. 290-295	Journal

178.	1999	S. Nakamura “Present status of InGaN-based laser diodes”	Phys. Stat. Sol. (a), Vol. 176 Issue 1, pp. 15-22	Journal

179.	1999	S. Nakamura “InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates”	Mater. Sci. & Engin. B, Vol. 59 Issue 1-3, pp. 370-375	Journal

180.	1999	Y. Kamiura, Y. Yamashita, S. Nakamura “Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride”	Physica B, Vol. 273/274, pp. 54-57	Journal

181.	1999	H. Asahi, K. Iwata, H. Tampo, T. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura, S. Gonda “Very strong photoluminescence emission from GaN grown on amorphous silica, substrate by gas source MBE”	J. Cryst. Growth, Vol. 201/202, pp. 371-375	Journal

182.	1999	S. Nakamura “Blue light emitting laser diodes”	Thin Solid Films, Vol. 343-344, pp. 345-349	Journal

183.	1999	S.F. Chichibu, A.C. Abare, M.P. Mack, M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Sota, S. Nakamura “Optical properties of InGaN quantum wells”	Mater. Sci. & Engin. B, Vol. 59 Issue 1-3, pp. 298-306	Journal

184.	1999	S. Nakamura “InGaN-based violet laser diodes”	Semicond, Sci. Technol., Vol. 14 No. 6, pp. R27-R40	Journal

185.	1999	S. Nakamura “Development of violet InGaN-based laser diodes”	Jpn. Soc. Appl. Phys., Vol. 68 No. 7, pp. 793-796	Journal

186.	1999	T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura “Structural and vibrational properties of GaN”	J. Appl. Phys., Vol. 86 No. 4, pp. 1860-1866	Journal

187.	1999	T.J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, H. Morkoc “Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN”	Appl. Phys. Lett., Vol. 74 No. 22, pp. 3353-3355	Journal

188.	1999	Y. Narukawa, Y. Kawakami, Sg. Fujita, S. Nakamura “Dimensionality of excitons in laser-diode structures composed of In(sub x)Ga(sub 1-x)N multiple quantum wells”	Phys. Rev. B, Vol. 59 No. 15, pp. 10283-10288	Journal

189.	1999	S. Nakamura “Development of violet InGaN-based laser diodes”	Oyo Buturi, Vol. 68 No. 7, pp. 793-796	Journal

190.	1999	T. Azuhata, K. Shimada, T. Deguchi, T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, S. Nakamura “Optical properties of an InGaN active layer in ultraviolet light emitting diode”	Jpn. J. Appl. Phys., Vol. 38 No. 9 A/B, pp. L975-L977	Journal

191.	1999	T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, S. Nakamura “Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure”	Jpn. J. Appl. Phys., Vol. 38 No. 8B, pp. L914-L916	Journal

192.	1999	T. Mukai, M. Yamada, S. Nakamura “Characteristic of InGaN-based UV/blue/green/amber/red light emitting diode”	Jpn. J. Appl. Phys., Vol. 38 No. 7A, pp. 3976-3981	Journal

193.	1999	T. Mukai, S. Nakamura “White and UV LEDs”	Oyo Buturi, Vol. 68 No. 2, pp. 152-155	Journal

194.	1999	Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, S. Nakamura “Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In/sub0.02/Ga/sub 0.98/N active layer”	Appl. Phys. Lett., Vol. 74 No. 4, pp. 558-560	Journal

195.	1999	S.F. Chichibu, K. Sota, K. Wada, S.P. DenBaars, S. Nakamura “Spectroscopic studies in InGaN quantum wells”	MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 2.7	Journal

196.	1999	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “InGaN/GaN/AlGaN-based LEDs and laser diodes”	MRS Internet Journal of Nitride Semiconductor Research, Vol. 4s1, 1.1	Journal

197.	1999	S.F. Chichibu, T. Deguchi, T. Sota, K. Wada, S.P. DenBaars, T. Mukai, S. Nakamura “Properties of quantum well excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, blue, green, amber light emitting diode structures”	Phys. Stat. Sol., Vol. 176 Issue 1, pp. 85-90	Journal

198.	1999	T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura “Two-phonon absorption spectra in wurzite GaN”	Applied Physics Letters, Vol. 75 No. 14, pp. 2076-2078	Journal

199.	1999	T. A. Kennedy, E. R. Glaser, W. E. Carlos, P. P. Ruden, S. Nakamura “Symmetry of electrons and holes in lightly photo-excited InGaN LEDs”	MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1, G7.4	Journal

200.	2000	S. Nakamura, F. Chichibu Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes	Taylor & Francis: London and New York	Book

201.	2000	S. Nakamura, S. Pearton, G. Fasol The Blue Laser Diode (The Complete Story) 2^nd Ed.	Springer-Verlag: Heidelberg	Book

202.	2000	S. Nakamura “InGaN-based laser diodes”	Japan Society of Applied Physics International, No. 1	Journal

203.	2000	S.F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi., H. Nakanishi, T. Azuhata, S. Nakamura “Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth”	Appl. Phys. Lett., Vol. 76 No. 12, pp. 1576-1578	Journal

204.	2000	S.F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K.H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes”	Appl. Phys. Lett., Vol. 76 No. 13, pp. 1671-1673	Journal

205.	2000	S.F. Chichibu, A. Shikanai, T. Deguchi, A. Setoguchi, R. Nakai, H. Nakanishi, K. Wada, S.P. DenBaars, T. Sota, S. Nakamura “Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells”	Jpn. J. Appl. Phys., Vol. 39 No. 4B, pp. 2417-2424	Journal

206.	2000	S. Nakamura “Role of alloy fluctuations in InGaN-based LEDs and laser diodes”	Mater. Sci. Forum, Vols. 338-342, pp. 1609-1614	Journal

207.	2000	S.F. Chichibu, A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, T. Sota, O. Brandt, K.H. Ploog, T. Mukai, S. Nakamura “Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction”	Phys. Stat. Sol. (a), Vol. 180, pp. 321-325	Journal

208.	2000	S.F. Chichibu, T. Azuhata, T. Sota, T. Mukai, S. Nakamura “Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes”	J. Appl. Phys., Vol. 88 No. 9, pp. 5153-5157	Journal

209.	2000	S. Nakamura “InGaN-based UV/blue/green LED and LD structure”	Handbook of Thin Film Devices, Vol. 2 Semiconductor Optical and Electro-Optical Devices, pp. 225-263	Journal

210.	2000	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai “Blue InGaN-based laser diodes with an emission wavelength of 450 nm”	Appl. Phys. Lett., Vol. 76 No. 1, pp. 22-24	Journal

211.	2000	T. Fujita, T. Hasegawa, M. Haraguchi, T. Okamoto, M. Fukui, S. Nakamura “Determination of second-order nonlinear optical susceptibility of GaN films on sapphire”	Jpn. J. Appl. Phys., Vol. 39 No. 5A, pp. 2610-2613	Journal

212.	2000	S. Nakamura “UV/blue/green InGaN-based LEDs and laser diodes grown on epitaxially laterally overgrown GaN”	IEICE Transactions on Electronics, Vol. E83-C No. 4, pp. 529-535	Journal

213.	2000	P. Fischer, J. Christen, S. Nakamura “Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting diode”	Jpn. J. Appl. Phys., Vol. 39 No. 2B, pp. L129-L132	Journal

214.	2000	A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu, S. Nakamura “A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure”	Appl. Phys. Lett., Vol. 76 No. 4, pp. 454-456	Journal

215.	2000	K. Torii, T. Koga, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “An attenuated-total-reflection study on the surface phonon polariton in GaN”	J. Phys. Condens. Matter, Vol. 12 No. 31, pp. 7041-7044	Journal

216.	2000	K. Torii, M. Ono, T. Sota, T. Azuhata, S.F. Chichibu, S. Nakamura “Raman scattering from phonon-polaritons in GaN”	Phys. Rev. B, Vol. 62 No. 16, pp. 10861-10866	Journal

217.	2000	T. Azuhata, M. Ono, K. Torii, T. Sota, S.F. Chichibu, S. Nakamura “Forward Raman scattering by quasilongitudinal optical phonons in GaN”	Journal of Applied Physics, Vol. 88 No. 9, pp. 5202-5205	Journal

218.	2000	M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto “Structural analysis of In/sub x/Ga/sub 1-x/N single quantum wells by coaxial-impact collision ion scattering”	Appl. Phys. Lett., Vol. 77 No. 16, pp. 2512-2514	Journal

219.	2000	T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, S. Nakamura “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution	J. Luminescence,Vol. 87-89, pp. 1196-1198	Journal

220.	2000	H. Kudo, H. Ishibashi, R. S. Zheng, Y. Yamada, T. Taguchi, S. Nakamura, G. Shinomiya “Ultraviolet emission properties in In_xGa_1-xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies”	J. Luminescence, Vol. 87-89, pp. 1199-1201	Journal

221.	2000	Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, S. Nakamura “Dimensionality of exitons in InGaN-based light emitting devices”	Phys. Stat. Sol. A, Vol. 178, No. 1, pp. 331-336

222.	2001	M. Yoshimoto, J. Saraie, S. Nakamura “Low-temperature microscopic photoluminescence images of epitaxially laterally overgrown GaN”	Jpn. J. Appl. Phys., Vol. 40 P. 2 No. 4B, pp. L386-L388	Journal

223.	2001	A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, S. Nakamura “Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergentic positron beams”	J. Appl. Phys., Vol. 90 No. 1, pp. 181-186	Journal

224.	2001	K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota, S. Nakamura “Excitonic polariton structures in wurtzite GaN”	Physica B, Vol. 302 No. 1, pp. 181-186	Journal

225.	2001	S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura “Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes”	Physica Status Solidi A, Vol. 183 No. 1, pp. 91-98	Journal

226.	2001	S. F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura “Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes”	Appl. Phys. Lett., Vol. 78 No. 5, p. 679	Journal

227.	2001	Y. Kawakami, Y. Narukawa, K. Omae, S. Nakamura, S. Fujita “Pump and probe spectroscopy of InGaN multi-quantum well bases laser diodes”	Materials Science and Engineering B, Vol. 82 No. 1-3, pp. 188-193	Journal

228.	2001	G. A. Sukach, P. S. Smertenko, P. F. Oleksenko, S. Nakamura “Analysis of the active region of overheating temperature in green LEDs based on group III nitrides”	Technical Physics, Vol. 46 No. 4, pp. 438-441	Journal

229.	2001	S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura “Band gap bowing and exciton localization in strained cubic In_xGa_1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy”	Applied Physics Letters, Vol. 79 No. 22, pp. 3600-3602	Journal

230.	2002	E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”	Mater. Sci. & Tech. B, 93, 39-48	Journal

231.	2002	S. F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S. P. DenBaars, S. Nakamura, H. Okumura “Recombination dynamics of localized excitons in cubic phase In_xGa_1‑xN/GaN multiple quantum wells on 3C-SiC/Si (001)”	Phys. Stat. Sol. B, 234 (3), 746-749	Journal

232.	2002	M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars “Higher efficiency InGaN laser diodes with an improved quantum well capping configuration”	Appl. Phys. Lett., 81 (22): 4275-4277	Journal

233.	2002	Piprek, J; Nakamura, S “Physics of high-power InGaN/GaN lasers”	IEEE Proc.- Optoelec., 149 (4): 145-151	Journal

234.	2003	S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura: “Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells”	J. Appl. Physics, 93 (4), 2051-2054	Journal
235.	2003	S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura “Recombination dynamics of localized excitons in cubic In_xG_1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate”	J. Vac. Sci. & Techno., 21 (4), 1856-1862	Journal

236.	2003	B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura “Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy”	Appl. Phys. Lett., 83 (8), 1554-1556	Journal

237.	2003	N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati “Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope”	J. Appl. Phys., 94 (7), 4315-4319	Journal

238.	2003	B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura “Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy”	Appl. Phys. Lett., 83 (4), 644-646	Journal

