Special Nitrides Seminar - Dr. Detlef Hommel, Wroclaw University, Dept. of Physics and Astronomy

Special Nitrides Seminar

Thursday, October 31, 2024, 12:00PM
Attend in person at ESB 1001!
Zoom option also available https://ucsb.zoom.us/j/87433943596?pwd=gtrVb8BSlLPfAThhvzJs51QpFr0rnb.1

Meeting ID: 874 3394 3596           Passcode: 121403

Nitrides diluted with other group-V elements and
hybrid structures to overcome material limitations

Dr. D. Detlef Hommel
Leopoldina Professorship
Wroclaw University, Dept. of Physics and Astronomy (Poland)

^{Abstract: In the last two decadesgroup-III nitrides opened new applications as well in optoelectronics andelectronic. Despite of all the breakthroughs there are still new challengesf.e. in efficient UV emitters connected f.e. with non-efficient doping of highAl-content compounds. The talk will concentrate on approaches to introduceother group-V elements into AlGaN  using as well MBE and MOVPE asepitaxial methods.} 

^{Under metal-rich growthconditions in MBE arsenic induces the formation of dodecagonal microrods whichcanges into the well hexagonal ones when closing the As supply. The stabilityof a- and m-sidewalls have been studied under water splitting conditions. Using MOVPE we were able to introduce up to 7% As into GaN keeping goodcrystalline structure. Results will be discussed based on XRD, XPS, UPS, TEMand AFM studies and compared to band-structure calculations. Finally, someresults of hybride structures (h-BN/GaN and MXene/GaN interfaces) will bediscussed.}

^{About Detlef Hommel:}

^{Epitaxy of wide-gap optoelectronic structures. Professorships at University of Bremen (Germany), Yamaguchi University and Chiba University (Japan) and Wroclaw University (Poland). Member of the Academia Europeae. At present lider of the Advanced Epitaxial Materials Group (EpiMat) at PORT (Polish Center for Technology Development).}