Nitrides Seminar - Robert Hamwey

Nitrides Seminar

Tuesday, March 4, 2025, 12:00PM
Attend in person at ESB 1001!
Zoom option also available

Meeting ID: 851 5025 2488           Passcode: 278622

Robert Hamwey
Graduate Student Researcher, Mishra Group
University of California, Santa Barbara

High Charge N-Polar GaN HEMTs for RF applications

GaN-based high-electron-mobility transistors (HEMTs) have played an increasingly important role in high-power and high-frequency device applications as a result of their high output power, power density, and power-added efficiency at high frequencies. Traditionally, GaN HEMTs have been fabricated from heterostructures grown in the (0001) orientation (Ga-polar) with an AlGaN barrier layer. In recent years, innovations in (0001̅) oriented (N-polar) AlGaN/GaN HEMTs have led to record-breaking performance in power amplifiers operating at W-band. Despite this, AlGaN/GaN HEMTs demonstrate smaller two-dimensional electron gas (2DEG) densities compared to other III-nitride heterojunctions, which limits performance for scaled devices. As a result, alternative high-charge heterostructures have been investigated in Ga-polar and N-polar HEMTs. InAlGaN/GaN has emerged as a promising candidate in Ga-polar HEMTs. This talk will report on the fabrication, challenges, and results of the first N-polar InAlGaN HEMT with very low two-dimensional electron gas (2DEG) sheet resistance.

HOST: Dr. Yifan Yao