239.	2004	T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars “Radiative and nonradiative processes in strain free Al_xGa_1-xN films studied by time-resolved photoluminescence and positron annihilation techniques”	J. Appl. Phys., 95 (5), 2495-2504	Journal
240.	2004	T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”	Appl. Phys. Lett., 84 (6), 855-857	Journal
241.	2004	Y. Wu, A. Hanlon, J.F. Kaeding, R. Sharma, P.T. Fini, S. Nakamura, J.S. Speck “Effect of nitridation on polarity, microstructure, and morphology of A1N films”	Appl. Phys. Lett., 84 (6), 912-914	Journal
242.	2004	P.R. Tavernier, T. Margalith, J. Williams, D.S. Green, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura, D.R. Clarke “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”	J.of Cryst. Growth 264, 150-158	Journal
243.	2004	T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura “Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique”	Jpn. J. of Appl. Phys., 43(3B), L411-413	Journal
244.	2004	T. Koida, S.F. Chichibu, T. Sota, M.D. Craven, B.A. Haskell, J.S. Speck, S.P. DenBaars, S. Nakamura “Improved quantum efficiency in nonpolar (1120) A1GaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth”	Appl. Phys. Lett, 84 (19), 3768-3770	Journal
245.	2004	Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. DenBaars, S. Nakamura, E.L. Hu “Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N- Face GaN with Simple Photo-Enhanced Chemical Wet Etching”	Jpn. J. of Appl. Phys., 43 (5A), L637-639	Journal
246.	2004	M. McLaurin, B. Haskell, S. Nakamura, J.S. Speck “Gallium adsorption onto (1120) gallium nitride surfaces”	J. of Appl. Phys., 96 (1), 327-334	Journal
247.	2004	E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu “Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching”	Appl. Phys. Lett., 85 (5), 762-764	Journal
248.	2004	T. Koida, Y. Uchinuma, J. Kikuchi, K.R. Wang, M. Terazaki, T. Onuma, J.F. Kaeding, R. Sharma, S. Nakamura, S.F. Chichibu “Improved surface morphology in GaN homoepitaxy y NH₃-source molecular-beam epitaxy”	J. Vac. Sci. Tech. B, 22 (4), 2158-2164	Journal
249.	2005	J.F. Kaeding, Y. Wu, T. Fujii, R. Sharma, P.T. Fini, J.S. Speck, S. Nakamura “Growth and laser-assisted liftoff of low dislocation density A1N thin films for deep-UV light-emitting diodes”	J. of Crys. Growth, 272, 257-263	Journal
250.	2005	K. Fujito, T. Hashimoto, K. Samonji, J.S. Speck, S. Nakamura “Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates”	J. of Crystal Growth, 272, 370-376	Journal
251.	2005	E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu “Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching”	Appl. Phys. Lett., 85 (22), 5179-5181	Journal
252.	2005	A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak”	Appl. Phys. Lett, 85 (22), 5143-5145	Journal
253.	2005	A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra “Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN”	Appl. Phys. Lett., 86, 031901	Journal
254.	2005	B.A. Haskell, T.J. Baker, M.D. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura “Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy”	Appl. Phys. Lett., 86, 111917	Journal
255.	2005	B.A. Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura “ Microstructure and Enhanced Morphology of Planar Nonpolar m-Plane GaN Grown by Hydride Vapor Phase Epitaxy”	J. of Elec. Mater., 43 (4) 357-360	Journal
256.	2005	G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck, S. Keller, S. Nakamura, S.P. DenBaars “Intensity dependent time-resolved photoluminescence studies of GaN/A1GaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN”	Phys. Stat. Sol.A 202 (5), 846-849	Journal
257.	2005	T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra “Localized exciton dynamics in nonpolar (1120) In_xGa_1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”	Appl. Phys. Lett., 86, 151918	Journal
258.	2005	T. Hashimoto, K. Fujito, K. Samonji, J.S. Speck, S. Nakamura “Growth of AlN by the chemical vapor reaction process”	Jpn. J. of Appl. Phys., 44 (2), 869-873	Journal
259.	2005	A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates”	Jpn. J. of Appl. Phys., 44 (5), L173-L175	Journal
260.	2005	R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching”	Appl. Phys. Lett., 87, 051107	Journal
261.	2005	T. Hashimoto, K. Fujito, F. Wu, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura “Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia”	Jpn. J. of Appl. Phys., 44 (25), L797-L799	Journal
262.	2005	S. Ghosh, P. Misra, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”	J. of Appl. Phys., 98, 026105	Journal
263.	2005	A. Chakraborty, T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates”	Jpn. J. of Appl. Phys., 44 (30), L945-L947	Journal
264.	2005	T.J. Baker, B.A. Haskell, F. Wu, P.T. Fini, J.S. Speck, S. Nakamura “Characterization of planar semipolar gallium nitride films on spinel substrates”	Jpn. J. of Appl. Phys., 44 (29), L920-L922	Journal
265.	2005	A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction”	Appl. Phys. Lett., 87, 101107	Journal
266.	2005	H. Masui, A. Chakraborty, B.A. Haskell, U.K. Mishra, J.S. Speck, S. Nakamura, S.P. DenBaars “Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate”	Jpn. J. of Appl. Phys., 44 (43), L1329-L1332	Journal
267.	2005	R. Sharma, P.M. Pattison, H. Masui, R.M. Farrell, T.J. Baker, B.A. Haskell, F. Wu, S.P. DenBaars, J.S. Speck, S. Nakamura “Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode”	Appl. Phys. Lett., 87, 231110	Journal
268.	2005	Y.S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier “GaN blue photonic crystal membrane nanocavities”	Appl. Phys. Lett., 87, 243101	Journal
269.	2005	T. Hashimoto, K. Fujito, M. Saito, J.S. Speck, S. Nakamura “Ammonothermal growth of GaN on an over-1-inch seed crystal”	Jpn. J. of Appl. Phys. , 44 (52), L1570-L1572	Journal
270.	2006	C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu “Visible resonant modes in GaN-based photonic crystal membrane cavities”	Appl. Phys. Lett., 88, 031111	Journal
271.	2006	A. David, T. Fujii, E. Matioli, R. Sharma, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty “GaN light-emitting diodes with Archimedean lattice photonic crystals”	Appl. Phys. Lett., 88, 073510	Journal
272.	2006	A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S.P. DenBaars, E.L. Hu, C. Weisbuch, H. Benisty “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution”	Appl. Phys. Lett., 88, 061124	Journal
273.	2006	A. Chakraborty, B.A. Haskell, H. Masui, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra “Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation”	Jpn. J. of Appl. Phys., 45 (2A), 739-741	Journal
274.	2006	I. Waki, m. Iza, J.S. Speck, S.P. DenBaars, S. Nakamura “Etching of Ga-face and N-face GaN by inductively coupled plasma”	Jpn. J. of Appl. Phys., 45(2A), 720-723	Journal
275.	2006	J. Piprek, R. Farrell, S.P. DenBaars, S. Nakamura “Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers”	IEEE Photonics Technology Letters, 18 (1), 7-9	Journal
276.	2006	T.J. Baker, B.A. Haskell, F. Wu, J.S. Speck, S. Nakamura “Characterization of planar semipolar gallium nitride films on sapphire substrates”	Jpn. J. of Appl. Phys., 45 (6), L154-L157	Journal
277.	2006	T. Onuma, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu “Recombination dynamics of a 268 nm emission peak in Al_0.53In_0.11Ga_0.36N/Al_0.58In_0.02Ga_0.40N multiple quantum wells”	Appl. Phys. Lett., 88, 111912	Journal
278.	2006	A. David, T. Fujii, B. Moran, S. Nakamura, S.P. DenBaars, C. Weisbuch, H. Benisty “Photonic crystal laser lift-off GaN light-emitting diodes”	Appl. Phys. Lett., 88, 133514	Journal
279.	2006	P. Misra, U. Behn, O. Brandt, H.T. Grahn, B. Imer, S. Nakamura, S.P. DenBaars, J.S. Speck “Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy”	Appl .Phys. Lett., 88, 161920	Journal
280.	2006	Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S “Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm”	Phys. Stat. Sol. A 203 (7), 1783-1786	Journal
281.	2006	C. Roder, S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura “Strain in a-plane GaN layers grown on r-plane sapphire substrates”	Phys. Stat. Sol. A 203 (7): 1672-1675	Journal
282.	2006	T. Koyama, M. Sugawara, Y. Uchinuma, J.F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, S.F. Chichibu “Strain-relaxation in NH₃-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates”	Phys. Stat. Sol. A 203 (7), 1603-1606	Journal
283.	2006	T. Hashimoto, K. Fujito, R. Sharma, E.R. Letts, P.T. Fini, J.S. Speck, S. Nakamura “Phase selection of microcrystalline GaN synthesized in supercritical ammonia”	J. of Crystal Growth, 291, 100-106	Journal
284.	2006	F.S. Diana, A. David, I. Meinel, R. Sharma, C. Weisbuch, S. Nakamura, P.M. Petroff “Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure”	Nano Lett. 6 (6), 1116-1120	Journal

285.		2006	Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS “Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire”	Phys. Stat. Sol. B, 243 (7): 1441-1445	Journal
286.		2006	Kaeding JF, Iza M, Sato H, DenBaars SP, Speck JS, Nakamura S “Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition”	Jpn. J. Appl. Phys., 45 (21): L536–L538	Journal
287.		2006	Onuma T, Chakraborty A, Haskell A, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF “Exciton dynamics in nonpolar (1120) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth”	Phys. Stat. Sol. C, 3 (6) 2082–2086	Journal
288.		2006	Paskov PP, Schifano R, Malinauskas T, Paskova T, Bergman JP, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S “Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers”	Phys. Stat. Sol. C, 3 (6) 1499–1502	Journal

289*		2006	“Strain-induced polarization in wurtzite III-nitride semipolar layers” A. Romanov, T.Baker, S. Nakamura, J. Speck	Journal of Applied Physics 100 023522	Journal

290.		2006	“A semipolar (103) InGaN/GaN green light emitting diode” R. Sharma, P. M. Pattison, T. Baker, B. Haskell, R. Farrell, H. Masui, F. Wu, S. DenBaars, J. Speck, S. Nakamura	Materials Research Society Symposium Proceedings Vol 892 0892-FF0719-02.1-6	Journal

291.		2006	“Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light emitting diodes on (10) GaN templates” A. Chakraborty, T. Onuma, T. Baker, S. Keller, S. Chichibu, S. DenBaars, S. Nakamura, U. Mishra	Materials Research Society Symposium Proceedings, Vol 892 0892-FF07-09-EE05-09.1-6	Journal

292.		2006	“Optical properties of nonpolar a-plane GaN layers” P.P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura	Superlattices and Microstructures, 40 253-261	Journal

293.		2006	“First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes” H. Masui, T. Baker, R. Sharma, P. Pattison, M. Iza, H. Zhong, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics, Vol 45, No 34 L904-L906	Journal

294.		2006	“Effects of Phosphor Application Geometry on White Light-Emitting Diodes” H. Masui, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics, Vol 45, No 34, L910-L912	Journal

295.		2006	“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In_xGa_1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu	Applied Physics Letters 89 091906	Journal

296.		2006	“Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding” A. Murai, D. Thompson, C.Y. Chen, U. Mishra, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics, Vol 45, No 39, L1045-L1047	Journal

297.		2006	“Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, and S. DenBaars	Applied Physics Letters, 89, 171116	Journal

298.		2006	“Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature” H. Masui, M. Schmidt, A. Chakraborty, S. Nakamuraand S. DenBaars	Japanese Journal of Applied Physics, Vol 45, No 10A, 7661-7666	Journal

299.		2006	“Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors” S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakrabort, T. Koyama, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sota	Nature Materials, Vol 5, 810-816	Journal

300.		2006	“Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN” A. Chakraborty, K. C. Kim, F. Wu, B. Haskell, S. Keller, J. Speck, S. Nakamura, S. DenBaars and U. Mishra	Japanese Journal of Applied Physics, Vol 45, No 11, 8659-8661	Journal

301.		2006	“Realization of high hole concentrations in Mg doped semipolar (10) GaN” J. F. Kaeding, H. Asamizu, H. Sato, M. Iza, T. E. Mates, S. P. DenBaars, J. S. Speck, and S. Nakamura	Applied Physics Letters 89 020104	Journal

302.		2006	“Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura	Journal of crystal Growth, 297, 321-325	Journal

303.		2006	“Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (112)-plane GaN” H. Masui, T. Baker, M. Iza, H. Zhong, S. Nakamura, and S. DenBaars	Journal of Applied Physics, 100, 113109	Journal

304.		2006	“Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates” C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P. Paskov, B. Monemar, U. Behn, B. Haskell, P. Fini, and S. Nakamura	Journal of Applied Physics, 100, 103511	Journal

305.		2006	“Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths” Y.S. Choi, C. Meier, R. Sharma, K. Hennessy, E. Haberer, S. Nakamura, and E. Hu	Materials Research Society Symposium Proceedings, Vol 892, 0892-FF20-06.1	Journal

306.		2007	“Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers” V. Darakchieva T. Paskova, M. Schubert, P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. Haskell, P.T. Fini, J. Speck and S. Nakamura	Journal of Crystal Growth, 300, 233-238	Journal

307.		2007	“Seeded Growth of GaN by the Basic Ammonothermal Method” T. Hashimoto, M. Saito, K. Fujito, F. Wu, J. Speck, S. Nakamura	Journal of Crystal Growth, 305, 311-316	Journal

308.		2007	“Gallium-Nitride-Based Microcavity Light-Emitting Diodes with Air-Gap Distributed Bragg Reflectors” R. Sharma, Y.S. Choi, C.F. Wang, A. David, C. Weisbuch, S. Nakamura, E. Hu	Applied Physics Letters, 91, 211108	Journal

309.		2007	“Impacts of Dislocation Bending and Impurity Incorporation on the Local Cathodoluminescence Spectra of GaN Grown by Ammonothermal Method” S. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. Speck, S. Nakamura	Applied Physics Letters, 91, 251911	Journal

310.		2007	“Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy” T. Koyama, M. Sugawara, T. Hoshi, A. Uedono J. Kaeding, R. Sharma, S. Nakamura, S. Chichibu	Applied Physics Letters, 90, 241914	Journal

311.		2007	“Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness” P. Morgan Pattison, A. David, R. Sharma, C. Weisbuch, S. DenBaars, and S. Nakamura	Applied Physics Letters, 90, 031111	Journal

312.		2007	“Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy” U. Behn, P. Misra, H. Grahn, B. Imer, S. Nakamura, S. DenBaars, J. Speck	Phys. Stat. Sol A, 204, No 1, 299-303	Journal

313.		2007	“Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films” A. Chakraborty, B. Haskell, F. Wu, S. Keller, S. DenBaars, S. Nakamura, J. Speck, and U. Mishra	Japanese Journal of Applied Physics, Vol 46 No 2, 542-546	Journal

314.		2007	“High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates” A. Tyagi, H. Zhong, N. Fellows, M. Iza, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46 No 7, L129-L131	Journal

315.		2007	“High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes” M. Schmidt, K.C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. Speck	Japanese Journal of Applied Physics, Vol 46 No 7, L126-L128	Journal

316.		2007	“Room Temperature Continuous-Wave Lasing in GaN/InGaN Microdisks” A. Tamboli, E. haberer, R. Sharma, K. Lee, S. Nakamura, E. Hu	Nature Photonics, Vol 1, 61-64	Journal

317.		2007	“Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, E. Letts, S. DenBaars, J. Speck, S. Nakamura, and S. Newman	Applied Physics Letters, 90, 122116	Journal

318.		2007	“Defect-mediated surface morphology of nonpolar m-plane GaN” A. Hirai, B. A. Haskell, M. B. McLaurin, F. Wu, M. C. Schmidt, K. C. Kim, T. J. Baker, S. P. DenBaars, S. Nakamura, and J. S. Speck	Applied Physics Letters, 90, 121119	Journal

319.		2007	“Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes” M. Schmidt, K.C. Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 9, L190-L191	Journal

320.		2007	“AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes” D. Feezell, M. Schmidt, R. Farrell, K.C. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46 No 13, L284-L286	Journal

321.		2007	“Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers” D. F. Feezell, R. M. Farrell, M. C. Schmidt, H. Yamada, M. Ishida, S. P. DenBaars, D. A. Cohen, and S. Nakamura	Applied Physics Letters, 90, 181128	Journal

322.		2007	“Anisotropic Strain and Phonon deformation Potentials in GaN” V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, J. Speck, P. Fini, S. Nakamura	Physical Review B, 75, 195217	Journal

323.		2007	“Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs” K.C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows , M. Saito, K. Fujito, J. Speck, S. Nakamura, S. DenBaars	Phys Stat Sol (RRL)1, No 3, 125-127	Journal

324.		2007	“Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates” A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 19, L444-L445	Journal

325.		2007	“High power and high efficiency blue light emitting diode on freestanding semipolar (10) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, F. Wu, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 90, 233504	Journal

326.		2007	“Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient” T. Hashimoto, F. Wu, J. Speck, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 22, L525-L527	Journal

327.		2007	“Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	IEEE Electronics Letters, Vol 43, No 15, 825-826	Journal

328.		2007	“High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate” H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. Chung, M. Saito, K. Fujito, S. DenBaars, S. Nakamura	Phys Stat Sol (RRL) 1, No 4, 162-164	Journal

329.		2007	“Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, T. Koyama, A. Chakraborty, M. McLaurin, B. Haskell, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, T. Sota, S. Chichibu	Journal of Vacuum Science and Technology B, Vol 25, No 4, 1524-1528	Journal

330.		2007	“Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents” H. Masui, H. Sato, H. Asamizu, M. Schmidt, N. Fellows, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 46, No 25, L627-L629	Journal

