Figure 1: (a) Epitaxial structure for red InGaN LEDs; (b) SEM image of growth surface showing unfilled V-defects.
Monday, December 11, 2023, 12:00 am

UC Santa Barbara researchers are leaders in V-defects for improved red InGaN LED performance


University of California Santa Barbara in the USA has been exploring the potential for V-defects to improve the performance red/orange light-emitting diode (LED) devices with high-indium-content indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Jacob J. Ewing et al, Optics Express, v31, p41351, 2023].

The team reports 6.5% peak external quantum efficiency (EQE) for a device on patterned sapphire substrate (PSS), “which is one of the highest reported efficiencies in the academic literature for red/orange InGaN LEDs on PSS,” adding: “This result is important because PSS is widely used in the LED industry and represents a cost-effective, high-light-extraction substrate for mass production of InGaN LEDs.”


The author Mike Cooke is a freelance technology journalist who has worked in the semiconductor and advanced technology sectors since 1997.