Compound Semiconductor Seminar - Tanmay Chavan
Compound Semiconductors: Electronics, Optoelectronics & Quantum Seminar
Thursday, January 22, 2025, 12:00PM
Attend in person at the Engineering Sciences Building 1001
Tanmay Chavan
Graduate Student Researcher, Electrical & Computer Engineering (Mishra Group)
Developing N-polar GaN HEMTs for high temperature applications
There is an ever-increasing demand for high-performance transistor technologies capable of reliable operation well beyond the 300°C Silicon limit, driven by extreme environment applications in aerospace, automative propulsion, geothermal sensing and deep-space exploration. Moreover, the tremendous energy requirement of AI infrastructure has further incentivized this development, creating a critical need for thermally robust and power-efficient transistors to enhance industrial power grids. Nitrogen-polar Gallium Nitride based high-electron-mobility transistors are promising candidates for such applications due to their wide bandgap and ability to hold high charge with high mobility. However, achieving high-temperature HEMT operation faces several challenges, major amongst these being gate stack integrity, and optimization of the epitaxial structure. This talk will focus on a comprehensive modeling, characterization, and fabrication co-design approach used to tackle these issues, resulting in the successful demonstration of HEMT operation at 800°C in air.
BIO: Tanmay Chavan is currently pursuing a Ph.D. in Electrical and Computer Engineering at UCSB. His research focuses on the modeling, fabrication, and characterization of N-polar Gallium Nitride high-eletron-mobility transistors. He joined the Mishra Group in Summer 2022.