331.		2007	“Direct Evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes” H. Masui, N. Fellows, H.Sato, S. Nakamura, S. DenBaars	Applied Optics Vol 46, No 23, 5974-5978	Journal

332.		2007	“Progress in the growth of nonpolar gallium nitride” B. A. Haskell, S. Nakamura , S. P. DenBaars , J. S. Speck	Phys Stat Sol B 244, No 8, 2847-2858	Journal

333.		2007	“A GaN bulk crystal with improved structural quality grown by the ammonothermal method” T. Hashimoto, F. Wu, J. Speck, S, Nakamura	Nature Materials Vol 6, 568-571	Journal

334.		2007	“Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes” R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 32, L761-L763	Journal

335.		2007	“Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques” S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, T. Sota	Philosophical Magazine, Vol 87, No 13, 2019-2039	Journal

336.		2007	“Mega-Cone Blue LEDs Based on ZnO/GaN Direct Wafer Bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, S. DenBaars	Phys Stat Sol C, 4, No 7, 2756-2759	Journal

337.		2007	“Direct Water Photoelectrolysis with Patterned n-GaN” I. Waki, D. Cohen, R. Lal, U. Mishra, S. DenBaars, S. Nakmura	Applied Physics Letters, 91, 093519	Journal

338.		2007	“Photoelectrochemical Properties of Nonpolar and Semipolar GaN” K. Fujii, Y. Iwaki, H. Masui, T. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. Speck, S. DenBaars, S. Nakamura, and K. Ohkawa	Japanese Journal of Applied Physics, Vol 46, No 10, A 6573-6578	Journal

339.		2007	“Nonpolar gallium nitride laser diodes are the next new blue” D. Feezell, S. Nakamura, S. DenBaars, J. Speck	Laser Focus World, October Issue 79-83	Magazine

340.		2007	“High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate” K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 40, L960-L962	Journal

341.		2007	“Growth of Bulk GaN Crystals by the Basic Ammonothermal Method” T. Hashimoto, F.Wu, J. Speck, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 37, L889-L891	Journal

342.		2007	“Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition” K.C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. DenBaars, J. Speck and K. Fujito	Applied Physics Letters, 91, 181120	Journal

343.		2007	“Formation and reduction of pyramidal hillocks on m-plane {1100} GaN” A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito	Applied Physics Letters, 91, 191906	Journal

344.		2007	“Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature” H. Masui, M. Schmidt, K. C. Kim, A. Chakraborty, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics, Vol 46, No 11, 7309-7310	Journal

345.		2007	“Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes” H. Yamada, K. Iso, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura	Japanese Journal of Applied Physics, Vol 46, No 46, L 1117-L1119	Journal

346.		2007	“Impact of strain on free-exciton resonance energies in wurtzite AlN” H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, T. Hoshi, P. Cantu, R. Sharma, J. Kaeding, S. Keller, U. Mishra, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, J. Speck, S. DenBaars, S. Nakamura, T. Koyama, T. Onuma, and S. Chichibu	Journal Of Applied Physics, 102, 123707	Journal

347.		2007	“Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes” H. Masui, S. Nakamura, S. DenBaars	Applied Optics, Vol 47, No 1 88-92	Journal

348.		2007	“Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes” D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Compound Semiconductor Integrated Circuit Symposium IEEE 1-4	Conference Proceeding

349.		2007	“Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)” B.Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars	Journal of Materials Research, Vol 23, No 2, 551-555	Journal

350.		2007	“Status and Perspectives of the Ammonothermal Growth of GaN Substrates” T. Hashimoto, F. Wu, M. Saito, K. Fujito, J.Speck, S. Nakamura	Journal of Crystal Growth, 310, 876-880	Journal

351.		2007	“Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells” Z. Chen, N. Fichtenbaum, D. Brown, S. Keller, U.K. Mishra, S.P. Denbaars, and S. Nakamura	Journal of Electronic Materials, Vol 37, No 5, 546-549	Journal

352.		2008	“Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy” S. Nakamura, J. S. Speck, and S. P. DenBaars et. al	Journal of Applied Physics, 103, 014305	Journal

353.		2008	“GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth” A. David, B. Moran, K. McGroddy, E. Matioli, E. Hu, S DenBaars, S. Nakamura, and C. Weisbuch	Applied Physics Letters, 92, 113514	Journal

354.		2008	“Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates” K. Fujito , J. Speck , S. DenBaars , S. Nakamura, et. al	Phys Stat Sol RRL 2 No 2 89-91	Journal

355.		2008	“Compositional Dependence of Nonpolar m-Plane InxGa1-xN/GaN Light Emitting Diodes” H. Yamada, K. Iso, M. Saito, H. Masui, K. Fujito, S. DenBaars, and S. Nakamura	Applied Physics Express 1 041101	Journal

356.		2008	“Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (1010) and (1011) planes” H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. DenBaars	Applied Physics Letters 92 091105	Journal

357.		2008	“High Power and High Efficiency Semipolar InGaN light Emitting Diodes” H. Sato, H. Hirasawa, H. Asamaizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Journal of Light and Vis. Env. Vol 32 No 2 107-110	Journal

358.		2008	“ZnO cone-shaped blue light emitting diodes” A. Murai, D. Thompson, U. Mishra, S. Nakamura, and S. DenBaars	Proceedings of SPIE Conferences and Symposiums Vol 6895 68950N-1-68950N-9	Conference Proceedings

359.		2008	“Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature” H. Masui, H. Kroemer, M. Schmidt, K.C. Kim, N. Fellows, S. Nakamura and S. DenBaars	Journal of Physics D: Applied Physics 41 082001	Journal

360.		2008	“InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates” A. Tyagi , H. Zhong , R. Chung , D. Feezell, M. Saito, K. Fujito, J. Speck , S. DenBaars , S. Nakamura	Phys Stat Sol C 5 No 6 2108-2110	Journal

361.		2008	“Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes” H. Masui, T. Ive, M. Schmidt, N. Fellows, H. Sato, H. Asamizu, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 47 No 4 2112-2118	Journal

362.		2008	“Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry” N. Fellows, H. Masui, H. Sato, H. Asamizu, M. Iza, H. Zhong, S. Nakamura, S. DenBaars	Phys Stat Sol C 5 No 6 2216-2218	Journal

363.		2008	“Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching” D. Thompson, A. Murai, M. Iza, S. Brinkley, S. DenBaars, U. Mishra, and S. Nakamura	Japanese Journal of Applied Physics Vol 47 No 5 3447-3449	Journal

364.		2008	“White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film” R. Barabash, G. Ice, B. Haskell, S. Nakamura , J. Speck , W. Liu	Phys Stat Sol B 245 No 5 899-902	Journal

365.		2008	“Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)]” H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, et al.	Journal of Applied Physics 103 089901	Journal

366.		2008	“Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope” H. Masui , H. Yamada, K. Iso, H. Hirasawa, N. Fellows, J. Speck, S. Nakamura, S. DenBaars	Phys Stat Sol A 205 No 5 1203-1206	Journal

367.		2008	“Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting” H.Masui, H. Yamada, K. Iso, J. Speck, S. Nakmura, S. DenBaars	Journal of the Society for Information Display Volume 16, Issue 4, pp. 571-578	Journal

368.		2008	“Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes” H. Masui, N. Fellows, S. Nakamura and S. DenBaars	Semiconductor Science and Technology 23 072001 1-4	Journal

369.		2008	“Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)” B. Imer , M. Schmidt , B. Haskell , S. Rajan , B. Zhong , K.C. Kim , F. Wu , T. Mates , S. Keller , U. Mishra , S. Nakamura , J. Speck , S. DenBaars	Phys Stat Sol A 205 No 7 1705-1712	Journal

370.		2008	“Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization” H. Masui, S. Nakamura and S. DenBaars	Semiocnductor Science and Technology 23 085018	Journal

371.		2008	“Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars	Journal of Material Research Vol 23 No 2 551-555	Journal

372.		2008	“Optical properties of yellow light-emitting diodes grown on semipolar (1122) bulk GaN substrates” H. Sato, R. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Applied Physics Letters 92 221110	Journal

373.		2008	“Ammonothermal Growth of Bulk GaN” T. Hashimoto, F. Wu, J. Speck, S. Nakamura	Journal of Crystal Growth 310 3907-3910	Journal

374.		2008	“Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes” H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura and S. DenBaars	Journal of Physics D: Applied Physics 41 165105	Journal

375.		2008	“Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes” K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu	Applied Physics Letters 93 103502	Journal

376.		2008	“Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures” A. Tyagi, Y.D. Lin, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Applied Physics Express 1 091103	Journal

377.		2008	“Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates” H. Asamizu, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Applied Physics Express 1 091102	Journal

378.		2008	“Dichromatic color tuning with InGaN-Based Light-Emitting Diodes” N. Fellows, H. Sato, Y.D. Lin, R. Chung, S. DenBaars, S. Nakamura	Applied Physics Letters 93 121112	Journal

379.		2008	“Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth” K.C. Kim, M. Schmidt, F. Wu, M. McLaurin, A. Hirai, S. Nakamura, S. DenBaars, and J. Speck	Applied Physics Letters 93 142108	Journal

380.		2008	“Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure” H. Masui, H. Yamada, K. Iso, S. Nakamura and S. DenBaars	Journal of Physics D: Applied Physics 41 225104	Journal

381.		2008	“Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding” A. Murai, D. Thompson, H. Hirasawa, N. Fellows, S. Brinkley, C.J. Won, M. Iza, U. Mishra, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 47 No 5 3522-3523	Journal

382.		2008	“Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition” N. Fellows, H. Sato, H. Masui, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 47 No 10 7854-7836	Journal

383.		2008	“Plane Dependent Growth of GaN in Supercritical Basic Ammonia” M. Saito, D. Kamber, T. Baker, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura	Applied Physics Express 1 121103	Journal

384.		2008	“Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes” H. Yamada, K. Iso, H. Masui, M. Saito, K. Fujito, S. DenBaars , S. Nakamura	Journal of Crystal Growth 310 4968-4971	Journal

385.		2008	“Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates” K. Vampola , N. Fellows , H.Masui , S. Brinkley , M. Furukawa , R. Chung , H. Sato , J. Sonoda , H. Hirasawa , M. Iza , S. DenBaars , S. Nakamura	Phys Stat Sol A 206 No 2 200-202	Journal

386.		2008	“High Quality AIN Grown on SiC by Metal Organic Chemical Vapor Deposition” Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. Mishra, S. DenBaars, S. Nakamura	Applied Physics Letters 93 191906	Journal

387.		2008	“Recent progress in nonpolar LEDs as polarized light emitters” H. Masui , M. Schmidt , N. Fellows , H. Yamada , K. Iso , J. Speck , S. Nakamura, S. DenBaars	Phys Stat Sol A 206 No 2 203-205	Journal

388.		2009	“Effect of Indium on the Physical Vapor Transport Growth of AIN” E. Letts, J. Speck, S. Nakamura	Journal of Crystal Growth 311 1060-1064	Journal

389.		2009	“The Dawn of Miniature Green Lasers” S. Nakamura, M. Riordan	Scientific American Vol. 300 No 4	Journal

390.		2009	“Current Status of GaN-Based Solid-State Lighting” S. Nakamura	MRS Bulletin Vol 34 101-107	Journal

391.		2009	“Evaluation of GaN substrates grown in supercritical basic ammonia” M. Saito, H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. Kamber, T., S. DenBaars, J. Speck, and S. Nakamura	Applied Physics Letters 94 052109	Journal

392.		2009	“Measurement of electron overflow in 450 nm InGaN light-emitting diode structures” K. Vampola, M. Iza, S. Keller, S. DenBaars, S. Nakamura	Applied Physics Letters 94 061116	Journal

393.		2009	“Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides” H. Asamizu, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Express 2 021002	Journal

394.		2009	“Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates” G. Garrett, H. Shen, M. Wraback, A. Tyagi, M. Schmidt, J. Speck, S. DenBaars, S. Nakamaura	Phys Stat Sol C 6 No S2 S800-S803	Journal

395.		2009	“Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation” A. Uedono, S. Ishibashi, S. Keller, C. Moe P. Cantu, T. M. Katona, D. S. Kamber, Y. Wu, E. Letts, S. Newman, S. Nakamura, J. Speck, U. Mishra, S. DenBaars, T. Onuma, S. Chichibu	Journal of Applied Physics 105 054501	Journal

396.		2009	“Enhancing the Light Extraction Efficiency of Blue Semipolar (10) Nitride-Based Light Emitting Diodes through Surface Patterning” H. Zhong, A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics 48 030201	Journal

397.		2009	“Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer” Z. Chen, Y. Pei, S. Newman, R. Chu, D. Brown, R. Chung, S. Keller, S. Denbaars, S. Nakamura, U. Mishra	Applied Physics Letters 94 113108	Journal

398.		2009	“Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy” S. Newman, D. Kamber, T. Baker, Y. Wu, F. Wu, Z. Chen, S. Nakamura, J. Speck, S. DenBaars	Applied Physics Letters 94 121906	Journal

399.		2009	“Prospects for LED Lighting” S. Pimputkar, J. Speck, S. DenBaars, S. Nakamura	Nature Photonics Vol.3 180-182	Journal

400.		2009	“Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures” H. Masui, S. Cruz, S. Nakamura, S. DenBaars	Journal of Electronic Materials Vol 38 No 6 756-760	Journal

401.		2009	“Photoelectrochemical etching of p-type GaN heterostructures” A. Tamboli, A. Hirai, S. Nakamura, S. DenBaars, E. Hu	Applied Physics Letters 94 15113	Journal

402.		2009	“Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect” Z. Chen, Y. Pei, S. Newman, D. Brown, R. Chung, S. Keller, S. P. Denbaars, S. Nakamura, U. Mishra	Appliec Physics Letters 94 171117	Journal

403.		2009	“Nonpolar and Semipolar Group III Nitride-Based Materials” J. Speck, S. Chichibu, et.al.	MRS Bulletin Vol 34 304-312	Journal

404.		2009	“Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes” D. Feexell, M. Schmidt, S. DenBaars, S. Nakamura	MRS Bulletin Vol 34 318-323	Journal

405.		2009	“Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 10) and semipolar (1 1 22) orientations” H. Masui, H. Asamizu, T. Melo, H. Yamada, K. Iso, S. Cruz, S. Nakamura, S. DanBaars	Journal of Physics D: Applied Physics 42 135106	Journal

406.		2009	“Determination of polarization field in a semipolar (112) InGa/GaN single quantum well using Franz–Keldysh oscillations in electroreflectance” H. Shen, M. Wraback, H. Zhong, A. Tyagi, S. P. DenBaars, S. Nakamura, and J. S. Speck	Applied Physics Letters 94 241906	Journal

407.		2009	“Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding” K. Kelchner, M. Hardy, R. Ferrell, D. Haeger, F. Wu et. al	Applied Physics Express 2 071003	Journal

