Publications | Solid State Lighting & Energy Electronics Center

No.	Year	Authors and Title	Publisher	Category
1.	1989	S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy”	J. Cryst. Growth, Vol. 97, pp. 303-309	Journal

2.	1990	S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes”	Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697	Journal

3.	1991	S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth”	Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023	Journal

4.	1991	S. Nakamura “Analysis of real-time monitoring using interference effects”	Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353	Journal

5.	1991	S. Nakamura “In situ monitoring of GaN growth using interference effects”	Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628	Journal

6.	1991	S. Nakamura “GaN growth using GaN buffer layer”	Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707	Journal

7.	1991	S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers”	Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711	Journal

8.	1991	S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 30 No. 12A, pp. L1998-L2001	Journal

9.	1992	S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 2B, pp. L139-L142	Journal

10.	1992	S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 5A, pp. 1258-1266	Journal

11.	1992	S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers”	J. Appl. Phys., Vol. 71, No. 11, pp. 5543-5549	Journal

12.	1992	S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers”	Jpn. J. Appl. Phys., Vol. 31 No. 9A, pp. 2883-2888	Journal

13.	1992	S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 31 No. 10B, pp. L1457-L1459	Journal

14.	1993	S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 32 No. 1A/B. pp. L8-L11	Journal

15.	1993	S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 32 No. 1A/B, pp. L16-L19	Journal

16.	1993	S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films”	Jpn. J. Appl. Phys., Vol. 32 No. 3A, pp. L338-L341	Journal

17.	1993	S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes”	Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392	Journal

18.	1993	S. Nakamura “InGaN blue-light-emitting diodes”	Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915	Journal

19.	1993	S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films”	J. Appl. Phys., Vol. 74 No. 6, pp. 3911-3915	Journal

20.	1994	S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure”	No. 602, pp. 93-102

21.	1994	S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”	Appl. Phys. Lett., Vol. 64 No. 13, pp. 1687-1689	Journal

22	1994	S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display”	Nikkei Electronics Asia, June 1994	Magazine

23.	1994	S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes”	Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83	Conference Proceeding

24.	1994	S. Nakamura “Realized high bright blue laser-emitting diodes”	Scientific American, October 1994	Magazine

25.	1994	S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes”	Microelectronics Journal, Vol. 25, pp. 651-659	Journal

26.	1994	S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes”	J. Cryst. Growth, Vol. 145, pp. 911-917	Journal

27.	1994	S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs”	Mat. Res. Symp. Proc., Vol. 339, pp. 173-178	Journal

28.	1994	S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes”	J. Appl. Phys., Vol. 76, pp. 8189-8191	Journal

29.	1995	S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”	J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786	Journal

30.	1995	S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays”	IEEE, May 1995	Journal

31.	1995	S. Nakamura “InGaN/AlGaN blue-light-emitting diodes”	J. Vac. Sci. & Tech. A, Vol. 13 No. 3, pp. 705-710	Journal

32.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures”	Jpn. J. Appl. Phys., Vol. 34 No. 7A, pp. L797-L799	Journal

33.	1995	S. Nakamura “LED full color display”	IEICE, Vol. 78, No. 7, pp. 683-688	Journal

34.	1995	S. Nakamura “InGaN light-emitting diodes with quantum well structures”	Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP)	Conference Proceeding

35.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes”	Jpn. J. Appl. Phys., Vol. 34 No. 10B, pp. L1332-L1335	Journal

36.	1995	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’	Appl. Phys. Lett., Vol. 67 No. 13, pp. 1868-1870	Journal

37.	1995	S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED”	Optik, Vol. 24, No. 11, pp. 673-678	Journal

38.	1995	T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN”	J. Phys. Condens. Matter, Vol. 7 No. 10, pp. L129-L133	Journal

39.	1995	S. Nakamura “III-V Nitride light-emitting diodes”	OSA Proceedings on Advanced Solid-State Lasers, Vol. 24, pp. 20-24	Journal

40.	1995	W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes”	Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378	Journal

41.	1995	S. Nakamura “Recent developments of GaN based LEDs”	Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14	Conference Proceedings

42.	1996	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205	Conference Proceedings

43.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes”	Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76	Journal

44.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets”	Jpn. J. Appl. Phys., Vol. 35 No. 2B, pp. L217-L220	Journal

45.	1996	S. Nakamura “Pulsed operation of violet laser diodes”	Electr. Mater.,March issue, pp. 159-164	Journal

46.	1996	S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates”	Appl. Phys. Lett., Vol. 68 No. 15, pp. 2105-2107	Journal

47.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes”	Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271	Journal

48.	1996	S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers”	Appl. Phys. Lett., Vo. 68 No. 26, pp. 3766-3768	Journal

49.	1996	S. Nakamura “InGaN-based blue/green LEDs and laser diodes”	Adv. Mater., Vol. 8 No. 8, pp. 689-692	Journal

50.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K”	Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036	Journal

51.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes”	Appl. Phys. Lett., Vol. 69 No. 26, pp. 4056-4058	Journal

52.	1996	S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures”	Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190	Journal

53.	1996	S. Nakamura “Present status and future prospects of GaN-based light emitting devices”	Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685	Journal

54.	1996	T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN”	Physica B, Vol. 219-220, pp. 493-495	Journal

55.	1996	S. Nakamura “Fabrication of blue and green nitride light-emitting diodes”	Inst. Phys. Conf. Ser. No. 142, Chapter 6	Conference Proceeding

56.	1996	S. Nakamura “III-V nitride-based light-emitting diodes”	Diamond and Related Materials, Vol. 5 Issue 1-3, pp. 496-500	Journal

57.	1996	Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer”	Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416	Journal

58.	1996	K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers”	Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789	Journal

59.	1996	W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes”	Mat. Res. Soc. Symp. Proc. 395, pp. 673-678	Conference Proceedings

60.	1996	S. Nakamura “InGaN light-emitting diodes with quantum-well structures”	Mat. Res. Soc. Symp. Proc. 395, pp. 879-887	Conference Proceedings

61.	1996	S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes”	Proceedings of SPIE, Vol. 2693, pp. 43-56	Conference Proceedings

62.	1996	T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374	Conference Proceedings

63.	1996	S. Nakamura “First successful III-V nitride based laser diodes”	International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124	Conference Proceedings

64.	1996	S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes”	Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570	Journal

65.	1996	S. Nakamura “III-V nitride based blue/green LEDs and LDs”	23^rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18	Conference Proceedings

66.	1996	T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation”	23^rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544	Conference Proceedings

67.	1996