UC Santa Barbara researchers are leaders in V-defects for improved red InGaN LED performance

University of California Santa Barbara in the USA has been exploring the potential for V-defects to improve the performance red/orange light-emitting diode (LED) devices with high-indium-content indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Jacob J. Ewing et al, Optics Express, v31, p41351, 2023].

The team reports 6.5% peak external quantum efficiency (EQE) for a device on patterned sapphire substrate (PSS), “which is one of the highest reported efficiencies in the academic literature for red/orange InGaN LEDs on PSS,” adding: “This result is important because PSS is widely used in the LED industry and represents a cost-effective, high-light-extraction substrate for mass production of InGaN LEDs.”

Visit: https://doi.org/10.1364/OE.503732

The author Mike Cooke is a freelance technology journalist who has worked in the semiconductor and advanced technology sectors since 1997.