408.		2009	“Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures” H. Masui, H. Asamizu, A.Tyagi, N. Fellows, S. Nakamura, S. DenBaars	Applied Physics Express 2 071002	Journal

409.		2009	“Characterization of blue-green m-plane InGaN light emitting diodes” Y.D.Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 94 261108	Journal

410.		2009	“Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition” H. Masui, S. Keller, N. Fellows, N. Fichtenbaum, M. Furukawa, S. Nakamura, U. Mishra, S. DenBaars	Japanese Journal of Applied Physics 48 071003	Journal

411.		2009	“Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well” H. Shen, M. Wraback, H. Zhong, A. Tyagi, S. P. DenBaars, S. Nakamura, J. S. Speck	Applied Physics Letters 95 033503	Journal

412.		2009	“Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate” Y.D. Lin, M. Hardy, K. Kelchner, D. Haeger et. al.	Applied Physics Express 2 082102	Journal

413.		2009	“m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers” Y-D. Lin, C. Y. Huang, M. Hardy, P. S. Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 95 081110	Journal

414.		2009	“Universality of bias- and temperature-induced dephasing in ballistic electronic interferometers” Y. Yamauchi, M. hashisaka, S. Nakamura, K. Chida, S. Kasai, T. Ono, R. Leturcq, K. Ensslin, D. Driscoll, A. Gossard, K. Kobyashi	Physical Review B 79 161306(R)	Journal

415.		2009	“Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization” H. Masui, J. Sonoda, A. Chakraborty, H. Yamada, K. Iso, N. Pfaff, I. Koslow, S. Nakamura, S. DenBaars	Japanese Journal of Applied Physics 48 098003	Journal

416.		2009	“Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films” H. Masui, T. Melo, J. Sonoda, C. Weisbuch, S. Nakamura, S. DenBaars	Journal of Electronical Materials Vol 39 No 1 15-19	Journal

417.		2009	“GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation” A. Sztein, H. Ohta, J. Sonoda, A Ramu, J. Bowers, S. DenBaars, S. Nakamura	Applied Physcis Letters 2 111003	Journal

418.		2009	“Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1−xSr2+xAlO5−xFx solid solutions for solid state white lighting” W.B. Im, Y. Fourr´e, S. Brinkley, J. Sonoda, S. Nakamura, S. DenBaars, R. Seshadri	Optics Express Vol 17 No 25 22673-22679	Journal

419.		2009	“Spontaneous formation of {101} InGaN quantum wells on a (112) GaN template and their electroluminescence characteristics” H. Masui , D. Kamber, M. Iza , J. Speck , S. Nakamura and S DenBaars, et. al	Semiconductor Science and Technology 25 015003	Journal

420.		2009	“m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching” M. Hardy, K. Kelchner, K. Fujito, J. Speck, S. Nakamura, S. DenBaars et. al	Applied Physics Express 2 121004	Journal

421.		2009	“Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112) GaN free standing substrates” A. Tyagi, F. Wu, E. Young, H. Ohta, S. DenBaars, et al	Applied Physics Letters 95 251905	Journal

422.		2009	“AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm” A. Tyagi, R. Ferrell, K. Kelchner, D. Haeger et. al	Applied Physics Express 3 011002	Journal

423.		2009	“Non-equilibrium dephasing in ballistic interferometers” Y. Yamauchi, M. Hashisaka, S. Nakamura, K. Chida, S. Kasai, T. Ono, R. Leturcq, D. Driscoll, A. Gossard, K. Kobayashi	Journal of Physics: Conference Series 193 012045	Journal

424.		2010	“State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes” J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y. C. Chang, D. Feezell, R. Craig, J. Speck, S. DenBaars, S. Nakamura	Proceedings of SPIE Conferences and Symposiums Vol 7686 76860L-1-76860L-10	Journal

425.		2010	“High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes” J. Raring, E. Hall, M. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y. C. Chang, D. Feezell, R. Craig, J. Speck, S. DenBaars, S. Nakamura	Proceedings of SPIE Conferences and Symposiums Vol 7602 760218-1-760818-10	Journal

426.		2010	“Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges” H. Masui, S. Nakamura, S. DenBaars, U. Mishra	IEEE Transactions on Electron Devices Vol 57 No 1 88-100	Journal

427.		2010	“Propagation of Spontaneous Emission in Birefringent m-Axis Oriented Semipolar (1122) (Al,In,Ga)N Waveguide Structures” C.Y. Huang, A. Tyagi, Y.D. Lin, M. Hardy, P.S. Hsu, K. Fujito, J.S. Ha, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Japanese Journal of Applied Physics 49 010207	Journal

428.		2010	“Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy” E. Young, F. Wu, A. Romanov, A. Tyagi, C. Gallinat, S. DenBaars, S. Nakamura, S. Speck	Applied Physics Express 3 011004	Journal

429.		2010	“Optical waveguide simulations for the optimization of InGaN-based green laser diodes” C. Y. Huang, Y. D. Lin, A Tyagi, A. Chakraborty, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Journal of Applied Physics 107 023101	Journal

430.		2010	“Nonequilibrium Fluctuation relations in a Quantum Coherent Conductor” S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobyashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A. Gossard	The American Physical Society: Physical Review Letters 104 080602	Journal

431.		2010	“Technique to evaluate the diode ideality factor of light-emitting diodes” H. Masui, S. Nakamura, S. DenBaars	Applied Physics Letters 96 073509	Journal

432.		2010	“Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (1011) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy” T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. Kaeding, M. Iza, S. DenBaars, S. Nakamura, S. Chichibu	Applied Physics Letters 96 091913	Journal

433.		2010	“InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates” P.S. Hsu, K. Kelchner, A. Tyagi, R. Ferrell, D. Haeger, K. Fujito, H. Ohta, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Express 3 052702	Journal

434.		2010	“Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R. Farrell, P. S. Hsu, D. Hager, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 96 231113	Journal

435.		2010	“Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates” R. Farrell, D. Haeger, X. Chen, C. Gallinat, R. Davis, M. Cornish, K. Fujito, S. Keller, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Express 96 231907	Journal

436.		2010	“Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN” F. Wu, y.D. Lin, A. Chakraborty, H. Otha, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 96 231912	Journal
437.		2010	“Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells” V. Liuolia, S. Marcinkevicius, Y. Lin, H. Ohta, S. DenBaars, S. Nakamura	Journal of Applied Physics 108, 023101	Journal

438.		2010	“Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes” C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. Ha, S. Nakamura, S. DenBaars	Japanese Journal of Applied Physics 49, 080210	Journal

439.		2010	“High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (30(3)over-bar(1)over-bar) Bulk GaN Substrate” I. Koslow, J. Sonoda, R. Chung, C. Pan, S. Brinkley, H. Ohta, S. Nakamura, S. DenBaars	Japanese Journal of Applied Physics 49, 080203	Journal

440.		2010	“High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes” Y. Lin, S. Yamamoto, C. Huang, C. Hsiung, F. Wu, K. Fujito, H. Ohta, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Express 3, 082001	Journal

441.		2010	“Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy” V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura	Applied Physics Letters 97, 151106	Journal

442.		2010	“Future of group-III nitride semiconductor green laser diodes [Invited]” H. Ohta, S. DenBaars, Shuji Nakamura	Journal of Optical Society of America-B, Optical Physics 27, Issue 11	Journal

443.		2010	“Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes” R. Farrell, D. Haeger, X. Chen, M. Iza, A. Hirai, K. Kelchner, K. Fujito, A. Chakraborty, S. Keller, S. DenBaars, J. Speck, S. Nakamura	Journal of Crystal Growth 313, 1-7	Journal

444.		2011	“Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy” B. Bryant, D. Kamber, F. Wu, S. Nakamura, J. S. Speck	Physica Status Solidi C 8, Issue 5	Journal

445.		2011	“Blue InGaN/GaN laser diodes grown on (3031) free-standing GaN substrates” P. S. Hsu, J. Sonoda, K. Kelchner, A. Tyagi, R. Farrell, D. Haeger, E. Young, A. Romanov, K. Fujito, H. Ohta, S. P. DenBaars, J. Speck, S. Nakamura	Physica Status Solidi C 8, Issue 7-8, 2390-2392	Journal

446.		2011	“Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes” M. T. Hardy, R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, D. A. Cohen, S. Nakamura, J. S. Speck, S. P. DenBaars	Physica Status Solidi C 8, Issue 7-8, 2226-2228	Journal

447.		2011	“Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes” S. Brinkley, Y. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. Speck, S. Nakamura, and S. DenBaars	Applied Physics Letters 98, Issue 1, 011110	Journal

448.		2011	“High internal and external quantum efficiency InGaN/GaN solar cells” E. Matioli, C. Neufeld, M. Iza, S. Cruz, A. Al-Heji, X. Chen, R. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch	Applied Physics Letters 98, Issue 2, 021102	Journal

449.		2011	“Misfit dislocation formation at heterointerfaces in (Al,In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates” F. Wu, A. Tyagi, E. Young, A. Romanov, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Journal of Applied Phyics 109, Issue 3	Journal

450.		2011	“Ohmic Cathode Electrode on the Backside of m-Plane and (20(2)over-bar1) Bulk GaN Substrates for Optical Device Applications” C. Hsiung, Y. Lin, H. Ohta, S. DenBaars, S. Nakamura	Japanese Journal of Applied Physics 50, Issue 3, 030208	Journal

451.		2011	“Droop improvement in high current range on PSS-LEDs” S. Tanaka, Y. Zhao, I. Koslow, C. Pan, H-T. Chen, J. Sonoda, S. DenBaars, S. Nakamura	Electronics Letters 47, Issue 5 pg. 335-U66	Journal

452.		2011	“Fluctuation theorem and microreversibility in a quantum coherent conductor” S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A. Gossard	Physical Review B 83, 155431	Journal

453.		2011	“Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates” S. Bae, D. Lee, B. Kong, H. Cho, J. Kaeding, S. Nakamura, S. DenBaars, J. Speck	Current Applied Physics 98, 954-958	Journal

454.		2011	“Atom probe analysis of interfacial abruptness and clustering within a single In(x)Ga(1-x)N quantum well device on semipolar, (10(11)(--)) GaN substrate” T. Prosa, P. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. DenBaars, S. Nakamura, and J. Speck	Applied Physics Letters 98, Issue 19 191903	Journal

455.		2011	“Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy” A. Romanov, E. Young, F. Wu, A. Tyagi, C. Gallinat, S. Nakamura, S. DenBaars, J. Speck	Journal of Applied Physics 109, Issue 10, 103522	Journal
456.		2011	“High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm” R. Farrell, C. Neufeld, S. Cruz, J. Lang, M. Iza, S. Keller, S. Nakamura, S. DenBaars, U. Mishra, and J. Speck	Applied Physics Letters 98, Issue 20, 201107	Journal

457.		2011	“Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition” R. Chung, F. Wu, Ravi Shivaraman, S. Keller, S. DenBaars, J. Speck, and S. Nakamura	Journal of Crystal Growth 324, Issue 1 Pg 163-167	Journal

458.		2011	“Erratum: Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1 x N quantum well device on semipolar (10 1¯1¯) GaN substrate” T. J. Prosa, P. H. Clinton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, J. S. Speck	Applied Physics Letters 98, 239901	Journal

459.		2011	“Effect of doping and polarization on carrier collection in InGaN quantum well solar cells” C. Neufeld, S. Cruz, R. Farrell, Michael Iza, J. Lang, S. Keller, S. Nakamura, S. DenBaars, J. Speck, U. Mishra	Applied Physics Letters 98, Issue 24, 243507	Journal

460.		2011	“Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals” E. Matioli, S. Brinkley, K. Kelchner, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch	Applied Physics Letters 98, Issue 25, 251112	Journal

461.		2011	“High-Power Blue-Violet Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm(2)” Y. Zhao, S. Tanaka, CC Pan, K. Fujito, D. Feezell, JS Speck, SP DenBaars, S. Nakamura	Applied Physics Express, 4, Issue 8, 082104	Journal

462.		2011	“High Optical polarization ratio from semipolar (20(2)over-bar(1)over-bar) blue-green InGaN/GaN light-emitting diodes” Y. Zhao, S. Tanaka, Q. Yan, C. Huang, R. Chung, C. Pan, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters 99, Issue 5, 051109	Journal

463.		2011	“Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells” CJ. Neufeld, SC. Cruz, RM Farrell, M. Iza, S. Keller, S. Nakamura, SP DenBaars, JS Speck, UK Mishra	Applied Physics Letters, 99, Issue 7, 071104	Journal

464.		2011	“Misfit dislocation formation via pre-existing threading dislocation glide in (11(2)over-bar2) semipolar heteroepitaxy” PS Hsu, EC Young, AE Romanov, K. Fujito, SP DenBaars, S. Nakamura, JS Speck	Applied Physics Letters, 99, Issue 8, 081912	Journal

465.		2011	“Group III-nitride lasers: a materials perspective” MT Hardy, DF Feezell, SP DenBaars, S. Nakamura	Materials Today, 14, Issue 9, 408-415	Journal

466.		2011	“AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p- Type AlGaN Etch Stop Layers” RM Farrell, DA Haeger, PS Hsu, MT Hardy, K. Kelchner, K. Fujito, D. Feezell, U. Mishra, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Express, 4, Issue 9, 092105	Journal

467.		2011	“Temperature Dependent Capacitance-Voltage Analysis of Uninentionally Doped and Si Doped AI0.82ln0.18N Grown on GaN” R. Chung, O. Bierwagen, F. Wu, S. Keller, S. DenBaars, J. Speck, S. Nakamura	Japanese Journal of Applied Physics, 50, Issue 10, 101001	Journal

468.		2011	“Influence of Mg-doped barriers on semipolar (20(2)over-bar1) multiple-quantum-well green light-emitting diodes” C. Huang, Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 99, Issue 14, 141114	Journal

469.		2011	“Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R. Farrell, D. Haeger, P. Hsu, K. Fujito, D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letters, 99, Issue 17, 171115	Journal

470.		2011	“High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes” R. Farrell, D. Haeger, P. Hsu, M. Schmidt, K. Fujito, D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letter, 99, Issue 17, 171113	Journal

471.		2011	“High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes” Y. Zhao, S. Tanaka, Q. Yan, C. Huang, R. Chung, C. Pan, K. Fujito, D. Feezell, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 99, Issue 22, 229902	Journal

472.		2011	“Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20(21)over-bar) InGaN/GaN quantum wells” C. Huang, M. Hardy, K. Fujito, D. Feezell, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 99, Issue 24, 241115	Journal

473.		2011	“Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting” S. Brinkley, N. Pfaff, K. Denault, Z. Zhang, H. Hintzen, R. Seshadri, S. Nakamura, and S. DenBaars	Applied Physics Letters, 99, Issue 24, 241106	Journal

474.		2011	“High temperature thermoelectric properties of optimized InGaN” A. Sztein, H. Ohta, J. Bowers, S. DenBaars, S. Nakamura	Journal of Applied Physics, 110, Issue 12, 123709	Journal

475.		2011	“Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures” F. Wu, E. Young, I. Koslow, M. Hardy, P. Hsu, A. Romanov, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters, 99, Issue 25, 251909	Journal

476.		2012	“Advances in GaN Semiconductors for Energy Efficient Solid State Lighting, SP DenBaars, CC Pan, N. Pfaff, S. Tanaka, JS Speck, S Nakamura	2012 IEEE Photonics Conference, 427-428	Refereed Proceeding

477.		2012	“Semipolar (20(2)over-bar(1)over-bar) Blue and Green InGaN Light-Emitting Diodes” YJ Zhao, CY Huang, S. Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, S. Nakamura	Conference on Lasers and Electro-Optics	Refereed Proceeding

478.		2012	“High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package” CC Pan, S. Nakamura, SP DenBaars	Conference on Lasers and Electro-Optics	Refereed Proceeding

479.		2012	“Semipolar (20(21)over-bar) Laser Diodes (lambda=505nm) with Wavelength-Stable InGaN/GaN Quantum Wells” CY Huang, Y. Zhao, MT Hardy, K. Fujito, DF Feezell, JS Speck, SP DenBaars, S. Nakamura	Conference on Lasers and Electro-Optics	Refereed Proceeding

480.		2012	“Demonstration of a Relaxed Waveguide Semipolar (20(2)over-bar1) InGaN/GaN Laser Diode” MT Hardy, PS Hsu, I Koslow, DF Feezell, S. Nakamura, JS Speck, SP DenBaars	Conference on Lasers and Electro-Optics	Refereed Proceeding

481.		2012	“384 nm AlGaN Diode Lasers on Relaxed Semipolar Buffers” DA Haeger, EC Young, RB Chung, F Wu, AE Romanov, S Nakamura, SP DenBaars, JS Speck, DA Cohen	Conference on Lasers and Electro-Optics	Refereed Proceeding

482.		2012	“Latest Performance of GaN-based Nonpolar.Semipolar Emitting Devices” S. Nakamura	IEEE International Semiconductor Laser Conference	Refereed Proceeding

483.		2012	“High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy” A. Reading, J. Richardson, C. Pan, S. Nakamura, and S. DenBaars	Optics Express, 20, Issue 1, A13-A19	Journal

484.		2012	“444.9 nm semipolar (11(2)over-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer” P. Hsu, M. Hardy, F. Wu, I. Koslow, E. Young, A. Romanov, K. Fujito, D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Applied Physics Letters, 100, Issue 2, 021104	Journal

485.		2012	“Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition” T. Henry, A. Armstrong, K. Kelchner, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters, 100, Issue 8 082103	Journal

486.		2012	“The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN” R. Chung, H. Chen, C. Pan, J. Ha, S. DenBaars, S. Nakamura	Applied Physics Letters, 100, Issue 9 091104	Journal

487.		2012	“Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes” S. Brinkley, C. Keraly, J. Sonoda, C. Weisbuch, J. Speck, S. Nakamura, S. DenBaars	Applied Physics Express, 5, Issue 3 032104	Journal

488.		2012	“Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells” Y. Hu, R. Farrell, C. Neufeld, M. Iza, S. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. DenBaars, U. Mishra, and J. Speck	Applied Physics Letters, 100, Issue 16 161101	Journal

489.		2012	“384 nm laser diode grown on a (20(2)over-bar1) semipolar relaxed AlGaN buffer layer” D. Haeger, E. Young, R. Chung, F. Wu, N. Pfaff, M. Tsai, K. Fujito, S. DenBaars, J. Speck, S. Nakamura, D. Cohen	Applied Physics Letters, 100, Issue 16 161107	Journal

490.		2012	“Double embedded photonic crystals for extraction of guided light in light-emitting diodes” J. Jewell, D. Simeonov, S. Huang, Y. Hu, S. Nakamura, J. Speck, C. Weisbuch	Applied Physics Letters, 100, Issue 17 171105	Journal

491.		2012	“Stress relaxation and critical thickness for misfit dislocation formation in (10(1)over-bar0) and (30(31)over-bar) InGaN/GaN heteroepitaxy” P. Hsu, M. Hardy, E. Young, A. Romanov, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters, 100, Issue 17 171917	Journal

492.		2012	“Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates” S. Choi, S. Bae, D. Lee, B. Kong, H. Cho, J. Song, B. Ahn, J. Keading, S. Nakamura, S. DenBaars, J. Speck	Japanese Journal of Applied Physics, 51, Issue 5 052101	Journal

493.		2012	“Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells” Y. Zhao, Q. Yan, C. Huang, S. Huang, P. Hsu, S. Tanaka, C. Pan, Y. Kawaguchi, K. Fujito, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura, D. Feezell,	Applied Physics Letters, 100, Issue 20 201108	Journal

494.		2012	“Trace analysis of non-basal plane misfit stress relaxation in (20(2)over-bar1) and (30(3)over-bar(1)over-bar) semipolar InGaN/GaN heterostructures” M. Hardy, P. Hsu, F. Wu, I. Koslow, E. Young, S. Nakamura, A. Romanov, S. DenBaars, J. Speck	Applied Physics Letters, 100, Issue 20 202103	Journal

495.		2012	“High-Power, Low-Efficiency-Droop Semipolar (20(2)over-bar(1)over-bar) Single-Quantum-Well Blue Light-Emitting Diodes” C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. Speck, S. Nakamura, S. DenBaars, D. Feezell	Applied Physics Express, 5, Issue 6 062103	Journal

496.		2012	“Influence of polarity on carrier transport in semipolar (20(21)over-bar) and (20(2)over-bar1) multiple-quantum-well light-emitting diodes” Y. Kawaguchi, C. Huang, Y. Wu, Q. Yan, C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. Van de Walle, S. DenBaars, S. Nakamura	Applied Physics Letters, 100, Issue 23 231110	Journal

497.		2012	“High-brightness polarized light-emitting diodes” E. Matioli, S. Brinkley, K. Kelchner, YL Hu, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch	Light: Science & Applications 1, E22	Journal

498.		2012	“Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers” C. Holder, J. Speck, S. DenBaars, S. Nakamura, D. Feezell	Applied Physics Express, 5, Issue 9 092104	Journal
499.		2012	“Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers” I. Koslow, M. Hardy, P. Hsu, P. Dang, F. Wu, A. Romanov, Y. Wu, E. Young, S. Nakamura, J. Speck, S. DenBaars	Applied Physics Letters, 101, Issue 12 121106	Journal

500.		2012	“Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20(2)over-bar1) InGaN/GaN heterostructures” M. Hardy, E. Young, P. Hsu, D. Haeger, I. Koslow, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters, 101, Issue 13 132102	Journal

501.		2012	“The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes” R. Chung, C. Han, C. Pan, N. Pfaff, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 101, Issue 13	Journal

502.		2012	“Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission” E. Young, F. Wu, A. Romanov, D. Haeger, S. Nakamura, S. DenBaars, D. Cohen, J. Speck	Applied Physics Letters, 101, Issue 14 142109	Journal

503.		2012	“Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20(2)over-bar(1)over) Blue Light-Emitting Diodes” C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. Speck, S. Nakamura, S. DenBaars	Applied Physics Express, 5, Issue 10 102103	Journal

504.		2012	“Thermoelectric properties of lattice matched InAIN on semi-insulating GaN templates” A. Sztein, J. Bowers, S. DenBaars, S. Nakamura	Journal of Applied Physics, 112, Issue 8 083716	Journal

505.		2012	“Suppression of relaxation in (20(2)over-bar1 InGaN/GaN laser diodes using limited area epitaxy” M. Hardy, S. Nakamura, J. Speck, S. DenBaars	Applied Physics Letters, 101, Issue 24 241112	Journal

506.		2013	“Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers” C. Holder, D. Feezell, J. Speck, S. DenBaars, S. Nakamura	Proceedings of SPIE 8639, 863906	Journal

507.		2013	“Development of High-Performance Nonpolar III-Nitride Light-Emitting Devices” RM Farell, EC Young, F Wu, S Nakamura, SP DenBaars, J Speck	SIECPC	Refereed Proceeding

508.		2013	“Gallium Nitride Based Light Emitting Diodes (LEDS) for Energy Efficient Lighting and Displays” SP DenBaars, S. Nakamura, J. Speck	SIECPC	Refereed Proceeding

509.		2013	“GaN-based VCSEL fabricated on Nonpolar GaN substrates” S. Nakamura	Conference on Lasers and Electro-Optics Pacific Rim	Refereed Proceeding

510.		2013	“Optical polarization characteristics of semipolar (30(3)over-bar1) and (30(3)over-bar(1)over-bar)” Y. Zhao, Q. Yan, D. Feezell, K. Fujito, C. Van de Walle, J. Speck, S. DenBaars, S. Nakamura	Optics Express, 21, Issue 1 A53-A59	Journal

511.		2013	“Development of gallium-nitride-based light-emitting diodes (LEDS) and laser diodes for energy-efficient lighting and displays” S. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C. Pan, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. Speck, S. Nakamura	Acta Materialia, 61, Issue 3 945-951	Journal

512.		2013	“Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates” R. Farrell, D. Haeger, K. Fujito, S. DenBaars, S. Nakamura, J. Speck	Journal of Applied Physics, 113, Issue 6 063504	Journal

513.		2013	“Suppressing void defects in long wavelength semipolar (20(21)over-bar) InGaN quantum wells by growth rate optimization” Y. Zhao, F. Wu, C. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Letters, 102, Issue 9 091905	Journal
514.		2013	“Optical properties of extended and localized states in m-plane InGaN quantum wells” S. Marcinkevicius, K. Kelchner, S. Nakamura, S. DenBaars, J. Speck	Applied Physics Letters, 102, Issue 10 101102	Journal

515.		2013	“Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane” S. Pimputkar, S. Kawabata, J. Speck, S. Nakamura	Journal of Crystal Growth, 368, 67-71	Journal

516.		2013	“Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light- Emitting Diodes for High-Efficiency Solid-State Lighting” D. Feezell, J. Speck, S. DenBaars, S. Nakamura	Journal of Display Tehcnology, 9, 190-198	Journal

517.		2013	“Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy” B. Bryant, A. Hirai, E. Young, S. Nakamura and J. Speck	Journal of Crystal Growth, 369, 14-20	Journal

518.		2013	“Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III-Nitride Light-Emitting Diodes” Y. Kawaguchi, S. Huang, R. Farrell, Y Zhao, J. Speck, S. DenBaars, S. Nakamura	Applied Physics Express, 6, Issue 5 052103	Journal

519.		2013	“Calculated thermoelectric properties of InxGa1-1xN, InxAl1-xN, and AlxGa1-xN” A. Sztein, J. Haberstroh, J. Bowers, S. DenBaars and S. Nakamura	Journal of Applied Physics, 113, Issue 18, 183707	Journal

520.		2013	“Green Semipolar (20(2)over-bar(1)over-bar) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth” Y. Zhao, S. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. Speck, S. DenBaars and S. Nakamura	Applied Physics Express, 6, Issue 6 062102	Journal
521.		2013	“Comparative Analysis of 20(2)over-bar1 and 20(2)over-bar(1)over-bar semipolar GaN light emitting diodes using atom probe tomography” R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. DenBaars, S. Nakamura and J. Speck	Applied Physics Letters, 102, Issue 25 251104	Journal

522.		2013	“Efficient and stable laser-driven white lighting” K. Denault, M. Cantore, S. Nakamura, S. DenBaars and R. Seshadri	AIP Advances, 3, Issue 7 072107	Journal

523.		2013	“Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors” A. Pesach, E. Gross, C. Huang, Y. Lin, A. Vardi, S. Schacham, S. Nakamura and G. Bahir	Applied Physics Letters, 103, Issue 2 022110	Journal

524.		2013	“Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells” S. Keller, R. Farrell, M. Iza, Y. Terao, N. Young, U. Mishra, S. Nakamura, S. DenBaars and J. Speck	Japanese Journal of Applied Physics, 52, Issue 8 UNSP 08JC10	Journal

525.		2013	“Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage” Y. Kawaguchi, CY Huang, YR Wu, YJ Zhao, S. DenBaars and S. Nakamura	Japanese Journal of Applied Physics, 52, Issue 8 UNSP 08JC08	Journal

526.		2013	“Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes” MT Hardy, CO Holder, DF Feezell, S. Nakamura, JS Speck, DA Cohen and SP DenBaars	Applied Physics Letters, 103, Issue 8 081103	Journal

527.		2013	“Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes” N. Pfaff, KM Kelchner, DF Feezell, S Nakamura, SP DenBaars and JS Speck	Applied Physics Express, 6, 092104	Journal

528.		2013	“Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells” S. Marcinkevicius, KM Kelchner, LY Kuritzky, S. Nakamura, SP DenBaars and JS Speck	Applied Physics Letters, 103 111107	Journal
529.		2013	“Near-field investigation of spatial variations of (20(2)over-bar(1)over-bar) InGaN quantum well emission spectra” S. Marcinkevicius, Y. Zhao, KM Kelchner, S. Nakamura, SP DenBaars and JS Speck	Applied Physics Letters, 103, 131116	Journal

530.		2013	“History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination” S. Nakamura and MR Krames	Proceedings of the IEEE, 101, 2211-2220	Journal

531.		2013	“Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20(2)over-bar(1) GaN substrates” A. Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, SP DenBaars and S. Nakamura	Applied Physics Letters, 103 151112	Journal

532.		2013	“Blue and aquamarine stress-relaxed semipolar (11(2)over-bar2) laser diodes” PS Hsu, F Wu, EC Young, AE Romanov, K. Fujito, SP DenBaars, JS Speck and S. Nakamura	Applied Physics Letters, 103 161117	Journal

533.		2013	“High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates” N. G. Young, R. M. Farrell, Y.L. Hu, T. Terao, M. Iza, S. Keller, S. P. DenBaars, S. Nakamura and J. S. Speck	Applied Physics Letters 103, 173903	Journal

534.		2013	“Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates” KM Kelchner, LY Kuritzky, K. Fujito, S. Nakamura, SP DenBaars and JS Speck	Journal of Crystal Growth, 382 80-86	Journal

535.		2013	“Comparison of Polished and Dry Etched Semipolar (11(2)over-bar2) III-Nitride Laser Facets” PS Hsu, RM Farrell, JJ Weaver, K Fujito, SP DenBaars, JS Speck and S. Nakamura	IEEE Photonics Technology Letters, 25, 2105-2107	Journal

536.		2013	“Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy” BN Bryant, EC Young, F. Wu, K. Fujito, S. Nakamura, and JS Speck	Applied Physics Express, 6 115502	Journal
537.		2013	“True green semipolar lnGaN-based laser diodes beyond critical thickness limits using limited area epitaxy” MT Hardy, F. Wu, PS Hsu, DA Haeeger, S. Nakamura, JS Speck, and SP DenBaars	Journal of Applied Physics, 114 183101	Journal

538.		2013	“Optimization of Annealing Process for Improved InGaN Solar Cell Performance” NC Das, ML Reed, AV Sampath, H. Shen, M. Wraback, Rm Farrell, M. Iza, SC Cruz, JR Lang, NG Young, Y. Terao, CJ Neufeld, S. Keller, S. Nakamura, SP DenBaars, UK Mishra, and JS Speck	Journal of Electronic Materials, 42,* 3467-3470*	Journal

539.		2013	“Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN” AM Armstrong, K. Kelchner, S. Nakamura, SP DenBaars, and JS Speck	Applied Physics Letters, 103* 232108*	Journal

	540.	2013	“Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells” RM Farrel, AA Al-Heji, CJ Neufeld, X. Chen, M Iza, SC Cruz, S. Keller, S. Nakamura, SP DenBaars, UK Mishra, and JS Speck	Applied Physics Letters, 103* 241104*	Journal

	541.	2014	“Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties” A. Sztein, JE Bowers, SP DenBaars, and S. Nakamura	Applied Physics Letters, 104* 042106*	Journal

	542.	2014	“Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) lnGaN single quantum wells” YJ Zhao, F. Wu, TJ Yang, YR Wu, S. Nakamura, and JS Speck	Applied Physics Express, 7 025503	Journal

	543.	2014	“Onset of plastic relaxation in semipolar (11(2)over-bar2) lnxGa1-xN/GaN heterostructures” IL Koslow, MT Hardy, PS Hsu, F. Wu, AE Romanov, EC Young, S. Nakamura, SP DenBaars, and JS Speck	Journal of Crystal Growth, 388, 48-53	Journal
	544.	2014	“Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers” I Koslow, C McTaggart, F Wu, S Nakamura, J. Speck, S DenBaars	Applied Physics Express 7, Issue 3 031003	Journal

	545.	2014	“Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well” S. Marcinkevicius, R Ivanov, Y. Zhao, S. Nakamura, Sp DenBaars, and JS Speck	Applied Physics Letters, 104* 111113*	Journal

	546.	2014	“Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN.GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes” Y. Ji, W Liu, T. Erdem, R. Chen, ST Tan, Z. Zhang, Z. Ju, X Zhang, H. Sun, X Sun, Y. Zhao, S. DenBaars, S. Nakamura and H. Demir	Applied Physics Letters 104* 143506*	Journal

	547.	2014	“Stacking faults and interface roughening in semipolar (2021) single InGaN quantum wells for long wavelength emission” F. Wu, Y. Zhao, A. Romanov, S. DenBaars, S. Nakamura and J. Speck	Applied Physics Letters 104* 151901*	Journal

	548.	2014	“High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration” N. G. Young, E. E. Perl, R. M. Farrell, M. Iza, J. E. Bowers, S. Nakamura, S. DenBaars and J. Speck	Applied Physics Letters 104* 163902*	Journal

Since Last Review

549.	2014	"High-power low-droop violet semipolar (3031)(3031) InGaN/GaN light-emitting diodes with thick active layer design" Daniel L. Becerra,Yuji Zhao,Sang Ho Oh, Christopher D. Pynn, Kenji Fujito, Steven P. DenBaars, and Shuji Nakamura	Appl. Phys. Lett. 105, 171106	Journal
550.	2014	"Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes" Matthew T. Hardy, Feng Wu, Chia-Yen Huang, Yuji Zhao, Daniel F. Feezell, Shuji Nakamura, James S. Speck, and Steven P. DenBaars	EEE PHOTONICS TECHNOLOGY LETTERS, 26, 43	Journal
551.	2015	"2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system" Changmin Lee, Chao Shen, Hassan M. Oubei, Michael Cantore, Bilal Janjua,Tien Khee Ng, Robert M. Farrell, Munir M. El-Desouki, James S. Speck, Shuji Nakamura, Boon S. Ooi, and Steven P. DenBaars	OPTICS EXPRESS 23, 29779	Journal

552.	2015	"4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication" Changmin Lee, Chong Zhang, Michael Cantore, Robert M. Farrell, Sang Ho Oh, Tal Margalith, James S. Speck, Shuji Nakamura, John E. Bowers, and Steven P. DenBaars	OPTICS EXPRESS 23, 16232	Journal
553.	2015	"Background Story of the Invention of Efficient Blue InGaN Light Emitting Diodes" Shuji Nakamura	International Journal of Modern Physics 29,* 1530016*	Journal
554.	2015	"Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes(Nobel Lecture) " Shuji Nakamura	Angew.Chem.Int.Ed, 54, 7770–7788	Journal
555.	2015	"Biography of Nobel laureate Shuji Nakamura" Shuji Nakamura	Ann. Phys. (Berlin)527, 350–357	Journal
556.	2015	"Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture" Ludovico Megalini, Daniel L. Becerra, Robert M. Farrell, A. Pourhashemi, James S. Speck, Shuji Nakamura, Steven P. DenBaars, and Daniel A. Cohen	Appl. Phys. Express 8 04270	Journal
557.	2015	"Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact" J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S.Nakamura	Appl. Phys. Lett.107, 091105	Journal
558.	2015	"Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN" Benjamin P Yonkee1, Robert M Farrell, John T Leonard,Steven P DenBaars, Jim S Speck and Shuji Nakamura	Semicond. Sci. Technol. 30 075007	Journal
559.	2015	"Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells" S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura	Appl. Phys. Lett. 107, 101104	Journal
560.	2015	"Energy savings by LED Lighting " S. Nakamura (Link not available)	Proc. of CLEO	RP
561.	2015	"Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals" S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, S. Nakamura	Journal of Crystal Growth 432 49–53	Journal
562.	2015	"Future Technologies and Applications of III-Nitride Materials and Devices" Shuji Nakamura	Engineering 2015, 1, 161	Journal
563.	2015	"High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier" Chih-Chien Pan, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh-Renn Wu, Chris Van de Walle, Shuji Nakamura and Steven P. DenBaars	ELECTRONICS LETTERS 51 1187–1189	Journal
564.	2015	"High spatial uniformity of photoluminescence spectra in semipolar plane (2021) InGaN/GaN quantum wells" K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck	Journal of Applied Physics 117, 023111	Journal
565.	2015	"High-power blue laser diodes with indium tin oxide cladding on semipolar (2021) GaN substrates" A. Pourhashemi, R. M.Farrell, A.Cohen, S. Speck, P. DenBaars and S. Nakamura	Appl. Phys. Lett. 106, 111105	Journal
566.	2015	"Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells" R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck	Appl. Phys. Lett. 107, 211109	Journal
567.	2015	"InGaN lattice constant engineering via growth on(In,Ga)N/GaN nanostripe arrays" Stacia Keller, Cory Lund, Tyler Whyland, Yanling Hu, Carl Neufeld, Silvia Chan, Steven Wienecke, Feng Wu, Shuji Nakamura, James S Speck, Steven P DenBaars and Umesh K Mishra	Semicond. Sci. Technol. 30 105020	Journal
568.	2015	"Low damage dry etch for III-nitride light emitters" Joseph G Nedy, Nathan G Young, Kathryn M Kelchner, Yanling Hu, Robert M Farrell, Shuji Nakamura, Steven P DenBaars, Claude Weisbuch and James S Speck	2015 Semicond. Sci. Technol. 30 085019	Journal
569.	2015	“Low Modulation Bias InGaN-based Integrated EA-Modulator-Laser on Semipolar GaN Substrate" Chao Shen, John Leonard, Arash Pourhashemi, Hassan Oubei, Mohd Sharizal Alias, Tien Khee Ng, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. Eldesouki and Boon S. Ooi	Book Series: IEEE Photonics Conference	RP
570.	2015	"Low-energy electro- and photo-emission spectroscopy of GaN materials and devices" Marco Piccardo, Justin Iveland, Lucio Martinelli, Shuji Nakamura, Joo Won Choi, James S. Speck, ClaudeWeisbuch, and Jacques Peretti	Journal of Applied Physics 117, 112814	Journal
571.	2015	"Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes" Shuji Nakamura	Rev. Mod. Phys., 87, 1139	Journal
572.	2015	"Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture" J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S.Nakamura	Appl. Phys. Lett. 107, 011102	Journal
573.	2015	"Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication" Yu-Chieh Chi, Dan-Hua Hsieh, Chung-Yu Lin, Hsiang-Yu Chen, Chia-Yen Huang, Jr-Hau He, Boon Ooi, Steven P. DenBaars, Shuji Nakamura, Hao-Chung Kuo & Gong-Ru Lin,	ScientificRepoRts 5 18690	Journal
574.	2015	"Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure" Saulius Marcinkevicˇius, Alexander Sztein, Shuji Nakamura and James S Speck	Semicond. Sci. Technol.30 115017	Journal
575.	2015	"Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions" Ludovico Megalini, Leah Y. Kuritzky, John T. Leonard, Renuka Shenoy, Kenneth Rose, Shuji Nakamura, James S. Speck, Daniel A. Cohen, and Steven P. DenBaars	Appl. Phys. Express 8 066502	Journal
576.	2015	"Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts" J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura	Journal of Applied Physics 118, 145304	Journal
577.	2015	"Spatial variations of optical properties of semipolar InGaN quantum wells" Saulius Marcinkevičius, Kristina Gelžinytė, Ruslan Ivanov, Yuji Zhao, Shuji Nakamura, Steven P. DenBaars, James S. Speck	Proc. of SPIE 9363* 93631U-1*	RP
578.	2015	"Stable vicinal step orientations in m-plane GaN" K.M. Kelchner, L.Y. Kuritzky, S. Nakamura, S.P. DenBaars, J.S. Speck	Journal of Crystal Growth 411,* 56*	Journal
579.	2015	"Thermally enhanced blue light-emitting diode" Jin Xue, Yuji Zhao, Sang-Ho Oh, William F. Herrington, James S. Speck, Steven P. DenBaars, Shuji Nakamura,and Rajeev J. Ram	Appl. Phys. Lett.107, 121109	Journal
580.	2015	"Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (2021) AlGaN/GaN buffer layers" E. C. Young, B.P. Yonkee, F. Wu, B.K. Saifaddin, D.A. Cohen, S. P. DenBaars, S. Nakamura, J.S. Speck	JOURNAL OF CRYSTAL GROWTH 425* , 389-392*	Journal
581.	2016	"A new system for sodiumflux growth of bulk GaN. Part I: System development" Paul Von Dollena, Siddha Pimputkar, Mohammed Abo Alreesh, Hamad Albrithen, Sami Suihkonen, Shuji Nakamura, James S. Speck	Journal of Crystal Growth 456* 58*	Journal
582.	2016	"A new system for sodium flux growth of bulk GaN. Part II:in situ investigation of growth processes" Paul Von Dollen, Siddha Pimputkar, Mohammed Abo Alreesh, Shuji Nakamura, James S. Speck	Journal of Crystal Growth 456,* 67*	Journal
583.	2016	"Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave" Thomas F. Malkowski, Siddha Pimputkar, James S. Speck, Steven P. DenBaars, Shuji Nakamura	Journal of Crystal Growth 456, 21	Journal
584.	2016	"Application of UV-C LED activated PMS for the degradation of anatoxin-a" Shilpi Verma, Shuji Nakamura, Mika Sillanpää	Chemical Engineering Journal 284* 122*	Journal
585.	2016	"Basic ammonothermal GaN growth in molybdenum capsules" S. Pimputkar, J. S. Speck, S. Nakamura	Journal of Crystal Growth 456* 15*	Journal
586.	2016	"Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN" L Y Kuritzky, D L Becerra, A Saud Abbas, J Nedy, S Nakamura,S P DenBaars and D A Cohen	Semicond. Sci. Technol.31 075008	Journal
587.	2016	"Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts" J . T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, F. Shen,T. Margalith,T. K. Ng, S. P. DenBaars, B. S. Ooi, J. S. Speck, and S. Nakamura	Proc. of SPIE 9748, 97481B	RP
588.	2016	"CW operation of high-power blue laser diodes with polished facets on semi-polar (2021) GaN substrates" A. Pourhashemi, R.M. Farrell, D.A. Cohen, D.L. Becerra, S.P. DenBaars and S. Nakamura	ELECTRONICS LETTERS 52 2003-2004	Journal
589.	2016	"Decomposition of supercritical ammonia and modeling of supercritical ammonia-nitrogen-hydrogen solutions with applicability towards ammonothermal conditions" Siddha Pimputkar Shuji Nakamura	The Journal of Supercritical Fluids 107, 17-30	Journal
590.	2016	"Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact" Benjamin P. Yonkee, Erin C. Young, Changmin Lee, John T. Leonard, Steven P. DenBaars, James S. Speck, and Shuji Nakamura	OPTICS EXPRESS 24, 7816	Journal
591.	2016	"Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white light emission" Stacy J. Kowsz; Christopher D. Pynn; Feng Wu; Robert M. Farrell; James S. Speck; Steven P. DenBaars; Shuji Nakamura	Proc. of SPIE 9748	RP
592.	2016	"Development of c-Plane Thin-Film Flip-Chip LEDs Fabricated by Photo-electrochemical (PEC) Liftoff"D. Hwang, B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck and S. P. DenBaars	Proc. of IPRM/ISCS	RP
593.	2016	"Dynamic characteristics of 410 nm semipolar III-nitride laser diodes with a modulation bandwidth of over 5 GHz" Changmin Lee, Chong Zhang, Daniel L. Becerra, Seunggeun Lee, Charles A. Forman, Sang Ho Oh, Robert M. Farrell, James S. Speck, Shuji Nakamura, John E. Bowers, and Steven P. DenBaars	Appl. Phys. Lett. 109,* 101104*	Journal
594.	2016	"Effects of active region design on gain and carrier injection and transport of CW semipolar InGaN laser diodes" Daniel L. Becerra, Daniel A. Cohen, Robert M. Farrell, Steven P. DenBaars, and Shuji Nakamura	Appl. Phys. Express 9 092104	Journal
595.	2016	"Enhancing Light Extraction from III-Nitride Devices Using Moth-Eye Nanostructures Formed by Colloidal Lithography"Christopher D. Pynn, Federico L. Gonzalez, Lesley Chan, Alexander Berry, Sang Ho Oh, Tal Margalith, Daniel E. Morse, Shuji Nakamura, Michael J. Gordon, Steven P. DenBaars (Link not available)	Proc. of IPRM/ISCS	RP
596.	2016	"Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture" Ludovico Megalini, Renuka Shenoy, Kenneth Rose, James P. Speck, J.ohn E. Bowers,Shuji Nakamura, Daniel A.. Cohen, and Steven P. DenBaars	Phys. Status Solidi A213, 953–957	Journal
597.	2016	"Flip-chip blue LEDs grown on (2021) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal" Benjamin P. Yonkee, Burhan SaifAddin, John T. Leonard, Steven P. DenBaars, and Shuji Nakamura	Appl. Phys. Express 9056502	Journal
598.	2016	"Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications" N.G. Young, R.M. Farrell, M. Iza, S. Nakamura, S.P. DenBaars, C. Weisbuch, J.S. Speck	Journal of Crystal Growth 455* 105–110*	Journal
599.	2016	"GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs" Shen, Chao; Leonard, John T.; Young, Erin C.; et al.	Proc. of CLEO	RP
600.	2016	"GHz Modulation Enabled Using Large Extinction Ratio Waveguide-Modulator Integrated with InGaN Laser Diode" Chao Shen,Changmin Lee,Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. Eldesouki and Boon S. Ooi	Japanese Journal of Applied Physics, 57, 08PA06	Journal
601.	2016	"Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy" C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars	Appl. Phys. Lett.109, 041107	Journal
602.	2016	"High Efficiency Semipolar III-Nitride Lasers for Solid State Lighting"D. L. Becerra, D. A. Cohen, R. M. Farrell, S. P. DenBaars and S. Nakamura	Proc. of ISLC	RP
603.	2016	"High Gain Semiconductor Optical Amplifier - Laser Diode at Visible" Chao Shen, Changmin Lee, Tien Khee Ng, Shuji Nakamura, James S. Speck, Steven P. DenBaars	Proc. of IEEE	RP
604.	2016	“High luminous efficacy green light-emitting diodes with AlGaN cap layer “Abdullah I. Alhassan, Robert M. Farrell, Burhan Saifaddin, Asad Mughal, Feng Wu, Steven P. DenBaars, Shuji Nakamura, and James S. Speck	OPTICS EXPRESS 24, 17868	Journal
605.	2016	"High luminous flux from single crystal phosphor-converted laser-based white lighting system" Michael Cantore, Nathan Pfaff, Robert M. Farrell, James S. Speck, Shuji Nakamura, and Steven P. DenBaars	OPTICS EXPRESS 24, A215	Journal
606.	2016	"High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication" Changmin Lee, Chong Zhang, Daniel Becerra, Seunggeun Lee, Sang Ho Oh, Robert M. Farrell, James S. Speck, Shuji Nakamura, John E. Bowers, and Steven P. DenBaars	2016 IEEE Photonics Conference (IPC). 809-810	RP
607.	2016	"High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications" Chao Shen, Tien Khee Ng, John T. Leonard, Arash Pourhashemi, Shuji Nakamura, Steven P. Denbaars, James S. Speck, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi	Optics Letters 41, 2608	Journal
608.	2016	"High-Modulation-Efficiency, Integrated Waveguide Modulator−Laser Diode at 448 nm" Chao Shen,Tien Khee Ng, John T. Leonard, Arash Pourhashemi, Hassan M. Oubei, Mohd S. Alias, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. Eldesouki, and Boon S. Ooi	ACS Photonics, 3, 262–268	Journal
609.	2016	"High-power LEDs using Ga-doped ZnO current-spreading layers" A.J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J.S. Speckand S.P. DenBaars	Electronics Letters 52, 304 – 306	Journal
610.	2016	"High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth" Chao Shen, Changmin Lee, Tien Khee Ng, Shuji Nakamura, James S. Speck, Steven P. Denbaars, Ahmed Y. Alyamani, Munir, M. El-Desouki, And Boon S. Ooi	OPTICS EXPRESS. 24, 20281	Journal
611.	2016	"High-Speed Performance of III-nitride 410nm Ridge Laser Diode on plance for (202̲1) Visible Light Communication" Lee, Changmin; Zhang, Chong; Becerra, Daniel L.; et al.	Proc. of IPRM/ISCS	RP
612.	2016	"Hybrid MOCVD/MBE GaN Tunnel Junction LEDs with Greater than 70% Wall Plug Efficiency" Yonkee, Benjamin P.; Young, Erin C.; Leonard, John T.; et al.	Proc. of IPRM/ISCS	RP
613.	2016	"Hybrid tunnel junction contacts to III–nitride light-emitting diodes" Erin C. Young, Benjamin P. Yonkee, Feng Wu, Sang Ho Oh, Steven P. DenBaars, Shuji Nakamura, and James S. Speck	Appl. Phys. Express 9 022102	Journal
614.	2016	"Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN" Sakari Sintonena, Pyry Kivisaari, Siddha Pimputkar, Sami Suihkonen, Tobias Schulz, James S. Speck, Shuji Nakamura	Journal of Crystal Growth 456, 43-50	Journal
615.	2016	"Infrared absorption of hydrogen-related defects in ammonothermal GaN" Suihkonen, Sami; Pimputkar, Siddha; Speck, James S.; Nakamura, Shuji	APPLIED PHYSICS LETTERS 108(20),	Journal
616.	2016	"Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion beam etched facets" Daniel L. Becerra, Leah Y. Kuritzky, Joseph Nedy, Arwa Saud Abbas, Arash Pourhashemi, Robert M. Farrell,Daniel A. Cohen, Steven P. DenBaars, James S. Speck, and Shuji Nakamura	Appl. Phys. Lett.108, 091106	Journal
617.	2016	"Measurement of Internal Loss, Injection Efficiency, and Gain for Continuous-wave (202̲1) Semipolar III-nitride Laser Diodes" Becerra, Daniel; Kuritzky, Leah; Nedy, Joseph; et al.	Proc. of IPRM/ISCS	RP
618.	2016	"Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting" Clayton Cozzan, Michael J. Brady, Nicholas O’Dea, Emily E. Levin, Shuji Nakamura, Steven P. DenBaars,and Ram Seshadri	AIP Advances 6, 105005	Journal
619.	2016	"Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers" Charles A. Forman, John T. Leonard, Erin C. Young, Seunggeun Lee, Daniel A. Cohen, Benjamin P. Yonkee, Robert M. Farrell, Tal Margalith, Steven P. DenBaars, James S. Speck, and Shuji Nakamura	2017 IEEE Photonics Conference (IPC)	RP
620.	2016	"Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture" J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura	Appl. Phys. Lett.108, 031111	Journal
621.	2016	"On the solubility of gallium nitride in supercritical ammonia–sodium solutions" Steven Griffiths, Siddha Pimputkar, James S. Speck, Shuji Nakamura	Journal of Crystal Growth 456* 5–14*	Journal
622.	2016	"Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates" David Hwang, Benjamin P. Yonkee, Burhan Saif Addin, Robert M. Farrell, Shuji Nakamura, James S. Speck, And Steven Denbaars	OPTICS EXPRESS 24,* 22875*	Journal
623.	2016	"Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes" N. G. Young, R. M. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S.Speck	Appl. Phys. Lett.108, 061105	Journal
624.	2016	"Polarization induced three-dimensional hole gas in compositionally graded InxGa1-xN layer "Yuuki Enatsu, Chirag Gupta, Matthew Laurent, Stacia Keller, Shuji Nakamura, and Umesh K. Mishra	Appl. Phys. Express 9 075502	Journal
625.	2016	"Properties of near-field photoluminescence in green emitting single and multiple semipolar (202̲1) plane InGaN/GaN quantum wells" Mounir D. Mensi,Daniel L. Becerra, Ruslan Ivanov, Saulius Marcinkevičius, Shuji Nakamura, Steven P. DenBaars, and James S. Speck	OPTICAL MATERIALS EXPRESS 6, 39	Journal
626.	2016	"Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ~1 W" Sang Ho Oh, Benjamin P. Yonkee, Michael Cantore, Robert M. Farrell,James S. Speck, Shuji Nakamura, and Steven P. DenBaars	Appl. Phys. Express 9 102102	Journal
627.	2016	"Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction" B. P. Yonkee, E. C. Young, S. P. DenBaars, S. Nakamura, and J. S. Speck	Appl. Phys. Lett. 109, 191104	Journal
628.	2016	"Stability of materials in supercritical ammonia solutions" Siddha Pimputkar,Thomas F. Malkowski, Steven Griffiths, Andrew Espenlaub, Sami Suihkonen, James S. Speck, Shuji Nakamura	J.ofSupercriticalFluids 110* 193–229*	Journal
629.	2016	"Study of Low-Efficiency Droop in Semipolar (2021)InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence" Houqiang Fu, Zhijian Lu, Xin-Hao Zhao, Yong-Hang Zhang, Fellow, IEEE, Steven P. DenBaars, Fellow, IEEE,Shuji Nakamura, and Yuji Zhao	JOURNAL OF DISPLAY TECHNOLOGY, 12, 736	Journal
630.	2016	"Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission" Kowsz, Stacy; Pynn, Christopher; Farrell, Robert; et al	Proc. of IPRM/ISCS	RP
631.	2016	"Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission" S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, S. P. DenBaars, and S. Nakamura	Journal of Applied Physics 120, 033102	Journal
632.	2017	"Blue Laser Diode Based Free-space Optical Data Transmission elevated to 18Gbps over 16m" Yu-Fang Huang, Yu-Chieh Chi, Hsuan-Yun Kao, Chen-Ting Tsai, Huai-Yung Wang, Hao-Chung Kuo, Shuji Nakamura, Ding-Wei Huang & Gong-Ru Lin	ScientificRepoRts 7: 10478	Journal
633.	2017	"Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates" Cory Lund, Karine Hestroffer, Nirupam Hatui, Shuji Nakamura,Steven P. DenBaars, Umesh K. Mishra, and Stacia Keller	Appl. Phys. Express 10 111001	Journal
634.	2017	"Efficient Semipolar (11−22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11−22) GaN/SapphireTemplates" Hongjian Li,Michel Khoury,Bastien Bonef, Abdullah I. Alhassan, Asad J. Mughal, Ezzah Azimah, Muhammad E.A. Samsudin, Philippe De Mierry, Shuji Nakamura, James S. Speck, and Steven P. DenBaars	ACS Appl. Mater. Interfaces 2017, 9, 36417-36422	Journal
635.	2017	"Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors" Changmin Lee, Chao Shen, Clayton Cozzan, Robert M. Farrell, James S. Speck, Shuji Nakamura, Boon S. Ooi, and Steven P. Denbaars	OPTICS EXPRESS 25, 17480	Journal
636.	2017	"Growth of high purity N-polar (In,Ga)Nfilms" Cory Lund, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller	Journal of Crystal Growth 464* 127–131*	Journal
637.	2017	“High wall-plug efficiency blue III-nitride LEDs designed for low current density operation" Leah Y. Kuritzky, Andrew C. Espenlaub, Benjamin P. Yonkee, Christopher D. Pynn, Steven P. Denbaars, Shuji Nakamura, Claude Weisbuch, and James S. Speck	OPTICS EXPRESS 25, 30696	Journal
638.	2017	"Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography" Bastien Bonef, Massimo Catalano, Cory Lund, Steven P. Denbaars, Shuji Nakamura, Umesh K. Mishra, Moon J.Kim, and Stacia Keller	Appl. Phys. Lett.110, 143101	Journal
639.	2017	"Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence" Tomas K. Uždavinys, Daniel L Becerra, Ruslan Ivanov, Steven P. Denbaars, Shuji Nakamura, James S. Speck, and Saulius Marcinkeviˇcius	OPTICAL MATERIALS EXPRESS 7, 93116	Journal
640.	2017	"Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes" Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, and Boon S. Ooi	2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)	RP
641.	2017	“Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices" Cory Lund, Brian Romanczyk, Massimo Catalano, Qingxiao Wang, Wenjun Li, Domenic DiGiovanni, Moon J.Kim, Patrick Fay, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, and StaciaKeller	Journal of Applied Physics 121, 185707	Journal
642.	2017	"Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency" Xuanqi Huang, Houqiang Fu, Hong Chen, Xiaodong Zhang, Zhijian Lu, Jossue Montes, Michael Iza, Steven P.DenBaars, Shuji Nakamura, and Yuji Zhao	Appl. Phys. Lett. 110, 161105	Journal
643.	2017	"Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers"Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; et al.	Proc. of IEEE-Photonics-Societ, 233-234	RP
644.	2017	"Optoelectronic properties of doped hydrothermal ZnO thin films" Asad J. Mughal, Benjamin Carberry, Sang Ho Oh, Anisa Myzaferi, James S. Speck, Shuji Nakamura,and Steven P. DenBaars	Phys. Status Solidi A214, 1600941	Journal
645.	2017	"P–n junction diodes with polarization induced p-type graded InxGa1–xN layer" Yuuki Enatsu, Chirag Gupta, Stacia Keller, Shuji Nakamura and Umesh K Mishra	Semicond. Sci. Technol. 32 105013	Journal
646.	2017	"Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes andInGaN LEDs" Asad J. Mughal, Erin C. Young, Abdullah I. Alhassan, Joonho Back, Shuji Nakamura, James S. Speck, and Steven P. DenBaars	Appl. Phys. Express 10 121006	Journal
647.	2017	"Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1-xN/GaN Quantum Wells" Ruslan Ivanov,Saulius Marcinkevičius, Mounir D. Mensi, Oscar Martinez, Leah Y. Kuritzky, Daniel J. Myers,Shuji Nakamura, and James S. Speck	PHYSICAL REVIEW APPLIED 7,064033	Journal
648.	2017	"Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells" Ruslan Ivanov, Saulius Marcinkevičius, Tomas K. Uždavinys, Leah Y. Kuritzky, Shuji Nakamura, and James S.Speck	Appl. Phys. Lett.110, 031109	Journal
649.	2017	"Semipolar (202¯1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect" C. Forman, J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith,S. DenBaars, J. Speck, S. Nakamura	Journal of Crystal Growth 464* 197–200*	Journal
650.	2017	"Semipolar III-nitride laser diodes with zinc oxide cladding [FM1] [SS2] "Anisa Myzaferi, Arthur H.Reading, Robert M.Farrell, Daniel A.Cohen, Shuji Nakamura, and Steven P.Denbaars	OPTICS EXPRESS 25 16922	Journal
651.	2017	"Semipolar III–nitride quantum well waveguidephotodetector integrated with laser diode for on-chip photonic system" Chao Shen, Changmin Lee, Edgars Stegenburgs, Jorge Holguin Lerma, Tien Khee Ng, Shuji Nakamura,Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi	Appl. Phys. Express 10 042201	Journal
652.	2017	"Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible lightcommunications" Chao Shen, Tien Khee Ng, Changmin Lee, John T. Leonard, Shuji Nakamura, et al.	Proc. SPIE10104, Gallium Nitride Materials and Devices XII, 101041U	RP
653.	2017	"Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser" Seung Geun Lee, Saadat Mishkat-Ul-Masabih, John T. Leonard, Daniel F. Feezell, Daniel A. Cohen, James S. Speck, Shuji Nakamura, and Steven P. DenBaars	Appl. Phys. Express 10 011001	Journal
654.	2017	"Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films" Asad J. Mughal, Benjamin Carberry, James S. Speck, Shuji Nakamura, and Steven P. Denbaars	Journal of ELECTRONIC MATERIALS, 46, 1821	Journal
655.	2017	"Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs" David Hwang, Asad Mughal, Christopher D. Pynn, Shuji Nakamura, and Steven P. DenBaars	Appl. Phys. Express 10 032101	Journal
656.	2017	"Techniques to reduce thermal resistance in flip-chip GaN-based VCSELs" Saadat Mishkat-Ul-Masabih, John Leonard, Daniel Cohen, Shuji Nakamura, and Daniel Feezell	Phys. Status Solidi A214, 8, 1600819	Journal
657.	2017	"Toward ultimate efficiency:progress and prospects on planar and 3D nanostructurednonpolar and semipolar InGaN light-emitting diodes" Yuji Zhao, Houqiang Fu, George T. Wang, and Shuji Nakamura	Advances in Optics and Photonics 10,* 246*	Journal
658.	2017	"Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells" Stacy J. Kowsz, Erin C. Young, Benjamin P. Yonkee,Christopher D. Pynn, Robert M. Farrell, James S. Speck,Steven P. Denbaars,And Shuji Nakamura	OPTICS EXPRESS 25, 3841	Journal
659.	2018	“An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures”Malkowski, Thomas F., Speck, James S., Denbaars, Steven P., Nakamura, Shuji	Journal of Crystal Growth 499, 85-89	Journal
660.	2018	"Auger-generated hot carrier current in photo-excited forward biased single quantumwell blue light emitting diodes" Andrew C. Espenlaub, Abdullah I. Alhassan, Shuji Nakamura, Claude Weisbuch, and James S. Speck	Appl. Phys. Lett.112, 141106	Journal
661.	2018	"Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes" Panpan Li, Bastien Bonef, Michel Khoury, Guillaume Lheureux,Hongjian Li, Junjie Kang, Shuji Nakamura, Steven P. DenBaars,	Superlattices and Microstructures 113* 684-689*	Journal
662.	2018	"Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact" Charles A. Forman, Seung Geun Lee, Erin C. Young, Jared A. Kearns, Daniel A. Cohen, John T. Leonard, Tal Margalith, Steven P. DenBaars, and Shuji Nakamura	Appl. Phys. Lett.112, 111106	Journal
663.	2018	"Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202̲1̲ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers" Shlomo Mehari, Daniel A.Cohen, Daniel L.Becerra, Shuji Nakamura, and Steven P. Denbaars	OPTICS EXPRESS 26, 1564	Journal
664.	2018	"Development of high performance green c-plane III-nitride light-emitting diodes" Abdullah. I. Alhassan, Nathan. G. Young, Robert. M. Farrell, Christopher Pynn, Feng. Wu, Ahmed Y. Alyamani, Shuji Nakamura, Steven. P. Denbaars, and James. S. Speck	OPTICS EXPRESS 26, 5591	Journal
665.	2018	“Digital processing with single electrons for arbitrary waveform generation of current” Okazaki, Yuma, Nakamura, Shuji, Onomitsu, Koji, Kaneko, Nobu-Hisa	Appl. Phys. Express 11, 3	Journal
666.	2018	"Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy" Mounir Mensi, Ruslan Ivanov, Tomas K. Uždavinys, Kathryn M. Kelchner, Shuji Nakamura, Steven P. DenBaars, James S. Speck, and Saulius Marcinkevičius	ACS Photonics2018, 5, 528-534	Journal
667.	2018	“Dynamical coupling between a nuclear spin ensemble and electromechanical phonons” Yuma Okazaki, Imran Mahboob, Koji Onomitsu, Satoshi Sasaki, Shuji Nakamura, Nobu-Hisa Kaneko & Hiroshi Yamaguchi	Nature Communications 9, 2993	Journal
668.	2018	" Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy" W. Hahn, M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche,Y.-R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, and J. Peretti	PHYSICAL REVIEW B 98, 045305	Journal
669.	2018	“Fano effect in the transport of an artificial molecule” Shota Norimoto, Shuji Nakamura, Yuma Okazaki, Tomonori Arakawa, Kenichi Asano, Koji Onomitsu, Kensuke Kobayashi, and Nobu-hisa Kaneko	Pyshical Review B, 97, 195313	Journal
670.	2018	"GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition" Seung Geun Lee, Charles A. Forman, Changmin Lee, Jared Kearns, Erin C. Young, John T. Leonard,Daniel A. Cohen, James S. Speck, Shuji Nakamura, and Steven P. DenBaars	Appl. Phys. Express, 11 062703	Journal
671.	2018	“High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition” Matthew S. Wong, David Hwang, Abdullah I. Alhassan, Changmin Lee, Ryan Ley, Shuji Nakamura, and Steven P. DenBaars	Optics Express, 26, 16	Journal
672.	2018	"High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum" Benjamin P. Yonkee, Erin C. Young, Steven P. DenBaars, James S. Speck and Shuji Nakamura	Semicond. Sci. Technol., 33 015015	Journal
673.	2018	"Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting" Daniel Feezell, Shuji Nakamura	C.R.Physique, 19 113–133	Journal
674.	2018	“Investigation of Mg delta-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD” Cory Lund, Anchal Agarwal, Brian Romanczyk, Thomas Mates, Shuji Nakamura, Steven P DenBaars, Umesh K Mishra and Stacia Keller	Semiconductor Science and Technolog 33, 9	Journal
675.	2018	"Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers" Humberto M. Foronda, Feng Wu, Christian Zollner, Muhammad Esmed Alif, Burhan Saifaddin, Abdullah Almogbel, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck	Journal of Crystal Growth, Vol. 483, pp. 134–139	Journal
676.	2018	"Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN" Cory Lund, Massimo Catalano, Luhua Wang, Christian Wurm, Thomas Mates, Moon Kim, Shuji Nakamura,Steven P. DenBaars, Umesh K. Mishra, and Stacia Keller	Journal of Applied Physics, Vol. 123, Article No. 055702	Journal
677.	2018	"Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition" David Hwang, Asad J. Mughal, Matthew S. Wong, Abdullah I. Alhassan,Shuji Nakamura, and Steven P. DenBaars	Appl. Phys. Express, Vol. 11, Article No. 012102	Journal
678.	2018	“Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells” Marcinkevicius, Saulius, Mensi, Mounir, Ivanov, Ruslan, Kuritzky, Leah Y., DenBaars, Steven P., Nakamura, Shuji, Speck, James S.	2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE	Proceedings Paper
679.	2018	"On the optical polarization properties of semipolar (2021) and (2021) InGaN/GaNquantum wells" Christian Mounir, Ingrid L. Koslow, Tim Wernicke, Michael Kneissl, Leah Y. Kuritzky, Nicholas L. Adamski, SangHo Oh, Christopher D. Pynn, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Ulrich T. Schwarz	Journal of Applied Physics, Vol. 123, Article No. 085705	Journal
680.	2018	“Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers” Mehari, Shlomo, Cohen, Daniel A., Becerrea, Daniel L., Weisbuch, Claude, Nakamura, Shuji, DenBaars, Steven P.	2018 76TH DEVICE RESEARCH CONFERENCE (DRC)	Proceedings Paper
681.	2018	"Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction" Abdullah I. Alhassan, Erin C. Young, Ahmed Y. Alyamani, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, and James S. Speck	Appl. Phys. Express, Vol. 11, Article No. 042101	Journal
682.	2018	"Semipolar (202̲1) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations" Michel Khoury, Hongjian Li, Bastien Bonef, Leah Y. Kuritzky, Asad J. Mughal,Shuji Nakamura, James S. Speck, and Steven P. DenBaars	Appl. Phys. Express, Vol. 11, Article No. 036501	Journal
683.	2018	“Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems”Lee, Changmin; Shen, Chao; Farrell, Robert M.; Nakamura,Shuji; Ooi, Boon S.; Bowers, John E.; DenBaars, Steven P.; Speck, James S.; Cozzan, Clayton; Alyamani, Ahmed Y.	GALLIUM NITRIDE MATERIALS AND DEVICES XIII	Proceedings Paper
684.	2018	"Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications" Chao Shen, Tien Khee Ng, Changmin Lee, Shuji Nakamura, James S. Speck, Steven P. Denbaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi	OPTICS EXPRESS, Vol. 26, Article No. A219	Journal
685.	2018	" Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting" Clayton Cozzan, Guillaume Lheureux, Nicholas O’Dea, Emily E. Levin, Jake Graser, Taylor D. Sparks, Shuji Nakamura, Steven P. DenBaars, Claude Weisbuch, and Ram Seshadri	ACS Appl. Mater. Interfaces2018, Vol. 10, pp. 5673-5681	Journal
686.	2018	“Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes” Zhao, Yuji, Fu, Houqiang, Wang, George T., Nakamura, Shuji	ADVANCES IN OPTICS AND PHOTONICS	Review
687.	2018	"Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes" Anisa Myzaferi, Asad J. Mughal, Daniel A. Cohen, Robert M. Farrell, Shuji Nakamura, James S. Speck, and Steven P. Denbaars	OPTICS EXPRESS, Vol. 26, Articlr No. 12490	Journal
688..	2019	“Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization” Becerra, Daniel L., Cohen, Daniel A., Mehari, Shlomo, DenBaars, Steven P., Nakamura, Shuji	Journal of Crystal Growth, Vol. 507, pp. 118–123	Journal

689.	2019	“Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating” Haojun Zhang, Daniel A. Cohen, Philip Chan, Matthew S. Wong, Shlomo Mehari, Daniel L. Becerra, Shuji Nakamura, and Steven P. Denbaars	Optics Letter, Vol. 44, pp. 3106-3019	Journal
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690.	2019	“Demonstration of blue semipolar (2021) GaN-based vertical-cavity surface-emitting lasers” Jared A. Kearns, Joonho Back, Daniel L. Cohen, Steven P. DenBaas, and Shuji Nakamura	Optics Express, Vol. 27, pp. 23707-23713	Journal

691.	2019	“Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts” SeungGeun Lee, Charles A. Forman, Jared Kearns, John T. Leonard, Shuji Nakamura, and Steven P. DenBaars	Optics Express, Vol. 27, pp. 31621-31628	Journal

692.	2019	“Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop” Daniel J. Myers, Kristina Gelžinyte, Abdullah I. Alhassan, Lucio Martinelli, Jacques Peretti, Shuji Nakamura, Claude Weisbuch, and James S. Speck	Physical Review B, Vol. 30 Article No. 125303	Journal

693.	2019	“Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes” Kareem W. Hamdy, Erin C. Young, Abdullah I. Alhassan, Daniel L. Becerra, Steven P. Denbaars, James S. Speck, and Shuji Nakamura	Optics Express, Vol. 27, pp. 8327-8334	Journal

694.	2019	“Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN” Ryan Anderson, Daniel L. Cohen, Shlomo Mehari, Shuji Nakamura, and Steven DenBaars	Applied Physics Express, Vol. 114, Article No. 151103	Journal

695.	2019	“Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical undercut etching” Arwa Saud Abbas, Ahmed Y. Alyamani, Shuji Nakamura, and Steven P. Denbaars	Applied Physics Express, Vol. 27, Article No. 036503	Journal

696.	2019	“Fabrication technology for high light- extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC” Burhan K SaifAddin, Abdullah Almogbel, Christian J Zollner, Humberto Foronda, Ahmed Alyamani, Abdulrahman Albadri, Michael Iza, Shuji Nakamura, Steven P DenBaars and James S Speck	Semiconductor Science and Technology, Vol. 34 Article No. 035007	Journal

697.	2019	“High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects” Xuanqi Huang, Wei Li, Houqiang Fu, Dongying Li, Chaomin Zhang, Hong Chen, Yi Fang, Kai Fu, Steven P. DenBaars, Shuji Nakamura, Stephen M. Goodnick, Cun-Zheng Ning, Shanhui Fan, and Yuji Zhao	ACS Phototonics, Vol. 6, pp. 2096-2103	Journal

698.	2019	“Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC” Burhan K. Saifaddin, Michael Iza, Humberto Foronda, Abdullah Almogbel, Christian J. Zollner, Feng Wu, Ahmed Alyamani, Abdulrahman Albadri, Shuji Nakamura, Steven P. Denbaars, and James S. Speck	Optics Express, Vol. 27, pp. A1074-A1083	Journal

699.	2019	“Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition” Caroline E. Reilly, Cory Lund, Shuji Nakamura, Umesh K. Mishra, Steven P. DenBaars , and Stacia Keller	Applied Physics Letters, Vol. 114, Article No. 151103	Journal

700.	2019	“Interwell carrier transport in InGaN/(In)GaN multiple quantum wells” Saulius Marcinkevičius , Rinat Yapparov , Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P. DenBaars, and James S. Speck	Applied Physics Letters, Vol. 114, Article No. 241103	Journal

701	2019	“Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal” Mohammed Abo Alreesh, Paul Von Dollen, Thomas F. Malkowskia, Tom Mates, Hamad Albrithen, Steven DenBaars, Shuji Nakamura, James S.Speck	Journal of Crystal Growth, Vol. 508, pp. 50–57	Journal

702.	2019	“Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors” Cory Lund, Shuji Nakamura, Steven P DenBaars, Umesh K Mishra, and Stacia Keller	Semiconductor Science and Technology, Vol. 34 Article No. 0725017	Journal

703.	2019	“Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate” Takeshi Kamikawa, Srinivas Gandrothula, Masahiro Araki, Hongjian Li, Valeria Bonito Oliva, Feng Wu, Daniel Cohen, Hames S. Speck, Steven P. DenBaars, and Shuji Nakamura	Optics Express, Vol. 27, pp. 24717-24723	Journal

704.	2019	“Semipolar III-nitride laser diodes for solid-state lighting” Shlomo Mehari, Daniel A. Cohen, Daniel L. Becerra, Haojun Zhang, Claude Weisbuch, James S. Speck, Shuji Nakamura, Steven P. DenBaars	SPIE Novel In-Plane Semiconductor XVII,,Book Series: Proceedings of SPIE, Volume: 10939	Conference Proceedings

705.	2019	“Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region” Mehari, Shlomo, Cohen, Daniel A., Becerra, Daniel L., Nakamura, Shuji, DenBaars, Steven P.	Japanese Journal of Applied Physics Vol. 58, 2	Journal

706.	2019	“Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template” Hongjian Li, Matthew S. Wong, Michael Khoury, Bastien Bonef, Haojun Zhang, YiChao Chow, PanPan Li, Jared Kearns, Aidan A. Taylor, Philippe de Mierry, Zainuriah Hassan, Shuji Nakamura, and Steven DenBaars	Optics Express, Vol. 27, pp. 24154-24160	Journal

“A semipolar (103) InGaN/GaN green light emitting diode”

R. Sharma, P. M. Pattison, T. Baker, B. Haskell, R. Farrell, H. Masui, F. Wu, S. DenBaars, J. Speck, S. Nakamura

“Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light emitting diodes on (10) GaN templates”

A. Chakraborty, T. Onuma, T. Baker, S. Keller, S. Chichibu, S. DenBaars, S. Nakamura, U. Mishra